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1. 发明专利

JPH09246239A ETCHING OF METAL FILM 失效
公开(公告)号：JPH09246239A
公开(公告)日：1997-09-19
申请号：JP4496696
申请日：1996-03-01
申请人： SHIBAURA ENG WORKS LTD , TOSHIBA CORP
发明人： NONAKA MIKIO , MUTO MAKOTO , KASAI MASARU , ONODA TOSHIYASU , YOSHIMORI HIROAKI , HATTORI KEI , KOBAYASHI AKIRA
IPC分类号： H01L21/28 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To selectively leave only a tungsten film in a connecting hole without any narrow portion by etching a metal film other than the connecting hole using the gas mixing the gas including fluorine atoms, the gas including chlorine atoms and the oxygen gas as the reactive gas. SOLUTION: After forming a metal film 13 on a connecting hole formed to an interlayer insulation film 10 and the interlayer insulation film 10, a metal film 13 other than the connecting hole is removed by the etching. In the case of etching the metal film 13 in such a manner, the metal film other than the connecting hole is etched using the gas mixing the gas including fluorine atoms, the gas including chlorine gas and the oxygen gas as the reactive gas. For example, a titanium film 11 and a titanium nitride film 12 are formed on the connecting hole and thereafter a tungsten film 13 is formed by the DVD method. Next, a tungsten film 13 is etched in the discharge isolation type chemical dry etching apparatus using CF4 gas, O2 gas, Cl2 gas as the reactive gas.

2. 发明专利

JPH10284470A ETCHING APPARATUS 失效
公开(公告)号：JPH10284470A
公开(公告)日：1998-10-23
申请号：JP8658097
申请日：1997-04-04
申请人： SHIBAURA ENG WORKS LTD
发明人： FURUMITO NORISUKE , YOSHIMORI HIROAKI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain an optimum etching end point. SOLUTION: A photoelectric converter detects by a photoelectric converter signals of characteristic curve having an unstable region R1 after the etching start peculiar to the plasma discharge etching in an etching chamber, a stable region R2 , a descending region R3 and a flat region R4 , to obtain the transition point T2 from the stable region to the ascending region, and end terminal point T3 from the ascending region to the flat region of the signal, thereby determining the etching end time T4 based on the time difference between them.

3. 发明专利

JPH10163127A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10163127A
公开(公告)日：1998-06-19
申请号：JP32421896
申请日：1996-12-04
申请人： SHIBAURA ENG WORKS LTD
发明人： ONODA TOSHIYASU , MUTO MAKOTO , KASAI MASARU , YOSHIMORI HIROAKI
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To fully and quickly eliminate fluorine remaining on a barrier metal film surface and the like. SOLUTION: A tungsten film 15 at a region other than an electrode connection hole 12 is dry-etched and eliminated by a reaction gas containing fluorine atom. When the dry etching by the reaction gas containing the fluorine atom is completed, fluorine remains on the surface of the exposed titanium nitride film and the surface of the tungsten film 15 of the electrode connection hole 12. A semiconductor substrate 10 is heated to approximately 50 deg.C or higher in an atmosphere of a gas containing hydrogen such as steam. Thus, fluorine remaining on the semiconductor substrate 10 is bonded to hydrogen to be HF, and discharged from the semiconductor substrate.

4. 发明专利

JP2000150643A DRY ETCHING METHOD 失效
公开(公告)号：JP2000150643A
公开(公告)日：2000-05-30
申请号：JP31791498
申请日：1998-11-09
申请人： TOSHIBA CORP , SHIBAURA MECHATRONICS CORP
发明人： KOBAYASHI AKIRA , JINBO SADAYUKI , HATTORI KEI , YOSHIMORI HIROAKI , NONAKA MIKIO , MUTO MAKOTO , KASAI MASARU , ONODA TOSHIYASU
IPC分类号： H01L21/302 , C23F4/00 , H01L21/28 , H01L21/3065 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide an etching method for a metal film wherein a connection hole is formed at an inter-layer insulating film of a semiconductor substrate and a metal film comprising at least two layers is formed, and then a metal film other than the connection hole is removed by etching with no seam at the center of the connection hole widened. SOLUTION: An inter-layer insulating film of a semiconductor substrate 3 is etched in an etching chamber to form a connection hole while a metal film comprising at least two layers is formed in the connection hole and on the inter-layer insulating film, and then a metal film other than the connection hole is removed by etching. Here, a mixed gas fluorine atom and oxygen atom used as a reactive gas, a metal film other than a connection hole is etched with each layer substantially at the same etching speed at 150 deg.C or above or 150-250 deg.C of a semiconductor substrate. Thus, the metal film is packed in the connection hole to flatten its surface. The metal film may comprise a barrier metal layer and a tungsten film over it.

5. 发明专利

JP2013206971A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2013206971A
公开(公告)日：2013-10-07
申请号：JP2012071931
申请日：2012-03-27
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社 , Toshiba Corp , 株式会社東芝
发明人： MOTOKAWA KOJI , OIWA NORIHISA , DEMURA KENSUKE , YOSHIMORI HIROAKI , KARYU MAKOTO , KASE YOSHIHISA , TONO HIDESHI
IPC分类号： H01L21/3065 , C23C16/458 , C23C16/50 , H01L21/205 , H01L21/31 , H05H1/46
CPC分类号： H05H1/46 , H01J37/32623 , H01J37/32715 , H01J37/32724
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method which inhibit influences caused by a shape of a surface on which a processed product is placed.SOLUTION: A plasma processing apparatus according to one embodiment includes: a processing container; a decompression part decompressing the interior of the processing container to a predetermined pressure; a member having a control part which enters in a recessed part provided on a surface where a processed product is placed thereby controlling at least one of the in-plane distribution of the electrostatic capacitance of a region including the processed product and the in-plane distribution of a temperature of the processed product; a placement part provided in the processing container and where the member is placed on or fixed to an upper surface; a plasma generation part supplying electromagnetic energy to a region where plasma for performing plasma processing of the processed product is generated; and a gas supply part supplying a process gas to the region where the plasma is generated. The control part conducts control so as to uniformize at least one of the in-plane distribution of the electrostatic capacitance and the in-plane distribution of the temperature.
摘要翻译：要解决的问题：提供一种抑制由加工产品的表面形状引起的影响的等离子体处理装置和等离子体处理方法。解决方案：根据一个实施方案的等离子体处理装置包括：处理容器; 将处理容器的内部减压至预定压力的减压部件; 具有控制部件的部件，其进入设置在加工产品的表面上的凹部中，由此控制包括处理产品的区域的静电电容的面内分布和面内分布中的至少一个的加工产品的温度; 设置在所述处理容器中并且所述构件被放置在或固定到上表面上的放置部分; 向产生用于进行等离子体处理的等离子体的区域供给电磁能量的等离子体产生部; 以及向生成等离子体的区域供给处理气体的气体供给部。控制部进行控制，以使静电电容的面内分布和温度的面内分布中的至少一个均匀化。

6. 发明专利

JP2012129505A Method of manufacturing reflective mask, and apparatus of manufacturing reflective mask 有权
标题翻译：制造反光掩模的方法和制造反射掩模的装置
公开(公告)号：JP2012129505A
公开(公告)日：2012-07-05
申请号：JP2011242366
申请日：2011-11-04
申请人： Shibaura Mechatronics Corp , Toshiba Corp , 株式会社東芝 , 芝浦メカトロニクス株式会社
发明人： YOSHIMORI HIROAKI , KARYU MAKOTO , MOTOKAWA KOJI , TAKAI KOSUKE , KASE YOSHIHISA
IPC分类号： H01L21/027 , G03F1/22 , H01L21/3065
CPC分类号： G03F1/24 , G03B27/42 , G03F1/54 , G03F1/80
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a reflective mask and an apparatus of manufacturing a reflective mask which allow for improvement in productivity.SOLUTION: The method of manufacturing a reflective mask includes a step for forming a reflective layer on the main surface of a substrate, a step for forming an absorbing layer on the reflective layer, a step for forming a pattern region on the absorbing layer, and a step for forming a light-shielding region surrounding the pattern region on the absorbing layer and the reflective layer. In the step for forming a light-shielding region, the reflective layer is etched using a gas containing chlorine and oxygen.
摘要翻译：要解决的问题：提供一种制造反射掩模的方法和制造反射掩模的装置，其允许提高生产率。解决方案：制造反射掩模的方法包括在基板的主表面上形成反射层的步骤，在反射层上形成吸收层的步骤，在吸收层上形成图案区域的步骤以及用于形成围绕吸收层和反射层上的图案区域的遮光区域的步骤。在形成遮光区域的步骤中，使用含有氯和氧的气体来蚀刻反射层。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2014056895A Method of manufacturing reflective type mask, and apparatus of manufacturing reflective type mask 有权
标题翻译：制造反射型掩模的方法和制造反射型掩模的装置
公开(公告)号：JP2014056895A
公开(公告)日：2014-03-27
申请号：JP2012199842
申请日：2012-09-11
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社 , Toshiba Corp , 株式会社東芝
发明人： YOSHIMORI HIROAKI , KASE YOSHIHISA , KARYU MAKOTO , MOTOKAWA KOJI , OIWA NORIHISA
IPC分类号： H01L21/027 , G03F1/24 , G03F1/80
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus of manufacturing a reflective type mask, which can suppress generation of residue even when a capping layer contains ruthenium.SOLUTION: A method of manufacturing a reflective type mask having a reflective layer provided on a substrate, a capping layer which is provided on the reflective layer and contains ruthenium, an absorbing layer provided on the capping layer, and a pattern region provided on the absorbing layer, comprises a step of forming a light shielding region surrounding the pattern region on the absorbing layer, the capping layer and the reflective layer. In the step of forming the light shielding region, the capping layer is physically dry-etched by using inert gas, and the reflective layer is chemically dry-etched by using a mixed gas of chlorine and oxygen.
摘要翻译：要解决的问题：提供一种制造反射型掩模的方法和装置，其即使当覆盖层含有钌时也能抑制残留物的产生。溶液：制造具有反射层的反射型掩模的方法，反射层设置在衬底，设置在反射层上并包含钌的覆盖层，设置在覆盖层上的吸收层和设置在吸收层上的图案区域，包括在其上形成围绕图案区域的遮光区域的步骤吸收层，覆盖层和反射层。在形成遮光区域的步骤中，通过使用惰性气体物理地干蚀刻覆盖层，并且通过使用氯和氧的混合气体对反射层进行化学干蚀刻。

8. 发明专利

JP2001015492A ETCHING DEVICE AND ETCHING MONITORING METHOD 失效
公开(公告)号：JP2001015492A
公开(公告)日：2001-01-19
申请号：JP18642299
申请日：1999-06-30
申请人： SHIBAURA MECHATRONICS CORP , TOSHIBA CORP
发明人： JINBO SADAYUKI , YOSHIMORI HIROAKI , FURUMITO NORISUKE
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching device and its monitoring method that can minimize the loss of an extremely expensive semiconductor element by rapidly finding the film quality change in an object to be etched and the fluctuations of process parameters caused by the failure in the etching device. SOLUTION: This etching device is provided with an etching chamber for etching a wafer by active gas due to plasma discharge, a photoelectric converter for detecting an electromagnetic field that is generated by plasma discharge generated in the etching chamber, and a means for obtaining a characteristic curve signal that successively has unstable, stable, descent, and flat regions, after discharge is started from the output of the photoelectric converter. Monitoring is made, so that a characteristic curve obtained by etching lies within virtual curves A and B with a width of ±Z conforming to a normal etching characteristic curve S, and it is judged that the process parameters have fluctuated, the device has failed, and the quality of an object to be etched is changed, when the characteristic curve deviates from the virtual curve, thus rapidly detecting the failure.

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