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1. 发明专利

JPH05217957A REMOVAL OF ORGANIC COMPOUND FILM 失效
公开(公告)号：JPH05217957A
公开(公告)日：1993-08-27
申请号：JP19099392
申请日：1992-07-17
申请人： TOSHIBA CORP , SHIBAURA ENG WORKS LTD
发明人： JINBO SADAYUKI , MORI HARUKI , NONAKA MIKIO , KASAI MASARU
IPC分类号： H01L21/30 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a removal method of an organic compound film in which an organic compound film can be removed rapidly and surely without damaging a substrate to be treated. CONSTITUTION:In a removal method of an organic compound film which removes an organic compound film formed on a surface of a treatment substrate 11 by etching, the treatment substrate 11 is arranged in a reaction chamber 10. While the treatment substrate 11 is heated or cooled, active species containing halogen element and water vapor gas are introduced inside the chamber 10 and the organic compound film is partially etched. Then, a mixture gas of active species of hologen element and active species of oxygen element is introduced inside the chamber 10 and the remaining organic compound film is etched.

2. 发明专利

JPH05234957A 失效
公开(公告)号：JPH05234957A
公开(公告)日：1993-09-10
申请号：JP3206092
申请日：1992-02-19
申请人： TOSHIBA CORP
发明人： JINBO SADAYUKI , MORI HARUKI
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065
摘要： PURPOSE:To provide a semiconductor device manufacturing method containing a process for removing a carbon film without causing any damage to the layer underlying the carbon film. CONSTITUTION:The title method contains a process for depositing a metallic film 12 on a substrate 1, process for depositing a carbon film 13 on the film 12, process for forming a resist pattern 14 on the film 13 and etching the film 13 and film 12 to be worked by using the pattern 14 as a mask, and process for heating the film 13 to a temperature within a range from 100 deg.C or higher to 500 deg.C and, at the same time, removing the film 13 in a gas atmosphere containing an oxygen radical.

3. 发明专利

JPH065554A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH065554A
公开(公告)日：1994-01-14
申请号：JP18321892
申请日：1992-06-17
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： SHIMADA YUTAKA , KATO HISASHI , KAKIZAKI JUNICHI , AOKI KAZUJI , MORI HARUKI , SHIOTSUKI TATSUO
IPC分类号： H01L21/30 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable effective treatment when plasma treatment is performed for a treatment object such as a semiconductor wafer by radicals. CONSTITUTION:A reaction tube 1 of double structure consisting of an outer tube 1a and an inner tube 1b is used and a pair of plasma generating electrodes 5, 6 having an arc-shaped cross section through a center of the outer tube 1a are arranged along an outer peripheral surface of the outer tube 1a. An etch tunnel 7 is provided to enclose an outer periphery of the inner tube 1b and an injector 8 is installed at a central part of each of the electrodes 5, 6 in an outer side of the etch tunnel 7. A number of hole parts 7a of the etch tunnel 7 are formed in a length direction of the reaction tube 1 in two rows, for example in a region opposite to spaces between end parts of the electrodes 5, 6 (two positions). Furthermore, a number of gas flow-in holes T of the inner tube 1b are formed in a length direction of the reaction tube 1 in an opposite region of a group of the hole parts 7a.

4. 发明专利

JPH065552A GAS TREATMENT DEVICE 失效
公开(公告)号：JPH065552A
公开(公告)日：1994-01-14
申请号：JP18321692
申请日：1992-06-17
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： SHIMADA YUTAKA , KATO HISASHI , KAKIZAKI JUNICHI , AOKI KAZUJI , MORI HARUKI , SHIOTSUKI TATSUO
IPC分类号： H01L21/30 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To improve throughput by carrying out rapid heating and cooling when treating a semiconductor, for example, arranged inside a reaction tube with plasma while heating it. CONSTITUTION:A wafer beat 5 is placed to be loaded and unloaded and four rod-like heaters 71 to 74 wherein a resistance heat generation line 7a is contained inside a quartz tube 7b are spaced 90 deg. apart in circumferential direction of a reaction tube 1 to extend in a length direction of the reaction tube 1 inside the reaction tube of double structure provided with an etch tunnel 2. A heat generation part 7c is formed at up and down parts of opposite rod-like heaters 71, 73 and a heat generation part 7c is formed at down part of the rod-like heaters 72, 74 to make a temperature distribution uniform in a length direction of the reaction tube 1.

5. 发明专利

JPH0590153A METHOD AND APPARATUS FOR REMOVING ORGANIC COMPOUND FILM 失效
公开(公告)号：JPH0590153A
公开(公告)日：1993-04-09
申请号：JP24913591
申请日：1991-09-27
申请人： TOSHIBA CORP
发明人： JINBO SADAYUKI , MORI HARUKI
IPC分类号： G03F7/42 , H01L21/027
摘要： PURPOSE:To effectively remove an organic compound film at a high rate without damaging a sample by introducing a radical containing a halogen element and gas containing a hydrogen element into a reaction vessel through a double tube, and setting a ratio of flow velocities of both to a special value. CONSTITUTION:A radical containing a halogen element is supplied to a material 4 to be treated placed in a reaction chamber through a first tube 1 of a double tube. Gas containing a hydrogen element is supplied to the material 4 through a second tube 2. Here, a practical reaction rate is obtained in a range of 0.2

6. 发明专利

JPS63207128A METHOD FOR CIRCUIT PATTERN SUPERPOSITION TRANSFER OR LITHOGRAPHY 失效
公开(公告)号：JPS63207128A
公开(公告)日：1988-08-26
申请号：JP4094687
申请日：1987-02-24
申请人： TOSHIBA CORP
发明人： MORI HARUKI , TARUI ATSUSHI
IPC分类号： G03F9/00 , H01L21/027 , H01L21/30 , H01L21/68 , H05K3/00
摘要： PURPOSE:To superpose a second circuit pattern having a second mark for detecting a superposing position on a first circuit pattern having a first mark for detecting a superposing position to be transferred or subjected to a lithography in a less transferring state, by positioning the second circuit pattern on the first circuit pattern on the basis of the first mark to be transferred or subjected to lithography. CONSTITUTION:The positions of marks 11, 12 of a pattern 1M are detected by a superposing position detection deciding unit which belongs to a circuit pattern transferring or lithography device, the position is decided on the basis of the detected result, and a pattern 2M is transferred or subjected to a lithography onto the pattern 1M at the position. Accordingly, a first composite circuit pattern is obtained. Then, the positions of the marks are detected independently for two sets of marks, i.e., one set of marks 11, 12 and another set of marks 21, 22 by using the deciding unit. They are so positioned that the point O3 of a pattern 3M is disposed at the intermediate position between a point O1' and a point O2', and the pattern 3M is transferred or subjected to a lithography. Thus, a second composite circuit pattern is obtained.

7. 发明专利

JPH0869993A METHOD AND SYSTEM FOR ETCHING 失效
公开(公告)号：JPH0869993A
公开(公告)日：1996-03-12
申请号：JP20395694
申请日：1994-08-29
申请人： TOSHIBA CORP
发明人： MORI HARUKI , SHIMOMURA KOJI , YOSHIDA YUKIMASA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213
摘要： PURPOSE: To protect the mask characteristics against deterioration due to active gas intruding from the end part of a mask. CONSTITUTION: A reaction chamber 1 is provided with a port 1a for introducing an active gas and a port 1b for discharging the gas produced through reaction by means of an exhaust pump. A supporting base 2 is disposed in the reaction chamber 1 and a rod 4 for supporting a substrate 3 to be processed is disposed on the supporting base 2. A rod 6 for securing a mask p.late piece 5 having desired shape with a polysilicon film being deposited on the surface thereof is disposed above the supporting rod 4. The gas introduction port 1a is coupled with one end of a transportation pipe 7 having the other end coupled with a quartz discharge tube 8 covered with a microwave applicator 9. The microwave applicator 9 has a port 9a for introducing μ-wave from a μ-wave source and the quartz discharge tube 8 is provided, at the other end thereof, with a gas supply port 8a. This structure protect the mask characteristics from deteriorating due to active gas intruding from the end part of a mask.

8. 发明专利

JPH06333885A ETCHING METHOD 失效
公开(公告)号：JPH06333885A
公开(公告)日：1994-12-02
申请号：JP14556193
申请日：1993-05-25
申请人： TOSHIBA CORP
发明人： MORI HARUKI
IPC分类号： H01L21/30 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To lessen a base such as a polycrystalline silicon film in amount of etching by a method wherein mixed gas of oxygen and halogen is activated, an organic film is etched in a reaction region, and CO gas is fed so as to compensate the change of generated CO gas in concentration. CONSTITUTION:Mixed gas composed of O2, CF4, and N2 is fed to a gas activating region 24 from a gas nozzle 22, the mixed gas fed to the gas activating region 24 is activated by plasma and introduced into a reaction region 25 inside an inner tube 11 to etch an organic compound film 31 housed in the reaction region 25. Gas discharged from the reaction region 25 is checked by a gas monitor 21 to detect the change of CO in concentration with the progress of etching, and CO gas is fed from a gas nozzle 23 to the reaction region 25 so as to compensate the change of CO in concentration. By this setup, a polyerystalline silicon film as a base can be lessened in amount of etching.

9. 发明专利

JPH06204192A ETCHING METHOD FOR SILICON NITRIDE FILM 失效
公开(公告)号：JPH06204192A
公开(公告)日：1994-07-22
申请号：JP34932592
申请日：1992-12-28
申请人： TOSHIBA CORP
发明人： JINBO SADAYUKI , OIWA NORIHISA , MORI HARUKI
IPC分类号： H01L21/302 , H01L21/306
摘要： PURPOSE:To etch off a silicon nitride film from a silicon substrate or a silicon nitride film. CONSTITUTION:When etching off the silicon nitride film 12 made on a silicon nitride substrate 11, the silicon nitride film 12 is selectively etched off from the silicon substrate 11 by introducing the radical of mixed gas between CF4 and O2 being produced in the discharge tube in the area separate from a chamber, where the silicon substrate 11 is accommodated, and H2O.

10. 发明专利

JPH065553A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH065553A
公开(公告)日：1994-01-14
申请号：JP18321792
申请日：1992-06-17
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： SHIMADA YUTAKA , KATO HISASHI , KAKIZAKI JUNICHI , AOKI KAZUJI , MORI HARUKI , SHIOTSUKI TATSUO
IPC分类号： H01L21/30 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To restrain local electric field concentration when arranging a gas injector in a plasma generation region. CONSTITUTION:A reaction tube 1 of double structure which consists of an outer tube 1a and an inner tube 1b provided with a gas flow-in hole T is used and a pair of plasma generating electrodes 5, 6 are arranged in an outer peripheral surface of the outer tube 1a through a center of the outer tube 1a. A cross sectional contour of each of the electrodes 5, 6 are formed to an arc and both the electrodes 5, 6 are divided into two electrodes 5a, 5b and 6a, 6b, respectively with a space S therebetween from a center along circumferential direction of the outer tube 1a. An injector 8 wherein a number of gas injection holes are arranged in a length direction of the reaction tube 1 is provided at an opposite position of the space S between the outer tube 1a and the inner tube 1b.

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