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1. 发明专利

JP2009242900A Method of manufacturing oxide layer 审中-公开
标题翻译：制造氧化层的方法
公开(公告)号：JP2009242900A
公开(公告)日：2009-10-22
申请号：JP2008092685
申请日：2008-03-31
申请人： National Institute Of Advanced Industrial & Technology , Tdk Corp , Tdk株式会社 , 独立行政法人産業技術総合研究所
发明人： TSUCHIYA TETSUO , MIYAMOTO YUKI
IPC分类号： C23C18/12 , C23C26/00 , H01G4/33 , H01L21/316 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for an oxide layer containing Ba and TI in which a metal layer of Cu or the like is hardly oxidized, the crystallinity is excellent, and any crack is hardly generated.
SOLUTION: This manufacturing method includes an amorphous layer forming step of forming amorphous layers 20B, 20C of the oxide containing Ba and Ti on a metal layer 14, and a crystallizing step of crystallizing the amorphous layer 20C of the oxide containing Ba and Ti. In the amorphous layer forming step, the amorphous layers 20B, 20C of the oxide containing Ba and Ti of the thickness of 300-660 nm are formed by repeating once or a plurality of times the combination of forming a precursor layer of the oxide containing Ba and Ti with the application of the ultraviolet pulse laser beam of 1-100mJ/cm
2 per pulse to the precursor layer of the oxide containing Ba and Ti. Further, in the crystallizing step, the ultraviolet pulse laser beam of 60-400mJ/cm
2 per pulse is applied to the amorphous layer 20C of the oxide.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了提供一种含有Cu等的金属层几乎不被氧化的含有Ba和TI的氧化物层的制造方法，结晶度优异，几乎不产生裂纹。解决方案：该制造方法包括在金属层14上形成含有Ba和Ti的氧化物的非晶层20B，20C的非晶层形成步骤和使包含Ba的氧化物的非晶层20C结晶的结晶步骤钛在非晶层形成工序中，通过重复一次或多次形成包含Ba的氧化物的前体层的组合，形成厚度为300-660nm的包含Ba和Ti的氧化物的非晶层20B，20C 和Ti，每个脉冲施加1-100mJ / cm 2 SP / 2的紫外脉冲激光束到包含Ba和Ti的氧化物的前体层。此外，在结晶步骤中，对氧化物的非晶层20C施加每脉冲60-400mJ / cm 2 SP / 2的紫外脉冲激光束。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009242204A Method for producing perovskite-structure oxide 有权
标题翻译：生产氧化钇结构氧化物的方法
公开(公告)号：JP2009242204A
公开(公告)日：2009-10-22
申请号：JP2008093552
申请日：2008-03-31
申请人： National Institute Of Advanced Industrial & Technology , Tdk Corp , Tdk株式会社 , 独立行政法人産業技術総合研究所
发明人： TSUCHIYA TETSUO , MIYAMOTO YUKI , USUDA MASATO
IPC分类号： C01G23/00
CPC分类号： C01G23/006 , C01G23/002 , C01P2002/34 , C01P2002/72
摘要： PROBLEM TO BE SOLVED: To form a highly crystalline oxide layer on a base layer that is metal or the like.
SOLUTION: A method for producing a perovskite-structure oxide is provided comprising the steps of: forming, on a base layer 14, a buffer layer 16 having thermal conductivity lower than thermal conductivity of the base layer 14; forming a precursor layer 20A of an ABO
3 -type perovskite-structure oxide comprising Ba at A sites thereof and Ti at B sites thereof on the buffer layer 16; decomposing the precursor layer 20A of the oxide, thereby forming an oxide layer 20B comprising Ba and Ti; and annealing the oxide layer 20B by radiating laser light thereon.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在金属等的基底层上形成高度结晶的氧化物层。提供一种生产钙钛矿结构氧化物的方法，包括以下步骤：在基底层14上形成导热率低于基底层14的导热率的缓冲层16; 在其A位置形成包含Ba的ABO 3 SB-型钙钛矿结构氧化物的前体层20A和其B位的Ti在缓冲层16上; 分解氧化物的前体层20A，从而形成包含Ba和Ti的氧化物层20B; 以及通过在其上照射激光来退火氧化物层20B。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008028381A Method for manufacturing metal oxide film, laminated body and electronic device 有权
标题翻译：制造金属氧化膜，层压体和电子器件的方法
公开(公告)号：JP2008028381A
公开(公告)日：2008-02-07
申请号：JP2007161753
申请日：2007-06-19
申请人： National Institute Of Advanced Industrial & Technology , Tdk Corp , Tdk株式会社 , 独立行政法人産業技術総合研究所
发明人： MIYAMOTO YUKI , TSUCHIYA TETSUO
IPC分类号： H01G4/33 , C01G23/00 , C23C14/08 , C30B29/32 , H01G4/12 , H01L21/316 , H01L21/8246 , H01L27/105
CPC分类号： C23C18/1216 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/14
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a metal oxide film which can produce the metal oxide film with sufficiently high crystalline orientation easily, at low cost, and almost without damaging the base material and metal oxide film, as well as to provide a laminated body and an electronic device.
SOLUTION: The manufacturing method includes a step of forming a metal film 14 having a crystalline plane (111) on a base material 10, a step of forming a metal oxide film 20 on a crystalline plane (111) of the metal film 14, and a step of irradiating ultraviolet rays to the metal oxide film 20 while keeping the temperature of the metal oxide film 20 formed on the crystalline plane (111) of the metal film 14 within the range from 25 to 600°C.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造金属氧化物膜的方法，其可以容易地以低成本制造具有足够高的结晶取向的金属氧化物膜，并且几乎不损坏基材和金属氧化物膜以提供层叠体和电子装置。解决方案：制造方法包括在基材10上形成具有结晶面（111）的金属膜14的步骤，在金属膜的结晶面（111）上形成金属氧化物膜20的工序以及在将金属膜14的结晶面（111）上形成的金属氧化物膜20的温度保持在25〜600℃的范围内的同时向金属氧化物膜20照射紫外线的工序。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2009246242A Producing method of perovskite structure oxide 审中-公开
标题翻译：生产氧化钇结构氧化物的方法
公开(公告)号：JP2009246242A
公开(公告)日：2009-10-22
申请号：JP2008092949
申请日：2008-03-31
申请人： National Institute Of Advanced Industrial & Technology , Tdk Corp , Tdk株式会社 , 独立行政法人産業技術総合研究所
发明人： TSUCHIYA TETSUO , MIYAMOTO YUKI
IPC分类号： H01G4/33 , C04B35/46
摘要： PROBLEM TO BE SOLVED: To form a highly reliable perovskite structure oxide layer having higher orientation at the plane (111) without providing an intermediate layer between a metal layer and an oxide layer. SOLUTION: The producing method of an oxide layer includes the steps of forming, on a metal layer 14, a precursor layer 20A of the ABO 3 type perovskite structure oxide containing Ba in the A site and Ti in the B site, forming an oxide layer 20B by heating the precursor layer 20A of the oxide, radiating the laser beam to the oxide layer 20B under the conditions that the oxide is never crystallized, and crystallizing the layer irradiated with the laser beam through a heating process. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在不在金属层和氧化物层之间提供中间层的情况下，在平面（111）形成具有较高取向度的高度可靠的钙钛矿结构氧化物层。解决方案：氧化物层的制造方法包括在金属层14上形成在A位置含有Ba的ABO 3 SBO型钙钛矿结构氧化物的前体层20A的工序， Ti中，通过加热氧化物的前体层20A形成氧化物层20B，在氧化物从不结晶的条件下将激光束照射到氧化物层20B，并且通过激光束照射的层结晶化加热过程。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009252641A Method of producing superconducting oxide material 有权
标题翻译：生产超导氧化物材料的方法
公开(公告)号：JP2009252641A
公开(公告)日：2009-10-29
申请号：JP2008101536
申请日：2008-04-09
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： NAKAMURA TETSUSHIGE , SATO RYOSUKE , KOYANAGI KUNIHIKO , EBISAWA TAKASHI , OTSU HIDEHIKO , SOMA MITSUGI , TSUCHIYA TETSUO , KUMAGAI TOSHIYA , TSUKADA KENICHI
IPC分类号： H01B13/00 , C01G1/00 , C01G3/00 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a superconducting oxide material that achieves the same effect as that obtained by back irradiation even when forming a thinner film by overglazing without limiting laser irradiation conditions and even when forming films on both sides of a substrate.
SOLUTION: The method of producing an epitaxially grown superconducting coating material includes: a process (1) of applying a solution of metallic organic compound having an oxide for forming a superconducting material onto the substrate and drying it; a provisional firing process (2) of pyrolizing an organic matter in the metallic organic compound; and a full-scale firing process (3) of performing conversion into a superconducting material, wherein, when a laser is irradiated between the processes (1) and (2), a scattering mechanism is disposed immediately before a surface coated with the solution of metallic organic compound where the superconducting material is formed, and a laser, after being once scattered, is irradiated to the organic compound solution.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造超导氧化物材料的方法，即使在不限制激光照射条件的情况下甚至当在两侧形成膜时，通过过度玻璃形成较薄的膜也能获得与通过反向照射获得的效果相同的效果的基底。解决方案：制备外延生长的超导涂层材料的方法包括：将具有用于形成超导材料的氧化物的金属有机化合物溶液施加到基底上并干燥的方法（1）对金属有机化合物中的有机物进行热处理的暂时烧制工序（2）以及进行超导材料的转换的全尺寸焙烧工序（3），其中，当在工序（1）和（2）之间照射激光时，散射机构紧接在被涂覆有其中形成超导材料的金属有机化合物和被一次散射的激光照射到有机化合物溶液上。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009132932A Phosphor having crystallized metal oxide membrane 有权
标题翻译：具有结晶的金属氧化物膜的磷光体
公开(公告)号：JP2009132932A
公开(公告)日：2009-06-18
申请号：JP2008328292
申请日：2008-12-24
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： TSUCHIYA TETSUO , NAKAJIMA TOMOHIKO , WATANABE AKIO , KUMAGAI TOSHIYA
IPC分类号： C09K11/00 , C01F17/00 , C09K11/08 , C09K11/78 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a phosphor membrane material able to form a crystallized Y 2 O 3 -containing membrane on glass and silicone substrates and having high performance. SOLUTION: The method for producing the crystallized metal oxide membrane is to hold an organic metal membrane or a metal oxide membrane comprising at least one kind of rare earth metal element selected from a group consisting of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu at 250-600°C temperature and crystallize the same by irradiating ultraviolet light having ≤200 nm wavelength. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在玻璃和硅树脂基底上形成结晶的含有Y O 3 / SB> 3 结晶的荧光膜材料的方法，具有高性能。解决方案：生产结晶金属氧化物膜的方法是保持有机金属膜或金属氧化物膜，该有机金属膜或金属氧化物膜包含选自Y，Dy，Sm，Gd中的至少一种稀土金属元素， Ho，Eu，Tm，Tb，Er，Ce，Pr，Yb，La，Nd和Lu，并通过照射波长≤200nm的紫外光使其结晶。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008198396A Manufacturing method of superconductive oxide material 有权
标题翻译：超导氧化物材料的制造方法
公开(公告)号：JP2008198396A
公开(公告)日：2008-08-28
申请号：JP2007029775
申请日：2007-02-08
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： SOMA MITSUGI , TSUCHIYA TETSUO , KUMAGAI TOSHIYA , TSUKADA KENICHI , KOYANAGI KUNIHIKO , EBISAWA TAKASHI , OTSU HIDEHIKO
IPC分类号： H01B12/06 , C01G1/00 , C01G3/00 , H01B13/00
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1245 , C23C18/1295 , C23C18/14 , H01L39/2451
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a large-area superconductive material with improved performance, and efficient without causing ablation, in carrying out thermal decomposition of a metal organic compound and heat treatment formation of a superconductive substance.
SOLUTION: In the manufacturing method of the superconductive oxide material for manufacturing a superconductive coating material epitaxially grown through a process (1) of coating organic compound solution of metal whose oxide forms a superconductive substance on a support body and drying it, a temporary calcination process (2) thermally decomposing organic components in the metal organic compound, and a proper calcination process (3) carrying out conversion into the superconductive substance, laser light is irradiated between the process (1) and the process (2).
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了提供一种具有改进的性能，高效率而不引起烧蚀的大面积超导材料的制造方法，在进行金属有机化合物的热分解和热处理形成超导物质时。解决方案：在用于制造超导涂层材料的超导氧化物材料的制造方法中，通过将氧化物形成超导性物质的金属的有机化合物溶液涂覆在载体上并干燥而外延生长，临时煅烧方法（2）将金属有机化合物中的有机成分热分解，进行超导性物质的转化的适当的煅烧工序（3）在工序（1）和工序（2）之间照射激光。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008044803A Method for manufacturing thin film of crystallized metal oxide and its use 有权
标题翻译：制造结晶化金属氧化物薄膜及其使用的方法
公开(公告)号：JP2008044803A
公开(公告)日：2008-02-28
申请号：JP2006219834
申请日：2006-08-11
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： TSUCHIYA TETSUO , NAKAJIMA TOMOHIKO , WATANABE AKIO , KUMAGAI TOSHIYA
IPC分类号： C01F17/00 , C09K11/02 , C09K11/78 , H01G4/10 , H01L21/312 , H01L21/316
CPC分类号： H01G4/10 , C09K11/7787 , C23C18/14 , C30B23/06 , C30B25/105 , C30B29/16 , H01L39/2461
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film of a crystallized metal oxide, namely, a high-performance phosphor thin-film material, by which the thin film containing crystallized Y
2 O
3 can be deposited on a glass or silicon substrate.
SOLUTION: The method for manufacturing the thin film of the crystallized metal oxide comprises a step of crystallizing an organometallic thin film or metal oxide film, which is deposited on the substrate and contains at least one rare earth metal element selected from the group consisting of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu, while keeping the temperature of the organometallic thin film or metal oxide film at 250-600°C and while irradiating the organometallic thin film or metal oxide film with ultraviolet light having ≤200 nm wavelength.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造结晶化金属氧化物的薄膜的方法，即高性能荧光体薄膜材料，通过该方法，含有结晶化Y 2 O 3 可以沉积在玻璃或硅衬底上。结晶化金属氧化物的薄膜的制造方法包括将有机金属薄膜或金属氧化物膜析出的工序，该有机金属薄膜或金属氧化物膜沉积在基板上，并含有至少一种稀土金属元素，该稀土金属元素选自由Y，Dy，Sm，Gd，Ho，Eu，Tm，Tb，Er，Ce，Pr，Yb，La，Nd和Lu组成，同时保持有机金属薄膜或金属氧化物膜的温度为250-600° 同时用具有≤200nm波长的紫外线照射有机金属薄膜或金属氧化物膜。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007225532A Infrared sensor and manufacturing method therefor 有权
标题翻译：红外传感器及其制造方法
公开(公告)号：JP2007225532A
公开(公告)日：2007-09-06
申请号：JP2006049492
申请日：2006-02-27
申请人： National Institute Of Advanced Industrial & Technology , Nec Corp , 日本電気株式会社 , 独立行政法人産業技術総合研究所
发明人： TSUCHIYA TETSUO , MIZUTA SUSUMU , KUMAGAI TOSHIYA , SASAKI NARIHITO , KURASHINA HARUJI
IPC分类号： G01J1/02 , H01L37/00
CPC分类号： G01J5/20
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method suitable for mass production and having the effects of improving TCR in an infrared sensor, using vanadium oxide as a resistor for bolometer.
SOLUTION: The method of manufacturing an infrared sensor includes a process for forming a bridge structure 2 by an insulation material on an Si substrate 1; a process for forming a vanadium oxide thin film by a dry film forming method on the bridge structure; a process for changing the material, characteristics by irradiating the formed vanadium oxide thin film with a laser beam; a process for forming the vanadium oxide thin film 4 changing the material characteristics as the resistor 4' for the bolometer of a prescribed pattern; and a process for forming the resistor for the bolometer formed on the prescribed pattern and a protective layer 6 by the insulation material so as to cover the bridge structure.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供适合于批量生产并且具有改善红外传感器中的TCR的效果的制造方法，使用氧化钒作为测辐射热计的电阻器。解决方案：制造红外线传感器的方法包括通过Si衬底1上的绝缘材料形成桥结构2的工艺; 通过干式成膜法在桥结构上形成氧化钒薄膜的方法; 通过用激光束照射所形成的氧化钒薄膜来改变材料的特性的方法; 形成氧化钒薄膜4的方法，该方法改变作为规定图案的辐射热计的电阻器4'的材料特性; 以及通过绝缘材料形成用于形成在规定图案上的测辐射热板的电阻器和保护层6以覆盖桥结构的工艺。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2012174427A Method for manufacturing fuel cell 有权
标题翻译：制造燃料电池的方法
公开(公告)号：JP2012174427A
公开(公告)日：2012-09-10
申请号：JP2011033700
申请日：2011-02-18
申请人： Toyota Motor Corp , National Institute Of Advanced Industrial & Technology , トヨタ自動車株式会社 , 独立行政法人産業技術総合研究所
发明人： ITO NAOKI , TSUCHIYA TETSUO , NAKAJIMA TOMOHIKO , KUMAGAI TOSHIYA
IPC分类号： H01M4/88 , H01M4/86 , H01M8/02 , H01M8/12
CPC分类号： Y02P70/56
摘要： PROBLEM TO BE SOLVED: To provide a fuel cell manufacturing method capable of manufacturing an electrode with high activity.SOLUTION: A method for manufacturing a fuel cell (100) includes an application step for applying a liquid electrode precursor (40a) containing an organic metallic compound on a solid oxide type electrolyte layer (30), and a radiation step for radiating energy lights in an ultraviolet region to the electrode precursor (40a). The electrolyte layer (30) may be formed on an electrode (20) supported by a metallic support (10). The electrolyte layer (30) may be an oxygen ion conductive electrolyte, and the electrode precursor (40a) may be a precursor of a cathode.
摘要翻译：解决的问题：提供能够制造高活性的电极的燃料电池的制造方法。解决方案：一种用于制造燃料电池（100）的方法包括：施加步骤，用于将含有有机金属化合物的液体电极前体（40a）施加到固体氧化物型电解质层（30）上;辐射步骤，用于辐射在电极前体（40a）的紫外线区域的能量光。电解质层（30）可以形成在由金属支撑体（10）支撑的电极（20）上。电解质层（30）可以是氧离子导电电解质，电极前体（40a）可以是阴极的前体。版权所有（C）2012，JPO＆INPIT

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