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1. 发明专利

JP2009242204A Method for producing perovskite-structure oxide 有权
标题翻译：生产氧化钇结构氧化物的方法
公开(公告)号：JP2009242204A
公开(公告)日：2009-10-22
申请号：JP2008093552
申请日：2008-03-31
申请人： National Institute Of Advanced Industrial & Technology , Tdk Corp , Tdk株式会社 , 独立行政法人産業技術総合研究所
发明人： TSUCHIYA TETSUO , MIYAMOTO YUKI , USUDA MASATO
IPC分类号： C01G23/00
CPC分类号： C01G23/006 , C01G23/002 , C01P2002/34 , C01P2002/72
摘要： PROBLEM TO BE SOLVED: To form a highly crystalline oxide layer on a base layer that is metal or the like.
SOLUTION: A method for producing a perovskite-structure oxide is provided comprising the steps of: forming, on a base layer 14, a buffer layer 16 having thermal conductivity lower than thermal conductivity of the base layer 14; forming a precursor layer 20A of an ABO
3 -type perovskite-structure oxide comprising Ba at A sites thereof and Ti at B sites thereof on the buffer layer 16; decomposing the precursor layer 20A of the oxide, thereby forming an oxide layer 20B comprising Ba and Ti; and annealing the oxide layer 20B by radiating laser light thereon.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在金属等的基底层上形成高度结晶的氧化物层。提供一种生产钙钛矿结构氧化物的方法，包括以下步骤：在基底层14上形成导热率低于基底层14的导热率的缓冲层16; 在其A位置形成包含Ba的ABO 3 SB-型钙钛矿结构氧化物的前体层20A和其B位的Ti在缓冲层16上; 分解氧化物的前体层20A，从而形成包含Ba和Ti的氧化物层20B; 以及通过在其上照射激光来退火氧化物层20B。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2011214927A Infrared temperature sensor 有权
标题翻译：红外温度传感器
公开(公告)号：JP2011214927A
公开(公告)日：2011-10-27
申请号：JP2010081990
申请日：2010-03-31
申请人： Tdk Corp , Tdk株式会社
发明人： HIRABAYASHI JUN , USUDA MASATO , SHIBUE AKIRA , INUBUSHI KAZUMI , MATSUO YUTAKA
IPC分类号： G01J5/20 , G01J1/02 , G01J5/24
摘要： PROBLEM TO BE SOLVED: To propose an infrared temperature sensor superior in sensitivity characteristics and response stability.SOLUTION: The infrared temperature sensor 100 includes an infrared-sensing thermosensitive element 20 for detecting a calorific value of infrared rays radiated from a heat source; a temperature-compensating thermosensitive element 30 for detecting a calorific value from an external environment; and a substrate 11, having a first principal plane 11A and a second principal plane 11B which is the rear face of the former plane. The infrared-sensing thermosensitive element 20 and the temperature compensating thermosensitive element 30 are respectively disposed on thin-walled areas 14, 15 that are thinner than the thickest-walled area 16 of the substrate 11.
摘要翻译：要解决的问题：提出灵敏度特性和响应稳定性优异的红外温度传感器。解决方案：红外线温度传感器100包括用于检测从热源辐射的红外线的热值的红外感测热敏元件20。用于从外部环境检测发热量的温度补偿热敏元件30; 以及具有第一主面11A和作为前平面的背面的第二主面11B的基板11。红外感测热敏元件20和温度补偿热敏元件30分别设置在比衬底11的最厚壁区域16薄的薄壁区域14,15上。

3. 发明专利

JP2010192690A Method of manufacturing solar cell 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：JP2010192690A
公开(公告)日：2010-09-02
申请号：JP2009035602
申请日：2009-02-18
申请人： Tdk Corp , Tdk株式会社
发明人： AIDA YASUHIRO , USUDA MASATO
IPC分类号： H01L31/04
CPC分类号： H01L21/02568 , H01L21/02554 , H01L21/02557 , H01L21/02565 , H01L21/02631 , H01L31/02168 , H01L31/0322 , H01L31/0749 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a solar cell, increasing an open voltage, a short-circuiting current, and a fill factor F.F. owing to an increase in carrier density, and hence increasing the conversion efficiency. SOLUTION: The method of manufacturing a solar cell includes: a sputtering process for sputtering a target including a group Ib element and a target including a group IIIb element in an atmosphere including Se, and forming a layer including the group Ib element, group IIIb element, and Se on a substrate; and a heat-treatment process for heating the layer. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造太阳能电池的方法，提高开路电压，短路电流和填充因子F.F。由于载流子浓度的增加，因此提高了转换效率。解决方案：制造太阳能电池的方法包括：溅射工艺，用于在包括Se的气氛中溅射包括第Ib族元素和包含IIIb族元素的靶的靶，并且形成包含Ib族元素的层， IIIb族元素和Se在基底上; 以及加热该层的热处理工艺。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2004356065A El element 审中-公开
公开(公告)号：JP2004356065A
公开(公告)日：2004-12-16
申请号：JP2003155613
申请日：2003-05-30
申请人： Tdk Corp , Tdk株式会社
发明人： YAMAOKA HIDEHIKO , NISHIKAWA TOMONAGA , OHASHI YOSHIHIKO , USUDA MASATO
IPC分类号： H05B33/22 , H05B33/12 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide an EL element for sufficiently preventing leakage of light among pixels and luminous unevenness at pixel end part which can be simply manufactured by omitting manufacturing process.
SOLUTION: An EL element 1 has a luminous layer 40 disposed between electrodes 4 and 20 provided on a substrate 2 on which a lower electrode 4 is formed so as to be held between insulation layers 8 and 48. The luminous layer 40 is composed of a first and a second phosphor layers 42 and 44. The upper insulation layer 48 is composed of a first insulation part 48a arranged on a first phosphor layer 42 and a second insulation part 48b formed so as to cover a second phosphor layer 44, and the first insulation part 48a and the second insulation part 48b are arranged so as to overlap with each other at an area R between the pixels.
COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2003347062A Manufacturing method for el element and el element 审中-公开
标题翻译： EL元件和EL元件的制造方法
公开(公告)号：JP2003347062A
公开(公告)日：2003-12-05
申请号：JP2002151043
申请日：2002-05-24
申请人： Tdk Corp , Tdk株式会社
发明人： SAIDA YOSHIO , SHIRAKAWA YUKIHIKO , USUDA MASATO , NAKANO MUTSUKO
IPC分类号： H01L51/50 , H05B33/10 , H05B33/22
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for an EL element having high manufacturing stability and no EL light emission unevenness when driving the element and the EL element, in the EL element securing surface flatness of a thick film ceramics dielectric layer by a sol-gel dielectric layer. SOLUTION: In this manufacturing method for the EL element, a substrate 1 having electric insulation, a first electrode layer 2 having a pattern on the substrate 1, dielectric layer 4 and 5 coating at least part of the electrode layer 2, and at least a light emitting layer 7 and a second electrode layer 9 on the dielectric layers 4 and 5 are sequentially laminated, and the dielectric layer 4 has a multilayered structure of a first dielectric layer 4 of a thick film and a second dielectric layer 5 formed by a solution coating and baking method. A buffer layer 3 is arranged between the substrate 1 formed with the electrode layer 2 and the first dielectric layer 4. Subsequently, the manufacturing method for the EL element constituted to bake the first dielectric layer 4 is obtained, and the EL element is obtained by this method. COPYRIGHT: (C)2004,JPO
摘要翻译：解决方案：为了提供一种在驱动元件和EL元件时具有高制造稳定性和不发光EL发光不均匀性的EL元件的制造方法，在EL元件固定面平坦度的厚膜陶瓷介电层通过溶胶 - 凝胶电介质层。解决方案：在这种EL元件的制造方法中，具有电绝缘性的基板1，在基板1上具有图案的第一电极层2，电介质层4和5涂覆至少一部分电极层2，以及电介质层4和5上的至少一个发光层7和第二电极层9依次层叠，并且介电层4具有形成为厚膜的第一电介质层4和形成的第二电介质层5的多层结构通过溶液涂布和烘烤方法。在形成有电极层2的基板1和第一电介质层4之间配置缓冲层3.随后，获得构成为烘烤第一电介质层4的EL元件的制造方法，EL元件由这种方法。版权所有（C）2004，JPO

6. 发明专利

JP2012119389A Thermistor, temperature sensor and gas sensor 有权
标题翻译：热敏电阻，温度传感器和气体传感器
公开(公告)号：JP2012119389A
公开(公告)日：2012-06-21
申请号：JP2010265498
申请日：2010-11-29
申请人： Tdk Corp , Tdk株式会社
发明人： MATSUO YUTAKA , HIRABAYASHI JUN , USUDA MASATO
IPC分类号： H01C7/04
摘要： PROBLEM TO BE SOLVED: To provide a thermistor that improves product reliability by increasing the mechanical strength of the thermistor and preventing warping of the thermistor.SOLUTION: A thin film thermistor 1 includes a substrate 2 and a thermistor film 5 disposed on the substrate 2. The substrate 2 has a thin portion TH1 thinner than a maximum thickness ΔT3 of the substrate 2, and the thermistor film 5 is provided with a recessed portion 52 or provided with a bored portion 52 by local removal of the thermistor film 5. This increases elemental strength of the thin film thermistor 1 and prevents warping of the thin film thermistor 1 due to film stress.
摘要翻译：要解决的问题：提供一种通过增加热敏电阻的机械强度并防止热敏电阻翘曲来提高产品可靠性的热敏电阻。解决方案：薄膜热敏电阻1包括设置在基板2上的基板2和热敏电阻膜5.基板2具有比基板2的最大厚度ΔT3薄的薄部分TH1，并且热敏电阻膜5是设置有凹部52或通过局部去除热敏电阻膜5而设置有钻孔部分52.这增加了薄膜热敏电阻1的元素强度，并且防止薄膜热敏电阻1由于膜应力引起的翘曲。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2009168622A Method for measuring concentration of metabolite and electrochemical sensor used for same 有权
标题翻译：用于测量代谢物和用于其的电化学传感器浓度的方法
公开(公告)号：JP2009168622A
公开(公告)日：2009-07-30
申请号：JP2008007134
申请日：2008-01-16
申请人： Tdk Corp , Tdk株式会社
发明人： SAKAMOTO TAKESHI , SHIBUE AKIRA , TSUYOSHI ATSUHIRO , MATSUBA YASUHIRO , ARAI MICHIO , UCHIDA SHINYA , USUDA MASATO , KITAHARA YOSHIMI
IPC分类号： G01N27/416 , G01N27/30 , G01N27/327
摘要： PROBLEM TO BE SOLVED: To highly accurately and noninvasively measure the concentration of metabolites of an effusion outside the body while reducing stimuli to the skin. SOLUTION: A method for measuring the concentration of metabolites of an effusion outside the body includes both a step for applying a pulsed current or a D.C. current of a 0.1-10 μAcm -2 to extract an effusion outside the body with a working electrode of an electrochemical sensor having an electrically conductive DLC film or an electrically conductive diamond film in contact with the skin and bringing an extracted effusion outside the body into contact with the working electrode and a step for measuring the concentration of metabolites of the effusion outside the body in contact with the working electrode by the electrochemical sensor. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：高精度和非侵入性地测量身体外部渗出物的代谢物浓度，同时减少对皮肤的刺激。解决方案：用于测量身体外部渗出物的代谢物浓度的方法包括施加脉冲电流的步骤或0.1-10μAcm -2 的DC电流以提取身体外部具有电化学传感器的工作电极，其具有与皮肤接触的导电DLC膜或导电金刚石膜，并且使得在身体外的提取的渗出物与工作电极接触，并且测量浓度的步骤通过电化学传感器与身体的工作电极接触的体外代谢物的代谢物。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2004356061A El element 有权
公开(公告)号：JP2004356061A
公开(公告)日：2004-12-16
申请号：JP2003155510
申请日：2003-05-30
申请人： Tdk Corp , Tdk株式会社
发明人： YAMAOKA HIDEHIKO , HIRABAYASHI JUN , OHASHI YOSHIHIKO , USUDA MASATO
IPC分类号： H05B33/14 , H05B33/12
摘要： PROBLEM TO BE SOLVED: To provide an EL element for sufficiently preventing leakage of light among pixels and luminous unevenness at pixel end part while simply manufacturing by omitting manufacturing process.
SOLUTION: An EL element 1 has a luminous layer 30 disposed between electrodes 4 and 20 provided on a substrate 2 on which a lower electrode 4 is formed so as to be held between insulating layers 8 and 38. The luminous layer 30 is composed of a first and a second phosphor layers 32 and 34 disposed in a sate that the end parts thereof are overlapped each other in an area R which is a space between the electrodes.
COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2011095161A Collection implement, detection device, and collection method 有权
标题翻译：收集执行，检测装置和收集方法
公开(公告)号：JP2011095161A
公开(公告)日：2011-05-12
申请号：JP2009250809
申请日：2009-10-30
申请人： Tdk Corp , Tdk株式会社
发明人： ONO SHIZUKO , USUDA MASATO
IPC分类号： G01N1/10 , G01N33/50
摘要： PROBLEM TO BE SOLVED: To provide a collection implement or collection method, capable of quickly detecting an analysis target even when the concentration of the analysis target is low, and to provide a measuring instrument using the same.
SOLUTION: The collection implement 100 includes a support plate 12, the porous member 23 supported on the support plate 12, and an inspection target solution supply part 20 for supplying an inspection target solution to the porous member 23. An opening 12a is formed in the support plate 12 at the position opposed to the porous member 23.
COPYRIGHT: (C)2011,JPO&INPIT

10. 发明专利

JP2010192689A Solar cell, and method of manufacturing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：JP2010192689A
公开(公告)日：2010-09-02
申请号：JP2009035594
申请日：2009-02-18
申请人： Tdk Corp , Tdk株式会社
发明人： AIDA YASUHIRO , USUDA MASATO
IPC分类号： H01L31/04
CPC分类号： H01L31/18 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a solar cell increasing an open voltage, a short-circuiting current, and a fill factor F.F., and hence increasing conversion efficiency. SOLUTION: The solar cell is equipped with: a p-type semiconductor layer; and an n-type semiconductor layer, formed on the p-type semiconductor layer, and including a compound expressed by a chemical formula ZnO 1-x-y S x Se y (1), where x≥0, y>0, and 0.2 COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供增加开路电压，短路电流和填充因子F.F的太阳能电池，从而提高转换效率。
解决方案：太阳能电池配备有：p型半导体层; 和形成在p型半导体层上的n型半导体层，并且包含由化学式ZnO表示的化合物.S Se （1），其中x≥0，y> 0和0.2

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