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    • 2. 发明专利
    • Method for manufacturing oxide superconductor
    • 制造氧化物超导体的方法
    • JP2014047100A
    • 2014-03-17
    • JP2012190763
    • 2012-08-31
    • Toshiba Corp株式会社東芝
    • ARAKI TAKESHIHAYASHI MARIKOFUKUYA HIROYUKI
    • C01G1/00C01G3/00H01B12/06H01B13/00H01L39/24
    • H01L39/24H01L39/2425
    • PROBLEM TO BE SOLVED: To provide a method for manufacturing an oxide superconductor, capable of stably increasing film thickness.SOLUTION: The method for manufacturing an oxide superconductor comprises: dissolving fluoro carboxylate including trifluoroacetic acid salt obtained by mixing metal including yttrium and lanthanoids (where, cerium, praseodymium, promethium and ruthenium are excluded), barium and copper; preparing a coating solution using alcohol including methanol as a solvent; adding CFH-(CF)-COOH or HOCO-(CF)-COOH (n and m are positive integers) as a crack preventive to the coating solution; forming a gel film on a substrate using the coating solution having the added crack preventive; calcining the gel film so that the total time of a process under an oxygen partial pressure of 3% or less at a temperature of 200°C or more is 7 hours or less to form a calcination film; and sintering and oxygen-annealing the calcination film to form an oxide superconductor film.
    • 要解决的问题:提供能够稳定增加膜厚度的氧化物超导体的制造方法。解决方案:氧化物超导体的制造方法包括:将包含三氯乙酸盐的氟羧酸盐溶解在包含钇和镧系元素的金属中(其中 ,铈,镨,prom和钌),钡和铜; 使用包括甲醇作为溶剂的醇制备涂布溶液; 加入CFH-(CF)-COOH或HOCO-(CF)-COOH(n和m是正整数)作为防止涂层溶液的裂纹; 使用具有增加的防裂性的涂布溶液在基材上形成凝胶膜; 煅烧凝胶膜,使得在200℃以上的温度下,氧分压为3%以下的工序的总时间为7小时以下,形成煅烧膜; 并对烧结膜进行烧结和氧退火以形成氧化物超导体膜。
    • 8. 发明专利
    • Oxide superconductor, and manufacturing method of the same
    • 氧化物超导体及其制造方法
    • JP2009238557A
    • 2009-10-15
    • JP2008082683
    • 2008-03-27
    • Toshiba Corp株式会社東芝
    • HAYASHI MARIKOARAKI TAKESHI
    • H01B12/06C01G1/00C01G3/00H01B13/00H01F6/06
    • H01L39/143H01L39/2425H01L39/2451
    • PROBLEM TO BE SOLVED: To provide an oxide superconductor with an improved superconducting property and manufacturing method of the same through effective introduction of a pinning center. SOLUTION: The oxide superconductor 10 includes a substrate 12, a high crystalline oxide superconducting film 14 formed on top of the substrate 12, with orientation of crystal grains oriented almost perpendicular to the substrate and with an inclination angle between (100) planes of adjoining crystal grains, of 0° or more and 4° or less, or 86° or more and 90° or less. It also includes a layered structure composed of a plurality of high-density magnetic field trap layers 14a and c with the oxide superconductor film 14 laminated almost parallel to the substrate, and a low-density magnetic field trap layer 14b positioned between the high-density magnetic field trap layers 14a and c, with an average grain boundary width of the high density magnetic field trap layer 14a and c at a cross section horizontal to the substrate 12 to be 80 nm or less. Moreover, this average grain boundary width to be smaller than the average grain boundary width of the low-density magnetic field trap layer 14b at the cross section parallel to the substrate 12. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:通过有效引入钉扎中心来提供具有改进的超导性能的氧化物超导体及其制造方法。 解决方案:氧化物超导体10包括基板12,形成在基板12的顶部上的高结晶氧化物超导膜14,其中取向的晶体晶粒的<001>取向几乎垂直于基板,并且具有( 0°以上且4°以下,或86°以上且90°以下的相邻晶粒的100个面。 它还包括由多个高密度磁场陷阱层14a和c组成的分层结构,其中氧化物超导体膜14几乎平行于衬底,以及低密度磁场陷阱层14b,位于高密度 具有与基板12水平的横截面的高密度磁场陷阱层14a和c的平均晶界宽度的磁场陷阱层14a和c为80nm以下。 此外,该平均晶界宽度小于平行于基板12的截面的低密度磁场陷阱层14b的平均晶界宽度。(C)2010,JPO&INPIT