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1. 发明专利

JP2009252641A Method of producing superconducting oxide material 有权
标题翻译：生产超导氧化物材料的方法
公开(公告)号：JP2009252641A
公开(公告)日：2009-10-29
申请号：JP2008101536
申请日：2008-04-09
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： NAKAMURA TETSUSHIGE , SATO RYOSUKE , KOYANAGI KUNIHIKO , EBISAWA TAKASHI , OTSU HIDEHIKO , SOMA MITSUGI , TSUCHIYA TETSUO , KUMAGAI TOSHIYA , TSUKADA KENICHI
IPC分类号： H01B13/00 , C01G1/00 , C01G3/00 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a superconducting oxide material that achieves the same effect as that obtained by back irradiation even when forming a thinner film by overglazing without limiting laser irradiation conditions and even when forming films on both sides of a substrate.
SOLUTION: The method of producing an epitaxially grown superconducting coating material includes: a process (1) of applying a solution of metallic organic compound having an oxide for forming a superconducting material onto the substrate and drying it; a provisional firing process (2) of pyrolizing an organic matter in the metallic organic compound; and a full-scale firing process (3) of performing conversion into a superconducting material, wherein, when a laser is irradiated between the processes (1) and (2), a scattering mechanism is disposed immediately before a surface coated with the solution of metallic organic compound where the superconducting material is formed, and a laser, after being once scattered, is irradiated to the organic compound solution.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造超导氧化物材料的方法，即使在不限制激光照射条件的情况下甚至当在两侧形成膜时，通过过度玻璃形成较薄的膜也能获得与通过反向照射获得的效果相同的效果的基底。解决方案：制备外延生长的超导涂层材料的方法包括：将具有用于形成超导材料的氧化物的金属有机化合物溶液施加到基底上并干燥的方法（1）对金属有机化合物中的有机物进行热处理的暂时烧制工序（2）以及进行超导材料的转换的全尺寸焙烧工序（3），其中，当在工序（1）和（2）之间照射激光时，散射机构紧接在被涂覆有其中形成超导材料的金属有机化合物和被一次散射的激光照射到有机化合物溶液上。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2008198396A Manufacturing method of superconductive oxide material 有权
标题翻译：超导氧化物材料的制造方法
公开(公告)号：JP2008198396A
公开(公告)日：2008-08-28
申请号：JP2007029775
申请日：2007-02-08
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： SOMA MITSUGI , TSUCHIYA TETSUO , KUMAGAI TOSHIYA , TSUKADA KENICHI , KOYANAGI KUNIHIKO , EBISAWA TAKASHI , OTSU HIDEHIKO
IPC分类号： H01B12/06 , C01G1/00 , C01G3/00 , H01B13/00
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1245 , C23C18/1295 , C23C18/14 , H01L39/2451
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a large-area superconductive material with improved performance, and efficient without causing ablation, in carrying out thermal decomposition of a metal organic compound and heat treatment formation of a superconductive substance.
SOLUTION: In the manufacturing method of the superconductive oxide material for manufacturing a superconductive coating material epitaxially grown through a process (1) of coating organic compound solution of metal whose oxide forms a superconductive substance on a support body and drying it, a temporary calcination process (2) thermally decomposing organic components in the metal organic compound, and a proper calcination process (3) carrying out conversion into the superconductive substance, laser light is irradiated between the process (1) and the process (2).
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了提供一种具有改进的性能，高效率而不引起烧蚀的大面积超导材料的制造方法，在进行金属有机化合物的热分解和热处理形成超导物质时。解决方案：在用于制造超导涂层材料的超导氧化物材料的制造方法中，通过将氧化物形成超导性物质的金属的有机化合物溶液涂覆在载体上并干燥而外延生长，临时煅烧方法（2）将金属有机化合物中的有机成分热分解，进行超导性物质的转化的适当的煅烧工序（3）在工序（1）和工序（2）之间照射激光。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008037726A Process for producing superconducting oxide material 有权
标题翻译：生产超导氧化物材料的工艺
公开(公告)号：JP2008037726A
公开(公告)日：2008-02-21
申请号：JP2006217678
申请日：2006-08-10
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： SOMA MITSUGI , TSUCHIYA TETSUO , KUMAGAI TOSHIYA , TSUKADA KENICHI , KOYANAGI KUNIHIKO , EBISAWA TAKASHI , OTSU HIDEHIKO
IPC分类号： C01G1/00 , C01G3/00 , C30B29/22 , H01B12/06
CPC分类号： C01G1/02 , C01G3/006 , C01P2002/82 , C01P2006/40 , C23C18/1216 , C23C18/1283 , C23C18/1291 , C23C18/14 , C30B7/02 , C30B29/22 , H01L39/2425 , H01L39/2451
摘要： PROBLEM TO BE SOLVED: To provide a process in which a superconducting material of a large area with improved properties is efficiently produced through pyrolysis of a metallic organic compound and thermal treatment formation of a superconducting substance. SOLUTION: The process for producing a superconducting material having undergone epitaxial growth through the steps of (1) coating a support with a solution of an organic compound of a metal whose oxide forms a superconducting substance and drying the same, (2) preliminary firing for pyrolysis of the organic component of the organic compound of the metal and (3) principal firing for conversion to the superconducting substance, characterized in that between the step (1) and (2), at the time of laser beam irradiation, laser beam irradiation is carried out from the side opposite to the side coated with the solution of the organic compound of the metal for formation of the superconducting substance. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过金属有机化合物的热分解和超导物质的热处理形成有效地产生具有改进性能的大面积超导材料的方法。（1）用氧化物形成超导物质的金属的有机化合物的溶液涂覆载体并干燥所述超导材料的方法，（2）通过以下步骤进行外延生长的超导材料的制造方法：（1）对金属有机化合物的有机组分进行热解的初步烧制和（3）转换为超导物质的主要烧制，其特征在于，在步骤（1）和（2）之间，在激光束照射时，从与用于形成超导物质的金属的有机化合物的溶液涂覆的一侧相反的一侧进行激光束照射。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2011038175A Bilayer thin-film structure, trilayer thin-film structure containing superconductive substance, and manufacturing method therefor 有权
标题翻译：双层薄膜结构，含有超导材料的TRILAYER薄膜结构及其制造方法
公开(公告)号：JP2011038175A
公开(公告)日：2011-02-24
申请号：JP2009188585
申请日：2009-08-17
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial Science & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： SATO RYOSUKE , TERAO KATSUHIRO , NAKAMURA TETSUSHIGE , EBISAWA TAKASHI , SOMA MITSUGI , TSUCHIYA TETSUO , TSUKADA KENICHI , YAMAGUCHI IWAO
IPC分类号： C23C14/34 , H01B12/06 , H01B13/00
CPC分类号： Y02E40/642
摘要： PROBLEM TO BE SOLVED: To provide an Al
2 O
3 -CeO
2 bilayer thin-film structure which has a CeO
2 layer having the lattice constant varied and can provide a superconductive film having a high critical current on the CeO
2 face side by the effect of the CeO
2 layer; an Al
2 O
3 -CeO
2 -superconductive substance trilayer thin-film structure in which the superconductive film having the high critical current on the CeO
2 face side has been formed by using the Al
2 O
3 -CeO
2 bilayer thin-film structure and by utilizing the CeO
2 layer having the lattice constant varied; and a manufacturing method therefor.
SOLUTION: The Al
2 O
3 -CeO
2 bilayer thin-film structure has CeO
2 having the lattice constant of the CeO
2 layer varied, which is formed by preparing a thin film structure having a CeO
2 layer with a thickness of 20-300 nm on an Al
2 O
3 single crystal layer with a thickness of 0.4-1.0 mm and irradiating the thin film structure with a laserbeam having an energy density of 1 mJ/cm
2 to 250 mJ/cm
2 by 1,000-1,000,000 pulses. The Al
2 O
3 -CeO
2 -superconductive substance trilayer thin-film structure has a superconductive thin-film with a thickness of 100-800 nm provided on the CeO
2 layer side of the above Al
2 O
3 -CeO
2 bilayer thin-film structure. The method for manufacturing the structures is disclosed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有CeO 2 2 双层薄膜结构具有晶格常数的> 2 层变化，并且可以通过CeO 2 SBS 2 的作用在CeO 2 SBB 2面上提供具有高临界电流的超导膜。层; 其中在CeO上具有高临界电流的超导膜的导电物质三层薄膜结构的Al 2 3 -CeO 2 已经通过使用Al 2 3 -CeO 2 双层薄膜结构形成了 2 面侧，通过利用晶格常数变化的CeO 2 层; 及其制造方法。解决方案：Al 2 3 -CeO 2 双层薄膜结构具有CeO 2 具有 CeO 2 层的晶格常数变化，其通过在Al 2 O 3上制备厚度为20-300nm的具有CeO 2 S / SiO 2的薄膜结构而形成， SB> 2 > 3 单晶层，并用能量密度为1mJ / cm 2的激光束照射薄膜结构， / SP>至250mJ / cm 2 / SP> 1,000-1,000,000个脉冲。超导材料三层薄膜结构具有厚度为100-800的超导薄膜，具有超导薄膜，其厚度为100-800 nm，在上述Al 2 SB 3薄膜的CeO 2 层侧上提供。结构体。公开了制造结构的方法。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010036236A Laser beam irradiation method and apparatus 审中-公开
标题翻译：激光束辐射方法和装置
公开(公告)号：JP2010036236A
公开(公告)日：2010-02-18
申请号：JP2008205098
申请日：2008-08-08
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： NAKAMURA TETSUSHIGE , SATO RYOSUKE , KOYANAGI KUNIHIKO , TERAO KATSUHIRO , EBISAWA TAKASHI , OTSU HIDEHIKO
IPC分类号： B23K26/00 , B23K26/04 , B23K26/073 , B23K26/08 , H01L21/268 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a laser beam irradiation method and apparatus, which can perform uniform machining by eliminating adverse effects of heat when a photolytic reaction is caused on a substrate by laser beam irradiation. SOLUTION: In the laser beam irradiation method, the photolytic reaction is caused by irradiating a raw film precursor formed on the substrate with a laser beam in producing a thin film on the substrate. The laser beam is radiated while the substrate is rotated in the planar direction and is moved along the planar direction relative to a position to be irradiated with the laser beam. The irradiation apparatus includes a supporting section which supports the substrate on which the raw film is formed, a rotating mechanism which rotates the substrate, a moving mechanism which moves the substrate along the planar direction, a laser beam irradiation means which irradiates the substrate with the laser beam, and a controlling section which causes the photolytic reaction on the raw film by irradiating the substrate with the laser beam by the laser beam irradiation means while the substrate is rotated in the planar direction by the rotating mechanism and is moved relatively along the planar direction by the moving mechanism. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种激光束照射方法和装置，其可以通过在激光束照射下在基板上引起光解反应时消除热的不利影响而进行均匀的加工。解决方案：在激光束照射方法中，通过用激光束照射形成在基板上的原料膜前驱物在基板上产生薄膜而引起光解反应。激光束在基板沿平面方向旋转时被辐射并且相对于要被激光束照射的位置沿平面方向移动。照射装置包括：支撑部，其支撑形成有原料膜的基板;旋转基板的旋转机构;沿着平面方向移动基板的移动机构;激光束照射装置，激光束，以及控制部，其通过激光束照射装置在激光束照射基板的同时通过旋转机构在平面方向上旋转而沿着平面方向相对移动而在原料膜上引起光解反应，方向由移动机构。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2004233321A Method and detector for detecting hydrogen residual quantity 审中-公开
公开(公告)号：JP2004233321A
公开(公告)日：2004-08-19
申请号：JP2003025632
申请日：2003-02-03
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： TERAO KATSUHIRO , EBISAWA TAKASHI , MASHITA TORU
IPC分类号： G01N19/00 , G01N7/10
摘要： PROBLEM TO BE SOLVED: To solve a problem wherein an accurate hydrogen residual amount is difficult to be measured over a long period because powders and grains of a hydrogen storage substance are not connected and shape-held, in a method/detector stored independently with the hydrogen storage substance under a film state or under a storage condition in a tank, in which a volume change accompanied to hydrogen storage in the hydrogen storage substance is converted into the hydrogen storage amount. SOLUTION: A mixture molding 16 is provided in the hydrogen storage tank 1, the mixture molding 16 is expanded or contracted in response to a hydrogen occlusion amount, a scale of a scale member 38 indicated by a moving pointer 37 is read out to detect the residual amount of the hydrogen storage substance 2 in the hydrogen storage tank 1, using the residual amount detector having the mixture molding 16 molded after mixing the detecting hydrogen storage substance 16a and a rubbery elastomer 16b to be fixed to a hydrogen storage tank 1 side and having the pointer 37 in its tip side, and having the scale member 38 fixed to the hydrogen storage tank 1 side. COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2004074070A Hydrogen-permeable membrane 有权
标题翻译：氢渗透膜
公开(公告)号：JP2004074070A
公开(公告)日：2004-03-11
申请号：JP2002240080
申请日：2002-08-21
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： SASAKI TAKESHI , TAKAHASHI MASASHI , EBISAWA TAKASHI , TERAO KATSUHIRO , KABUTOMORI TOSHIKI
IPC分类号： B01D71/02 , C01B3/56 , C22C27/02 , H01M8/06
CPC分类号： Y02E60/50
摘要： PROBLEM TO BE SOLVED: To provide a hydrogen-permeable membrane using an inexpensive and easily obtainable material instead of Pd or a Pd alloy in order to solve the problem that Pd is very expensive and hard to obtain, the conventional hydrogen-permeable membrane is also very expensive since a large quantity of Pd is used and the price of a reformer is raised remarkably. SOLUTION: At least a part of the hydrogen-permeable membrane is formed from a Ta alloy which contains Ta as a base metal and one or more metallic elements selected from the group consisting of Au, Cr, Fe, Pt, Ru and W as additive metals. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题为了解决Pd非常昂贵且难以获得的问题，为了提供一种使用便宜且容易获得的材料代替Pd或Pd合金的氢渗透膜，常规的可渗透氢由于使用大量的Pd并且重整器的价格显着提高，膜也非常昂贵。解决方案：透氢膜的至少一部分由Ta合金形成，Ta合金含有作为基体金属的Ta和选自Au，Cr，Fe，Pt，Ru中的一种或多种金属元素，以及 W作为添加金属。版权所有（C）2004，JPO

8. 发明专利

JP2012142324A Plasma processing method and processing device 审中-公开
标题翻译：等离子体处理方法和处理装置
公开(公告)号：JP2012142324A
公开(公告)日：2012-07-26
申请号：JP2010291972
申请日：2010-12-28
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： TORAMARU MASAMITSU , EBISAWA TAKASHI , YONEUCHI TOSHIFUMI , ODAJIMA TAMOTSU
IPC分类号： H01L21/205 , C23C16/24
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method and processing device capable of efficiently producing a film-forming seed, and forming a high quality thin film.SOLUTION: A plasma processing device comprises a reaction chamber 1 storing processed body 3 and forming a thin film on the processed body 3; a stage 4 disposed in the reaction chamber 1, and holding the processed body 3; a first gas supplying portion 10 for supplying first gas into the reaction chamber 1; a second gas supplying portion 14 for supplying second gas different from the first gas into the reaction chamber 1; and a high frequency plasma source 7 for generating high frequency discharge in the reaction chamber 1. In the reaction chamber 1, the first gas plasmatized by the high frequency discharge, and the second gas suppressing plasmatization are contacted with each other to cause decomposition reaction, and on the basis of the decomposition reaction, a thin film is formed on the processed body 3 held on the stage 4.
摘要翻译：要解决的问题：提供能够有效地生产成膜种子并形成高质量薄膜的等离子体处理方法和处理装置。解决方案：等离子体处理装置包括：反应室1，储存处理体3并在处理体3上形成薄膜; 设置在反应室1中的台架4，并且保持处理体3; 用于将第一气体供应到反应室1中的第一气体供应部分10; 用于将不同于第一气体的第二气体供给到反应室1中的第二气体供给部14; 以及用于在反应室1中产生高频放电的高频等离子体源7.在反应室1中，通过高频放电等离子体化的第一气体和第二气体抑制等离子体化相互接触引起分解反应，并且在分解反应的基础上，在保持在载物台4上的加工体3上形成薄膜。（C）2012，JPO＆INPIT

9. 发明专利

JP2010238897A Semiconductor thin film substrate, and method of manufacturing semiconductor crystal thin film 审中-公开
标题翻译：半导体薄膜基板及制造半导体晶体薄膜的方法
公开(公告)号：JP2010238897A
公开(公告)日：2010-10-21
申请号：JP2009084972
申请日：2009-03-31
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： TAKAHASHI MASASHI , EBISAWA TAKASHI
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To prevent protrusions from being formed on the surface of a crystal thin film during crystallizing an amorphous thin film by melt heating.
SOLUTION: During crystallization by the melt heating, a buffer layer 3 buffering the volume change of the amorphous thin film 4 when crystallized by being melt at least its surface side and solidified is provided below the thin film 4. By merely adding one simple step of forming the buffer layer, the height of protrusions of the crystallized thin film can be sufficiently low in crystallization, resulting in a sufficiently thin insulating film. Furthermore, it is not necessary to introduce useless steps of such as polishing and etching when the protrusions are formed, thereby, enabling to achieve effects of such as prevention of the occurrence of contamination, improvement of the yield, and improvement of manufacturing efficiency.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了防止在通过熔融加热使无定形薄膜结晶期间在晶体薄膜的表面上形成突起。解决方案：在通过熔融加热结晶期间，缓冲层3缓冲非晶薄膜4的体积变化，当通过至少熔化至少其表面侧并固化而结晶化时，设置在薄膜4的下方。通过仅添加一个形成缓冲层的简单步骤，结晶化薄膜的突起的高度可以足够低的结晶化，从而形成足够薄的绝缘膜。此外，当形成突起时，不需要引入诸如抛光和蚀刻的无用步骤，从而能够实现防止污染发生，提高产量和提高制造效率的效果。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2004068049A Bcc solid solution type hydrogen storage alloy with excellent hydrogen migration capacity, and method for manufacturing the hydrogen storage alloy 审中-公开
公开(公告)号：JP2004068049A
公开(公告)日：2004-03-04
申请号：JP2002225898
申请日：2002-08-02
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： ARASHIMA HIRONOBU , EBISAWA TAKASHI , ITO HIDEAKI
IPC分类号： C23C30/00 , C22C19/00
摘要： PROBLEM TO BE SOLVED: To provide a BCC solid solution type hydrogen storage alloy used for a material for hydrogen storage, a hydrogen absorbing material for thermal conversion, a hydrogen supply material for fuel battery, a negative-electrode material for Ni-hydrogen battery, a material for hydrogen purification and recovery, a hydrogen absorbing material for hydrogen gas actuator, or the like and exhibiting excellent hydrogen absorption/desorption characteristics at ambient temperature (20 to 80°C) in particular and also to provide a method for manufacturing the alloy.
SOLUTION: A coating layer is formed on the surface of a BCC solid solution type hydrogen storage alloy by means of vapor deposition, sputtering, plating, etc., by using a material, such as LaNi
5 and Pd, having excellent ability of dissociating hydrogen molecules. By this method, reactivity at hydrogen absorption/desorption can be accelerated and hydrogen absorption/desorption in a solid-solution region can be facilitated, and an effect of increasing available hydrogen migration capacity can be obtained. Further, because of increased reactivity with hydrogen, the rate of hydrogenation can be increased and initial activation can be facilitated. Moreover, the slope of the plateau region can be reduced, depending on an alloy composition.
COPYRIGHT: (C)2004,JPO

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