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1. 发明专利

JP2009252641A Method of producing superconducting oxide material 有权
标题翻译：生产超导氧化物材料的方法
公开(公告)号：JP2009252641A
公开(公告)日：2009-10-29
申请号：JP2008101536
申请日：2008-04-09
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： NAKAMURA TETSUSHIGE , SATO RYOSUKE , KOYANAGI KUNIHIKO , EBISAWA TAKASHI , OTSU HIDEHIKO , SOMA MITSUGI , TSUCHIYA TETSUO , KUMAGAI TOSHIYA , TSUKADA KENICHI
IPC分类号： H01B13/00 , C01G1/00 , C01G3/00 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a superconducting oxide material that achieves the same effect as that obtained by back irradiation even when forming a thinner film by overglazing without limiting laser irradiation conditions and even when forming films on both sides of a substrate.
SOLUTION: The method of producing an epitaxially grown superconducting coating material includes: a process (1) of applying a solution of metallic organic compound having an oxide for forming a superconducting material onto the substrate and drying it; a provisional firing process (2) of pyrolizing an organic matter in the metallic organic compound; and a full-scale firing process (3) of performing conversion into a superconducting material, wherein, when a laser is irradiated between the processes (1) and (2), a scattering mechanism is disposed immediately before a surface coated with the solution of metallic organic compound where the superconducting material is formed, and a laser, after being once scattered, is irradiated to the organic compound solution.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造超导氧化物材料的方法，即使在不限制激光照射条件的情况下甚至当在两侧形成膜时，通过过度玻璃形成较薄的膜也能获得与通过反向照射获得的效果相同的效果的基底。解决方案：制备外延生长的超导涂层材料的方法包括：将具有用于形成超导材料的氧化物的金属有机化合物溶液施加到基底上并干燥的方法（1）对金属有机化合物中的有机物进行热处理的暂时烧制工序（2）以及进行超导材料的转换的全尺寸焙烧工序（3），其中，当在工序（1）和（2）之间照射激光时，散射机构紧接在被涂覆有其中形成超导材料的金属有机化合物和被一次散射的激光照射到有机化合物溶液上。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2013162049A Superconducting multilayer structure thin film 有权
标题翻译：超级多层结构薄膜
公开(公告)号：JP2013162049A
公开(公告)日：2013-08-19
申请号：JP2012024541
申请日：2012-02-07
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： TERAO KATSUHIRO , SATO RYOSUKE , KITADA NORITAKA , NAKAMURA TETSUSHIGE , SOMA MITSUGI , TSUCHIYA TETSUO , YAMAGUCHI IWAO
IPC分类号： H01L39/02 , B32B9/00 , C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00 , H01L39/00 , H01L39/24
CPC分类号： Y02E40/642
摘要： PROBLEM TO BE SOLVED: To provide a superconducting thin film structure suitable for filter applications not requiring advanced deposition device or technique, by producing a superconducting thin film mixing c-axis growth and a-axis growth without providing an extra buffer layer on a c-axis epitaxial growth superconducting thin film provided on a substrate, and to provide a manufacturing method therefor.SOLUTION: The superconducting thin film structure is provided by laminating a superconducting thin film, mixing c-axis growth and a-axis growth of the same chemical material as a c-axis epitaxial growth superconducting material, on a c-axis epitaxial growth superconducting thin film formed on a substrate, with no buffer layer interposed therebetween.
摘要翻译：要解决的问题：为了提供适用于不需要先进沉积装置或技术的过滤器应用的超导薄膜结构，通过生产混合c轴生长和a轴生长的超导薄膜，而不在c- 轴向外延生长超导薄膜，并提供其制造方法。解决方案：超导薄膜结构通过层压超导薄膜，混合c轴生长和同轴化学材料的a轴生长而提供作为c轴外延生长超导材料，在形成在衬底上的c轴外延生长超导薄膜上，其间没有缓冲层。

3. 发明专利

JP2012236744A Method for producing oxide superconductor film having alleviated internal stress 有权
标题翻译：用于生产含有内部应力的氧化物超导体膜的方法
公开(公告)号：JP2012236744A
公开(公告)日：2012-12-06
申请号：JP2011106931
申请日：2011-05-12
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所 , National Institute Of Advanced Industrial Science & Technology , 独立行政法人産業技術総合研究所
发明人： NAKAMURA TETSUSHIGE , KITADA NORITAKA , SATO RYOSUKE , TERAO KATSUHIRO , SOMA MITSUGI , TSUCHIYA TETSUO , TSUKADA KENICHI , YAMAGUCHI IWAO
IPC分类号： C30B29/22 , C01G1/00 , C30B1/04 , C30B31/20 , H01B12/06 , H01B13/00
CPC分类号： Y02E40/642
摘要： PROBLEM TO BE SOLVED: To form a film of a superconductive material on a sapphire substrate having a film thickness of ≥300 nm by suppressing generation of a microcrack, and to provide a method for producing the same.SOLUTION: In this method for producing an oxide superconductive material, a superconductive thin film material which is epitaxially grown on a substrate is produced through: a step (1) of applying an organic compound solution of a metal whose oxide forms a superconductive material onto a substrate so as to be dried; a laser irradiation step (2) of photolyzing an organic component in the organic compound of the metal by an excimer laser which is ultraviolet light; a temporary calcining step (3) of thermally decomposing the organic component in the organic compound of the metal; and a glost firing step (4) of performing conversion into a superconductive material. In the method, before performing the glost firing step, laser irradiation is performed only to a predetermined spot to intermingle an a-axially grown precursor spot with a c-axially grown precursor spot in the superconductive material, and then the glost firing step is performed, and thus only the predetermined spot is c-axially grown, to thereby alleviate internal stress of the superconductive material.
摘要翻译：要解决的问题：通过抑制微裂纹的产生，在具有≥300nm的膜厚的蓝宝石衬底上形成超导材料的膜，并提供其制造方法。解决方案：在该氧化物超导材料的制造方法中，通过以下步骤制造在衬底上外延生长的超导薄膜材料：（1）施加氧化物形成超导体的金属的有机化合物溶液材料在基材上以便被干燥; 激光照射步骤（2），其通过紫外光的准分子激光将金属的有机化合物中的有机成分光解; 将金属的有机化合物中的有机成分热分解的临时烧成工序（3）以及进行转换成超导材料的烧制步骤（4）。在该方法中，在进行灼烧步骤之前，只对预定的点进行激光照射，以将超轴向生长的前体斑点与c轴向生长的前体斑点混合在超导材料中，然后进行釉面烧制步骤，因此只有预定点被c轴向生长，从而减轻超导材料的内应力。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011038175A Bilayer thin-film structure, trilayer thin-film structure containing superconductive substance, and manufacturing method therefor 有权
标题翻译：双层薄膜结构，含有超导材料的TRILAYER薄膜结构及其制造方法
公开(公告)号：JP2011038175A
公开(公告)日：2011-02-24
申请号：JP2009188585
申请日：2009-08-17
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial Science & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： SATO RYOSUKE , TERAO KATSUHIRO , NAKAMURA TETSUSHIGE , EBISAWA TAKASHI , SOMA MITSUGI , TSUCHIYA TETSUO , TSUKADA KENICHI , YAMAGUCHI IWAO
IPC分类号： C23C14/34 , H01B12/06 , H01B13/00
CPC分类号： Y02E40/642
摘要： PROBLEM TO BE SOLVED: To provide an Al
2 O
3 -CeO
2 bilayer thin-film structure which has a CeO
2 layer having the lattice constant varied and can provide a superconductive film having a high critical current on the CeO
2 face side by the effect of the CeO
2 layer; an Al
2 O
3 -CeO
2 -superconductive substance trilayer thin-film structure in which the superconductive film having the high critical current on the CeO
2 face side has been formed by using the Al
2 O
3 -CeO
2 bilayer thin-film structure and by utilizing the CeO
2 layer having the lattice constant varied; and a manufacturing method therefor.
SOLUTION: The Al
2 O
3 -CeO
2 bilayer thin-film structure has CeO
2 having the lattice constant of the CeO
2 layer varied, which is formed by preparing a thin film structure having a CeO
2 layer with a thickness of 20-300 nm on an Al
2 O
3 single crystal layer with a thickness of 0.4-1.0 mm and irradiating the thin film structure with a laserbeam having an energy density of 1 mJ/cm
2 to 250 mJ/cm
2 by 1,000-1,000,000 pulses. The Al
2 O
3 -CeO
2 -superconductive substance trilayer thin-film structure has a superconductive thin-film with a thickness of 100-800 nm provided on the CeO
2 layer side of the above Al
2 O
3 -CeO
2 bilayer thin-film structure. The method for manufacturing the structures is disclosed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有CeO 2 2 双层薄膜结构具有晶格常数的> 2 层变化，并且可以通过CeO 2 SBS 2 的作用在CeO 2 SBB 2面上提供具有高临界电流的超导膜。层; 其中在CeO上具有高临界电流的超导膜的导电物质三层薄膜结构的Al 2 3 -CeO 2 已经通过使用Al 2 3 -CeO 2 双层薄膜结构形成了 2 面侧，通过利用晶格常数变化的CeO 2 层; 及其制造方法。解决方案：Al 2 3 -CeO 2 双层薄膜结构具有CeO 2 具有 CeO 2 层的晶格常数变化，其通过在Al 2 O 3上制备厚度为20-300nm的具有CeO 2 S / SiO 2的薄膜结构而形成， SB> 2 > 3 单晶层，并用能量密度为1mJ / cm 2的激光束照射薄膜结构， / SP>至250mJ / cm 2 / SP> 1,000-1,000,000个脉冲。超导材料三层薄膜结构具有厚度为100-800的超导薄膜，具有超导薄膜，其厚度为100-800 nm，在上述Al 2 SB 3薄膜的CeO 2 层侧上提供。结构体。公开了制造结构的方法。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010275119A Method and apparatus for producing superconductive oxide material 有权
标题翻译：用于生产超导氧化物材料的方法和装置
公开(公告)号：JP2010275119A
公开(公告)日：2010-12-09
申请号：JP2009126121
申请日：2009-05-26
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial Science & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： KITADA NORITAKA , NAKAMURA TETSUSHIGE , SATO RYOSUKE , KOYANAGI KUNIHIKO , SOMA MITSUGI , TSUKADA KENICHI , TSUCHIYA TETSUO , YAMAGUCHI IWAO , MANABE TAKAAKI , KUMAGAI TOSHIYA
IPC分类号： C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00
CPC分类号： Y02E40/642
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a superconductive oxide material by which a superconductive oxide film of good quality is obtained in a large area on a substrate and easy control is achieved. SOLUTION: In the method for producing a superconductive oxide material, at the time of producing a superconductive coating material epitaxially grown through a step (A) wherein an organic compound solution of a metal whose oxide forms a superconductive substance is applied onto a substrate and dried, a laser irradiation step (B) wherein the organic component of the organic compound of the metal is photodegraded with laser, a temporary firing step (C) wherein the organic component in the organic compound of the metal is thermally decomposed, and a concluding firing step (C) wherein conversion to a superconductive substance is performed, the laser irradiation of the step (B) is performed under substrate cooling by cooling the substrate (4) by surface contact of a cooling body with the substrate (4). COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种用于制造超导氧化物材料的方法，通过该方法可以在基板上大面积地获得质量好的超导氧化物膜，并且实现了容易的控制。解决方案：在制造超导氧化物材料的方法中，在制造通过其中将氧化物形成超导性物质的金属的有机化合物溶液施加到其上的步骤（A）外延生长的超导涂层材料时，基板并干燥，其中金属的有机化合物的有机组分用激光光降解的激光照射步骤（B），金属有机化合物中的有机组分被热分解的临时烧制步骤（C），以及执行转换为超导物质的结束烧制步骤（C），通过冷却体与基板（4）的表面接触来冷却基板（4），在基板冷却下进行步骤（B）的激光照射，。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2011114052A Method of manufacturing semiconductor substrate and laser annealing apparatus 有权
标题翻译：制造半导体基板和激光退火设备的方法
公开(公告)号：JP2011114052A
公开(公告)日：2011-06-09
申请号：JP2009267169
申请日：2009-11-25
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： KIYONO TOSHIAKI , SATO RYOSUKE , MITSUTA TAKAHIKO , SANO KAZUYA
IPC分类号： H01L21/265 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To effectively activate impurities of a semiconductor substrate without roughening its surface in activating the impurities.
SOLUTION: A harmonic laser beam having a wavelength of ≤390 nm is emitted onto an impurity-containing surface layer of a semiconductor substrate to activate the impurity. By the use of a laser beam with an absorption coefficient larger than a light absorption coefficient of a laser beam with a wavelength of 400 to 650 nm, the surface of the semiconductor substrate can be heated concentratedly, so that the impurity doped in an area shallower than 100 nm in the semiconductor substrate can be activated efficiently. By the use of a solid-state laser oscillator emitting a laser beam with a wavelength of ≤390 nm, a laser beam with a wavelength in an ultraviolet region similar to that of an excimer laser can be emitted at a repeating frequency as high as 6-12 kHz which is unique to a solid-state laser, with high pulse-to-pulse stability. Semiconductor substrates having stable quality can thereby be manufactured with high throughput.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了有效地激活半导体衬底的杂质，而在使杂质活化时不使其表面粗糙化。解决方案：将波长为≤390nm的谐波激光束发射到半导体衬底的含杂质表面层上以激活杂质。通过使用吸收系数大于波长为400〜650nm的激光的吸收系数的激光束，可以集中地加热半导体衬底的表面，使得在较浅的区域中掺杂的杂质可以有效地激活半导体衬底中的100nm以上。通过使用发射波长≤390nm的激光束的固体激光振荡器，可以以与受激准分子激光器类似的紫外线区域的波长的激光束以高达6的重复频率发射 -12 kHz，这是固态激光器独有的，具有高脉冲到脉冲稳定性。因此，可以高产量地制造质量稳定的半导体基板。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2012078005A Continuous heat treatment furnace 有权
标题翻译：连续热处理炉
公开(公告)号：JP2012078005A
公开(公告)日：2012-04-19
申请号：JP2010223536
申请日：2010-10-01
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： NAKAMURA TETSUSHIGE , TERAO KATSUHIRO , SATO RYOSUKE , KITADA NORITAKA
IPC分类号： F27B9/14 , F27B9/24 , F27B9/38 , F27B9/39 , F27D3/06 , F27D3/12
摘要： PROBLEM TO BE SOLVED: To provide a continuous heat treatment furnace capable of performing mass heat treatment for a comparatively long time by extending a residence time in the heat treatment furnace without extending a horizontal length of the heat treatment furnace and without changing a conveyance speed on the outside of the heat treatment furnace.SOLUTION: The continuous heat treatment furnace includes: a carrying part (carrying conveyor 15) for successively carrying laid plate-like objects 100 to be treated from the outside of the furnace 1 to the inside of the furnace 1; a vertical conveying passage (intra-furnace conveying means 5) for successively receiving the plate-like objects 100 to be treated in the furnace, holding the laid objects 100 to be treated on multiple stages in the vertical direction, and conveying the held objects 100 to be treated upward or downward in the furnace; and a carry-out part (carry-out conveyor 16) for successively receiving plate-like objects 100 to be heat treated while being conveyed through the vertical conveying passage on an upper position or a lower position in the conveyance direction and successively carrying out the received objects 100 to the outside of the processing furnace, so that heat treatment can be efficiently performed for a long time without extending the furnace length.
摘要翻译：要解决的问题：为了提供一种连续热处理炉，其能够在不延长热处理炉的水平长度的情况下延长在热处理炉中的停留时间并且不改变热处理炉外面的输送速度。解决方案：连续热处理炉包括：用于从炉1的外部向炉1内部依次承载待处理的板状物100的承载部（承载传送带15）垂直输送通道（炉内输送装置5），用于连续地接收在炉中待处理的板状物体100，将待处理的被处理物100沿垂直方向保持多级，并传送被保持物100 在炉中向上或向下处理; 以及输送部（输出输送机16），用于在沿着输送方向的上部位置或下部位置输送通过垂直输送通道，连续地接收待热处理的板状物体100，并依次进行接收物体100到处理炉的外部，使得可以长时间有效地进行热处理而不延长炉长度。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2010036236A Laser beam irradiation method and apparatus 审中-公开
标题翻译：激光束辐射方法和装置
公开(公告)号：JP2010036236A
公开(公告)日：2010-02-18
申请号：JP2008205098
申请日：2008-08-08
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： NAKAMURA TETSUSHIGE , SATO RYOSUKE , KOYANAGI KUNIHIKO , TERAO KATSUHIRO , EBISAWA TAKASHI , OTSU HIDEHIKO
IPC分类号： B23K26/00 , B23K26/04 , B23K26/073 , B23K26/08 , H01L21/268 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a laser beam irradiation method and apparatus, which can perform uniform machining by eliminating adverse effects of heat when a photolytic reaction is caused on a substrate by laser beam irradiation. SOLUTION: In the laser beam irradiation method, the photolytic reaction is caused by irradiating a raw film precursor formed on the substrate with a laser beam in producing a thin film on the substrate. The laser beam is radiated while the substrate is rotated in the planar direction and is moved along the planar direction relative to a position to be irradiated with the laser beam. The irradiation apparatus includes a supporting section which supports the substrate on which the raw film is formed, a rotating mechanism which rotates the substrate, a moving mechanism which moves the substrate along the planar direction, a laser beam irradiation means which irradiates the substrate with the laser beam, and a controlling section which causes the photolytic reaction on the raw film by irradiating the substrate with the laser beam by the laser beam irradiation means while the substrate is rotated in the planar direction by the rotating mechanism and is moved relatively along the planar direction by the moving mechanism. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种激光束照射方法和装置，其可以通过在激光束照射下在基板上引起光解反应时消除热的不利影响而进行均匀的加工。解决方案：在激光束照射方法中，通过用激光束照射形成在基板上的原料膜前驱物在基板上产生薄膜而引起光解反应。激光束在基板沿平面方向旋转时被辐射并且相对于要被激光束照射的位置沿平面方向移动。照射装置包括：支撑部，其支撑形成有原料膜的基板;旋转基板的旋转机构;沿着平面方向移动基板的移动机构;激光束照射装置，激光束，以及控制部，其通过激光束照射装置在激光束照射基板的同时通过旋转机构在平面方向上旋转而沿着平面方向相对移动而在原料膜上引起光解反应，方向由移动机构。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2012243900A Fiber forwarding laser optical system 有权
标题翻译：光纤转向激光光学系统
公开(公告)号：JP2012243900A
公开(公告)日：2012-12-10
申请号：JP2011111396
申请日：2011-05-18
申请人： Showa Optronics Co Ltd , 昭和オプトロニクス株式会社 , Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： YAHATA TOMONARI , AIDA YOSHIAKI , TOGASHI RYOTARO , SATO RYOSUKE , INAMI TOSHIO , KUSAMA HIDEAKI
IPC分类号： H01L21/268 , B23K26/06 , B23K26/073 , B23K26/08 , H01L21/20
CPC分类号： G02B27/30 , B23K26/0648 , B23K26/0652 , B23K26/0676 , B23K26/0738 , G02B6/0006 , G02B6/0008 , H01L21/02678 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To provide a laser optical system which can form laser light into a line beam which is small in short direction size even when an optical fiber for transmitting laser light from a laser oscillator has a large core diameter.SOLUTION: A fiber forwarding laser optical system 1 comprises: a first optical fiber 3 which transmits the laser light output from a laser oscillator 2; a collimator lens 4 which collimates the laser light emitted from the first optical fiber 3; a spherical surface array lens 5 which separates the laser light emitted from the collimator lens 4 into multipoint spots of laser light by a plurality of cells 5a; a plurality of second optical fibers 6 which have a smaller core diameter than the first optical fiber 3 and accept as incident light beams of laser light condensed on multiple points by the spherical surface array lens 5, whose emission ends 6b are arrayed in a linear row with their axis lines made parallel to each other; and optical systems 7 to 11 which form the laser light emitted from the plurality of second optical fibers 6 into a linear beam of laser light on an irradiation surface 12.
摘要翻译：要解决的问题：即使当用于传输来自激光振荡器的激光的光纤具有大的芯径时，也可以提供一种激光光学系统，该激光光学系统可以将激光形成在短方向尺寸小的线束中。光纤转发激光光学系统1包括：透射从激光振荡器2输出的激光的第一光纤3; 准直透镜4，其准直从第一光纤3发射的激光; 球面阵列透镜5，其通过多个单元5a将从准直透镜4发射的激光分离成多点激光; 多个第二光纤6，其具有比第一光纤3更小的芯直径，并且被作为由球面阵列透镜5在多个点上聚光的激光的入射光束接受，其发射端6b排列成线性排其轴线彼此平行; 以及形成从多个第二光纤6发射的激光的照射面12上的激光的线性光束的光学系统7〜11。（C）2013，JPO＆INPIT

10. 发明专利

JP2008243463A Patterning method of transparent electrode 有权
标题翻译：透明电极的方法
公开(公告)号：JP2008243463A
公开(公告)日：2008-10-09
申请号：JP2007079795
申请日：2007-03-26
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： SATO RYOSUKE
IPC分类号： H01B13/00 , G02F1/1343 , G09F9/30
摘要： PROBLEM TO BE SOLVED: To enable to carry out high-speed patterning of a transparent electrode without being accompanied by drainage treatment or the like.
SOLUTION: An ultraviolet-absorbing thin-film pattern 2 is formed on a substrate 1, a transparent electrode layer 3 is formed on the substrate 1 and the ultraviolet-absorbing thin-film pattern 2, and ultraviolet laser beams 8 are irradiated on the transparent electrode layer 3. The thin-film pattern 2 absorbing ultraviolet rays to be a base layer is photolyzed or pyrolyzed to be peeled off by the ultraviolet laser beams to enable to peel off the transparent electrode in whole, efficiently obtain a desired pattern, and also to carry out a large-area treatment at high speed. In another mode, after a transparent electrode layer is formed on a substrate, an ultraviolet-absorbing thin-film pattern is formed on the transparent electrode layer, and then, ultraviolet laser beams are irradiated on the transparent electrode layer. The thin-film pattern and a part of the transparent electrode layer other than where the thin-film pattern is formed are removed and patterned.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了能够进行透明电极的高速图案化而不伴随排水处理等。解决方案：在基板1上形成紫外线吸收薄膜图案2，在基板1和紫外线吸收薄膜图案2上形成透明电极层3，照射紫外线激光束8 吸收作为基底层的紫外线的薄膜图案2被光解或热解以被紫外线激光束剥离，从而能够全面地剥离透明电极，从而有效地获得期望的图案，并且高速进行大面积治疗。在另一方式中，在基板上形成透明电极层之后，在透明电极层上形成紫外线吸收薄膜图案，然后在透明电极层上照射紫外线激光。除去薄膜图案和除了形成薄膜图案之外的透明电极层的一部分，并将其图案化。版权所有（C）2009，JPO＆INPIT

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