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    • 4. 发明专利
    • Reflection imaging-type electron microscope
    • 反射成像电子显微镜
    • JP2006156134A
    • 2006-06-15
    • JP2004345113
    • 2004-11-30
    • Hitachi Ltd株式会社日立製作所
    • MURAKOSHI HISAYATODOKORO HIDEOHASEGAWA MASAKI
    • H01J37/29
    • PROBLEM TO BE SOLVED: To increase the contrast of a mirror electron microscope. SOLUTION: A separator 4 for separating an irradiated electron beam 101 and a reflected electron beam 102 of the mirror electron microscope is positioned between an objective lens 5 and an intermediate lens 8, and a restriction diaphragm 14 is positioned in a position 43 where the intermediate lens 8 projects an electron beam diffraction image of the reflected electron beam 102 formed in a focus position 41 of the objective lens 5. The restriction of the reflected electron beam using the restriction diaphragm 14 improves the contrast of a mirror electron microscope image. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:增加镜电子显微镜的对比度。 解决方案:用于分离被照射的电子束101和镜电子显微镜的反射电子束102的分离器4位于物镜5和中间透镜8之间,并且限制膜14位于位置43 其中中间透镜8投影形成在物镜5的聚焦位置41的反射电子束102的电子束衍射图像。使用限制膜14的反射电子束的限制改善了镜像电子显微镜图像的对比度 。 版权所有(C)2006,JPO&NCIPI
    • 5. 发明专利
    • Inspection method and inspection device using electron beam
    • 使用电子束的检查方法和检查装置
    • JP2010257994A
    • 2010-11-11
    • JP2010179920
    • 2010-08-11
    • Hitachi Ltd株式会社日立製作所
    • IWABUCHI HIROKOTODOKORO HIDEOMORI HIROYOSHISATO MITSUGIUSAMI YASUTSUGUICHIHASHI MIKIOFUKUHARA SATORUSHINADA HIROYUKIKANEKO YUTAKASUGIYAMA KATSUYATAKATO ATSUKOTOOYAMA HIROSHI
    • H01J37/28H01J37/244H01L21/66
    • PROBLEM TO BE SOLVED: To provide an inspection method and device, capable of performing the inspection at a higher speed, using an electron beam.
      SOLUTION: An electron beam 36 from an electron gun 1 is converged by an objective lens 9 and decelerated by a retarding voltage impressed to a sample 13; the sample 13 is scanned by the electron beam, while being moved; secondary electrons 33 generated from the sample 13 are accelerated by the retarding voltage to make a nearly parallel beam which is deflected by an E×B deflector 18, arranged between the objective lens 9 and the sample 13 and has a secondary electron generating body 19 irradiated; and second secondary electrons 20 are generated from the secondary electron generating body 19, and second detected by a charged particle detector 21. The output signal detected is stored as an image signal, and the image stored is compared in an operation section 29 and a defect determining section 30 to thereby determine defects.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供能够使用电子束以更高速度进行检查的检查方法和装置。 解决方案:来自电子枪1的电子束36被物镜9会聚并通过施加到样品13的延迟电压而减速; 样品13被电子束扫描同时被移动; 从样品13产生的二次电子33被延迟电压加速,以形成由配置在物镜9和样品13之间的E×B偏转器18偏转的近似平行的光,并且具有照射的二次电子发生体19 ; 并且从二次电子发生体19产生第二二次电子20,并且由带电粒子检测器21检测出第二二次电子20.检测出的输出信号作为图像信号存储,并且在操作部29中比较存储的图像和缺陷 确定部30,从而确定缺陷。 版权所有(C)2011,JPO&INPIT
    • 7. 发明专利
    • Distance measuring method of testpiece
    • TESTPIECE的距离测量方法
    • JP2006138856A
    • 2006-06-01
    • JP2005328896
    • 2005-11-14
    • Hitachi Ltd株式会社日立製作所
    • MIZUNO FUMIOTODOKORO HIDEO
    • G01B15/00H01J37/28
    • PROBLEM TO BE SOLVED: To measure distance which has been considered difficult between a specified structure, such as a structure with a surface structure, having large and hard unevenness and a structure embedded inside a testpiece, and a structure embedded at a depth different from that of the specified structure.
      SOLUTION: By incident energy that reaches a wiring pattern as the specified structure embedded inside the testpiece 2 to be reflected thereat and escape from the surface of the testpiece, electronic beams as charged particles are irradiated to a region containing the wiring pattern to scan the region. The reflected beams, reflected at the specified structure and secondary electron beams, which are discharged at the surface of the test piece when the incident energy escape from the surface of the test piece, are detected, and then the distance between the specified structure and the structure embedded at a different depth from that of the specified structure is determined.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了测量在诸如具有大而硬的不均匀性的表面结构的结构的特定结构和嵌入在试件内的结构之间已经被认为是困难的距离,以及嵌入在深度 与指定结构不同。 解决方案:按照嵌入在试件2内的特定结构的布线图案的入射能量,从反射面向试件的表面放出,将带电粒子的电子束照射到包含布线图案的区域 扫描区域。 检测在入射能量从试验片表面逃逸时在试片表面排出的以规定结构反射的反射光束和二次电子束,然后指定结构与 确定嵌入与指定结构不同深度的结构。 版权所有(C)2006,JPO&NCIPI
    • 8. 发明专利
    • Electron beam adjusting method, charged particle optical system control device and scanning electron microscope
    • 电子束调整方法,充电粒子光学系统控制装置和扫描电子显微镜
    • JP2006019301A
    • 2006-01-19
    • JP2005193288
    • 2005-07-01
    • Hitachi Ltd株式会社日立製作所
    • ESUMI MAKOTOOSE YOICHIIKEGAMI AKIRATODOKORO HIDEOISHIJIMA TATSUAKISATO TAKAHIROFUKAYA RITSUOASAO KAZUNARI
    • H01J37/21H01J37/20H01L21/027H01L21/66
    • PROBLEM TO BE SOLVED: To provide a charged particle beam irradiation method and a charged particle beam device suitable for reducing focus offset, magnification fluctuation, measurement length error in the charged particle beam device caused by charging on a sample. SOLUTION: In order to achieve the object, this invention provides a method of measuring the potential distribution on the sample by an electrostatic potentiometer for measuring the potential on the sample while the sample carried in by a carry-in mechanism of a charged particle beam passes. Further the invention provides a method of measuring local charging at a specified point on the sample and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Further the invention provides a method of correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种适用于减少对样品充电引起的带电粒子束装置中的聚焦偏移,放大波动,测量长度误差的带电粒子束照射方法和带电粒子束装置。 解决方案:为了实现该目的,本发明提供了一种通过静电电位计测量样品上的电势分布的方法,用于测量样品上的电位,而样品由携带的携带机构携带 粒子束通过。 此外,本发明提供了一种在样品上的特定点测量局部充电的方法,并且从这些局部静电电荷分离和测量广域静电电荷量。 此外,本发明提供了一种基于通过在至少两个带电粒子光学条件下测量指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法。 版权所有(C)2006,JPO&NCIPI
    • 9. 发明专利
    • Pattern measuring method and charged particle beam device
    • 图案测量方法和充电颗粒光束装置
    • JP2005338096A
    • 2005-12-08
    • JP2005193289
    • 2005-07-01
    • Hitachi Ltd株式会社日立製作所
    • ESUMI MAKOTOOSE YOICHIIKEGAMI AKIRATODOKORO HIDEOISHIJIMA TATSUAKISATO TAKAHIROFUKAYA RITSUOASAO KAZUNARI
    • G01B15/04H01J37/21H01J37/28H01L21/027H01L21/66
    • PROBLEM TO BE SOLVED: To provide a charged particle beam irradiation method suitable for reducing a focus deviation, a magnification fluctuation and a measured length value error in a charged particle beam device due to a charging on a sample and to provide the charged particle beam device. SOLUTION: To achieve the above those objects, a method is disclosed for measuring an electrical potential distribution on the sample with a static electrometer which measures the electrical potential on the sample during passing the sample loaded by a loading mechanism of the charged particle beam. Another method is disclosed for measuring a local charge at a specified point on the sample, and isolating and measuring a wide area charge quantity from this local charge quantity. Further, the charge quantity of the specified point is measured under at least two charged particle optical conditions, the fluctuation of the dimensional measured value due to the fluctuation of the charge quantity at the specified point is measured using the charged particle beam. Another method is disclosed for correcting the measured length value or the magnification based on the above fluctuation. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种适合于减少由于对样品进行充电而导致的带电粒子束装置中的聚焦偏差,放大波动和测量的长度值误差的带电粒子束照射方法,并且提供带电 粒子束装置。 解决方案:为了实现上述目的,公开了一种用静电静电计测量样品上的电势分布的方法,该静电静电计测量在通过由带电粒子的装载机构加载的样品时样品上的电势 光束。 公开了用于测量样品上指定点处的局部电荷以及从该局部电荷量分离和测量广域电荷量的另一种方法。 此外,在至少两个带电粒子光学条件下测量指定点的电荷量,使用带电粒子束测量由于指定点处的电荷量的波动引起的尺寸测量值的波动。 公开了用于基于上述波动来校正测量长度值或倍率的另一种方法。 版权所有(C)2006,JPO&NCIPI