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1. 发明专利

JP2009032703A Electron beam adjusting method, charged particle optical system control device, and scanning electron microscope 有权
标题翻译：电子束调整方法，充电粒子光学系统控制装置和扫描电子显微镜
公开(公告)号：JP2009032703A
公开(公告)日：2009-02-12
申请号：JP2008275024
申请日：2008-10-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ESUMI MAKOTO , OSE YOICHI , IKEGAMI AKIRA , TODOKORO HIDEO , ISHIJIMA TATSUAKI , SATO TAKAHIRO , FUKAYA RITSUO , ASAO KAZUNARI
IPC分类号： H01J37/28 , G01B15/00 , G01N23/00 , G01Q30/06 , G01Q30/18 , G01Q30/20 , G21K7/00 , H01J37/21
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam irradiation method and a charged particle beam device suitable for reducing focus offset, magnification fluctuation and measurement length value error in the charged particle beam device caused by charge on a sample. SOLUTION: In order to solve the above problem, this invention provides a method of measuring the potential distribution on the sample by an electrostatic potentiometer for measuring the potential on the sample while the sample carried in by a carry-in mechanism of a charged particle beam passes. Further the invention provides a method of measuring local charge at a specified point on the sample and isolating and measuring the wide area charge quantity from the amount of the local charge. Further the invention provides a method of correcting the measurement length value or magnification based on variations found by measuring the amounts of charge at the specified points in at least two charged particle optical conditions, and measuring the variation of a dimension measurement value using a charged particle beam caused by the variation of the amount of charge at the specified point. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种适用于减少由样品上的电荷引起的带电粒子束装置中的聚焦偏移，放大波动和测量长度值误差的带电粒子束照射方法和带电粒子束装置。解决方案：为了解决上述问题，本发明提供了一种通过静电电位计测量样品上的电位分布的方法，用于测量样品上的电位，而样品由携带机构带电粒子束通过。此外，本发明提供了一种在样品上的特定点测量局部电荷的方法，并且从局部电荷的量中分离和测量广域电荷量。此外，本发明提供了一种基于通过测量至少两个带电粒子光学条件中的指定点处的电荷量而发现的变化来校正测量长度值或倍率的方法，并且使用带电粒子测量尺寸测量值的变化由指定点的电荷量的变化引起的光束。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2012015113A Electron beam adjusting method, charged particle optical system control device and scanning electron microscope 有权
标题翻译：电子束调整方法，充电粒子光学系统控制装置和扫描电子显微镜
公开(公告)号：JP2012015113A
公开(公告)日：2012-01-19
申请号：JP2011154407
申请日：2011-07-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ESUMI MAKOTO , OSE YOICHI , IKEGAMI AKIRA , TODOKORO HIDEO , ISHIJIMA TATSUAKI , SATO TAKAHIRO , FUKAYA RITSUO , ASAO KAZUNARI
IPC分类号： H01J37/20 , G01B15/00 , G01B15/04 , G01N23/00 , G01Q30/06 , G01Q30/18 , G01Q30/20 , G21K7/00 , H01J37/21 , H01J37/22 , H01J37/28 , H01L21/66
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide a method and a device enabling highly precise inspection and measurement even if different electrification phenomena are included by considering the possibility that accurate inspection and measurement become difficult due to the different electrifications.SOLUTION: A device and a method are configured to subtract the potential obtained from a potential measurement result of the surface potential of a charged particle beam scanning point on the basis of potential distribution having wider range than the scanning point. With this configuration, accurate inspection and measurement can be performed by a scanning charged particle beam device even if there are electrification phenomena different in properties.
摘要翻译：要解决的问题：为了提供一种能够通过考虑由于不同的通电导致精确的检查和测量变得困难的可能性而包括不同的通电现象，从而能够进行高度精确的检查和测量的装置。解决方案：一种装置和方法被配置为基于具有比扫描点宽的范围的电位分布从电荷粒子束扫描点的表面电位的潜在测量结果中减去获得的电位。利用该配置，即使具有不同性质的通电现象，也可以通过扫描带电粒子束装置进行精确的检查和测量。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2006138864A Sample dimension measuring method and scanning electron microscope 审中-公开
标题翻译：样品尺寸测量方法和扫描电子显微镜
公开(公告)号：JP2006138864A
公开(公告)日：2006-06-01
申请号：JP2005364195
申请日：2005-12-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NASU OSAMU , KAWADA HIROKI , OTAKA TADASHI , FUKAYA RITSUO , ESUMI MAKOTO
IPC分类号： G01B15/00 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To accurately measure the length of a pattern or the like, formed on a surface of a semiconductor sample or the like regardless of suppression or reduction in the volume.
SOLUTION: In a charged particle beam system for measuring the line width or the like of a pattern formed on a sample based on secondary electrons emitted from a sample by scanning on the sample with a charged particle beam, interval of the scanning line of the charged particle beam is set not to exceed an irradiation density determined based on the physical properties of the sample. Alternatively, a length measurement value is operated based on a prestored approximate function.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：不管抑制或减小体积，都能精确地测量形成在半导体样品等的表面上的图案等的长度。解决方案：在用于通过用带电粒子束扫描样品的基础上从样品发射的二次电子来测量形成在样品上的图案的线宽等的带电粒子束系统中，扫描线的间隔被设置为不超过基于样品的物理性质确定的照射密度。或者，基于预先存储的近似函数来操作长度测量值。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2006019301A Electron beam adjusting method, charged particle optical system control device and scanning electron microscope 有权
标题翻译：电子束调整方法，充电粒子光学系统控制装置和扫描电子显微镜
公开(公告)号：JP2006019301A
公开(公告)日：2006-01-19
申请号：JP2005193288
申请日：2005-07-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ESUMI MAKOTO , OSE YOICHI , IKEGAMI AKIRA , TODOKORO HIDEO , ISHIJIMA TATSUAKI , SATO TAKAHIRO , FUKAYA RITSUO , ASAO KAZUNARI
IPC分类号： H01J37/21 , H01J37/20 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam irradiation method and a charged particle beam device suitable for reducing focus offset, magnification fluctuation, measurement length error in the charged particle beam device caused by charging on a sample. SOLUTION: In order to achieve the object, this invention provides a method of measuring the potential distribution on the sample by an electrostatic potentiometer for measuring the potential on the sample while the sample carried in by a carry-in mechanism of a charged particle beam passes. Further the invention provides a method of measuring local charging at a specified point on the sample and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Further the invention provides a method of correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种适用于减少对样品充电引起的带电粒子束装置中的聚焦偏移，放大波动，测量长度误差的带电粒子束照射方法和带电粒子束装置。解决方案：为了实现该目的，本发明提供了一种通过静电电位计测量样品上的电势分布的方法，用于测量样品上的电位，而样品由携带的携带机构携带粒子束通过。此外，本发明提供了一种在样品上的特定点测量局部充电的方法，并且从这些局部静电电荷分离和测量广域静电电荷量。此外，本发明提供了一种基于通过在至少两个带电粒子光学条件下测量指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005338096A Pattern measuring method and charged particle beam device 有权
标题翻译：图案测量方法和充电颗粒光束装置
公开(公告)号：JP2005338096A
公开(公告)日：2005-12-08
申请号：JP2005193289
申请日：2005-07-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ESUMI MAKOTO , OSE YOICHI , IKEGAMI AKIRA , TODOKORO HIDEO , ISHIJIMA TATSUAKI , SATO TAKAHIRO , FUKAYA RITSUO , ASAO KAZUNARI
IPC分类号： G01B15/04 , H01J37/21 , H01J37/28 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam irradiation method suitable for reducing a focus deviation, a magnification fluctuation and a measured length value error in a charged particle beam device due to a charging on a sample and to provide the charged particle beam device. SOLUTION: To achieve the above those objects, a method is disclosed for measuring an electrical potential distribution on the sample with a static electrometer which measures the electrical potential on the sample during passing the sample loaded by a loading mechanism of the charged particle beam. Another method is disclosed for measuring a local charge at a specified point on the sample, and isolating and measuring a wide area charge quantity from this local charge quantity. Further, the charge quantity of the specified point is measured under at least two charged particle optical conditions, the fluctuation of the dimensional measured value due to the fluctuation of the charge quantity at the specified point is measured using the charged particle beam. Another method is disclosed for correcting the measured length value or the magnification based on the above fluctuation. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种适合于减少由于对样品进行充电而导致的带电粒子束装置中的聚焦偏差，放大波动和测量的长度值误差的带电粒子束照射方法，并且提供带电粒子束装置。解决方案：为了实现上述目的，公开了一种用静电静电计测量样品上的电势分布的方法，该静电静电计测量在通过由带电粒子的装载机构加载的样品时样品上的电势光束。公开了用于测量样品上指定点处的局部电荷以及从该局部电荷量分离和测量广域电荷量的另一种方法。此外，在至少两个带电粒子光学条件下测量指定点的电荷量，使用带电粒子束测量由于指定点处的电荷量的波动引起的尺寸测量值的波动。公开了用于基于上述波动来校正测量长度值或倍率的另一种方法。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2013092530A Adjusting method for electron beam, charged particle optical system control device, and scanning electronic microscope 有权
标题翻译：电子束调整方法，充电粒子光学系统控制装置和扫描电子显微镜
公开(公告)号：JP2013092530A
公开(公告)日：2013-05-16
申请号：JP2012286603
申请日：2012-12-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ESUMI MAKOTO , OSE YOICHI , IKEGAMI AKIRA , TODOKORO HIDEO , ISHIJIMA TATSUAKI , SATO TAKAHIRO , FUKAYA RITSUO , ASAO KAZUNARI
IPC分类号： G01B15/00 , G01B15/04 , G01N23/00 , G01Q30/06 , G01Q30/18 , G01Q30/20 , G21K7/00 , H01J37/21 , H01J37/28
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide a method and device that enable high-precision inspection and measurement even if a different electrification phenomenon is included while taking into consideration the possibility that it is difficult to perform accurate inspection and measurement since different types of electrification are present together.SOLUTION: There is provided the method and device for correcting a pattern size obtained by charged particle beam irradiation based upon a fitting function showing change in electrification condition. In a configuration like this, accurate inspection and measurement can be performed by a scanning charged particle beam device even if different types of electrification with different characteristics are present together.
摘要翻译：要解决的问题：提供即使在包括不同的带电现象的同时考虑到难以进行精确的检查和测量的可能性的高精度检查和测量的方法和装置，因为不同类型的电气化一起存在。解决方案：提供了一种用于校正通过带电粒子束照射获得的图案尺寸的方法和装置，其基于表示电气化条件变化的拟合函数。在这样的结构中，即使具有不同特性的不同类型的带电一起存在，也可以通过扫描带电粒子束装置进行精确的检查和测量。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2009200054A Electron beam adjusting method, charged particle optical system control device and scanning electron microscope 有权
标题翻译：电子束调整方法，充电粒子光学系统控制装置和扫描电子显微镜
公开(公告)号：JP2009200054A
公开(公告)日：2009-09-03
申请号：JP2009124837
申请日：2009-05-25
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ESUMI MAKOTO , OSE YOICHI , IKEGAMI AKIRA , TODOKORO HIDEO , ISHIJIMA TATSUAKI , SATO TAKAHIRO , FUKAYA RITSUO , ASAO KAZUNARI
IPC分类号： H01J37/21 , G01N23/00 , G01Q30/06 , G01Q30/18 , G01Q30/20 , G01R29/24 , G21K7/00 , H01J37/28 , H01L21/66
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam irradiation method and a charged particle beam device suitable for reducing focus offset, magnification fluctuation, measurement length error in the charged particle beam device caused by charging on a sample.
SOLUTION: In order to achieve the objective, this invention provides a method of measuring a potential distribution on the sample by an electrostatic potentiometer for measuring the potential on the sample while the sample carried in by a carry-in mechanism of a charged particle beam passes. And also, the invention provides a method of measuring local charging at a predetermined point on the sample and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Moreover, the invention provides a method of correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the predetermined points under at least two charged particle optical conditions, and further, measuring a change of dimension measurement value with the use of the charged particle beam accompanying the change of the amount of electrostatic charge at the predetermined points.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种适用于减少由样品充电引起的带电粒子束装置中的聚焦偏移，放大波动，测量长度误差的带电粒子束照射方法和带电粒子束装置。解决方案：为了实现该目的，本发明提供了一种通过静电电位计测量样品上的电势分布的方法，用于测量样品上的电位，而样品由携带的携带机构携带粒子束通过。此外，本发明还提供了一种在样品上的预定点测量局部充电的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。此外，本发明提供一种基于通过测量至少两个带电粒子光学条件下的预定点处的静电电荷量而发现的波动来校正测量长度值或倍率的方法，并且还测量尺寸测量值的变化，使用伴随着预定点的静电电荷量的变化的带电粒子束。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2007003535A Sample dimension measuring method, and scanning electron microscope 审中-公开
标题翻译：样品尺寸测量方法和扫描电子显微镜
公开(公告)号：JP2007003535A
公开(公告)日：2007-01-11
申请号：JP2006223747
申请日：2006-08-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NASU OSAMU , KAWADA HIROKI , OTAKA TADASHI , FUKAYA RITSUO , ESUMI MAKOTO
IPC分类号： G01B15/00 , H01J37/147 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To correctly measure a size of a pattern which shrinks by irradiation of an electron beam by suppressing the shrink in measuring the pattern.
SOLUTION: Based on combinations of magnifications stored in a memory device which stores a plurality of combinations of X-direction measuring magnifications and Y-direction magnifications lower than the X-direction magnifications, the electron beam is deflected in a rectangle having a short side in the X-direction and a long side in the Y-direction, the pattern is displayed so that the shape of the pattern in the Y-direction gets narrower with respect to the X-direction, and a size of the pattern in the X-direction is measured based on a pattern image displayed on a display region.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过抑制测量图案的收缩来正确地测量通过照射电子束而收缩的图案的尺寸。解决方案：基于存储在存储X方向测量放大率和低于X方向放大率的Y方向倍率的多个组合的存储器件中的放大率的组合，电子束在具有 X方向的短边和Y方向的长边，显示图案，使得图案在Y方向上的形状相对于X方向变窄，并且图案的尺寸基于在显示区域上显示的图案图像来测量X方向。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2005331524A Measuring technique of sample dimension and scanning electron microscope 有权
标题翻译：样品尺寸和扫描电子显微镜的测量技术
公开(公告)号：JP2005331524A
公开(公告)日：2005-12-02
申请号：JP2005228998
申请日：2005-08-08
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NASU OSAMU , KAWADA HIROKI , OTAKA TADASHI , FUKAYA RITSUO , ESUMI MAKOTO
IPC分类号： G01B15/00
摘要： PROBLEM TO BE SOLVED: To implement correct length measurement by suppressing volume reduction or regardless of volume reduction of patterns and others formed on surfaces of semiconductor samples and the like.
SOLUTION: In a charged particle ray device implementing length measurement of line width of patterns and the like formed on samples by scanning samples with charged particle rays and based on secondary electrons emitted from the samples, a spacing of scanning lines of the aforementioned charged particle rays is set so as not to exceed irradiation density determined from a physical property of samples. Or length measurement value is calculated from the approximate function memorized previously.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过抑制体积减小或者不管在半导体样品等的表面上形成的图案和其他形状的体积减小来实现正确的长度测量。解决方案：在带电粒子射线装置中，通过用带电粒子射线扫描样品并且基于从样品发射的二次电子，实现在样品上形成的图案线宽等的长度测量，上述的扫描线的间隔带电粒子束被设定为不超过从样品的物理性质确定的照射密度。或长度测量值根据先前记忆的近似函数计算。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JPH04364963A THERMAL RECORDING HEAD 失效
公开(公告)号：JPH04364963A
公开(公告)日：1992-12-17
申请号：JP16611391
申请日：1991-06-12
申请人： HITACHI LTD
发明人： HIDA HIROYUKI , FUKAYA RITSUO
IPC分类号： B41J2/335 , H05K3/28
摘要： PURPOSE:To prevent the deterioration of the linearity accuracy of a resistor caused by the warpage of a substrate due to the difference in the coefficient of thermal expansion and to omit a protective cover by protecting the connection part between a head substrate and a driving IC by a resin cured without requiring heating. CONSTITUTION:An alumina substrate 1, a resistor 2, a glass protective layer 3, an electrode 4, a glass epoxy substrate 5, an integrated circuit element 6, gold wires 7, 8 and an aluminum heat sink 11 are provided. By using an ultraviolet curable acrylate type resin as the protective resin 9 covering the connection region of the integrated circuit element 6 and the gold wires 7, 8, surface curability becomes excellent and abrasion resistance becomes good. Further, the deformation due to the slide contact with recording paper or the generation of an abrasion powder is eliminated and good printing quality can be kept. Since no heating is required at the time of curing, the deformation of the substrate can be prevented by suppressing the generation of heat stress caused by the difference in the coefficient of thermal expansion and the linearity accuracy of the resistor is not impaired. Since a protective cover can be omitted, a structure becomes simple and a recording head can be inexpensively prepared.

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