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1. 发明专利

JP2009145353A Pattern inspection device 有权
标题翻译：图案检查装置
公开(公告)号：JP2009145353A
公开(公告)日：2009-07-02
申请号：JP2008323107
申请日：2008-12-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MURAKOSHI HISAYA , YAJIMA YUSUKE , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , UMEMURA KAORU , HASEGAWA MASAKI , KURODA KATSUHIRO
IPC分类号： G01N23/225 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a pattern inspection device and a pattern inspection method for inspecting a semiconductor or the like quickly.
SOLUTION: This pattern inspection device includes at least three or more of electronic optical systems, and compares detection signals obtained substantially concurrently in same circuit patterns. A degree of vacuum in a vicinity of a plurality of electron sources is kept very high all the time by vacuum-evacuating an electron gun chamber with a plurality of electron sources mounted independently from a sample chamber. An electric field and a magnetic field are sealed within the respective electronic optical systems by a shielding electrode for vacuum-evacuating an electron beam path, and a negative voltage is set to a sample to accelerate a secondary electron and a reflected electron to a direction of an electron source side in an electron beam optical axis, so as to detect the secondary electron and the reflected electron within the same electronic optical system. Defects are determined thereby at the same time in the pattern inspection, and a throughput of the inspection is improved proportionally to the number of the electronic optical systems.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种快速检查半导体等的图案检查装置和图案检查方法。解决方案：该图案检查装置包括至少三个或更多个电子光学系统，并且以相同的电路图案基本同时获得的检测信号进行比较。通过用独立于样品室安装的多个电子源对电子枪室进行真空抽真空，多个电子源附近的真空度保持非常高。通过用于真空排出电子束路径的屏蔽电极将电场和磁场密封在各个电子光学系统内，并且将负电压设置为样品，以将二次电子和反射电子加速到在电子束光轴中的电子源侧，以便检测同一电子光学系统内的二次电子和反射电子。因此在图案检查中同时确定缺陷，并且与电子光学系统的数量成比例地改进检查的生产量。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2005311386A Wafer inspection device 有权
标题翻译：波形检测装置
公开(公告)号：JP2005311386A
公开(公告)日：2005-11-04
申请号：JP2005134893
申请日：2005-05-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAJIMA YUSUKE , UMEMURA KAORU , TAJI SHINICHI , MURAKOSHI HISAYA , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , HASEGAWA MASAKI , MAKINO HIROSHI
IPC分类号： B23K15/00 , H01J37/20 , H01J37/30 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection device, capable of performing the visual inspection of a semiconductor at a high speed with high resolution and uniformly preparing a sample for TEM observation and various analyses, with high position accuracy, from a region where foreign matters or defects exist.
SOLUTION: A scanning electron microscope section (SEM section) 1 for wafer inspection and an ion beam section 101 for preparing and processing a sample are provided side by side in the same inspection device, it is designed to consistenly perform visual inspection of the wafer 7 with the SEM section 1 and an extraction and processing of the specimen for the TEM observation and various analyses from the region, where defects (foreign matters or defective patterns) are present on the wafer 7 on the stage 8, based on the results of the inspection.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种检查装置，能够以高分辨率高速度地进行半导体的目视检查，并且从位置精确度均匀地制备用于TEM观察的样本和各种分析存在异物或缺陷。解决方案：用于晶片检查的扫描电子显微镜部分（SEM部分）1和用于制备和处理样品的离子束部分101并排地设置在同一检查装置中，其被设计为一致地执行目视检查具有SEM部分1的晶片7以及用于TEM观察的样本的提取和处理以及在阶段8上的晶片7上存在缺陷（异物或缺陷图案）的区域的各种分析，基于检查结果。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005142168A Electron ray apparatus 有权
标题翻译：电子装置
公开(公告)号：JP2005142168A
公开(公告)日：2005-06-02
申请号：JP2005002008
申请日：2005-01-07
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MURAKOSHI HISAYA , MAKINO HIROSHI , SHINADA HIROYUKI , IWABUCHI HIROKO , FUKUHARA SATORU
IPC分类号： H01J37/04 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide an electron ray apparatus with high resolution and low acceleration voltage.
SOLUTION: A voltage applied to a deceleration lens 8 for decelerating a primary electron ray 101 down to a sample irradiation voltage after the primary electron ray 101 passes through an objective lens 5 is changed to adjust the movement of the sample observation image to be minimized by an aligner 25 for the deceleration lens provided between the objective lens 6 and the deceleration lens 8, thereby adjustment of an optical axis of the electron ray is made relative to the deceleration lens 8.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高分辨率和低加速电压的电子射线装置。解决方案：改变在一次电子射线101通过物镜5之后，将用于将一次电子束101减速到一个样品照射电压的减速透镜8上的电压，以将样本观察图像的移动调整为通过用于物镜6和减速透镜8之间的减速透镜的对准器25最小化，从而相对于减速透镜8调整电子束的光轴。（C）2005 ，JPO＆NCIPI

4. 发明专利

JP2009110978A Ion beam device 有权
标题翻译：离子束装置
公开(公告)号：JP2009110978A
公开(公告)日：2009-05-21
申请号：JP2009034721
申请日：2009-02-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAJIMA YUSUKE , UMEMURA KAORU , TAJI SHINICHI , MURAKOSHI HISAYA , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , HASEGAWA MASAKI , MAKINO HIROSHI
IPC分类号： H01J37/317 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection device capable of consistently manufacturing a sample for appearance inspection of a semiconductor wafer in high speed and high resolution and for TEM observation or various analyses from an existing part of foreign matters or defects, with high positioning accuracy.
SOLUTION: A scanning electron microscope part (an SEM part) for wafer inspection 1 and an ion beam part 101 for a sample manufacturing process are provided together in the same inspection device, appearance inspection of the wafer 7 by the SEM part 1, and an extracting processing operation of the sample for TEM observation from an existing part of a defect (a foreign matter or a pattern defect) on the wafer 7 and various analyses based on the inspection result, are made enabled to consistently carry out on the same stage 8.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种检测装置，其能够以高速和高分辨率一贯地制造用于半导体晶片的外观检查的样品，并且可以从现有部分的异物或缺陷进行TEM观察或各种分析，定位精度高。解决方案：用于晶片检查的扫描电子显微镜部分（SEM部分）1和用于样品制造过程的离子束部分101一起设置在相同的检查装置中，通过SEM部分1对晶片7进行外观检查，并且从晶片7上的缺陷的现有部分（异物或图案缺陷）的现有部分进行TEM观察的提取处理操作以及基于检查结果的各种分析，能够一致地执行相同阶段8.版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2007003539A Circuit pattern inspection device 有权
标题翻译：电路图案检查装置
公开(公告)号：JP2007003539A
公开(公告)日：2007-01-11
申请号：JP2006238865
申请日：2006-09-04
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHINADA HIROYUKI , TAKATO ATSUKO , NINOMIYA TAKANORI , SASAKI HIROKO , NOZOE MARI , MURAKOSHI HISAYA , NINOMIYA HIROSHI , KASAI YUJI
IPC分类号： G01B15/04 , G01N23/225 , H01J37/244 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To improve efficiency of condition setting, to shorten inspection time, and to improve reliability of an inspection, in a circuit pattern inspection device for inspecting, with an electron beam, a defect, foreign substance, residue, or the like of the same design pattern of a semiconductor device on a wafer in a manufacturing process of the semiconductor device.
SOLUTION: The circuit pattern inspection device independently has a detection signal processing circuit for forming a large current high-speed image for detecting the presence of the defect, and a detection signal processing circuit for forming an image in a specific narrow part detected by this defect detecting inspection. Alternatively, a first electron optical system for the defect detecting inspection and a second electron optical system only for review for observing a specific narrow part detected by the defect detecting inspection are stored in parallel in the same vacuum vessel. Alternatively, a first detector for the defect detecting inspection and a second detector only for review for observing a specific narrow part detected by the defect detecting inspection are disposed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提高条件设定的效率，缩短检查时间，提高检查的可靠性，在电子束检查装置中，通过电子束检查缺陷，异物，残留物，在半导体器件的制造过程中晶片上的半导体器件的相同设计图案等。解决方案：电路图形检查装置独立地具有用于形成用于检测缺陷的存在的大电流高速图像的检测信号处理电路，以及用于形成检测到的特定窄部分中的图像的检测信号处理电路通过该缺陷检测检查。或者，用于缺陷检测检查的第一电子光学系统和仅用于观察由缺陷检测检查检测到的特定窄部分的检查的第二电子光学系统并行存储在同一真空容器中。或者，设置用于缺陷检测检查的第一检测器和仅用于观察由缺陷检测检查检测到的特定窄部分的检查的第二检测器。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006162609A Method and system for pattern inspection using electron beam 有权
标题翻译：使用电子束的图案检查的方法和系统
公开(公告)号：JP2006162609A
公开(公告)日：2006-06-22
申请号：JP2005333561
申请日：2005-11-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIROI TAKASHI , KUNI TOMOHIRO , WATANABE MASAHIRO , SHISHIDO CHIE , SHINADA HIROYUKI , GUNJI YASUHIRO , TAKATO ATSUKO
IPC分类号： G01N23/225 , G01B15/04 , H01J37/22 , H01J37/244 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for pattern inspection using electron beam, which can solve the problem inherent to the present technology in electron optics systems or detectors requiring detector of above a certain area or larger as an important factor for irradiating electron beam and detect its secondary electrons, etc. at a high speed, where the detection of 200 Msps or higher is actually difficult due to the constraint of the frequency being inversely proportional to the area.
SOLUTION: For example, to detect at 400 Msps with the required area set as 4 mm angle and speed at this 4 mm angle as 150 Msps, four simple detectors of high-speed 2 mm angle are aligned, signals of them are amplified and then added to be subject to A/D conversion. Alternatively, a secondary electronic deflector is used to allow secondary electrons to sequentially be incident into the detector of 8 mm angle, detected at 100 Msps, and then aligned after A/D conversion. Both of these methods can achieve an area of 4 mm angle and a speed of 400 Msps.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用电子束进行图案检查的方法和系统，其可以解决当前技术中固有的电子光学系统或需要高于某一区域或更大的检测器的检测器的重要问题作为重要的问题用于照射电子束的因子并且以高速检测其二次电子等，其中由于频率与面积成反比的约束，实际上难以检测到200 Msps或更高。
解决方案：例如，为了检测400 Msps，所需区域设置为4 mm角，速度为4 mm，为150 Msps，高速2 mm角的四个简单检测器对齐，其信号为放大后再添加进行A / D转换。或者，二次电子偏转器用于允许二次电子顺序地入射到以100 Msps检测到的8mm角的检测器中，然后在A / D转换之后对准。这两种方法都可以达到4 mm角，400 Msps的速度。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006024921A Inspection method and device by charged particle beam 有权
标题翻译：通过充电颗粒束检查方法和装置
公开(公告)号：JP2006024921A
公开(公告)日：2006-01-26
申请号：JP2005176062
申请日：2005-06-16
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NISHIYAMA HIDETOSHI , NOZOE MARI , SHINADA HIROYUKI
IPC分类号： H01L21/66 , G01N23/225 , G01R31/302 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide an inspection method, capable of obtaining the distribution or the trend of the electric resistance and electric capacity of the entire surface of a substrate in a short time in inspection of defect in a substrate, such as a semiconductor device or liquid crystal. SOLUTION: A substrate to be inspected 9 such as a semiconductor wafer etc. is irradiated with charged particle beams 19, generated secondary electrons or back scattered electrons are captured into a detector 20, signals in proportion to the number of taken-in electrons are caused to occur, and an inspection image is formed on the basis of the signals. The current value and the irradiation energy of the charged particle beams, the electric field on the surface of the substrate to be inspected, the emission efficiency of the secondary electrons and back scattered electrons, etc., all taken into consideration, the electrical resistance and the electrical capacity are determined so as to match with those of the inspection image. By utilizing the charge by the electron beam irradiation, a defect is detected by performing inspection, by acquiring a potential contrast image in a state in which the difference in the electrical resistance value between the normal part and the defective part is increased sufficiently. Thus, by estimating the electrical resistance or the electrical capacity, and providing measures against abnormality at an early stage in the substrate manufacturing process, the ratio of defective substrates can be reduced and productivity can be increased. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种检查方法，能够在短时间内获得衬底的整个表面的电阻和电容的分布或趋势，以检查衬底中的缺陷，例如半导体器件或液晶。解决方案：对被检查的基板9（例如半导体晶片等）照射带电粒子束19，产生的二次电子或背散射电子被捕获到检测器20中，与被接收的数量成比例的信号导致发生电子，并且基于该信号形成检查图像。所考虑的电荷粒子束的电流值和照射能量，待检测基片的表面电场，二次电子和背散射电子的发射效率等都被考虑在内，电阻和电容量被确定为与检查图像的电容相匹配。通过利用电子束照射的电荷，通过在正常部分和缺陷部分之间的电阻值的差充分增加的状态下获取潜在的对比度图像，通过进行检查来检测缺陷。因此，通过估计电阻或电容，并且在基板制造工艺中提供早期的异常措施，可以降低不良基板的比例并提高生产率。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005347281A Circuit pattern inspection device 有权
标题翻译：电路图案检查装置
公开(公告)号：JP2005347281A
公开(公告)日：2005-12-15
申请号：JP2005237080
申请日：2005-08-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TAKATO ATSUKO , MURAKOSHI HISAYA , SHINADA HIROYUKI , OSHIMA TAKU , NOZOE MARI , TOYAMA HIROSHI , IWABUCHI HIROKO , IIZUKA MASAMI
IPC分类号： H01L21/66 , H01J37/05 , H01J37/147 , H01J37/244 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To conduct high-precision and rapid inspection of a semiconductor in a desired contrast by efficiently and rapidly detecting secondary electrons, reflected electrons or both of them generated from a substrate, in a method for inspecting a defect, a foreign substance, a residue and the like of the same design pattern of a semiconductor device by using an electron beam.
SOLUTION: A detector for detecting electrons generated from a surface of the substrate is composed of divided detection elements, desired control according to a sample state is executed to orbits of the electrons, and a calculation process of an obtained output signal of each element is carried out.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过有效和快速地检测从基板产生的二次电子，反射电子或它们二者在所需对比度中进行高精度和快速检查，在用于检查缺陷的方法中，通过使用电子束的半导体器件的相同设计图案的异物，残留物等。解决方案：用于检测从衬底的表面产生的电子的检测器由分割的检测元件组成，根据样品状态的期望控制被执行到电子的轨道，并且所获得的输出信号的计算处理元素被执行。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005251754A Inspecting method and inspecting device of semiconductor device 审中-公开
标题翻译：半导体器件的检查方法和检查器件
公开(公告)号：JP2005251754A
公开(公告)日：2005-09-15
申请号：JP2005105597
申请日：2005-04-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NOZOE MARI , SHINADA HIROYUKI , KURODA KATSUHIRO
IPC分类号： H01L21/66 , H01J37/22 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To improve the reliability of defect detection sensitivity and an inspection result by removing the noise of a high frequency component resulting from detailed unevenness produced in the case of processing a semiconductor device circuit pattern.
SOLUTION: An offset is applied to a focal position on a semiconductor device 28 by changing the diameter of an electron beam irradiated to the semiconductor device 28 by the operation of an objective lens 11, or regulating the height of the objective lens 11 or a test piece 14 in response to the unevenness generated in the case of processing the semiconductor device. Moreover, the pixel size is changed according to the unevenness of the semiconductor device processing surface at an image processing time in an image processing arithmetic unit 24.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过消除由于在处理半导体器件电路图案的情况下产生的详细不均匀而导致的高频分量的噪声，从而提高缺陷检测灵敏度的可靠性和检查结果。解决方案：通过改变通过物镜11的操作照射到半导体器件28的电子束的直径或调节物镜11的高度，将偏移施加到半导体器件28上的焦点位置或测试片14，以响应在处理半导体器件的情况下产生的不均匀性。此外，像素尺寸根据图像处理运算单元24中的图像处理时间的半导体器件处理表面的不均匀性而改变。（C）2005，JPO和NCIPI

10. 发明专利

JP2004335484A Inspection method and inspection apparatus using electron beam 审中-公开
公开(公告)号：JP2004335484A
公开(公告)日：2004-11-25
申请号：JP2004218052
申请日：2004-07-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IWABUCHI HIROKO , TODOKORO HIDEO , MORI HIROYOSHI , SATO MITSUGI , USAMI YASUTSUGU , ICHIHASHI MIKIO , FUKUHARA SATORU , SHINADA HIROYUKI , KANEKO YUTAKA , TAKATO ATSUKO , TOOYAMA HIROSHI , SUGIYAMA KATSUYA
IPC分类号： G01N23/225 , H01J37/22 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection method and an inspection apparatus using an electron beam achieving a higher resolution, higher speed and reliability, and a smaller size. SOLUTION: A voltage is applied to a sample via a sample stage. An electron beam is converged on the sample, and the sample is scanned. The sample stage is continuously moved during scanning, and charged particles generated from the sample are detected to thereby detect a defect of the sample, wherein a distance between the sample stage and a shield frame is determined on the basis of a limit of discharge occurring between the sample stage and the shield frame. There is provided a coil of at least six poles for correcting the shape of the electron beam. The electron beam is deflected for blanking during movement of the sample, with the crossover of the electron beam taken as a fulcrum of blanking. The magnitude of the voltage applied to the sample is determined according to the kind of the sample. COPYRIGHT: (C)2005,JPO&NCIPI

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