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1. 发明专利

JPH0936108A METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR, SEMICONDUCTOR WAFER AND SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH0936108A
公开(公告)日：1997-02-07
申请号：JP18591795
申请日：1995-07-21
申请人： HITACHI LTD
发明人： TSUTSUMI YOSHITSUGU , OKAMOTO YOSHIO , WATANABE KAZUNORI , KASAHARA OSAMU
IPC分类号： H01L21/285 , H01L21/205 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To improve the evaporating efficiency of liquid material, to prevent the formation of an unnecessary film in a device and to improve the productivity of a semiconductor device. SOLUTION: The liquid material 27 in a liquid material tank 25 is pressure- fed into a liquid material tank 25 by liquid material delivering gas, the liquid material 27 is fed to an evaporation nozzle 21, and carrier gas (inert gas) and gaseous material are fed to a vaporizing nozzle 21 from a gas feeding part 8. The liquid material 27 sent from the gas nozzle 21 comes into collision with the carrier gas and the gaseous material, it is brought into the state of particulates, vaporized efficiently, fed to the surface of the wafer 4 on the susceptor 3 which is heated by a heater 31, and a thin film is formed.

2. 发明专利

JPH097969A METHOD OF FILLING FINE HOLE WITH METAL 失效
公开(公告)号：JPH097969A
公开(公告)日：1997-01-10
申请号：JP18307696
申请日：1996-07-12
申请人： HITACHI LTD
发明人： NISHITANI EISUKE , TSUJIKU SUSUMU , ISHINO MASAKAZU , KOBAYASHI HIDE , KASAHARA OSAMU , TAMARU TAKESHI , NEZU HIROKI
IPC分类号： C23C16/02 , C23C16/04 , C23C16/06 , H01L21/28 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a method of filling a fine hole with a selective CVD representative of a W selection CVD wherein selectivity is not lowered even if there is performed a processing of purifying the base of the fine hole. SOLUTION: In a method of filling a fine hole with metal, the hole being provided in an insulating film on the substrate for exposing part of a substrate base, a fine hole bottom base surface is cleaned, and an insulating film surface layer part activated by a cleaning process is stabilized for selective CVD of metal.

3. 发明专利

JPH08250683A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH08250683A
公开(公告)日：1996-09-27
申请号：JP6407796
申请日：1996-03-21
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： SUGIURA JUN , TSUCHIYA OSAMU , OGASAWARA MAKOTO , OTSUKA FUMIO , TORII KAZUNARI , ASANO ISAMU , OWADA NOBUO , HORIUCHI MITSUAKI , TAMARU TAKESHI , AOKI HIDEO , OTSUKA NOBUHIRO , SHIRAI SEIICHIRO , SAGAWA MASAKAZU , IKEDA YOSHIHIRO , KAGA TORU , TSUNEOKA MASATOSHI , NIINA TOMOJI , OGISHI HIDEJI , KASAHARA OSAMU , ENAMI HIROMITSU , WAKAHARA ATSUSHI , AKIMORI HIROYUKI , SUZUKI SHINICHI , FUNATSU YOSHIAKI , KAWASAKI YOSHINAO , TSUBONE TSUNEHIKO , KOGANO MASAYOSHI , TSUGANE MASARU
IPC分类号： H01L23/522 , H01L21/768 , H01L21/8238 , H01L21/8242 , H01L27/092 , H01L27/108 , H01L29/78
摘要： PURPOSE: To improve an adhesion property between a base insulating film and a wiring, and improve processing accuracy of the wiring and a transition metal film underlying the wiring by forming a second metal film formed by a CVD process on a first metal film formed by a sputtering process. CONSTITUTION: This device comprises a plurality of wirings 55 consisting of an insulating film (base insulating film) 53 formed on a principal surface of a semiconductor substrate 20 and a metal film (transition metal film) 54 formed on the base insulating film 53. The transition metal film 54 includes a first metal film formed by a sputtering process and a second metal film formed by a CVD process. The second metal film is formed on the first metal film. The first metal film has its thickness thinner than that of the second metal film. The first and second metal films comprise the same material. Hereby, the transition metal film 54 deposited by a sputtering process has a higher adhesion property with each of the base insulating film 53 and the wiring 55 so that an adhesion property between the base insulating film 53 and the wiring 55 can be improved.

4. 发明专利

JPH07111253A SILICIDE FORMING METHOD AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07111253A
公开(公告)日：1995-04-25
申请号：JP3945794
申请日：1994-03-10
申请人： HITACHI LTD
发明人： SUWA TAKESHI , KASAHARA OSAMU
IPC分类号： H01L21/285 , H01L21/205 , H01L21/28
摘要： PURPOSE:To form a tungsten silicide film having a uniform composition on a polycrystalline silicon film by a method wherein initial nuclei are formed while the pressure in a reaction chamber is set to a relatively high value and the surface of a formed film is kept clean and a film is formed while the pressure in the reaction chamber is set to a relatively low value. CONSTITUTION:After the heating of a wafer 12 is finished, the pressure in a reaction chamber 11 is set to 950mTorr and a required quantity of SiH2Cl2 gas which is one of reactive gases is supplied into the reaction chamber 11 and then a required quantity of WF6 gas which is the other reactive gas is supplied to form initial nuclei. After that, a very thin film 6 is formed. Then the supply of the gases is stopped and the reaction chamber 11 is evacuated and the surface of the very thin film 6 is cleaned. Then a pressure in the reaction chamber 11 is reset to a normal value of 150mTorr and the SiH2Cl2 gas which is one of the reactive gases is supplied into the reaction chamber 11 and, after an elapse of time for stabilizing conditions in the reaction chamber 11, the WF6 gas which is another reactive gas is supplied. As a result, a WSi2 film 3 having a uniform composition can be formed on a polycrystalline silicon film 1.

5. 发明专利

JPH06177049A VAPOR GROWTH DEVICE 失效
公开(公告)号：JPH06177049A
公开(公告)日：1994-06-24
申请号：JP32913892
申请日：1992-12-09
申请人： HITACHI LTD
发明人： WATANABE KAZUNORI , MISE NOBUYUKI , KASAHARA OSAMU , UDO TSUTOMU
IPC分类号： C23C14/50 , H01L21/205 , H01L21/31 , H01L21/68
摘要： PURPOSE:To obtain a uniform film thickness within a wafer surface by providing a means for controlling the distance between a wafer and a wall in response to the shape of the wafer in a vapor growth device for forming film by guiding a reaction gas into a reaction pipe. CONSTITUTION:A number of wafers 32 are laminated inside a reaction pipe 31 with a constant wafer spacing by a wafer retention rod 33. A heater 34 is located outside reaction pipe 31 and the temperature of the wafer 32 is maintained to be constant by heating the inside of the reaction pipe 31. A cover pipe 35 is located between the wafers 32 and the reaction pipe 31. A mating part 37 which becomes nearly parallel to an orientation flat 36 of a wafer 33 is provided at the cover pipe 35, thus maintaining the distance between the wafer 32 and the cover pipe 35 to be nearly constant and making uniform the film quality as well as the distribution of the film thickness by taking the same structure as that of the cover pipe 35 for example by drilling. In this manner, the film thickness uniformity within the wafer surface can be increased.

6. 发明专利

JPH0615713B2 失效
公开(公告)号：JPH0615713B2
公开(公告)日：1994-03-02
申请号：JP23835584
申请日：1984-11-14
申请人： HITACHI LTD
发明人： SAKATA MASAO , KOBAYASHI HIDE , ABE KATSUO , SHIMAMURA HIDEAKI , KASAHARA OSAMU , OOGISHI HIDEJI
IPC分类号： C23C14/36 , C23C14/34 , C23C14/54 , H01L21/203 , H01L21/285

7. 发明专利

JPH04329630A VERTICAL DIFFUSION-CVD APPARATUS WITH LOAD LOCK 失效
公开(公告)号：JPH04329630A
公开(公告)日：1992-11-18
申请号：JP13039091
申请日：1991-05-01
申请人： KOKUSAI ELECTRIC CO LTD , HITACHI LTD
发明人： TANABE MIKIO , IKEDA FUMIHIDE , NAKAMURA SHUICHI , KASAHARA OSAMU
IPC分类号： H01L21/205 , H01L21/22 , H01L21/285 , H01L21/31 , H01L21/677 , H01L21/68
摘要： PURPOSE:To minimize formation of a natural oxide film by making the whole apparatus light-weighted and low-cost in a thin plate structure of a load lock chamber. CONSTITUTION:A boat 3 in a load lock chamber 5 which has a transfer mechanism 4 transferring wafers between a cassette 1 in an airtight cassette chamber 2 capable of vacuum N2 gas replacement between the boat 3 and which can replace air by a high purity N2 gas is carried into and out of a reaction chamber 6.

8. 发明专利

JPH0346346A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH0346346A
公开(公告)日：1991-02-27
申请号：JP18226589
申请日：1989-07-14
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： NISHIZAWA HIROTAKA , MIYAMA MASANORI , AZUMA SEIICHIRO , KASAHARA OSAMU , SUZUKI SHINICHI
IPC分类号： H01L29/73 , H01L21/331 , H01L21/76
摘要： PURPOSE:To realize a fine size and a high integration of a semiconductor integrated circuit by a method wherein individual elements of the integrated circuit are isolated by using a U-shaped groove whose groove width is 0.5mum or lower and an insulator is filled into the U-shaped groove. CONSTITUTION:Individual elements are isolated by a U-shaped groove (submicron U-shaped groove) 8 whose groove width is 0.5mum or lower; an insulator is filled into the U-shaped groove. Thereby, the groove width of the U-shaped groove is sufficiently narrow and the insulator can easily be filled; as a result, an isolation structure whose permittivity is low can be formed, and a fine size and a high integration can be realized. In addition, the insulator inside the U-shaped groove can be used as a CVD insulating film; a hollow which is produced on the U-shaped groove in this case is so small as to be negligible and a flattened structure can be achieved.

9. 发明专利

JPH02246150A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, ITS FORMATION AND APPARATUS FOR PRODUCING IT 失效
公开(公告)号：JPH02246150A
公开(公告)日：1990-10-01
申请号：JP6584889
申请日：1989-03-20
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： MURATA JUN , TADAKI YOSHITAKA , KANEKO HIROKO , SEKIGUCHI TOSHIHIRO , UCHIYAMA HIROYUKI , NAKAMURA TAKASHI , MAEDA TOSHIO , KASAHARA OSAMU , ENAMI HIROMITSU , OGISHIMA JUNJI , NAGAO MAKI , FUNAHASHI TOMOMASA , KIGUCHI YASUO , KOJIMA MASAYUKI , KOIKE ATSUYOSHI , MIYAZAWA HIROYUKI , SADAOKA MASATO , KADOTA KAZUYA , CHIGAWARA TADASHI , NOJIRI KAZUO , KOBAYASHI YUTAKA
IPC分类号： H01L27/04 , H01L21/027 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To increase a charge storage amount of a capacity element, for information storage use, of a stacked structure and to enhance an alpha-ray soft-error breakdown strength and an integration density of a DRAM by a method wherein a correction pattern which increases a surface area of a lower-layer electrode layer is formed on the lower-layer electrode structure of the capacity element, for information storage use, of the stacked structure of a memory cell of the DRAM. CONSTITUTION:A capacity element C, for information storage use, of a memory cell M is constituted in such a way that a lower-layer electrode layer 33, a dielectric film 34 and an upper-layer electrode layer 35 are laminated one after another. The capacity element C for information storage use is constituted in a so-called stacked structure. In the lower-layer electrode layer 33, a correction pattern 33A protruding in a plane direction from a region formed in a plane square shape is formed on the connection side of an n-type semiconductor region 28 and a complementary data line 50. A size of an etching mask used to process the lower-layer electrode layer 33 is reduced by reflected light; accordingly, a size of the lower-layer electrode layer 33 is made smaller than a preset value. Then, the correction pattern 33A is constituted in such a way that the size of the lower-layer electrode layer 33 is made large in anticipation of a reduced portion of the size.

10. 发明专利

JPH01283850A MANUFACTURE OF INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH01283850A
公开(公告)日：1989-11-15
申请号：JP11442188
申请日：1988-05-10
申请人： HITACHI LTD
发明人： HORIUCHI MITSUAKI , KASAHARA OSAMU
IPC分类号： H01L21/768
摘要： PURPOSE:To make it into one which has fine through hole construction in which contact resistance is small by forming a through hole wiring part by the gas phase growth of metal using halide after laying a conductive material on an aluminum wiring layer below the through hole. CONSTITUTION:After laying a conductive material layer 9 made mainly of metal capable of becoming halide with high steam pressure on an aluminum wiring layer 3 below a through hole 6, a through hole wiring part 7 is formed by the vapor growth of wiring material 71 using halide. Accordingly, increase of the contact resistance, which is caused by fluoride existing below the through hole wiring 7, can be checked surely and flattening of the through hole wiring can also be secured. Hereby, it can obtain one, in superior reproducibility, which has fine through hole construction with small contact resistance.

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