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1. 发明专利

JPH04329630A VERTICAL DIFFUSION-CVD APPARATUS WITH LOAD LOCK 失效
公开(公告)号：JPH04329630A
公开(公告)日：1992-11-18
申请号：JP13039091
申请日：1991-05-01
申请人： KOKUSAI ELECTRIC CO LTD , HITACHI LTD
发明人： TANABE MIKIO , IKEDA FUMIHIDE , NAKAMURA SHUICHI , KASAHARA OSAMU
IPC分类号： H01L21/205 , H01L21/22 , H01L21/285 , H01L21/31 , H01L21/677 , H01L21/68
摘要： PURPOSE:To minimize formation of a natural oxide film by making the whole apparatus light-weighted and low-cost in a thin plate structure of a load lock chamber. CONSTITUTION:A boat 3 in a load lock chamber 5 which has a transfer mechanism 4 transferring wafers between a cassette 1 in an airtight cassette chamber 2 capable of vacuum N2 gas replacement between the boat 3 and which can replace air by a high purity N2 gas is carried into and out of a reaction chamber 6.

2. 发明专利

JPH09275099A THIN FILM FORMING APPARATUS AND MANUFACTURE OF SEMICONDUCTOR DEVICE USING IT 失效
公开(公告)号：JPH09275099A
公开(公告)日：1997-10-21
申请号：JP7990196
申请日：1996-04-02
申请人： HITACHI LTD , KOKUSAI ELECTRIC CO LTD
发明人： OKAWA AKIRA , KASAHARA OSAMU , TERASAKI TADASHI
IPC分类号： C30B25/08 , C23C16/44 , C30B29/06 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a film forming apparatus such as a CVD device, etc., which can reduce production of foreign matter such as a reaction by product, etc., adhering to the inside of a reaction tube, and besides can easily clean the foreign matter, and the manufacture of a semiconductor device using it. SOLUTION: This is a CVD device which is equipped with a double structure of reactive tube which has an outer tube 1 as a first reactive tube and an inner tube 2 as a second reactive tube installed inside the outer tube 1, and in which a film such as a silicon nitride film, etc., is made on the wafer 7 installed inside the inner tube 2. This has such structure that reaction gas 9 passes the inner tube 2 and accumulates a film on the wafer 7, and then, a reaction gas 16 is exhausted from between the inner tube 2 and the outer tube 1.

3. 发明专利

JPH0917732A MANUFACTURE OF SEMICONDUCTOR AND EQUIPMENT 失效
公开(公告)号：JPH0917732A
公开(公告)日：1997-01-17
申请号：JP16025195
申请日：1995-06-27
申请人： HITACHI LTD , KOKUSAI ELECTRIC CO LTD
发明人： OKAWA AKIRA , TERASAKI TADASHI , KASAHARA OSAMU , ANDO TOSHIO
IPC分类号： C23C16/44 , C23C16/455 , H01L21/02 , H01L21/205
摘要： PURPOSE: To enhance the yield of semiconductor wafer and the operation rate for semiconductor manufacturing equipment by discharging air to a vacuum state from a container, passing a process gas to a porous member provided at a gas introducing portion, introducing the gas inside a cylindrical member, and treating an article within the cylindrical member. CONSTITUTION: Air is discharged to a vacuum state from a vacuum treatment chamber 2b by a vacuum air discharge pump 7 to a predetermined pressure. Thereafter, a process gas is introduced to a gas introducing portion 5a communicating with an outer pipe member 3 of a vacuum treatment container 2. Here, a process gas or inert gas is passed to a plurality of porous members 6 provided at a gas introducing portion 5a. Thereafter, a predetermined amount of heated and filtered gas is introduced inside a cylindrical member 3 and an inner piper member 4. Here, a vacuum treatment container 2 is heated by second heating means 13 such as a resistance heater, and the vacuum treatment chamber 2b is set to a predetermined temperature and a semiconductor wafer 1 is heated.

4. 发明专利

JPH10144613A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH10144613A
公开(公告)日：1998-05-29
申请号：JP30285496
申请日：1996-11-14
申请人： KOKUSAI ELECTRIC CO LTD
发明人： NOMURA HISASHI , KASAHARA OSAMU , ITAYA HIDEJI , TAKANO SATOSHI , SAKAI MASANORI
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To minimize the internal volume of gas exhaust tubes by a method wherein a reaction tube has a space part in which a treatment object substrate is placed and treated in its center, has two gas introducing tubes through which reactive gas is introduced and, further, has two gas exhaust tubes and valves are provided at positions closest to the reaction tube in the gas exhaust tubes. SOLUTION: A space part in which a treatment object substrate 2 is placed is formed in the center part of a reaction tube 1 which has a flat space. A heater 7 is provided around the reaction tube 1 to heat the inside of the reaction tube 1. Further, exhaust part flanges 6 are provided on both end parts of the reaction tube 1 and two gas introducing tubes 3 through which reactive gas is introduced are attached to the respective exhaust part flanges 6 and, further, two gas exhaust tubes 4 through which the reactive gas after the treatment of the substrate is exhausted are attached to the respective exhaust part flanges 6. Valves 13 and 14 are provided in the piping systems of the respective gas exhaust tubes 4. With this constitution, the backward diffusion of foreign substances through the respective gas exhaust tubes 4 can be suppressed and the foreign substances can be reduced and contamination can be avoided.

5. 发明专利

JPH0394070A CVD DEVICE 失效
公开(公告)号：JPH0394070A
公开(公告)日：1991-04-18
申请号：JP22984489
申请日：1989-09-05
申请人： KOKUSAI ELECTRIC CO LTD
发明人： ISHIZU HIDEO , IKEDA FUMIHIDE , NAKAMURA SHUICHI , KOBAYASHI HIDEO , KASAHARA OSAMU
IPC分类号： C23C16/44 , C23C16/54 , H01L21/205 , H01L21/285 , H01L21/31
摘要： PURPOSE:To prevent the oxidation after CVD and contamination with dust by providing a gate valve between a load-locking chamber and a load-locking spare chamber and conveying a wafer from a cassette into a reaction chamber in an airtight vessel. CONSTITUTION:A gate valve 13 provided between the load-locking chamber 12 and the load-locking spare chamber 14 is closed, and the vertical reaction chamber 1 and the load-locking chamber 12 connected to the lower part of the chamber 1 are airtightly closed. A cassette changed with a wafer 23 is placed on the cassette receiver 19 of a cassette elevator 18. The spare chamber 14 and a cassette chamber 15 are then evacuated. The valve 13 is opened, and the water 23 is transferred to an elevator mechanism 5 by a wafer transfer machine 16. The valve 13 is then closed, the reaction chamber 1 and the load- locking chamber 12 are supplied with a gaseous reactant, and CVD is applied.

6. 发明专利

JPH0397222A SHEET TYPE CVD EQUIPMENT 失效
公开(公告)号：JPH0397222A
公开(公告)日：1991-04-23
申请号：JP23641889
申请日：1989-09-11
申请人： KOKUSAI ELECTRIC CO LTD
发明人： IKEDA FUMIHIDE , NAKAMURA SHUICHI , KOBAYASHI HIDEO , KASAHARA OSAMU
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To prevent a wafer from being contaminated by a heater, and enable heating at a high temperature up to about 1200 deg.C, by installing a heater cover in a reaction chamber, arranging therein a spiral type heater, mounting thereon a susceptor, and indirectly heating the wafer. CONSTITUTION:A heater cover 2 is installed in a reaction chamber 1; a spiral type heater 3 is arranged in the heater cover 2; a susceptor 5 for indirectly heating a wafer 4 is mounted on the heater cover 2. After the inside of the reaction chamber 1 and the inside of the heater cover 2 are vacuumized with independent vaccumizing systems, reaction gas is introduced into the reaction chamber 1 from a reaction gas feeding inlet 11, and discharged from an exhaust vent 12. Inert gas is introduced from a gas feeding route 6, and made to flow through an inert gas flowing route 7 between the heater cover 2 and the susceptor 5. At the same time, from electrodes 14, electric power is supplied to three zones, i.e., the inside, the center part, and the outside of the heater 3, and each zone of the heater 3 is heated. Hence the susceptor 5 is heated, the wafer 4 is heated, and a CVD film is produced on the wafer 4.

7. 发明专利

JPH0936108A METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR, SEMICONDUCTOR WAFER AND SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH0936108A
公开(公告)日：1997-02-07
申请号：JP18591795
申请日：1995-07-21
申请人： HITACHI LTD
发明人： TSUTSUMI YOSHITSUGU , OKAMOTO YOSHIO , WATANABE KAZUNORI , KASAHARA OSAMU
IPC分类号： H01L21/285 , H01L21/205 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To improve the evaporating efficiency of liquid material, to prevent the formation of an unnecessary film in a device and to improve the productivity of a semiconductor device. SOLUTION: The liquid material 27 in a liquid material tank 25 is pressure- fed into a liquid material tank 25 by liquid material delivering gas, the liquid material 27 is fed to an evaporation nozzle 21, and carrier gas (inert gas) and gaseous material are fed to a vaporizing nozzle 21 from a gas feeding part 8. The liquid material 27 sent from the gas nozzle 21 comes into collision with the carrier gas and the gaseous material, it is brought into the state of particulates, vaporized efficiently, fed to the surface of the wafer 4 on the susceptor 3 which is heated by a heater 31, and a thin film is formed.

8. 发明专利

JPH097969A METHOD OF FILLING FINE HOLE WITH METAL 失效
公开(公告)号：JPH097969A
公开(公告)日：1997-01-10
申请号：JP18307696
申请日：1996-07-12
申请人： HITACHI LTD
发明人： NISHITANI EISUKE , TSUJIKU SUSUMU , ISHINO MASAKAZU , KOBAYASHI HIDE , KASAHARA OSAMU , TAMARU TAKESHI , NEZU HIROKI
IPC分类号： C23C16/02 , C23C16/04 , C23C16/06 , H01L21/28 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a method of filling a fine hole with a selective CVD representative of a W selection CVD wherein selectivity is not lowered even if there is performed a processing of purifying the base of the fine hole. SOLUTION: In a method of filling a fine hole with metal, the hole being provided in an insulating film on the substrate for exposing part of a substrate base, a fine hole bottom base surface is cleaned, and an insulating film surface layer part activated by a cleaning process is stabilized for selective CVD of metal.

9. 发明专利

JPH08250683A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH08250683A
公开(公告)日：1996-09-27
申请号：JP6407796
申请日：1996-03-21
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： SUGIURA JUN , TSUCHIYA OSAMU , OGASAWARA MAKOTO , OTSUKA FUMIO , TORII KAZUNARI , ASANO ISAMU , OWADA NOBUO , HORIUCHI MITSUAKI , TAMARU TAKESHI , AOKI HIDEO , OTSUKA NOBUHIRO , SHIRAI SEIICHIRO , SAGAWA MASAKAZU , IKEDA YOSHIHIRO , KAGA TORU , TSUNEOKA MASATOSHI , NIINA TOMOJI , OGISHI HIDEJI , KASAHARA OSAMU , ENAMI HIROMITSU , WAKAHARA ATSUSHI , AKIMORI HIROYUKI , SUZUKI SHINICHI , FUNATSU YOSHIAKI , KAWASAKI YOSHINAO , TSUBONE TSUNEHIKO , KOGANO MASAYOSHI , TSUGANE MASARU
IPC分类号： H01L23/522 , H01L21/768 , H01L21/8238 , H01L21/8242 , H01L27/092 , H01L27/108 , H01L29/78
摘要： PURPOSE: To improve an adhesion property between a base insulating film and a wiring, and improve processing accuracy of the wiring and a transition metal film underlying the wiring by forming a second metal film formed by a CVD process on a first metal film formed by a sputtering process. CONSTITUTION: This device comprises a plurality of wirings 55 consisting of an insulating film (base insulating film) 53 formed on a principal surface of a semiconductor substrate 20 and a metal film (transition metal film) 54 formed on the base insulating film 53. The transition metal film 54 includes a first metal film formed by a sputtering process and a second metal film formed by a CVD process. The second metal film is formed on the first metal film. The first metal film has its thickness thinner than that of the second metal film. The first and second metal films comprise the same material. Hereby, the transition metal film 54 deposited by a sputtering process has a higher adhesion property with each of the base insulating film 53 and the wiring 55 so that an adhesion property between the base insulating film 53 and the wiring 55 can be improved.

10. 发明专利

JPH07111253A SILICIDE FORMING METHOD AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07111253A
公开(公告)日：1995-04-25
申请号：JP3945794
申请日：1994-03-10
申请人： HITACHI LTD
发明人： SUWA TAKESHI , KASAHARA OSAMU
IPC分类号： H01L21/285 , H01L21/205 , H01L21/28
摘要： PURPOSE:To form a tungsten silicide film having a uniform composition on a polycrystalline silicon film by a method wherein initial nuclei are formed while the pressure in a reaction chamber is set to a relatively high value and the surface of a formed film is kept clean and a film is formed while the pressure in the reaction chamber is set to a relatively low value. CONSTITUTION:After the heating of a wafer 12 is finished, the pressure in a reaction chamber 11 is set to 950mTorr and a required quantity of SiH2Cl2 gas which is one of reactive gases is supplied into the reaction chamber 11 and then a required quantity of WF6 gas which is the other reactive gas is supplied to form initial nuclei. After that, a very thin film 6 is formed. Then the supply of the gases is stopped and the reaction chamber 11 is evacuated and the surface of the very thin film 6 is cleaned. Then a pressure in the reaction chamber 11 is reset to a normal value of 150mTorr and the SiH2Cl2 gas which is one of the reactive gases is supplied into the reaction chamber 11 and, after an elapse of time for stabilizing conditions in the reaction chamber 11, the WF6 gas which is another reactive gas is supplied. As a result, a WSi2 film 3 having a uniform composition can be formed on a polycrystalline silicon film 1.

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