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1. 发明专利

JPH10247613A SUBSTRATE WITH IDENTIFICATION PATTERN, AND METHOD AND DEVICE FOR READING IDENTIFICATION PATTERN 失效
公开(公告)号：JPH10247613A
公开(公告)日：1998-09-14
申请号：JP6530497
申请日：1997-03-04
申请人： HITACHI LTD
发明人： SHIMAMURA HIDEAKI , IWATA HISAFUMI , OKABE TAKASHI
IPC分类号： H01L23/00 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To make it possible to read an identification pattern irrespective of its background. SOLUTION: An ID pattern 6 to be formed in advance on the first main surface 2 of a wafer 1 is composed of a number of segment 7 which are the pattern parts smaller than the ID pattern 6. The ID pattern 6 is read out by obliquely projecting infrared rays R, which penetrate the wafer 1, from the second main surface side of the wafer 1 and by detecting the scattered light R in segment 7 of the infrared rays R. As above-mentioned, by reading the ID pattern from the second main surface side of the wafer without having the affection of the background, the ID pattern can be read out without being subjected to the affection of the thin film, which is formed successively on the first main surface side of the wafer, with the progress of a semiconductor process. As a result, the ID pattern can be read out accurately in any semiconductor process.

2. 发明专利

JPH08222182A MASS SPECTROGRAPH 失效
公开(公告)号：JPH08222182A
公开(公告)日：1996-08-30
申请号：JP2262095
申请日：1995-02-10
申请人： HITACHI LTD
发明人： KISHIMOTO SATOSHI , YAJIMA AKIRA , NISHITANI EISUKE , SHIMAMURA HIDEAKI , KOBAYASHI HIDE , UCHIDA NORIHIRO
IPC分类号： G01N27/62 , B01L1/00 , C04B28/08 , C23C14/00 , C23C16/44 , H01J49/26 , H01L21/203 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To provide a mass spectrograph capable of invariably conducting the residual gas partial pressure analysis with a single structure via a simple action at the time of a high evacuation before and after vacuum processing and at the time of a low evacuation during vacuum processing. CONSTITUTION: A chassis 1 connected to a vacuum processor 2 is divided into one chassis 1 connected to the vacuum processor 2 and the other relatively movable chassis 1' kept airtight with one chassis 1, and a gas guide pipe is provided on one chassis 1 connected to the vacuum processor 2. An ionization mechanism section and an analysis section are fixed to the other chassis 1', and the gas guide pipe is removably connected to the ionization mechanism section fixed to the other chassis 1' so that the flow of the ionized residual gas between the ionization mechanism section and the analysis section can be limited.

3. 发明专利

JPH0895229A PHOTOMASK FOR EXPOSURE DEVICE AND ITS PATTERN PLOTTER 失效
公开(公告)号：JPH0895229A
公开(公告)日：1996-04-12
申请号：JP22806994
申请日：1994-09-22
申请人： HITACHI LTD
发明人： NAKAYAMA YASUHIKO , KOBAYASHI HIDE , SHIMAMURA HIDEAKI , OSHIDA YOSHITADA
IPC分类号： G03F1/68 , H01L21/027 , G03F1/08
摘要： PURPOSE: To suppress the curvature of field and image distortions on the imag ing planes of the projecting lenses of reduction steppers and to absorb the difference from one stepper to another by forming the pattern previously distorting the shape and pattern of a photomask. CONSTITUTION: The metallic pattern 3 of the photomask 1 for correcting distortions are plotted with distortion in some places in such a manner that the image distortions of the projecting lenses using the photomask 1 are offset on a wafer at the time the pattern is plotted by a reticle plotter. For example, the photomask is provided with a pattern 4 plotted in such a manner that the image distortion generated at the time of assembling the respective projecting lenses in the stepper offset on the wafer by the pattern shape (distortion correcting patterns) plotted to offset the image distortion intrinsic to the projecting lenses on the wafer. On the other hand, the surface shape of a photomask 2 is so worked as to form an aspherical surface that the curvature of image intrinsic to the projecting lenses and the curvature of image field generated at the time of assembling the respective projecting lenses are offset on the wafer.

4. 发明专利

JPH07283091A METHOD AND SYSTEM FOR PROCESSING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH07283091A
公开(公告)日：1995-10-27
申请号：JP7105194
申请日：1994-04-08
申请人： HITACHI LTD
发明人： KOBAYASHI HIDE , NISHITANI EISUKE , SUZUKI MIWAKO , UCHIDA NORIHIRO , CHIBA NATSUYO , SHIMAMURA HIDEAKI
IPC分类号： G02B6/00 , H01L21/02 , H01L21/26
摘要： PURPOSE:To suppress unnecessary heating or waste heat of a processing system as low as possible by installing a light source generating the heating energy at a place of different atmosphere from a clean room, i.e., at the underfloor of the clean room. CONSTITUTION:Light emitted from a heating lamp 310 is condensed through a condensing system, comprising a reflector and a lens, into a beam having area smaller than that of the diameter of core of an optical fiber 130 before entering into the optical fiber. The condensed light for heating a substrate is transmitted through the optical fiber 130 to a processing system 100 including a thermal processing process installed in a clean room 200 in order to heat a substrate set in the processing system 100. This constitution suppresses unnecessary heating in the system or waste heat therefrom as low as possible.

5. 发明专利

JPH04155847A SUBSTRATE TEMPERATURE CONTROL MEANS IN VACUUM TREATER 失效
公开(公告)号：JPH04155847A
公开(公告)日：1992-05-28
申请号：JP27896690
申请日：1990-10-19
申请人： HITACHI LTD
发明人： KOBAYASHI HIDE , OKAMOTO AKIRA , SHIMAMURA HIDEAKI , YONEOKA YUJI
IPC分类号： G01J5/00 , H01L21/31 , H01L21/66 , H01L33/34
摘要： PURPOSE:To introduce gas in a space, which is made by the rear of a substrate and a heat block, and to make it possible to detect an actual temperature in the result of heating of the substrate by a method wherein a hole for observation use for observing the substrate rear by an infrared temperature indicator is provided in a base stage to be placed with the substrate and a vacuum treater is provided with a shutter for movable system optical path closing use for blocking the hole for observation use. CONSTITUTION:A small window B provided in a heat lock 1 is provided for making an optical path 6 pass through the block 1 so that infrared radiant light from the rear of a substrate 4 placed on the block 1 can be observed by an infrared (radiation) temperature indicator 5. The window 3 is hermetically sealed with cap 10. The cap 10 is supported by a crank-shaped drive shaft 11. The shaft 11 is vertically rotated. Ar gas, for example, is introduced in a space, which is made by the rear of the substrate 4 and the block 1. When the window 3 is blocked by the cap 10, a substrate temperature rises. The shaft 11 is made to descend and rotated after an elapse of a proper time, is removed from the path 6 and the rear of the substrate 4 is observed by the indicator 5.

6. 发明专利

JPH01258494A FORMATION OF CONDUCTIVE FILM 失效
公开(公告)号：JPH01258494A
公开(公告)日：1989-10-16
申请号：JP8504588
申请日：1988-04-08
申请人： HITACHI LTD
发明人： SAKATA MASAO , KOBAYASHI HIDE , SHIMAMURA HIDEAKI , FUJITA MASAHIRO , NAKAMURA HIROSHI
IPC分类号： H05K3/46
摘要： PURPOSE:To form a film excellent in a throwing power by a method wherein a negative periodic potential, whose pulse width is smaller than half a period and larger than one microsecond, is applied onto a substrate in a film forming process. CONSTITUTION:A sputtering electrode 108 and a substrate electrode 104 are provided inside a grounded vacuum vessel 101 filled with a sputtering gas facing each other. A negative high potential and a negative bias potential are applied onto the electrodes 108 and 104 respectively to form a required film on a substrate 102 on the electrode 104. In this process, a negative periodic bias potential, whose pulse width is smaller than half a period and larger than one microsecond, is applied onto the substrate 102 for a part of a film forming process or through the process. Two or more kinds of voltage waveforms of the bias potential applied on the substrate 102 are used in a single film forming process. By these processes, a film excellent in a throwing power can be formed.

7. 发明专利

JPH01195273A METHOD AND DEVICE FOR SPUTTERING 失效
公开(公告)号：JPH01195273A
公开(公告)日：1989-08-07
申请号：JP1704188
申请日：1988-01-29
申请人： HITACHI LTD
发明人： SHIMAMURA HIDEAKI , SAKATA MASAO , KOBAYASHI HIDE , YONEOKA YUJI , KAMEI TSUNEAKI
IPC分类号： H01L21/203 , C23C14/34 , C23C14/40 , H01L21/31
摘要： PURPOSE:To form a film with superior covering power to the substrate shape by repeating periodical increase and decrease in the high-frequency electric power to be impressed on a substrate so as to fluctuate the electric potential of D.C. component generated at the substrate and also specifying the cycle period time of the voltage waveform. CONSTITUTION:At the time of forming a film on a substrate 102 by a bias sputtering method, a high-frequency electric power source 120 for applying substrate bias potential to the substrate 102 is connected via a matching circuit 121 to a substrate electrode 104. Further, a voltage waveform generator 105 is connected to the high-frequency electric power source 120, and a computer 107 for controlling bias conditions is connected to the above voltage waveform generator 105. By the above constitution, the output power of the high-frequency electric power source 120 is fluctuated according to the periodical amplitude of the voltage waveform generated by the voltage waveform generator 105 and is then inputted to the substrate 102, by which the electric potential of the D.C. component generated at the substrate 102 is fluctuated. At this time, high-frequency electric power is applied to the substrate 102 so that the cycle period of the voltage waveform of the D.C. component is >=1musec, and also >=at least one kind among the periodical voltage waveforms can be modified in the course of a single film-forming process.

8. 发明专利

JPS62250171A FILM FORMING METHOD 失效
公开(公告)号：JPS62250171A
公开(公告)日：1987-10-31
申请号：JP9207086
申请日：1986-04-23
申请人： HITACHI LTD
发明人： SAKATA MASAO , SHIMAMURA HIDEAKI , KAWAHITO MICHIYOSHI , KOBAYASHI HIDE , KAMEI TSUNEAKI
IPC分类号： C23C14/34
摘要： PURPOSE:To form a film having the shape corresponding to an underlying shape of a substrate having through-holes on the substrate by disposing a parallel cross-shaped shielding plate between the substrate and target at the time of forming the film by sputtering on the substrate. CONSTITUTION:Sputtering particles are released in the form of the distribution of the law of cosines to all directions at the time of forming the film, by sputtering, of the material of a target 40 onto the substrate 10 having the through-holes 11 in a sputtering film forming device. An overhang shape is generated at the aperture end of the through-holes 11 particularly when vertical holes exist on the target 40 surface. The amt. of the film to be formed on the side wall 13 and bottom side 1 of the through-holes is then considerably decreased and defective states such as increased resistance value, and disconnection are resulted if the substrate 10 is a semiconductor. The parallel cross-shaped shielding plate 130 is disposed between the target 40 and the substrate 10 to control the quantity of the incident sputtering particles on the inside of the through-holes 11 in order to prevent such defects. The film having the shape conforming to the shape of the underlying substrate having the through-holes is thus formed.

9. 发明专利

JPS61117276A Target for sputtering 失效
标题翻译：喷射目标
公开(公告)号：JPS61117276A
公开(公告)日：1986-06-04
申请号：JP23835884
申请日：1984-11-14
申请人： Hitachi Ltd
发明人： SAKATA MASAO , KOBAYASHI HIDE , KAWAHITO MICHIYOSHI , SHIMAMURA HIDEAKI , ABE KATSUO , KAMEI TSUNEAKI
IPC分类号： C23C14/36 , C23C14/34 , H01L21/203 , H01L21/285
摘要： PURPOSE: To form a thin film faithful to an underlying shape on a substrate having fine through-holes in a magnetron type sputtering device by providing plural perforations to the surface of a target to be subjected to sputtering.
CONSTITUTION: The plural perforations are provided to the main plane of the target 200 in the magnetron type sputtering device consisting of the target 200, a permanent magnet 403 and an anode 402. Gaseous argon is introduced into the space of the target 200 and the substrate 401 to be formed thereon with the film and a high negative voltage is impressed on the target 200 to generate the glow discharge and to sputter the target 200, thereby forming the thin film on the substrate 401. The directivity of the incoming sputter particles is improved by the perforations provided on the target 200 and good film having no overhang shape is obtd.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过在待溅射的靶的表面上设置多个穿孔，在磁控溅射装置中形成具有细通孔的基板上的底层形状的薄膜。构成：在由靶200，永磁体403和阳极402构成的磁控溅射装置中，将多个穿孔提供给靶200的主平面。将气态氩引入到靶200的空间中，并且衬底 401，并且在靶200上施加高的负电压以产生辉光放电并溅射靶200，从而在衬底401上形成薄膜。提高溅射粒子的方向性通过设置在靶200上的穿孔和没有突出形状的良好膜。

10. 发明专利

JPS61117273A Sputtering device 失效
标题翻译：喷射装置
公开(公告)号：JPS61117273A
公开(公告)日：1986-06-04
申请号：JP23835484
申请日：1984-11-14
申请人： Hitachi Ltd
发明人： KOBAYASHI HIDE , KAWAHITO MICHIYOSHI , SAKATA MASAO , SHIMAMURA HIDEAKI , ABE KATSUO , KAMEI TSUNEAKI
IPC分类号： C23C14/36 , C23C14/34 , C23C14/35 , H01L21/203 , H01L21/285
摘要： PURPOSE: To execute satisfactorily step coverage of a step part by providing a slit between a moving and rotating substrate and a target which is provided with a projection in the peripheral part and is provided with electromagnets to change electric current.
CONSTITUTION: A wafer 2 which is preliminarily formed with the 1st wiring layer 3, an inter-layer insulating film 4 and through-holes 5 is so held by a substrate holder 17 that the wafer moves and rotates within the plane parallel with the film forming plane. The projection 14 having the same potential as the potential of the target 1 is provided to the peripheral part of the target 1 and the electromagnets 15 are provided to the target via a packing plate 16 to change the electric current. The slit 12 is installed between the wafer 2 and the target 1. The film is thus uniformly formed to the base part 11 of the through-holes 5 as well as the side face 7 and top surface 8 of the step part 6.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过在移动和旋转的基板之间设置狭缝和在周边部分中设置有突起的靶，并且设置有用于改变电流的电磁体，来执行步骤部分的令人满意的台阶覆盖。构成：预先形成有第一布线层3的晶片2，层间绝缘膜4和通孔5被基板保持件17保持，晶片在与成膜的平面平行的平面内移动并旋转飞机具有与目标1的电位相同的电位的突起14设置在目标1的周边部分，电磁铁15经由包装板16提供给靶，以改变电流。狭缝12安装在晶片2和靶材1之间。因此，该膜均匀地形成在通孔5的基部11以及台阶部6的侧面7和顶面8上。

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