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1. 发明专利

JPH07254635A SEMICONDUCTOR PRODUCING APPARATUS 失效
公开(公告)号：JPH07254635A
公开(公告)日：1995-10-03
申请号：JP4401894
申请日：1994-03-15
申请人： HITACHI LTD , KOKUSAI ELECTRIC CO LTD
发明人： SAKAI SATORU , NITTA TAKEHISA , TOMIOKA HIDEKI , SAITO YOSHIO , KASHU NOBUYOSHI , MIZUKAMI KOICHIRO , SHINKAWA SHUJI , IKEDA FUMIHIDE , TANABE MIKIO
IPC分类号： F16K27/06 , B05C15/00 , H01L21/205 , H01L21/22 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/324 , H01L21/677 , H01L21/68
摘要： PURPOSE:To provide an ON/OFF valve mechanism (gate valve, load lock mechanism) excellent in heat resistance and useful for reduction of size of semiconductor producing apparatus in which production of dust due to sliding is eliminated. CONSTITUTION:A valve 41 is moved along a similar plane while keeping a micro gap with respect to a valve cage 51 thus controlling the rotational position of the opening 42 of valve with respect to the openings 52, 53 of valve cage and turning the valve ON/OFF. The micro gap between the valve 41 and the valve cage 51 is provided with grooves 54, 55, 56, 57 for supplying and discharging a fluid while surrounding the openings 52, 53 of the valve cage in order to interrupt the atmosphere by means of the fluid thus forming a gate valve. Furthermore, a work (wafer 1) is placed in the region defined by the valve 41 and the valve cage 51 thus forming a load lock.

2. 发明专利

JPH04329630A VERTICAL DIFFUSION-CVD APPARATUS WITH LOAD LOCK 失效
公开(公告)号：JPH04329630A
公开(公告)日：1992-11-18
申请号：JP13039091
申请日：1991-05-01
申请人： KOKUSAI ELECTRIC CO LTD , HITACHI LTD
发明人： TANABE MIKIO , IKEDA FUMIHIDE , NAKAMURA SHUICHI , KASAHARA OSAMU
IPC分类号： H01L21/205 , H01L21/22 , H01L21/285 , H01L21/31 , H01L21/677 , H01L21/68
摘要： PURPOSE:To minimize formation of a natural oxide film by making the whole apparatus light-weighted and low-cost in a thin plate structure of a load lock chamber. CONSTITUTION:A boat 3 in a load lock chamber 5 which has a transfer mechanism 4 transferring wafers between a cassette 1 in an airtight cassette chamber 2 capable of vacuum N2 gas replacement between the boat 3 and which can replace air by a high purity N2 gas is carried into and out of a reaction chamber 6.

3. 发明专利

JPH0440227A ULTRAHIGH VACUUM APPARATUS 失效
公开(公告)号：JPH0440227A
公开(公告)日：1992-02-10
申请号：JP14628490
申请日：1990-06-06
申请人： HITACHI LTD , KOKUSAI ELECTRIC CO LTD
发明人： KIYOTA YUKIHIRO , TAMAOKI YOICHI , NAKAMURA TORU , UEDA SHINJIRO , TANABE MIKIO , NAKAMURA SHUICHI , SHINKAWA SHUJI
IPC分类号： B01J3/00 , C23C14/24 , C23C14/56 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To uniformly and simply bake an inner wall within a short time by providing a jacket around an apparatus and allowing a temp. control medium to flow in the jacket. CONSTITUTION:When an apparatus is evacuated by starting a vacuum pump, the temp. of the medium (silicone oil) in a jacket 1 is controlled and the medium is circulated from medium inlets 2a, 2b to outlets 3a, 3b to be allowed to stand as it is and degassing is sufficiently carried out. Thereafter, the temp. of the medium is gradually lowered to cool the medium to room temp. to obtain ultrahigh vacuum. By this method, uniform heating and cooling become possible. Further, by using a medium stable within the range from heating temp. to cooling temp., baking and cooling can be simply performed only by changing the temp. of a temp. control system.

4. 发明专利

JPS57200300A SUBSTRATE FIXTURE OF TREATING APPARATUS IN LIQUID 失效
公开(公告)号：JPS57200300A
公开(公告)日：1982-12-08
申请号：JP8483481
申请日：1981-06-01
申请人： KOKUSAI ELECTRIC CO LTD , HITACHI LTD
发明人： TANABE MIKIO , HIURA KAZUO , OZAWA MAKOTO , HIRATA HIDEKAZU , SAKUMA KIRIYOU
IPC分类号： C30B19/06 , C30B19/00 , C30B35/00 , H01L21/02 , H01L21/208
摘要： PURPOSE:To make the treatment in a liquid quick and smooth, by making a substrate fixture having the bottom, top to be in point contact with a substrate, a substrate inlet and outlet and a slip-off preventing part of the substrate rotatable by an eccentric rotating shaft. CONSTITUTION:In growing an liquid-phase epitaxial film on a substrate 5, the substrate 5 is inserted from a substrate inlet 8 of a fixture and supported by the point contact with points (A), (B) and (C) of the bottom 6. The substrate 5 in this state is then introduced into a liquid in a crucible and floated by the buoyancy of the liquid and pressed by the contact with points (A'), (B') and (C') at the top 7. A rotating and supporting shaft 4 is then rotated in a given direction in a state indicated by a virtual line, and the substrate 5 is pressed to the point (C') by the centrifugal force and buoyancy due to the eccentricity of the center (50) and the center of rotation (40) of the substrate 5 by the distance of eccentricity (e) and will not be separated from the substrate fixture. If the shaft 4 is rotated at a high speed to shake off the solvent stuck to the substrate 5, the substrate 5 is not separated from the fixture due to the fixing thereof by its own weight and the centrifugal force.

5. 发明专利

JPH04280625A GAS CONTROL DEVICE FOR LOAD LOCK CHAMBER OF VERTICAL TYPE DIFUSION CVD DEVICE 失效
公开(公告)号：JPH04280625A
公开(公告)日：1992-10-06
申请号：JP6916491
申请日：1991-03-08
申请人： KOKUSAI ELECTRIC CO LTD
发明人： TANABE MIKIO , TAKAHASHI HIROSHI
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To reduce the quantity of nitrogen gas used by a method wherein the atmospheric gas in a load lock chamber is circulated by opening an ON-OFF valve when oxygen concentration exceeds the prescribed value and the ON-OFF valve is closed when the oxygen concentration is lower than the prescribed value. CONSTITUTION:ON-OFF valves 8 and 9 are opened, nitrogen gas is allowed to flow, and the interior of a load lock chamber 2 is replaced with nitrogen gas. When the set valve of the oxygen concentration in the load lock chamber 2 becomes 1ppm or lower, for example, in the above-mentioned replacement process, the ON-OFF valves 8 and 9 are closed, the sealed-in nitrogen gas is circulated to bypass pipe 10 by driving a circulation pump 11. Besides, the opening and closing of the ON-OFF valves 8 and 9 is controlled in such a manner that the pressure in the load lock chamber 2 will be a little higher than the atmospheric pressure taking into consideration of the leak from the load lock chamber 2 and the ON-OFF valves 8 and 9. As a result, the quantity of nitrogen gas consumed can be reduced.

6. 发明专利

JPH0217518B2 失效
公开(公告)号：JPH0217518B2
公开(公告)日：1990-04-20
申请号：JP24026184
申请日：1984-11-13
申请人： KOKUSAI ELECTRIC CO LTD
发明人： TANABE MIKIO , NAKAMURA SHUICHI
IPC分类号： C30B15/00 , C30B15/14 , F16K49/00

7. 发明专利

JPH01313385A METHOD FOR CONTROLLING DIAMETER OF SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH01313385A
公开(公告)日：1989-12-18
申请号：JP14201288
申请日：1988-06-09
申请人： KOKUSAI ELECTRIC CO LTD
发明人： ISHIZU HIDEO , TANABE MIKIO , AOKI DAIYA
IPC分类号： C30B15/28 , C30B15/20 , H01L21/208
摘要： PURPOSE:To stably control the diameter of a semiconductor single crystal and to uniformize the quality of the single crystal by adding a predictor control system by a temp. change pattern with the growth length or weight as a function in the title control method consisting of a control system for the pulling up velocity of a semiconductor single crystal of the CZ method and a melt temp. control system. CONSTITUTION:The control method consists of a control system for controlling the pulling up velocity of a single crystal pulling up driving part 3 and a control system for controlling the heating temp. of a molten single crystal in the semiconductor single crystal pulling up device by the CZ method and used for growing a single crystal having desired length or weight and pulling up the crystal. In this method, the predictor control system consisting of a program controller 17, wherein a desired temp. change pattern measured in accord with the change in the length or weight of a pulled up single crystal as an approximate polygonal-line temp. change pattern for each section obtained by plurally dividing the desired length and weight is previously inputted and set, is added to the temp. control system. The output M6 of a detector 19 for detecting the length or weight of the pulled up single crystal provided in the driving part 3 is inputted to the program controller 17, and the change in the heating temp. is controlled in accord with the approximate polygonal-line temp. change pattern.

8. 发明专利

JPS63314843A METHOD OF TRANSFERRING WAFER IN VERTICAL SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JPS63314843A
公开(公告)日：1988-12-22
申请号：JP15231287
申请日：1987-06-17
申请人： KOKUSAI ELECTRIC CO LTD
发明人： TANABE MIKIO , WATANABE SEIJI
IPC分类号： B65H5/18 , B65G49/07 , H01L21/673 , H01L21/677 , H01L21/68
摘要： PURPOSE:To improve throughput, by providing a boat rotating mechanism for transferring a boat carrying untreated wafers from the transfer-side position to the furnace-side position while transporting a boat carrying treated wafers vice versa. CONSTITUTION:A boat rotating mechanism 8 is provided with stages 11 at the axes of the opposite ends of a rotating arm 10 having a rotating shaft at the center thereof, so that the stages support the lower ends of a boat 3a carrying untreated wafers 2a and of a boat 3b carrying treated wafers 2b, respectively. Rotation of the arm 10 transports the boat 3a carrying the untreated wafers 2a and the boat 3b carrying the treated wafers 2b supported by the stages 11 to the furnace-side position (from which the boat 3a can be introduced into a reaction furnace 6) and to the transfer-side position (where the treated wafers are transferred from the boat 3b to a cassette 1), respectively.

9. 发明专利

JPS6134953A Batch replacement unit for wafer 失效
标题翻译：批量替代替代单元
公开(公告)号：JPS6134953A
公开(公告)日：1986-02-19
申请号：JP15631884
申请日：1984-07-25
申请人： Kokusai Electric Co Ltd
发明人： TAKEDA SHIGERU , KANO RIICHI , NAKAMURA SHUICHI , TANABE MIKIO , DAIDOJI KENJI , TAKAHASHI YUTAKA
IPC分类号： H01L21/677 , H01L21/67 , H01L21/68
摘要： PURPOSE: To suppress the generation of dust by a method wherein a laterally moving mechanism is provided, travelling laterally for the delivery of wafers to a casette and then for the delivery of wafers to a boat, in a unit composed of an upper and lower blocks arranged with a prescribed distance between them.
CONSTITUTION: A laterally transporting means 9 is actuated to transport a first casette 5 between an upper, lower blocks 7, 8. The lateral movement is caused to end when grooves 11 of comb-shaped plates 11a, 11b belonging to the upper block 7 are in line with the grooves 5a of the first casette 5. A process follows of causing a wafer pushing-up means 6, belonging to the lower block 8 and corresponding to the first casette 5, to go up, pushing up the 25 wafers 4 accommodated in the first casette 5 along the grooves 5a of the casette 5 and the grooves 11 of the pair of comb-shaped plates 11a, 11b, located on lines produced from the grooves 5a. Next, a wafer stopping means 12 is made to protrude out, supporting the 25 wafers taken out of the first casette 5. The wafer pushing-up means 6 comes down to return to the lower block 8. The laterally transporting means 9 is actuated, and then the same procedure is repeated for the second casettes 5 and the casettes which follow.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了抑制灰尘的产生，其中设置有横向移动的机构，横向移动以将晶片递送到盒子，然后用于将晶片输送到船上，以由上部和下部块体组成的单元安排在他们之间规定的距离。构成：侧向传送装置9被致动以将第一盒5传送到上部块7和下部块8之间。当属于上部块7的梳状板11a，11b的凹槽11为与第一盒5的凹槽5a一致。接下来是使属于下块8并对应于第一盒5的晶片上推装置6上升，向上推动容纳的25个晶片4 沿着盒体5的槽5a和位于从凹槽5a产生的线上的一对梳状板11a，11b的槽11在第一盒5中。接下来，使晶片止动装置12突出，支撑从第一盒5取出的25个晶片。晶片上推装置6下降以返回到下块8.侧向输送装置9被致动，然后对于第二盒5和跟随的盒子重复相同的步骤。

10. 发明专利

JPH0590177A WAFER HEATER 失效
公开(公告)号：JPH0590177A
公开(公告)日：1993-04-09
申请号：JP27696991
申请日：1991-09-26
申请人： KOKUSAI ELECTRIC CO LTD
发明人： NOMURA HISASHI , TANABE MIKIO , IKEDA FUMIHIDE
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To form CVD films in even thickness on a wafer surface by a method wherein an auxiliary heater compensating the temperature decline in a heater end is provided on the end of a power supplied resistance heater. CONSTITUTION:Within a CVD device, the central side end of a power supplied resistance spiral heater 1 is bent downward to be modified into an auxiliary heater 3 for compensating the temperature decline in the end part 1A of the heater 1. Next, when the wiring between the electrode terminals 2 of this spiral heater 1 is supplied with the power, the temperature decline in the electrode terminal 2 parts on the central side of the heater 1 can be compensated by the auxiliary heater 3. That is, the temperature declined in the end part 1A of the heater 1 can be compensated by the auxiliary heater 3 to make the distribution of temperature of the wafer 7 even. Through these procedures, CVD films in even thickness can be formed on the wafer 7 surface.

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