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    • 4. 发明专利
    • MANUFACTURE OF WIRING BOARD
    • JPH08107279A
    • 1996-04-23
    • JP23873894
    • 1994-10-03
    • HITACHI LTD
    • ISHINO MASAKAZUYAMAZAKI TETSUYAMATSUZAKI EIJI
    • H05K3/06H05K3/24H05K3/46
    • PURPOSE: To make it possible to form reliably a wiring pattern having a highly reliable via stud by a method wherein the wiring pattern is formed in a state that the via stud is completely covered with an etching resist of a shape dimension decided by specified functions. CONSTITUTION: While a via stud 105 is protected with an etching resist 106, a wiring pattern is formed on a conductor layer 102. At that time, the shape dimension of the etching resist 106 covering the stud 105 is decided by functions of the angle α of inclination of the wall surface of the stud 105 at the time of electroplating of a through hole provided in a plated resist 103, an angle βof inclination from a segment dropped vertically from a via stud top end part in the resist 106 covering the stud 105 to the surface of a substrate, the diameter (d) of the bottom of the stud 105, the height (h) of the stud 105 and an alignment error (δ) of a photomask. The wiring pattern is formed in a state that the stud 105 is completely covered with the resist 106.
    • 6. 发明专利
    • MANUFACTURE OF THIN FILM MULTILAYER WIRING BOARD
    • JPH07226589A
    • 1995-08-22
    • JP1509394
    • 1994-02-09
    • HITACHI LTD
    • ISHINO MASAKAZU
    • H05K3/46
    • PURPOSE:To enable formation of a via at a fine interval to a wiring board of a thick insulation film by forming a tapered via which can provide a large opening area and by forming a vertical via at a lower diameter which is smaller than an upper diameter of the tapered via in an upper part of the tapered via. CONSTITUTION:A wiring metal 302 is successively formed to a film in a board 301. Resist is applied to the wiring metallic layer 302 and a wiring pattern is exposed and developed. Thereafter, it is removed by etching and a lower wiring layer 303 is formed. An insulation layer 324 is applied to the lower wiring layer 303 and total exposure and development are performed for it excepting a tapered via hole formation part 325 which can provide a large opening area. A second insulation layer 314 is applied by a spinner and a vertical via hole 315 is formed by dry etching. Thereby, a via which enables connection of up and down wiring layers with good yield can be realized while maintaining fine wiring pitch.