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    • 1. 发明专利
    • Electron beam device, and manufacturing method of device using the same
    • 电子束装置,以及使用该装置的装置的制造方法
    • JP2003031171A
    • 2003-01-31
    • JP2001217858
    • 2001-07-18
    • Ebara CorpNikon Corp株式会社ニコン株式会社荏原製作所
    • HAMASHIMA MUNEKINAKASUJI MAMORUKATO TAKAONOMICHI SHINJISATAKE TORU
    • G21K1/02G21K5/04H01J9/14H01J37/09H01L21/66
    • PROBLEM TO BE SOLVED: To provide an electron beam device enabled to obtain multi-beam by using an electron gun having one cathode, and to provide a manufacturing method of a device using the electron beam device. SOLUTION: The electron beam device irradiates an electron beam emitted from a cathode 63 having a plurality of protrusions to a plurality of openings of a plate with openings 3, and reduce-projects the electron beam passed through the openings on a sample. The plurality of openings on the plate with openings 3 are formed by etching a Si single crystal plate 21. The plurality of openings on the plate with openings 3 can be formed by metal coating. A square nock hole, for the positioning of θ-direction, is formed to the plate with openings 3, or the outer form of the plurality of openings on the plate with openings 3 has sides which are parallel with X-axis or Y-axis.
    • 要解决的问题:提供一种能够通过使用具有一个阴极的电子枪来获得多光束的电子束装置,并提供使用电子束装置的装置的制造方法。 解决方案:电子束装置将具有多个突起的阴极63发射的电子束照射到具有开口3的板的多个开口中,并且减少通过样品上的开口的电子束。 通过蚀刻Si单晶板21形成具有开口3的板上的多个开口。具有开口3的板上的多个开口可以通过金属涂层形成。 在具有开口3的板上形成用于定位θ方向的方形孔,或者具有开口3的具有开口3的板上的多个开口的外部形状具有与X轴或Y轴平行的侧面 。
    • 2. 发明专利
    • Electron beam device, and manufacturing method of the device using electron beam device
    • 电子束装置以及使用电子束装置的装置的制造方法
    • JP2002373612A
    • 2002-12-26
    • JP2001181968
    • 2001-06-15
    • Ebara CorpNikon Corp株式会社ニコン株式会社荏原製作所
    • HAMASHIMA MUNEKINAKASUJI MAMORUKATO TAKAONOMICHI SHINJISATAKE TORU
    • G01N23/225G01R31/02G21K5/04H01J37/22H01J37/244H01J37/28H01J37/29
    • PROBLEM TO BE SOLVED: To provide an electron beam device, capable of maximally utilizing an advantage of using multi-beams by providing a specific signal processing circuit processing a detection signal, after detecting a secondary electron by a detector. SOLUTION: The electron beam device is provided with a primary optical system 10 scanning a sample by focusing a plurality of primary electron beams, a secondary optical system 30 introducing a plurality of secondary electrons emitted from the sample by the first electron beams to each detector 41, and a detection system 40 performing image processing of a plurality of detection signals outputted from each detector. In the detection system, an analog-to- digital converter 42 which converts detection signal from a detector into a digital signal, an imaging circuit 43 converting the digital signal into a two-dimensional pattern, a circuit 44 detecting an edge of the two-dimensional pattern and converting it into an edge image, and a pattern comparison circuit 48 comparing the detected two-dimensional pattern with a two-dimensional pattern from pattern data are individually provided by each detector.
    • 要解决的问题:提供一种电子束装置,其能够通过在检测器检测到二次电子之后提供处理检测信号的特定信号处理电路,最大限度地利用使用多光束的优点。 解决方案:电子束装置设置有通过聚焦多个一次电子束来扫描样品的主光学系统10,将由第一电子束从样品发射的多个二次电子引入到每个检测器41的二次光学系统30 以及对从各检测器输出的多个检测信号进行图像处理的检测系统40。 在检测系统中,将检测信号从检测器转换为数字信号的模拟数字转换器42,将数字信号转换为二维图案的成像电路43,检测二维图像的边缘的电路44, 并且将其转换成边缘图像,并且由每个检测器分别提供将检测到的二维图案与来自图案数据的二维图案进行比较的图案比较电路48。
    • 3. 发明专利
    • Electron beam device and device manufacturing method using the device
    • 电子束装置和使用装置的装置制造方法
    • JP2003016985A
    • 2003-01-17
    • JP2001202970
    • 2001-07-04
    • Ebara CorpNikon Corp株式会社ニコン株式会社荏原製作所
    • HAMASHIMA MUNEKINAKASUJI MAMORUKATO TAKAONOMICHI SHINJISATAKE TORU
    • G01N23/225H01J37/21H01J37/28H01J37/29H01L21/66
    • PROBLEM TO BE SOLVED: To detect the optical axis direction position of a sample without using complicated expensive parts, with no restrictions on the dimension and spacing of each part. SOLUTION: A Z-sensor is provided with electrostatic deflection systems 19, 20. The deflection systems 19, 20 are connected to a deflection voltage ratio setter 27 for setting the ratio of each deflection voltage, through a control power supply 26, and capable of adjusting the deflection center within a prescribed range from the upper side to the lower side of a sample face. The sample 8 is formed with a marker 18 formed of a substance with a large secondary electron emission rate η on the right side and a substance with small ηon the left side, and a display part 29 can display the image of the marker 18. The optical axis direction position of the sample face is detected on the basis of the deflection voltage ratio of the deflection systems 19, 20 when the left and right of a secondary electron image of the marker obtained while a primary electron beam is deflected by the electrostatic deflection systems 19, 20 to scan on the marker 18, are just reversed, or the magnification substantially becomes infinite.
    • 要解决的问题:在不使用复杂的昂贵部件的情况下检测样品的光轴方向位置,对每个部件的尺寸和间距没有限制。 解决方案:Z传感器设置有静电偏转系统19,20.偏转系统19,20连接到偏转电压比设定器27,用于通过控制电源26设置每个偏转电压的比率,并且能够 将偏转中心调整在从样品面的上侧到下侧的规定范围内。 样品8由右侧具有大的二次电子发射率η的物质和左侧的小的物质形成的标记18形成,显示部29可以显示标记18的图像。 基于偏转系统19,20的偏转电压比,当在一次电子束被静电偏转偏转时获得的标记的二次电子图像的左右被检测到样品面的光轴方向位置 在标记18上进行扫描的系统19,20被恰好反转,或者放大率基本上变得无限大。
    • 5. 发明专利
    • Semiconductor manufacturing apparatus
    • 半导体制造设备
    • JP2007281492A
    • 2007-10-25
    • JP2007120564
    • 2007-05-01
    • Ebara Corp株式会社荏原製作所
    • NAKASUJI MAMORUSATAKE TORUNOMICHI SHINJI
    • H01L21/66G03F1/84G03F1/86H01L21/027
    • PROBLEM TO BE SOLVED: To save a sample transport means between a semiconductor manufacturing apparatus and a detection device, reduce the installation area, reduce the total cost and decrease the probability of the sample contamination by sharing loading means and unloading means of the semiconductor manufacturing apparatus and the detection device such as a chemical mechanical polisher for samples such as wafers.
      SOLUTION: The detection device 25 is provided with a built in chemical mechanical polisher 100 for samples such as wafers. The polisher 100 is further equipped with a loading unit 21, a chemical mechanical polishing unit 22, a cleaning unit 23, a drying unit 24, and an unloading unit 26. Respective treatments are performed by the respective units in the polisher 100 and treated samples are transported to a successive step 109. A sample loading means, a sample unloading means and a transporting means are not necessary for the movement of the samples between the respective units. A stencil mask is irradiated from the rear side with a planar beam; the transmitted beam is mapped and projected; and images are detected by a TDI detector. Therefore, since a large number of pixels can be simultaneously imaged, detection can be made with a high throughput.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了在半导体制造装置和检测装置之间保存样品传送装置,通过共享装载装置和卸载装置来减少安装面积,降低总成本并降低样品污染的可能性 半导体制造装置和用于诸如晶片的样品的化学机械抛光机的检测装置。 解决方案:检测装置25设置有用于诸如晶片的样品的内置化学机械抛光机100。 抛光机100还配备有装载单元21,化学机械抛光单元22,清洁单元23,干燥单元24和卸载单元26.各种处理由抛光机100中的各单元执行,并且处理样品 被输送到连续的步骤109.样品加载装置,样品卸载装置和输送装置对于样品在各个单元之间的移动是不必要的。 从后侧用平面光束照射模板掩模; 发射光束被映射和投影; 并且图像由TDI检测器检测。 因此,由于可以同时成像大量的像素,因此可以以高产量进行检测。 版权所有(C)2008,JPO&INPIT
    • 7. 发明专利
    • Detection device and inspection device
    • 检测装置和检测装置
    • JP2007048686A
    • 2007-02-22
    • JP2005234079
    • 2005-08-12
    • Ebara Corp株式会社荏原製作所
    • HATAKEYAMA MASAKIYOSHIKAWA SHOJISUEMATSU KENICHIKARIMATA TSUTOMUNOMICHI SHINJI
    • H01J37/244G01R31/302H01J37/29H01L21/66
    • H01J37/261H01J37/244H01J37/28H01J2237/2441H01J2237/2446
    • PROBLEM TO BE SOLVED: To reduce a time loss accompanied by a replacing work of a detection device. SOLUTION: The inspection device is equipped with a plurality of detection devices 11, 12 to receive electron beams emitted from a sample W and to obtain image data expressing the sample W, and a switching mechanism M to make the electron beams incident on one out of a plurality of the detection devices 11, 12, and the plurality of the detecting devices 11, 12 are arranged in the same container MC. The plurality of the detection devices 11, 12 can be obtained by the combination of the detection device provided with an electron sensor to convert the electron beams into electric signals, and with the detection device provided with a light sensor to convert the light into the electric signals. The switching mechanism M may be a mechanical moving mechanism or an electron beam deflector. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:减少伴随着检测装置的更换工作的时间损失。 检测装置配备有多个检测装置11,12,用于接收从样品W发射的电子束,并获得表示样品W的图像数据,切换机构M使电子束入射 多个检测装置11,12中的一个和多个检测装置11,12被布置在同一容器MC中。 多个检测装置11,12可以通过组合具有电子传感器的检测装置来将电子束转换为电信号而获得,并且检测装置设置有光传感器以将光转换成电 信号。 切换机构M可以是机械移动机构或电子束偏转器。 版权所有(C)2007,JPO&INPIT
    • 8. 发明专利
    • Defect inspection method
    • 缺陷检查方法
    • JP2006317466A
    • 2006-11-24
    • JP2006219104
    • 2006-08-11
    • Ebara Corp株式会社荏原製作所
    • HAMASHIMA MUNEKIHATAKEYAMA MASAKINOMICHI SHINJISATAKE TORUNAKASUJI MAMORUMURAKAMI TAKESHIWATANABE KENJI
    • G01N23/225G01N1/28
    • PROBLEM TO BE SOLVED: To provide a defect inspection method that can appropriately control a charge amount of a surface of a sample even when the irradiation current value for enlarging the throughput or the like is increased, obtains clear image data with small distortion, and can perform an inspection with high reliability.
      SOLUTION: The defect inspection method employs an inspection device having a beam source 1 for irradiating a sample 10 with a charged particle beam 2 and a detector 18 for detecting a charged particle from the sample surface. The surface of the sample 10 is coated with a resistance film 42 having a predetermined electric resistance value, the charged particle beam 2 is radiated to the sample 10, and a secondary charged particle or the like generated from the sample surface is detected by the detector 18.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:为了提供即使当用于扩大吞吐量等的照射电流值增加时也可以适当地控制样品表面的电荷量的缺陷检查方法,获得具有小失真的清晰图像数据 ,可以高可靠性进行检查。 解决方案:缺陷检查方法采用具有用于向样品10照射带电粒子束2的光束源1和用于检测来自样品表面的带电粒子的检测器18的检查装置。 样品10的表面涂覆有具有预定电阻值的电阻膜42,将带电粒子束2照射到样品10,并且由检测器检测从样品表面产生的二次带电粒子等 18.版权所有(C)2007,JPO&INPIT
    • 9. 发明专利
    • Information recording medium test equipment and method
    • 信息记录介质测试设备和方法
    • JP2006114113A
    • 2006-04-27
    • JP2004299952
    • 2004-10-14
    • Ebara Corp株式会社荏原製作所
    • TOYAMA KEIICHINOMICHI SHINJIYOSHIKAWA SEIJI
    • G11B7/26G01N23/225G11B7/005
    • G11B7/268H01J2237/2441H01J2237/2446
    • PROBLEM TO BE SOLVED: To provide a test equipment which can inspect for not only defects but shapes of an information recording medium, such as a CD or a DVD, and can also cope with high capacity.
      SOLUTION: An electron gun 12 irradiates a desired position of the information recording medium with an electron beam. A stage 18 movably holds the information recording medium in the rotation direction and the radial direction. A detector 22 detects electrons which acquire information on a surface of the information recording medium by irradiating the information recording medium with the electron beam. An image generating device 24 acquires images of the surface of the information recording medium from the electrons detected by the detector 22.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种可以检查诸如CD或DVD之类的信息记录介质的缺陷或形状的测试设备,并且还可以处理高容量。 解决方案:电子枪12用电子束照射信息记录介质的期望位置。 台架18沿着旋转方向和径向移动地保持信息记录介质。 检测器22通过用电子束照射信息记录介质来检测获取信息记录介质的表面上的信息的电子。 图像生成装置24从由检测器22检测出的电子获取信息记录介质的表面的图像。(C)2006,JPO&NCIPI
    • 10. 发明专利
    • Electron beam device and device manufacturing method using the same
    • 电子束装置及其装置的制造方法
    • JP2006054192A
    • 2006-02-23
    • JP2005258657
    • 2005-09-07
    • Ebara CorpToshiba Corp株式会社東芝株式会社荏原製作所
    • SUGIHARA KAZUYOSHIYAMAZAKI YUICHIRONAKASUJI MAMORUNOMICHI SHINJISATAKE TORU
    • H01J37/28G03F7/20H01J37/12H01J37/18H01L21/027
    • PROBLEM TO BE SOLVED: To provide an electron beam device in which differential exhaust is possible even by an electrostatic lens in which vacuum condition is severer than a magnetic lens, differential exhaust is possible under a system which easily starts discharge such as a decelerating field objective lens, combination of an electron gun using LaB6 cathode and differential exhaust is possible, and the electron gun is operated under the space charge limiting condition with a low shot noise, and a device manufacturing method for manufacturing a semiconductor device using the electron beam device.
      SOLUTION: The electron beam device comprises an electron optical system having an electron gun 2 and an objective lens 7 consisting of an electrostatic lens that irradiates primary electron beams emitted from the electron gun on an inspection object, and an exhaust head 12 of a differential exhaust system arranged outside of the objective lens. The spacing between the electrode of the objective lens 7 located at the nearest the inspection object W and the inspection object is same as or smaller than the distance d1-d3 between the member of the exhaust head limiting exhaust conductance of the differential exhaust system and the inspection object W.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了提供一种电子束装置,其中甚至可以通过其中真空条件比磁性透镜更严格的静电透镜来实现差分排气,在容易开始放电的系统(例如, 减速场物镜,可以使用LaB6阴极和差分排气的电子枪的组合,并且电子枪在具有低散射噪声的空间电荷限制条件下运行,以及使用该电子制造半导体器件的器件制造方法 梁装置。 解决方案:电子束装置包括具有电子枪2的电子光学系统和由在检查对象上照射从电子枪发射的一次电子束的静电透镜构成的物镜7和排出头12 布置在物镜外部的差动排气系统。 位于最接近检查对象W的物镜7的电极与检查对象之间的间隔与差动排气系统的排气头的排气头的构件之间的距离d1-d3小于或等于 检验对象W.版权所有(C)2006,JPO&NCIPI