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51. 发明专利

JPH031821B2 失效
公开(公告)号：JPH031821B2
公开(公告)日：1991-01-11
申请号：JP28680785
申请日：1985-12-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIMANO HIROKI , YOSHIOKA NOBUYUKI , NISHIKAWA KIICHI , FUJIWARA NOBUO
IPC分类号： G03F1/00 , G03F1/22 , G03F1/58 , H01L21/027 , H01L21/30

52. 发明专利

JPS6461021A X-RAY TRANSFERRING DEVICE 失效
公开(公告)号：JPS6461021A
公开(公告)日：1989-03-08
申请号：JP21889187
申请日：1987-08-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJINO TAKESHI , MORIMOTO HIROAKI , YOSHIOKA NOBUYUKI
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To easily reduce and transfer the pattern of a mask onto a matter to be formed with the pattern by irradiating the matter with an X-ray through the mask formed with the pattern by forming part of a thin single crystalline film amorphous. CONSTITUTION:A mask substrate 10 formed with an amorphous part 12 in response to a pattern on a thin single crystalline film is irradiated with an X-ray 8. Diffracted X-ray 12 is irradiated in a direction for satisfying the equation of diffraction on a single crystalline part 11. A wafer 6 to be transferred with the pattern is coated with X-ray resist 7, and when it is disposed at a position where transmitted X-ray 9 is not irradiated by directing its face to the X-ray 13, the pattern of the substrate 10 is transferred to the resist 7. Thus, the pattern of the substrate 10 is easily reduced and transferred onto the wafer 6.

53. 发明专利

JPS6439021A X-RAY MASK 失效
公开(公告)号：JPS6439021A
公开(公告)日：1989-02-09
申请号：JP19570687
申请日：1987-08-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEUCHI SUSUMU , YOSHIOKA NOBUYUKI
IPC分类号： G03F1/00 , G03F1/22 , G03F1/84 , G03F1/86 , H01L21/027
摘要： PURPOSE:To reduce the electrification of a transparent thin film and obtain a sharp pattern at the time of aligning X-rays thereto by forming a transparent conductive thin film by stacking along the rear of the transparent thin film and the rear of the supporting section. CONSTITUTION:A supporting section 8 formed on the rear of a thin film 1, and a transparent conductive thin film 5 formed by stacking from the rear of the thin film 1 to the bottom of the supporting section 3 are formed. Electrons charged to the thin film 1 at such time as of inspecting patterns by applying an electron beam are discharged to the ground through a transparent conductive thin film 5 which is grounded. The transparent conductive thin film 5, formed by stacking along the rear of the thin film 1 and the rear of the supporting section 3, causes the total thickness of the thin film 1 and the transparent conductive thin film 5 to be equal independently of the position of X-ray irradiation. According to the constitution, a sharp pattern can be obtained at the time of aligning X-rays.

54. 发明专利

JPS62202538A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62202538A
公开(公告)日：1987-09-07
申请号：JP4464486
申请日：1986-02-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAO SHUJI , AJIKA NATSUO , YOSHIOKA NOBUYUKI , FUJINAGA MASATO
IPC分类号： H01L21/76 , H01L21/316
摘要： PURPOSE:To obtain an element isolation oxide film having no brid-beak and a small area by conducting tapered etching through which the lower section of a semiconductor substrate is narrowed gradually, forming the element isolation oxide film, shaping a mask onto the element isolation oxide film in a self-alignment manner by a resist and etching only the peripheral section of the element isolation oxide film. CONSTITUTION:Tapered etching through which a lower section is narrowed gradually is performed to an silicon substrate 1, using an silicon nitride film 3 and a resist 4 as masks. Impurity ions 5 for channel cutting are implanted. An element isolation oxide film 2 is formed, and the resist 4 and the silicon nitride film 3 are removed. When the surface of the oxide film 2 is coated flatly with the resist 4 again and the resist 4 is removed until the peripheral section of the oxide film 2 is exposed, a mask 4' is shaped in a self-alignment manner. Lastly, an element isolation oxide film 2' having no brid-beak and a small area is acquired through isotropic etching by employing the mask 4'.

55. 发明专利

JPS61222130A FORMING METHOD OF RESIST PATTERN 失效
公开(公告)号：JPS61222130A
公开(公告)日：1986-10-02
申请号：JP6570385
申请日：1985-03-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： CHIBA AKIRA , HOSHIKA HARUYUKI , SUZUKI YOSHIKI , YOSHIOKA NOBUYUKI , ISHIO NORIAKI
IPC分类号： H01L21/30 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To conform a resist pattern to a predetermined pattern by exposing a resist layer for exposure, which has ununiform film thickness and the values of ununiform film thickness thereof can previously be determined at a required position on a substrate on which a resist is applied, and dividing the resist layer into two of a removal easy section and a removal difficult section. CONSTITUTION:In compensation at a step when a compensation pattern is prepared from a predetermined pattern 8, the boundaries of removal difficult sections 2Q before development where boundaries after development coincide with or are brought close to the boundaries of each section of the predetermined pattern 8 according to the generation mechanism of the pattern displacement are predicted from data capable previously determining the film thickness of each section of a resist layer 2 for exposure and the magnitude of development action, and the boundaries are acquired. Consequently, the displacement of a resist pattern 2R actually obtained to the predetermined pattern 8 is further reduced regarding pattern displacement generated in a development process due to the ununiformity of the resist layer 2 for exposure, and brought to zero in principle on a special case.

56. 发明专利

JPS61107642A Cooling method of target for generating x-rays 失效
标题翻译：用于产生X射线的目标的冷却方法
公开(公告)号：JPS61107642A
公开(公告)日：1986-05-26
申请号：JP23060984
申请日：1984-10-30
申请人： Mitsubishi Electric Corp
发明人： HOSHIKA HARUYUKI , SUZUKI YOSHIKI , YOSHIOKA NOBUYUKI , ISHIO NORIAKI , CHIBA AKIRA
IPC分类号： F25D3/10 , H01J35/12
CPC分类号： H01J35/12
摘要： PURPOSE:To improve cooling effect by providing a cavity part in a target supporter serving to support a target on the side of the target, and supplying compressed liquefied gas thereinto for cooling the target by making use of heat vaporization of said gas. CONSTITUTION:A cavity part 7 is formed in a target supporter 2 for supporting a target 1 serving to generate X-rays 4 with irradiation of an electron beam 3 on the side of the target 1, and a pipe 8 for liquefied gas is provided in communication with said cavity part. In succession, liquefied gas 9 such as Freon, etc., is blown into the cavity part 7 from a nozzle part 10 and rapidly vaporized into gas, whereby the target 1 is cooled with the aid of vaporization heat produced thereupon. Thus, cooling effect can greatly be improved as compared with a case by water cooling for taking out a higher X-ray output.
摘要翻译：目的：通过在目标支撑体中设置用于支撑目标侧的目标的空腔部分，并且通过利用所述气体的热汽化来供应压缩的液化气体来冷却目标，来改善冷却效果。构成：在目标支撑体2中形成空腔部7，用于通过照射目标1侧的电子束3来支撑用于产生X射线4的靶1，并且在液体气体管8中设置有用于液化气体的管8 与所述腔部连通。接着，将诸如氟利昂等的液化气体9从喷嘴部分10吹入空腔部分7中并迅速汽化成气体，由此借助于其上产生的蒸发热来冷却靶材1。因此，与通过水冷用于取出较高的X射线输出的情况相比，可以大大提高冷却效果。

57. 发明专利

JPS60223124A PATTERN INSPECTION DEVICE 失效
公开(公告)号：JPS60223124A
公开(公告)日：1985-11-07
申请号：JP8060484
申请日：1984-04-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEUCHI SUSUMU , YOSHIOKA NOBUYUKI
IPC分类号： H01L21/66 , G06T1/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To inspect a pattern at high resolution and the high speed of processing by simultaneously irradiating the whole surface of a sample by charged beams and detecting a defect by a two-dimensional detector. CONSTITUTION:Rectilinear charged beams having uniform distribution discharged from a charged beam source 14 are projected onto a sample 2 in the same manner as beams emitted from a light source. Charged beams projected to the sample 2 intrude into the sample 2, and transmit the sheet-shaped sample 2 in response to transmittance determined by the energy of charged particles and the constituent, density, etc. of each section of the sample 2. Charged beams transmitting the sample 2 are magnified by an electromagnetic type or electrostatic type lens system 16 mounted to the lower section of the sample, and changed into an electric signal by a two-dimensional detector 17. A two-dimensional pattern data signal obtained in this manner is processed by a data processing section 18, thus removing a defect.

58. 发明专利

JPS60203939A SUBMICRON TREATMENT USING X-RAY SENSITIVE RESIST 失效
公开(公告)号：JPS60203939A
公开(公告)日：1985-10-15
申请号：JP6435284
申请日：1984-03-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , SUZUKI YOSHIKI
IPC分类号： C08F8/18 , C08F8/20 , G03C5/08 , G03F7/004 , G03F7/038 , G03F7/20 , H01L21/027
摘要： PURPOSE:To obtain high sensitivity, superior resolution, and dry etching resistance by using a chlorinated polymethylstyrene having a specified chlorination rate and a specified mol.wt. range as a resist material. CONSTITUTION:Chlorinated polymethylstyrene (CPMSR) having 90-120% chlorination rate and 400,000-600,000mol.wt. range is used as an X-ray sensitive resist material used for forming a pattern by selectively irradiating PdLalpha rays and developing it. Sensitivity can be enhanced such CPMSR has a high content of C having high absorption coefft. of PdLalpha rays, and high contrast can be attained by selecting said range of chlorination rate. Uniform resist film thickness can be obtained by using said polymer of said mol.wt. range. As a result, the obtained X-ray resist has high sensitivity to PdAalpha rays, a gamma value of >=1.0, and superior resolution and dry etching resistance, and it permits microfabrication in the manufacture process of semiconductors in the submicron region.

59. 发明专利

JPS6083033A MANUFACTURE OF MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPS6083033A
公开(公告)日：1985-05-11
申请号：JP19182183
申请日：1983-10-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , SUZUKI YOSHIKI , YAMAZAKI TERUHIKO
IPC分类号： G03F1/00 , G03F1/68 , G03F1/80 , H01L21/027
摘要： PURPOSE:To eliminate an Au film etching stage and to obtain a mask for X-ray exposure having high masking efficiency by removing the parts of a thin film as a substrate on which no Au film is formed so as to inhibit the absorption of X- rays in the thin film. CONSTITUTION:A polyimide film 2 for the thin film substrate of a mask for X- ray exposure, a Ti film 4 and a resist film 5 having a desired pattern are successively formed on a silicon substrate 1. The Ti film 4 is etched through the resist film 5 as a mask by reactive ion etching with gaseous CCl4. The thin film 2 is etched through the etched Ti film 4 as a mask by reactive ion etching with gaseous O2 to remove the parts not covered with the Ti film 4. The central part of the substrate 1 is removed by etching with an aqueous soln. of fluoronitric acid or KOH so that the peripheral part remains as a frame. An Au film 3 is then formed on the Ti film 4 by vapor deposition or other method. Thus, an Au film etching stage is made unnecessary, X-ray transmission loss due to the thin film substrate is prevented, and a mask for X-ray exposure having high masking efficiency can be manufactured.

60. 发明专利

JP2001201842A PHASE SHIFT PHOTOMASK BLANK, PHASE SHIFT PHOTOMASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001201842A
公开(公告)日：2001-07-27
申请号：JP2000243103
申请日：2000-08-10
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： TOKU AKIHIKO , KAWADA SUSUMU , KANAI SHUICHIRO , YOSHIOKA NOBUYUKI , MAEDOKO KAZUYUKI
IPC分类号： G03F1/32 , G03F1/68 , G03F7/20 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide the phase shift photomask, capable of the satisfied examination, which can obtain sufficient transmitivity for the exposure wavelength of the sort wavelength to be used and has the suitable transmitvity also for the defective examination wavelength, and to provide phase shift photomask blanks for manufacturing the mask and the manufacturing method of the semiconductor device using this mask. SOLUTION: In a attenuated type phase shift film consisting of two layers, the refractive index of the upper film is set smaller than the refractive index of the sublayer film, the transmitivity in the exposure wavelength is set high, and in the attenuated type phase shift film consisting of three layers, the refractive index of the film of the intermediate layer is set smaller than the refractive index of the upper layer and the sublayer film, and the transmitivity in the defective examination wavelength is lowered. In the attenuated type phase shift film consisting of three-layers or more, the refractive index of the film of the uppermost layer is set smaller than the refractive index of the sublayer direct film, and the trasmitivity in the exposure wavelength is set high.

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