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1. 发明专利

JP2004153628A Device, method and program for modulation, device, method and program for demodulation, modulation and demodulation system, computer readable recording medium recorded with modulation program, and computer readable recording medium recorded with modulation program 有权
标题翻译：用于调制，调制和解调系统的装置，方法和程序，装置，方法和程序，用调制程序记录的计算机可读记录介质和与调制程序记录的计算机可读记录介质
公开(公告)号：JP2004153628A
公开(公告)日：2004-05-27
申请号：JP2002317489
申请日：2002-10-31
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAZAKI TAKUYA , FUJIWARA NOBUO
IPC分类号： H04L27/34 , H04L27/38
CPC分类号： H04L27/38 , H04L27/3405
摘要： PROBLEM TO BE SOLVED: To lower an error rate about symbols with a repetition bit mapped thereto. SOLUTION: When a coding processing part 12 of a multivalued modulation device 1 maps the repetition bit to transmission bit, the error rate can be lowered because the symbols including the repetition bit can be arranged at a signal point at four corners on a signal arrangement figure by mapping the repetition bit to a particular bit position of the symbols as a result of dividing the mapped transmission data into a plurality of symbols. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：降低与映射到其的重复位相关的符号的错误率。解决方案：当多值调制装置1的编码处理部分12将重复比特映射到传输比特时，可以降低错误率，因为包括重复比特的符号可以被布置在信号点上的四个角上通过将重复位映射到符号的特定比特位置，作为将映射的发送数据划分为多个符号的结果的信号布置图。版权所有（C）2004，JPO

2. 发明专利

JPH11233628A MANUFACTURE OF CONTACT STRUCTURE 失效
公开(公告)号：JPH11233628A
公开(公告)日：1999-08-27
申请号：JP3292598
申请日：1998-02-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUKAO TETSUHIRO , KUSUMI YOSHIHIRO , MIYATAKE HIROSHI , FUJIWARA NOBUO , SAKAMORI SHIGENORI , IIDA SATOSHI
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit and its manufacture, which prevent the contact part between a conductor part and a wire from corroding for the wiring of borderless structure. SOLUTION: An interlayer insulating film 300 having a wire-embedded hole is formed and a conductor 400 is charged in the wire-embedded hole. Then a wiring layer 500 covering the wire-embedded hole is formed on the interlayer insulating film 300, and resist 540 is used to form the wiring layer 500 in borderless structure. A barrier metal layer 510 suppresses the corrosion of the contact surface between the conductor 400 and the wiring layer 500.

3. 发明专利

JPH0969525A TREATMENT OF METALLIZATION 失效
公开(公告)号：JPH0969525A
公开(公告)日：1997-03-11
申请号：JP22344595
申请日：1995-08-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUSUMI YOSHIHIRO , FUJIWARA NOBUO , IIDA SATOSHI
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To obtain a method for treating a metallization in which the margin for corrosion can be increased. SOLUTION: A heating sample stage 15 is held at 200 deg.C and steam is introduced through a gas introduction port 19 while evacuating through an evacuation port 18 thus sustaining a specified gas pressure in a pressure reduction heating chamber 14. Upon elapse of a specified holding time, the pressure reduction heating chamber 14 is evacuated and an object 9 is carried by a vacuum carrying system 20 to a specified position on a cooling sample stage 22 in a cooling chamber 21. Subsequently, dry air or nitrogen is introduced through a gas introduction port 24 and the object 9 is held under a state of normal pressure until it is cooled down to normal temperature.

4. 发明专利

JPH08330396A EQUIPMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESSING OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH08330396A
公开(公告)日：1996-12-13
申请号：JP13658495
申请日：1995-06-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： SATO TETSUO , YASUDA TORU , IIDA SATOSHI , YONEKURA KAZUMASA , FUJIWARA NOBUO
IPC分类号： B23Q3/15 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PURPOSE: To reduce the generation of dust and suppress the nonuniformity of the processing of a wafer. CONSTITUTION: Above a wafer stage 1 for putting a semiconductor wafer 2 on it, a coil 3 is provided for an AC current to be fed there from an AC power supply 4. In the coil 3, an AC magnetic field is generated by the flowing of the AC current. This AC magnetic field induces anti-magnetic currents flowing eddy-wise along the principal surface of the semiconductor wafer 2. By the repulsive forces acting between this anti-magnetic currents and the AC magnetic field, the semiconductor wafer 2 is pressed against the wafer stage 1 in an noncontacting way. Therefore, since the pressing of the semiconductor wafer is performed in a noncontacting way, no dust is generated. Also, since the processing of the processed surface of the semiconductor wafer 2 is not disturbed because of its noncontacting pressing, the processing is performed uniformly.

5. 发明专利

JPH06151383A METHOD OF ETCHING HIGH-PERMITTIVITY MULTICOMPONENT OXIDE FILM AND REFRACTORY METAL FILM, MANUFACTURE OF THIN-FILM CAPACITOR, AND PLASMA APPARATUS FOR FILM FORMATION 失效
公开(公告)号：JPH06151383A
公开(公告)日：1994-05-31
申请号：JP30270392
申请日：1992-11-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： HANAZAKI MINORU , KUSUMI YOSHIHIRO , NANBA TAKANORI , FUJIWARA NOBUO , OKUDAIRA TOMOHITO , ITO HIROMI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108
摘要： PURPOSE:To obtain an etching method in which a high-permittivity multicomponent oxide film and refractory metal or metal compound, having a high selectivity relative to a mask can be processed by etching the multicomponent oxide film using, as an etching gas, an organic gas which produces a volatile organic metal. CONSTITUTION:Methane (CH4) that is a hydrocarbon gas is supplied to the inside of a processing chamber 5 at a rate of 500cc per minute at a gas pressure of 3mTorr. A high frequency of 13.56MHz is applied from a high frequency power source 10 at 1000W, and a magnetic field having 200G is generated by causing a current to flow through a coil 11, whereby the combination of the high frequency and the magnetic field induces a magnetron discharge to produce plasma. A PbLaZrTiO3 film 3 of the multicomponent oxide film having a high dielectric constant is etched by the plasma. At this time, the temperature of electrodes is controlled to a constant temperature, and the temperature of a wafer is 150 deg.C immediately after the completion of the etching.

6. 发明专利

JPH0628230B2 失效
公开(公告)号：JPH0628230B2
公开(公告)日：1994-04-13
申请号：JP6625487
申请日：1987-03-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , FUJIWARA NOBUO , WATAKABE YAICHIRO
IPC分类号： C23C14/14 , C23C14/06 , C23C14/34 , G03F1/22 , H01L21/027 , H01L21/30 , G03F1/16

7. 发明专利

JPH04199512A FORMATION OF PATTERN ALUMINUM ALLOY FILM 失效
公开(公告)号：JPH04199512A
公开(公告)日：1992-07-20
申请号：JP33543890
申请日：1990-11-28
申请人： APPLIED MATERIALS JAPAN , MITSUBISHI ELECTRIC CORP
发明人： FUKUYAMA TOSHIHIKO , SAWAI HISAHARU , FUJIWARA NOBUO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213
摘要： PURPOSE:To improve etching selectivity between a photoresist mask and an aluminum alloy film by performing plasma etching under coexistence of chlorine gas and gas containing bromine compound. CONSTITUTION:An aluminum.silicon.copper allay film is formed on a base substrate surface by means of sputtering for example, and normal photolithographic process is taken to form a pattern by a photo resist mask being photosensitive resin to provide a product to be processed. Mixture gas of compound gas containing chlorine and bromine and in addition compound gas containing fluorine is used in plasma etching of the aluminum alloy film formed on the surface of the base of the product to be processed. Thus etching is possible with good selectivity with the photo resist mask and etching with good accuracy at a pattern step part as well as fast etching without residual is possible.

8. 发明专利

JPH03232224A PLASMA PROCESSOR 失效
公开(公告)号：JPH03232224A
公开(公告)日：1991-10-16
申请号：JP2931190
申请日：1990-02-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： NISHIOKA KYUSAKU , SHIBANO TERUO , FUJIWARA NOBUO
IPC分类号： C23F4/00 , H01L21/205 , H01L21/302
摘要： PURPOSE:To confine any charge particles contained in discharged plasma in a magnetic field for effectively avoiding the arrival of the charged particles at a wafer thereby enabling the plasma gas in high density to be produced for accelerating the processing rate by installing a local magnetic field impression means between a plasma producer and a processing chamber. CONSTITUTION:Any discharged plasma 3 is confined in a magnetic field generated by a magnetic field impression mechanism 9 installed on the peripheral part of a discharge tube 4. Accordingly, especially the charged particles such as ions, etc., contained in the discharged plasma 3 are effectively confined in the magnetic field so that specified particles such as radicals or neutral particles, etc., may selectively reach a wafer 6 to be processed. In such a constitution, it is recommended that said magnetic field impression mechanism 9 is installed as close as possible to the plasma producer, that is, as high as possible from the discharge tube 4 so that the effect of confining the plasma gas is enhanced thus enabling the plasma gas in high density to be produced.

9. 发明专利

JPH02140914A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02140914A
公开(公告)日：1990-05-30
申请号：JP29498888
申请日：1988-11-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： YONEDA MASAHIRO , FUJIWARA NOBUO
IPC分类号： G03F1/22 , G03F1/54 , G03F7/20 , H01L21/027
摘要： PURPOSE:To obtain a method for manufacturing a semiconductor device for flattening steps located on the surface of a photoresist by changing the transmission rate of X rays according to the thickness of a mask material. CONSTITUTION:A mask 10 consists of a mask substrate 1 and mask materials 2a, 2b, and 2c. When X rays are directed onto the mask 10, they cannot pass through the thick mask material 2a, a small amount of X rays passes through the medium-thick mask material 2b and a large amount of X rays pass through the thin mask 2c. Also, nearly all X rays can pass through an area without any mask materials, thus allowing a photoresist to be strongly sensitized. Thus, by changing the thickness of the mask materials 2a, 2b, and 2c, the amount of X rays projected to a photoresist 5 can be changed and the amount to be eliminated is changed according to the difference of sensitization. As a result a photoresist film pattern 6 with a flat surface can be obtained as a photoresist after development treatment.

10. 发明专利

JPH0216731A PLASMA REACTOR 失效
公开(公告)号：JPH0216731A
公开(公告)日：1990-01-19
申请号：JP16581288
申请日：1988-07-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHIDA TOMOAKI , FUJIWARA NOBUO , NISHIOKA KYUSAKU , AKAZAWA MORIAKI , SHIBANO TERUO , KAWAI KENJI
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To make the density of plasma formation almost uniform by introducing microwaves having frequencies 100MHz-2GHz into a plasma generating chamber and making a reaction gas in the chamber cause electron cyclotron resonance. CONSTITUTION:While introducing a reaction gas into a plasma reaction chamber 1 and a plasma generating chamber 2, a part of the gas is discharged from a discharge port and a gas pressure is maintained at a prescribed value. Further, microwaves having frequencies 100MHz-2GHz in a high frequency source 3 are introduced into the plasma generating chamber 2 through a high frequency transmission path 4. Electrons of the reaction gas in the plasma generating chamber 2 are accelerated by electron cyclotron resonance and then, a high density gas plasma is generated in the plasma generating chamber 2. Then the gas plasma is moved from the plasma generating chamber 2 to the reaction chamber 1 along lines of magnetic force which are formed in magnetic coils 5 and performs treatment processes of thin film formation and etching and the like on the surface of a semiconductor substrate 9 located on a holder 8.

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