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1. 发明专利

JP2003057802A Method for manufacturing photomask, photomask obtained by the same and method for improving difference of mask pattern dimension on pattern roughness/finess 审中-公开
标题翻译：用于制造光电子的方法，由其获得的光电子图案和用于改善图案粗糙度/精细度上的掩模图形差异的方法
公开(公告)号：JP2003057802A
公开(公告)日：2003-02-28
申请号：JP2001248037
申请日：2001-08-17
申请人： Mitsubishi Electric Corp , Ulvac Seimaku Kk , アルバック成膜株式会社 , 三菱電機株式会社
发明人： MAEDOKO KAZUYUKI , ISHIZUKA MASAHIKO
IPC分类号： G03F7/11 , G03F1/20 , G03F1/68 , G03F7/38 , G03F7/40 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method to reduce dimensional difference in a resist pattern depending on the pattern roughness/finess after development caused by the fogging effect during electron beam lithography. SOLUTION: A metal film 2 and a resist layer 3 are successively deposited on a substrate 1, and a conductive film 7 is deposited on the resist layer 3. The resist layer 3 is irradiated with electron beams to form a pattern. The conductive film 7 is removed and the resist layer 3 is developed to form a resist pattern. The metal film 2 is etched by using the resist pattern 5 to form a mask pattern 6.
摘要翻译：要解决的问题：提供一种根据电子束光刻期间的起雾效果引起的显影后的图案粗糙度/光泽度来减小抗蚀剂图案的尺寸差异的方法。解决方案：金属膜2和抗蚀剂层3依次沉积在基板1上，并且导电膜7沉积在抗蚀剂层3上。用电子束照射抗蚀剂层3以形成图案。去除导电膜7，并且将抗蚀剂层3显影以形成抗蚀剂图案。通过使用抗蚀剂图案5来蚀刻金属膜2以形成掩模图案6。

2. 发明专利

JPH08262688A PHASE SHIFT PHOTOMASK BLANKS, PHASE SHIFT PHOTOMASK, AND THEIR MANUFACTURE 失效
公开(公告)号：JPH08262688A
公开(公告)日：1996-10-11
申请号：JP9140195
申请日：1995-03-24
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： ISAO AKIHIKO , KAWADA SUSUMU , HAYASHI ATSUSHI , YOSHIOKA NOBUYUKI , MAEDOKO KAZUYUKI
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PURPOSE: To provide a phase shift mask which satisfies optical characteristics and chemical resistance, has high pattern precision, and develops no pattern crack. CONSTITUTION: When phase shift films 10, 40 for shifting the phase of exposure light are formed, phase shift photomask blanks are formed with about the thickness directional center being set to a composition having a slow side etching speed S when the films are formed with a single composition, so that the difference in the side etching quantity differed in the thickness direction of the phase shift films 10, 40 is minimized, and when phase shift photomasks 35, 39 are formed by dry etching, the side surfaces of shifter parts 7, 17 are raised almost vertically from transparent bases 5, 15. The regulation of adding ratio of NO gas at sputtering suffices for the use of a molybdenum silicide oxide nitride film as the phase shift film.

3. 发明专利

JP2001201842A PHASE SHIFT PHOTOMASK BLANK, PHASE SHIFT PHOTOMASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001201842A
公开(公告)日：2001-07-27
申请号：JP2000243103
申请日：2000-08-10
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： TOKU AKIHIKO , KAWADA SUSUMU , KANAI SHUICHIRO , YOSHIOKA NOBUYUKI , MAEDOKO KAZUYUKI
IPC分类号： G03F1/32 , G03F1/68 , G03F7/20 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide the phase shift photomask, capable of the satisfied examination, which can obtain sufficient transmitivity for the exposure wavelength of the sort wavelength to be used and has the suitable transmitvity also for the defective examination wavelength, and to provide phase shift photomask blanks for manufacturing the mask and the manufacturing method of the semiconductor device using this mask. SOLUTION: In a attenuated type phase shift film consisting of two layers, the refractive index of the upper film is set smaller than the refractive index of the sublayer film, the transmitivity in the exposure wavelength is set high, and in the attenuated type phase shift film consisting of three layers, the refractive index of the film of the intermediate layer is set smaller than the refractive index of the upper layer and the sublayer film, and the transmitivity in the defective examination wavelength is lowered. In the attenuated type phase shift film consisting of three-layers or more, the refractive index of the film of the uppermost layer is set smaller than the refractive index of the sublayer direct film, and the trasmitivity in the exposure wavelength is set high.

4. 发明专利

JP2001027798A PHASE SHIFTER FILM AND PRODUCTION OF SAME 失效
公开(公告)号：JP2001027798A
公开(公告)日：2001-01-30
申请号：JP19994199
申请日：1999-07-14
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： KAWADA SUSUMU , TOKU AKIHIKO , YOSHIOKA NOBUYUKI , MAEDOKO KAZUYUKI
IPC分类号： H01L21/027 , C23C14/06 , C23C14/08 , C23C14/34 , C23C14/35 , G03F1/32 , G03F1/40 , G03F1/68 , H01L21/306 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To obtain a half tone type phase shift mask applicable for ArF laser or KrF laser by the user of molybdenum silicide by forming a phase shifter film, which is to be used for the phase shift mask, by using a reactive long slow spattering device. SOLUTION: The sputtering device is provided with a low pressure vacuum tank 3. The vacuum tank 3 has a reaction gas introducing port 14a, an inert gas introducing port 14b and a mixed gas introducing port 14c, and further, has two vacuum exhaust ports 14d and 14c, and furthermore, a target electrode 5 and a substrate holder 7. A vacuum pump is connected to the vacuum exhaust port 14d and vacuum exhaust port 14c, the target electrode 5 is provided with a magnet plate 9 having dual magnets 10, which are arranged on the double coaxial circles, on the rear surface. The substrate holder 7 is provided with a heater 11 on the rear surface. The molybenum silicide is used as a target when the film is formed.

5. 发明专利

JP2011095787A Phase shift photo mask blanks, phase shift photo mask, and method for fabricating semiconductor device 有权
标题翻译：相移片照片掩模，相移片照片掩模，以及制造半导体器件的方法
公开(公告)号：JP2011095787A
公开(公告)日：2011-05-12
申请号：JP2011033684
申请日：2011-02-18
申请人： Renesas Electronics Corp , Ulvac Seimaku Kk , アルバック成膜株式会社 , ルネサスエレクトロニクス株式会社
发明人： TOKU AKIHIKO , KAWADA SUSUMU , KANAI SHUICHIRO , YOSHIOKA NOBUYUKI , MAEDOKO KAZUYUKI
IPC分类号： G03F1/32 , G03F1/50 , G03F1/54
摘要： PROBLEM TO BE SOLVED: To provide a phase shift photo mask which has sufficient transmittance of wavelength to be used even for a short exposure light wavelength, has proper transmittance of wavelength for defect inspections to successfully achieve the inspections, to provide a phase shift photo mask blanks for fabricating the mask, and to provide a method for fabricating a semiconductor device using the mask. SOLUTION: In an attenuated type phase shift film consisting of two layers, a film refractive index and an extinction coefficient of an upper layer are made lower than those of a lower layer to increase transmittance at an exposure light wavelength. In an attenuated type phase shift film consisting of three layers, a film refractive index and an extinction coefficient of an intermediate layer are made lower than those of an upper layer and a lower layer to reduce transmittance at the defect examination wavelength. In an attenuated type phase shift film consisting of three or more layers, a film refractive index and an extinction coefficient of the uppermost layer are made lower than a film refractive index of a layer just under the uppermost layer to increase transmittance at the exposure light wavelength. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供即使对于短曝光光波长也具有足够的波长透射率的相移光掩模，对于缺陷检查具有适当的波长透射率以成功地实现检查，以提供相位用于制造掩模的移位光掩模坯料，并提供使用该掩模制造半导体器件的方法。解决方案：在由两层构成的衰减型相移膜中，使上层的膜折射率和消光系数低于下层的折射率和消光系数，以增加曝光光波长的透射率。在由三层组成的衰减型相移膜中，使中间层的膜折射率和消光系数低于上层和下层的折射率和消光系数，以降低缺陷检查波长处的透射率。在由三层或更多层组成的衰减型相移膜中，使最上层的膜折射率和消光系数低于刚好在最上层的层的膜折射率，以增加曝光光波长的透射率。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JPH1069054A PHOTOMASK AND ITS PRODUCTION 失效
公开(公告)号：JPH1069054A
公开(公告)日：1998-03-10
申请号：JP22394196
申请日：1996-08-26
申请人： MITSUBISHI ELECTRIC CORP , RYODEN SEMICONDUCTOR SYST ENG
发明人： TANAKA SHINICHIRO , SUZUKI KAZUTO , SEKI MASAMITSU , YOSHIOKA NOBUYUKI , AOYAMA SATORU , NAGAMURA YOSHIKAZU , MAEDOKO KAZUYUKI
IPC分类号： G03F1/40 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To prevent the damage by the electric discharge of the metallic films on a photomask and to improve reliability by forming conductive connection patterns for connecting the separated patterns of the metallic films to each other of a fine width which is not transferable. SOLUTION: The metallic films 13a, 13b separated by dicing lines 12 are formed on a substrate 11. An org. gas 15 as, for example, carbonyl gas contg. carbon, is thereafter blown to the surface of the substrate 11 and the substrate 11 is irradiated with an integrated ion beam 16 of gallium, etc., from above, by which the conductive films formed of the carbon are deposited by evaporation and connection patterns 14 are formed. The metallic films 13a, 13b formed to be separated to an inner side and an outer side by the dicing lines 12 in such a manner are electrically connected by the connection patterns 14. The connection patterns 14 are formed to the wire shape of the fine width. The width of the connection patterns 14 is set at the size below the resolution threshold at the time of transferring the patterns by a photolithography technique.

7. 发明专利

JP2003233189A MASK BLANK, PROTECTIVE FILM USED THEREFOR, AND PATTERN FORMING METHOD FOR MASK BLANK 审中-公开
公开(公告)号：JP2003233189A
公开(公告)日：2003-08-22
申请号：JP2002033928
申请日：2002-02-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUMADA TERUHIKO , FUJINO ATSUKO , MAEDOKO KAZUYUKI
IPC分类号： G03F7/039 , G03F1/50 , G03F1/54 , G03F7/11 , H01L21/027 , G03F1/08 , G03F1/14
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method excellent in dimensional stability. SOLUTION: A light shielding body 2 is disposed on a substrate 1 and a chemically amplified resist film 3 on this light shielding body 2. The resist film 3 is based on a first resin which is made alkali-soluble by the action of an acid and contains a photoacid generator which generates an acid upon irradiation with a radiation 4. A protective film 5 is then disposed on the resist film 3 to form the objective mask blank. The protective film 5 is formed by coating with a solution prepared by dissolving a second resin and the above photoacid generator in a solvent which does not substantially dissolve the resist film 3. The mask blank is patternwise irradiated with the radiation 4, the protective film 5 is dissolved and removed with a solvent which does not substantially dissolve the resist film 3, and the resist film 3 is developed to form a pattern. COPYRIGHT: (C)2003,JPO

8. 发明专利

JP2003173014A METHOD OF MANUFACTURING PHASE SHIFT MASK, PHASE SHIFT MASK AND DEVICE 审中-公开
公开(公告)号：JP2003173014A
公开(公告)日：2003-06-20
申请号：JP2001373666
申请日：2001-12-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEDOKO KAZUYUKI
IPC分类号： G03F1/32 , G03F1/54 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a phase shift mask which makes the discovery of the defect produced in a phase shift layer possible in an early stage of a manufacturing process, a phase shift mask manufactured by this method for manufacturing the phase shift mask and a device manufactured by the phase shift mask. SOLUTION: After a step of forming the phase shift layer by which the phase shift layer 2 is formed on a transparent substrate 1, a step of forming a light shielding film for forming a Cr film 6A as a light shielding film in the prescribed regions on the phase shift layer 2 is performed. COPYRIGHT: (C)2003,JPO

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