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1. 发明专利

JPS5986226A CLEANING DEVICE FOR THIN PLATE MATERIAL 失效
公开(公告)号：JPS5986226A
公开(公告)日：1984-05-18
申请号：JP19720782
申请日：1982-11-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： HOSHIKA HARUYUKI
IPC分类号： B08B11/04 , B08B1/04 , B08B3/02 , G03F1/00 , G03F1/82 , H01L21/00 , H01L21/304
摘要： PURPOSE:To effectively remove the contamination without losing the surface of a thin film material by injecting pure water which is supplied into a tubular shaft while rotating a guide at a high speed by the shaft to clean off the surface of the material. CONSTITUTION:A pair of sponge units 13 which communicate from inside bore side to outside bore side at numerous spongy clearances in a cylindrical shape are respectively engaged fixedly with tubular shafts 10. The shaft 10 is formed of metal material of synthetic resin material such as Teflon, and many pores 11 which has approx. 5mm. in diameter are opened. Superpure water 14 is supplied from below to the shaft 10, flowed from the pores 11 into the spongy units 13 and injected at both side from the outside bore sides. Both shafts 10 are rotated at a high speed such as approx. 3,000rpm to clean it, thereby rotating the spongy units 13. Thus, the superpure water 14 is injected by a centrifugal force from the outer bore side of the units 13 which rotate at high speed to collide with both side surfaces of a glass mask 1 which moves relatively in parallel with the units 13, thereby cleaning of the adhered contamination.

2. 发明专利

JPS5643727A PATTERN FORMATION ON FILM TO BE ETCHED 失效
公开(公告)号：JPS5643727A
公开(公告)日：1981-04-22
申请号：JP11951879
申请日：1979-09-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAZAKI TERUHIKO , HOSHIKA HARUYUKI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To prevent deformation of resist pattern due to a rise in temperature by a method wherein a photo resist of prescribed pattern is formed on a film where an etching will be performed and the section to be etched is cooled when a plasma- etching is performed using a photo resist as a mask. CONSTITUTION:Two-layer film to be etched, such as chrome film and chrome oxide film, are formed on a glass substrate and a photomask material sample 4 having a photoresist pattern formation is fixed on a cooling sample table made of glass or the like, with a flow of cooling water, when the sample 4 is placed in a reaction tube 5 of a plasma etching device and an etching is performed. As a result, the deformation of a resist pattern image due to thermal resolution and softening of photoresist film, arising from a rise in temperature of the etched material by an etching reaction heat and a high-frequency power, is prevented and a highly precise fine pattern film can be formed.

3. 发明专利

JPH0562887A MASK FOR EXPOSURE WITH X-RAY 失效
公开(公告)号：JPH0562887A
公开(公告)日：1993-03-12
申请号：JP3091791
申请日：1991-02-26
申请人： RYODEN SEMICONDUCTOR SYST ENG , MITSUBISHI ELECTRIC CORP
发明人： HOSHIKA HARUYUKI
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To accurately transfer a circuit pattern by eliminating stay of the air between a mask substrate and a substrate to be exposed, disposed in the vicinity when a mask for exposing with an X-ray is moved vertically and horizontally and aligned and suppressing a deformation of the mask substrate due to the action of a pneumatic pressure. CONSTITUTION:The mask 1 for exposing with an X-ray comprises a mask substrate 12 formed with a mask pattern 11 and disposed in the vicinity in parallel with a substrate 15 to be exposed, and a supporting ring 2 for fixedly supporting the outer peripheral edge of the substrate 12. An oblique surface 3 of an externally enlarged shape directed from the surface 2a of the substrate to be exposed to the outer end face 2b is formed on the outer peripheral end of the ring 2, and a plurality of through holes 4 formed along the thickness direction of the ring 2 are formed at its body.

4. 发明专利

JPS6226175B2 失效
公开(公告)号：JPS6226175B2
公开(公告)日：1987-06-08
申请号：JP19720782
申请日：1982-11-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： HOSHIKA HARUYUKI
IPC分类号： B08B11/04 , B08B1/04 , B08B3/02 , G03F1/00 , G03F1/82 , H01L21/00 , H01L21/304

5. 发明专利

JPS6212913B2 失效
公开(公告)号：JPS6212913B2
公开(公告)日：1987-03-23
申请号：JP19828081
申请日：1981-12-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： HOSHIKA HARUYUKI
IPC分类号： G03F1/00 , G03F1/48 , G03F1/54 , H01L21/027

6. 发明专利

JPS61110431A X-ray exposure mask 失效
标题翻译： X-RAY曝光面膜
公开(公告)号：JPS61110431A
公开(公告)日：1986-05-28
申请号：JP23154284
申请日：1984-11-02
申请人： Mitsubishi Electric Corp
发明人： ISHIO NORIAKI , HOSHIKA HARUYUKI , SUZUKI YOSHIKI , YOSHIOKA NOBUYUKI , CHIBA AKIRA
IPC分类号： G03F1/00 , G03F1/22 , G03F1/68 , H01L21/027 , H01L21/30
CPC分类号： H01L21/30
摘要： PURPOSE:To obtain an X-ray exposure mask with high contrast which is not exfoliated even when thickness of mask absorbing layer is increased by providing the X-ray absorbing layer in such a shape of which direct projected images match to both surfaces of mask substrate. CONSTITUTION:A wafer coated with the resist for X-ray is placed at the lower part of paper surface, then it is irradiated with the X-ray, for example, such as synchrotron irradiation beam having very high parallerism toward the lower part from the upper part of paper. Thereby, since the respective vertical projection images of the gold films 4a, 4b of the pair of upper and lower X-ray absorbing layers match, the image does not doubled, sharp shadows of gold films 4a, 4b are formed on the resist for X-ray. The other portions are exposed by the X-ray which has passed the silicon nitride films 2, 8a, 8b and polyimide films 7a, 7b which allows the X-ray to pass well. These satisfy the conditions required for the mask and effective thickness of X-ray absorbing layer combining the upper and lower part is about two times the existing thickness and transmissivity is reduced in the rate of exponential function of thickness. Therefore, the absorption coefficient is ranges 98-99% and thereby the X-ray exposure mask having remarkably high contrast can be obtained.
摘要翻译：目的：为了获得具有高对比度的X射线曝光掩模，即使当掩模吸收层的厚度增加时，通过以直接投影图像与掩模基板的两个表面匹配的形式提供X射线吸收层，其也不会剥离。构成：将涂布有X射线抗蚀剂的晶片放置在纸面的下部，然后用X射线照射例如具有非常高的parallerism的同步加速器照射束朝向下部的上部纸张。由此，由于上下一对X射线吸收层的金膜4a，4b的各垂直投影图像一致，因此图像不加倍，因此在抗蚀剂X上形成金膜4a，4b的锐利阴影 -射线。其他部分通过已经通过氮化硅膜2,8a，8b的X射线和允许X射线良好的聚酰亚胺膜7a，7b曝光。这些满足掩模所需的条件，并且组合上部和下部的X射线吸收层的有效厚度约为现有厚度的两倍，并且透射率在厚度的指数函数率上降低。因此，吸收系数在98-99％的范围内，因此可以获得具有非常高的对比度的X射线曝光掩模。

7. 发明专利

JPS57109368A SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPS57109368A
公开(公告)日：1982-07-07
申请号：JP18880480
申请日：1980-12-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： HOSHIKA HARUYUKI , KATOU TAKAAKI
IPC分类号： H01L27/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PURPOSE:To increase junction capacitance without making any larger the plane area of an N diffusion layer by forming a junction surface between the N diffusion layer and a substrate uneven to make the junction area larger. CONSTITUTION:Depletion layers formed by the P-N junctions of the first poly- silicon layer 4 and an N diffusion layer 8, and the diffusion layer 8 and a substrate 1, serve as capacitors. A junction surface 9 between the diffusion layer 8 and the substrate 1 right under the silicon layer 4 has an uneven surface. This increases the junction capacitance by making an overall junction area larger within the same plane area without interfering with minimizing the device.

8. 发明专利

JPS5466130A EMULSION PHOTOMASK 失效
公开(公告)号：JPS5466130A
公开(公告)日：1979-05-28
申请号：JP13290577
申请日：1977-11-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： AKASAKA YOUICHI , HOSHIKA HARUYUKI , YAMAZAKI TERUHIKO
IPC分类号： G03C5/00 , G03F1/00 , G03F1/56 , G03F1/68 , H01L21/027
摘要： PURPOSE:To enhance durability of an emulsion photomask for use in photomechnical process, by hardening a glass mask having a pattern formed by exposing a silver halide emulsion coated on a glass substrate, developing and fixing it, by ion injection. CONSTITUTION:A silver halide emulsion is coated on the surface of glass substrate 1 in a thickness of 5-6 mu, and an emulsion photomask is formed consisting of pattern 2 for use in a semiconductive device obtained by leaving a silver particle layer by the ordinary photographic method, and an emulsion layer 3 consisting of gelatin, etc.. Ions are injected to all the surface of this photomask to harden the surfaces of silver particles layer 2 and emulsion layer 3 and to form hrdened layer 5. An example of the ion injection conditions are as follows: Argon is injected in an acceleration voltage of about 20 KeV or less, in an injection amount below about 20 KeV, and in an injection current below about 100 mu A.

9. 发明专利

JPS5461478A CHROMIUM PLATE 失效
公开(公告)号：JPS5461478A
公开(公告)日：1979-05-17
申请号：JP12828077
申请日：1977-10-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： NISHIOKA KIYUUSAKU , KANEDAKI YUKIMICHI , YAMADA MITSURU , UNO JIYUN , HOSHIKA HARUYUKI , YAMAZAKI TERUHIKO
IPC分类号： H01L21/302 , G03F1/00 , G03F1/54 , H01L21/027 , H01L21/3065
摘要： PURPOSE:To enable negative and positive inversion in the stage of etching, by coating the oxide chromium film including high melting point metal such as chromium film as the first layer and tungsten for the second layer on the transparent subsstrate. CONSTITUTION:The chromium oxide film 5 is coated on the transparent substrate 1 for the chromium film 2 for the first layer and tungsten as the second layer. Further, after forming the mask 4, when gas plasma etching is made, the chromium film 2 under the mask 4 and the chromium oxide film 5 including tungsten are etched and no etching is made for the part of the surface exposed.

10. 发明专利

JPH0232524A X-RAYS EXPOSURE MASK 失效
公开(公告)号：JPH0232524A
公开(公告)日：1990-02-02
申请号：JP18401488
申请日：1988-07-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： HOSHIKA HARUYUKI , TAKEUCHI HIROSHI , HOSONO KUNIHIRO
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To obtain a highly accurate mask pattern easily by overlapping an X-rays transmission type non-metal mask onto an X-rays transmission type substrate and providing a protection film made of Z-rays absorption material. CONSTITUTION:Photoresist is applied to a substrate 2 and a projecting pattern 3 is produced by changing the amount of illumination with an electronic beam. It is covered with a protection film of Mo4, a photoresist 5 is applied to it, the Mo4 on the mask pattern 3 is exposed, this area is etched back, and an X-rays exposure mask 1 of the flat surface is completed. With this configuration, a highly accurate mask pattern can be obtained easily. When X-rays A is irradiated to an Si substrate 6 coated with a positive type resist 7 through this mask 1 and development is made, a T-type pattern which is opposite to the mask pattern 3 is formed being based on the difference in the amount of absorption of X-rays. Performing deposition of an electrode 8 and removing the resist 7 allows a T-type electrode 8 to be obtained.

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