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1. 发明专利

JPS6286723A MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPS6286723A
公开(公告)日：1987-04-21
申请号：JP22717685
申请日：1985-10-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , SUZUKI YOSHIKI
IPC分类号： G03F1/00 , G03F1/22 , G03F1/50 , G03F1/84 , H01L21/027 , H01L21/30
摘要： PURPOSE:To form the title mask for X-ray exposure structure with excellent bonding power of X-ray absorbing patterns with a mask substrate as well as long life by a method wherein silicide layers made of absorbing pattern material are junction-formed between X-ray absorbing patterns made of heavy metal and the mask substrate. CONSTITUTION:A silicon nitride film to be a mask substrate 2 is formed on a silicon substrates 1 by pressure-reduced CVD process and then tantalum silicide layers 4 are formed on the overall surface of nitride film 2 by sputtering process etc. Successively tantalum layers to be X-ray absorbing patterns 3 are formed by sputtering process further forming resist layers by spin-coating process. Any specified resist patterns can be formed by exposing and developing the resist layers using electron beams. Finally the tantalum layers and then the silicide layers are etched by reactive ion etching process using the resist patterns as masks to form the specified X-ray absorbing patterns.

2. 发明专利

JPS61110431A X-ray exposure mask 失效
标题翻译： X-RAY曝光面膜
公开(公告)号：JPS61110431A
公开(公告)日：1986-05-28
申请号：JP23154284
申请日：1984-11-02
申请人： Mitsubishi Electric Corp
发明人： ISHIO NORIAKI , HOSHIKA HARUYUKI , SUZUKI YOSHIKI , YOSHIOKA NOBUYUKI , CHIBA AKIRA
IPC分类号： G03F1/00 , G03F1/22 , G03F1/68 , H01L21/027 , H01L21/30
CPC分类号： H01L21/30
摘要： PURPOSE:To obtain an X-ray exposure mask with high contrast which is not exfoliated even when thickness of mask absorbing layer is increased by providing the X-ray absorbing layer in such a shape of which direct projected images match to both surfaces of mask substrate. CONSTITUTION:A wafer coated with the resist for X-ray is placed at the lower part of paper surface, then it is irradiated with the X-ray, for example, such as synchrotron irradiation beam having very high parallerism toward the lower part from the upper part of paper. Thereby, since the respective vertical projection images of the gold films 4a, 4b of the pair of upper and lower X-ray absorbing layers match, the image does not doubled, sharp shadows of gold films 4a, 4b are formed on the resist for X-ray. The other portions are exposed by the X-ray which has passed the silicon nitride films 2, 8a, 8b and polyimide films 7a, 7b which allows the X-ray to pass well. These satisfy the conditions required for the mask and effective thickness of X-ray absorbing layer combining the upper and lower part is about two times the existing thickness and transmissivity is reduced in the rate of exponential function of thickness. Therefore, the absorption coefficient is ranges 98-99% and thereby the X-ray exposure mask having remarkably high contrast can be obtained.
摘要翻译：目的：为了获得具有高对比度的X射线曝光掩模，即使当掩模吸收层的厚度增加时，通过以直接投影图像与掩模基板的两个表面匹配的形式提供X射线吸收层，其也不会剥离。构成：将涂布有X射线抗蚀剂的晶片放置在纸面的下部，然后用X射线照射例如具有非常高的parallerism的同步加速器照射束朝向下部的上部纸张。由此，由于上下一对X射线吸收层的金膜4a，4b的各垂直投影图像一致，因此图像不加倍，因此在抗蚀剂X上形成金膜4a，4b的锐利阴影 -射线。其他部分通过已经通过氮化硅膜2,8a，8b的X射线和允许X射线良好的聚酰亚胺膜7a，7b曝光。这些满足掩模所需的条件，并且组合上部和下部的X射线吸收层的有效厚度约为现有厚度的两倍，并且透射率在厚度的指数函数率上降低。因此，吸收系数在98-99％的范围内，因此可以获得具有非常高的对比度的X射线曝光掩模。

3. 发明专利

JPS6083942A MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPS6083942A
公开(公告)日：1985-05-13
申请号：JP19289183
申请日：1983-10-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHIO NORIAKI , YOSHIOKA NOBUYUKI , SUZUKI YOSHIKI
IPC分类号： G03F1/00 , G03F1/60 , H01L21/027
摘要： PURPOSE:To shorten exposure time, to improve the mechanical strength of an X-ray transmitting substrate, and to enable the formation of a fine gold pattern by using a substrate having a two-layered structure consisting of a thin film of a beryllium compound and a thin film of an org. material as the X-ray transmitting substrate. CONSTITUTION:A substrate having a two-layered structure consisting of a thin film 5 of a beryllium compound and a thin film 6 of an org. material such as polyimide is used as an X-ray transmitting substrate. By applying the two-layered structure consisting of the film 5 having high X-ray transmittance and the film 6 as a reinforcing film, exposure time can be shortened, and the mechanical strength is improved to prevent the deformation or damage of a gold pattern, so a fine gold pattern can be formed.

4. 发明专利

JPS594858B2 JPS594858B2 - 失效
公开(公告)号：JPS594858B2
公开(公告)日：1984-02-01
申请号：JP12882178
申请日：1978-10-17
申请人： Mitsubishi Electric Corp
发明人： SUZUKI YOSHIKI , YAMAZAKI TERUHIKO , UNO JUN , AKASAKA YOICHI
IPC分类号： H01L21/3213 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L23/52

5. 发明专利

JPS57161067A DRY ETCHING METHOD FOR ALUMINUM FILM 失效
公开(公告)号：JPS57161067A
公开(公告)日：1982-10-04
申请号：JP4687281
申请日：1981-03-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUZUKI YOSHIKI , YAMAZAKI TERUHIKO
IPC分类号： C23F4/00 , C23F1/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To form fine electrode or wiring patterns by heating a semiconductor substrate stuck with an Al film via an insulation coating layer to prescribed temp. then etching the same dry. CONSTITUTION:An Al layer is formed on a semiconductor substrate applied with an insulation film. Next, the sample 1 formed with the Al layer is put in a furnace, and a coil 3 for heating electrode is energized to heat the sample 1. When the sample 1 subjected to evacuation is controlled to prescribed temp., etching is started by flowing a gas and conducting electricity to a high frequency electric power source 4. The sample 1 is heated to a high temp. state, whereby the delay in the time for starting the etching is reduced and the fine electrode and wiring patterns are formed.

6. 发明专利

JPS5749231A Forming method for electrode and wiring layer 失效
标题翻译：电极和布线层的形成方法
公开(公告)号：JPS5749231A
公开(公告)日：1982-03-23
申请号：JP12559480
申请日：1980-09-09
申请人： Mitsubishi Electric Corp
发明人： YAMAZAKI TERUHIKO , SUZUKI YOSHIKI , WATAKABE YAICHIROU
IPC分类号： H01L23/52 , H01L21/28 , H01L21/3205 , H01L21/3213
CPC分类号： H01L21/32136
摘要： PURPOSE:To facilitate the formation of an electrode wiring layer by forming the second metallic film readily bromided with Ti or the like on an aluminum layer, selectively etching the second metallic film with bromine gas plasma and removing the aluminum layer with chlorine gas plasma. CONSTITUTION:A hole is opened at the oxidized film 2 on the surface of a substrate 1 formed with an active region 4 to expose the region 4, and aluminum film 3 is formed on the overall surface. A Ti film 5 (or Nb, Ta, Au, Mo bromide is readily formed as a metallic layer) is, for example, formed thinly consecutively onto the film 3. With the resist pattern 5 as a mask it is etched with plasma with Br2 gas to etch the film 5, and then the film 3 is etched with plasma with CCl4 gas of diluted Ar. Thus, it can prevent the formation of alumina on the film 3, thereby facilitating the formation of aluminum electrode wire by plasma etching.
摘要翻译：目的：为了通过在铝层上形成易于用Ti等进行溴化的第二金属膜来促进电极布线层的形成，用溴气等离子体选择性蚀刻第二金属膜，用氯气等离子体除去铝层。构成：在形成有活性区域4的基板1的表面上的氧化膜2上开孔，露出区域4，在整个面上形成铝膜3。例如，将薄膜5（或Nb，Ta，Au，Mo溴化物容易地形成为金属层）薄薄地连续地形成在膜3上。以抗蚀剂图案5作为掩模，用Br2等离子体蚀刻气体蚀刻薄膜5，然后用稀释的Ar的CCl 4气体用等离子体蚀刻薄膜3。因此，可以防止在膜3上形成氧化铝，从而通过等离子体蚀刻形成铝电极线。

7. 发明专利

JPS5534694A MASK PLATE 失效
公开(公告)号：JPS5534694A
公开(公告)日：1980-03-11
申请号：JP10931878
申请日：1978-09-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUZUKI YOSHIKI , UNO JIYUN , AKASAKA YOUICHI , YAMAZAKI TERUHIKO
IPC分类号： C23F4/00 , C23F1/02 , H01L21/027
摘要： PURPOSE:The mask plate simply manufacturable through the reverse etching process, by forming a thin layer on the thin films of an opaque substance and the oxide film being previously formed on the transparent substrate; hereupon, above thin layer is specified to include the same opaque substance and the oxide as above, and being additionally including another element of atomic weight heavier than that of those substances. CONSTITUTION:On the transparent substrate 1, three thin films 2, 3, 6, are formed as follows; the first layer of Cr thin film 2 for example, the second layer of chrome oxide thin film 3, and the high melting point metal layer of chrome oxide thin film 6 including W for example. The rate of injection of W-ion at the thin 6 is specified to more than 10 /cm . Thicknesses of these thin films are specified as follows; the film 2 about 500-1000Angstrom , the film 3 about 100-300Angstrom , and the film 6 about 50- 100Angstrom . Onto the film 6 the photoresist 4 is attached, and the resist 4 is provided with required opening 5 for use of the etching mask. Next, to this composite film the plasma gas etching is applied using the gas including CCl4, N2, O2 for instance; hereby, the reverse etching is executed remaining respective thin films 2, 3, 6, at the position corresponding to the opening 5.

8. 发明专利

JPS6287954A FORMATION OF PATTERN 失效
公开(公告)号：JPS6287954A
公开(公告)日：1987-04-22
申请号：JP22930785
申请日：1985-10-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUZUKI YOSHIKI , YOSHIOKA NOBUYUKI , ISHIO NORIAKI
IPC分类号： G03F7/20 , G03F7/038 , G03F7/30 , G03F7/32 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve definition and dry etching resistance by forming a thin film consisting of an X-ray sensitive resist on a substrate and irradiating specific X-rays of a long wavelength on the film, then developing the same with a specific developing solvent. CONSTITUTION:The thin film of the X-ray sensitive resist consisting of the chlorinated polymethyl styrene having 10-40% rate of chlorination and 400,000-700,000 weight average mol. wt. is formed on the substrate and the specific X-rays of the wavelength longer than the wavelength at the K adsorption end of chlorine is irradiated onto the thin film; thereafter, the thin film is developed with the developing solvent contg. ethoxyethanol and/or methyoxyethanol. The sensitivity of the chlorinated polymethyl styrene for Alkalpha rays increases with an increase in the rate of chlorination between 0-10% rate of chlorination and the sensitivity hardly changes even if the rate of chlorination is increased at >=10% as shown in the figure. The pattern of a submicron region is thereby satisfactorily formed.

9. 发明专利

JPS61111532A X-ray mask 失效
标题翻译： X-RAY面膜
公开(公告)号：JPS61111532A
公开(公告)日：1986-05-29
申请号：JP23475584
申请日：1984-11-05
申请人： Mitsubishi Electric Corp
发明人： YOSHIOKA NOBUYUKI , HOSHIKA HARUYUKI , SUZUKI YOSHIKI , ISHIO NORIAKI , CHIBA AKIRA
IPC分类号： G03F1/00 , G03F1/22 , G03F1/68 , H01L21/027 , H01L21/30
CPC分类号： H01L21/30
摘要： PURPOSE:To contrive to improve the positional accuracy and the pattern size accuracy by eliminating the positional shift of transcription patterns by a method wherein X-ray absorber pattern is arranged on its supporting substrate by being previously corrected with the reference of the center of an X-ray mask. CONSTITUTION:The X-ray mask 2A is formed on an X-ray absorber pattern supporting substrate 3 by being corrected so that the X-ray absorber pattern 4 and the position H of the pattern transcribed on a X-ray-sensitive resist film 6 on a wafer substrate 7 may come to a desired position. Using this X-ray mask 2A, exposure is carried out by making the center C of the mask 2A coincident with the center B of an X-ray source 1 with high accuracy. Next, the wafer substrate 7 is aligned with the X-ray mask 2A by alignment using a Fresnel zone target, thus keeping the mask 2A and the wafer substrate 7 at a required interval (d) from each other. Finally, the X-ray-sensitive resist film 6 is exposed by irradiation with an X-ray a from the X-ray source 1 to the X-ray mask 2A.
摘要翻译：目的：为了通过以下方法消除转录图案的位置偏移来提高位置精度和图案尺寸精度：其中X射线吸收体图案通过预先校正为X的中心的参考而被布置在其支撑衬底上射线面具构成：通过对X射线吸收体图案支持基板3进行修正而形成X射线掩模2A，使得X射线吸收体图案4和X射线敏感性抗蚀剂膜6上转印的图案的位置H 在晶片衬底7上可能会到达所需位置。使用该X射线掩模2A，通过使掩模2A的中心C高精度地与X射线源1的中心B重合来进行曝光。接下来，通过使用菲涅尔区域靶对准使晶片基板7与X射线掩模2A对准，从而将掩模2A和晶片基板7保持在彼此所需的间隔（d）。最后，通过从X射线源1向X射线掩模2A照射X射线a使X射线敏感性抗蚀剂膜6曝光。

10. 发明专利

JPS59202633A Pattern inspecting device 失效
标题翻译：图案检查装置
公开(公告)号：JPS59202633A
公开(公告)日：1984-11-16
申请号：JP7695383
申请日：1983-04-30
申请人： Mitsubishi Electric Corp
发明人： SUZUKI YOSHIKI , NAKADA HIDEFUMI
IPC分类号： G01N21/88 , G01N21/93 , G01N21/956 , G03F1/84 , H01L21/027 , H01L21/30 , H01L21/66
CPC分类号： H01L21/30
摘要： PURPOSE:To enable to perform the pattern defect inspection of a mask (reticle) with high precision and simply by a method wherein a pattern inspecting device consists of two inspecting stations provided with an X-Y table, a light-emitting part and a light-receiving part, and converters a comparator to compare electric signals and a stage control part. CONSTITUTION:A placing table 5 placing a mask (reticle) 4, which is a sample to be inspected, thereon, has been mounted on the X-Y table 3 of the first inspecting station I . Moreover, a flying spot scanner 6, which is a light-emitting part, has been arranged over the placing table 5, while a photomultiplier 7, which is a light-receiving part, has been arranged in the lower direction thereof. A reference mask (reticle) 9 having a pattern for comparison is placed on the placing table 5 of the second inspecting station II having the same mechanism as that of the first inspecting station 1 and the optical image of the reference mask (reticle) 9 is converted into an electric signal by a converter 8. Electric signals obtained from the mask (reticle) 4, which is a sample to be inspected, and the reference mask (reticle) 9 are compared by a comparator 10 and a difference signal, that is, a signal of pattern defect is extracted.
摘要翻译：目的：为了能够高精度地执行掩模（掩模版）的图案缺陷检查，并且简单地通过一种方法，其中图案检查装置由设有XY工作台，发光部分和光接收的两个检查台组成部分，并转换比较器以比较电信号和级控制部分。构成：在第一检查台I的X-Y台3上安装了放置在其上的要检查的样品的掩模（掩模版）4的放置台5。此外，作为发光部的飞点扫描器6已经布置在放置台5的上方，而作为光接收部的光电倍增管7沿其下方布置。将具有比较图案的基准掩模（掩模版）9放置在具有与第一检查台1相同的机构的第二检查台II的放置台5上，并且参考掩模（掩模版）9的光学图像为通过转换器8转换成电信号。通过比较器10和差分信号比较从作为被检查样本的掩模（掩模版）4和参考掩模（掩模版）9）获得的电信号，即差信号，即，提取出图案缺陷的信号。

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