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1. 发明专利

JPH0682604B2 失效
公开(公告)号：JPH0682604B2
公开(公告)日：1994-10-19
申请号：JP19570687
申请日：1987-08-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEUCHI SUSUMU , YOSHIOKA NOBUYUKI
IPC分类号： G03F1/00 , G03F1/22 , G03F1/84 , G03F1/86 , H01L21/027 , G03F1/16

2. 发明专利

JPH05127365A PHASE SHIFT RETICLE DEFECT INSPECTION DEVICE 失效
公开(公告)号：JPH05127365A
公开(公告)日：1993-05-25
申请号：JP28839791
申请日：1991-11-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEUCHI SUSUMU
IPC分类号： G03F1/30 , G03F1/84 , H01L21/027
摘要： PURPOSE:To inspect a phase shift reticle for defects with good accuracy without transferring to a semiconductor substrate, using an actual transferring device and to realize the reduction in inspection work time and price. CONSTITUTION:The desired pattern housed in a magnetic memory 1 is given bit map extension to form a 2-image signal. When light penetrates a phase shift reticle 6, an image is formed on an image detector 8 to become an image signal by a magnifying projection lens 7 having the same optical lens transferring property as that of an actual transferring device. After both image signals are given an image processing 9 and a dislocation correction 11, defects on the reticle is detected (12).

3. 发明专利

JPH05107726A VERIFICATION DEVICE FOR DESIGN DATA ON PHASE SHIFT MASK 失效
公开(公告)号：JPH05107726A
公开(公告)日：1993-04-30
申请号：JP27257991
申请日：1991-10-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEUCHI SUSUMU
IPC分类号： G03F1/00 , G03F1/30 , G03F1/68 , H01L21/027 , H01L21/30
摘要： PURPOSE:To easily verify the design data on the phase shift mask for semiconductor integrated circuit transfer at low cost in a short time without actually manufacturing any mask. CONSTITUTION:A desired pattern is processed by a bit map expanding circuit 1 and stored in a memory circuit 2. The light shield pattern and shifter pattern of the phase shift mask are processed by bit map expanding circuits 3 and 4 respectively and stored in memory circuits 5 and 6. Both image signals are put together by a memory circuit 7 and processed by a mask optical image forming circuit 8 into an optical image, which is stored in a memory circuit 9. A comparative arithmetic circuit 10 verifies images of both the memory circuits 2 and 9.

4. 发明专利

JPH02271608A X-RAY TRANSFER MASK 失效
公开(公告)号：JPH02271608A
公开(公告)日：1990-11-06
申请号：JP9373889
申请日：1989-04-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEUCHI SUSUMU , MORIIZUMI KOICHI
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To prevent an X-ray transmission thin film from warping by a method wherein a running hole opened inside and outside is provided on a support ring while a reinforcing thin film for transmitting X-rays is provided for closing an opening on the opposite side of the X-ray transmission thin film. CONSTITUTION:A support ring 11 for supporting an X-ray transmission thin film 1 comprises two rings 12,13, an upper ring and a lower ring, having inner holes 12a,13a expanding toward a side where the respective rings are joined to each other, wherein on a joint face on the lower ring side of the upper ring 12 a plurality of U-shaped grooves 14 extending along the diameter are provided, These U-shaped grooves are constituted so that they function as small running holes opened inside and outside of the support ring 11 when both rings 12,13 are joined. A reinforcing thin film 15 for transmitting X-rays is provided on the upper ring 12 of both rings 12, 13 so that an opening on the opposite side to the h,ray transmission thin film 1 is closed. Thus the X-ray transmission thin film 1 can be prevented from warping when a mask is moved thereby obtaining a highly precise pattern at the time of pattern transfer.

5. 发明专利

JPS6459750A DEFECT INSPECTION AND CORRECTION DEVICE FOR ELECTRON BEAM PATTERN 失效
公开(公告)号：JPS6459750A
公开(公告)日：1989-03-07
申请号：JP21591687
申请日：1987-08-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEUCHI SUSUMU , SADAHIRO SHIGEKI
IPC分类号： H01L21/66 , G01B15/00 , G01N23/203 , H01J37/06 , H01J37/28
摘要： PURPOSE:To enable the high-precision inspection of a pattern and the correction of high throughput by controlling the temperature of an inspected sample and exciting a gas for correction via the irradiation of far ultraviolet rays having the predetermined intensity. CONSTITUTION:A sample 27 is compared with a reference pattern formed via a pattern generation part 40 by the irradiation of an electron beam 9, and the defective part thereof is detected and corrected. Far ultraviolet rays generated by a lamp 36 are irradiated upon the sample 27 via a light guide wave passage 35. A sample stage 23 is subjected to a temperature fluctuation via a temperature control part 26 and a stage heating/cooling part 25, and the sample is thereby kept at a temperature adequate for inspection and correction. A gas having specific characteristics is supplied from a gas supply source to the sample 27 via a gas flow controller 33 and excited up to a point immediate before the decomposition reaction thereof, using the irradiation of the far ultraviolet rays. According to the aforesaid system, highprecision inspection and high throughput correction are made with an electron beam.

6. 发明专利

JPS62137835A APPARATUS FOR INSPECTING DEFECT IN CHARGED BEAM PATTERN 失效
公开(公告)号：JPS62137835A
公开(公告)日：1987-06-20
申请号：JP27850785
申请日：1985-12-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： MORIIZUMI KOICHI , TAKEUCHI SUSUMU
IPC分类号： H01L21/66 , H01J37/28
摘要： PURPOSE:To perform high speed inspection of defects without large capacity memories, by projecting two charged beams on a pattern to be inspected and a reference pattern, sequentially comparing the intensities of secondary electrons, which are discharged from both patterns, thereby detecting the defects in the pattern. CONSTITUTION:One of two charged beams is projected on a pattern, whose defects are to be inspected; and the other is projected on a reference pattern. The two charged beams are alternately turned On and OFF by a blanking control circuit 4 so that the charged beams are alternately projected on the pattern to be inspected and the reference pattern. The secondary electron intensity signals of both patterns are detected in a time shared basis. Therefore, a sample chamber is not divided into two chambers and both patterns are not required to be isolated. One secondary electron detector 3 is enough. A deflection control circuit 5, which deflects the charged beams in association with the blanking control circuit 4, is provided. A pattern-defect detecting circuit 60 compares the intensities of the secondary electrons, which are generated from the pattern to be inspected and from the reference pattern for comparison and inspection and detects the defects in the pattern.

7. 发明专利

JPS62136817A ELECTRON BEAM EXPOSURE DEVICE 失效
公开(公告)号：JPS62136817A
公开(公告)日：1987-06-19
申请号：JP27865485
申请日：1985-12-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： MORIIZUMI KOICHI , TAKEUCHI SUSUMU , SAITO KAZUNORI
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain an electron beam exposure device, which corrects a proximity effect and can form a fine pattern having high precision, by providing an exposed-dose modulation means modulating the quantity of currents of electron beams at every one picture element. CONSTITUTION:The voltage of a grid 12 fitted just under an electron gun 1 is controlled by an exposed-dose modulation circuit 9, thus modulating the quantity of currents of electron beams at every one shot. Consequently, an exposed dose cans be changed at every one picture element without altering the speed of deflection of electron beams and a blanking period. A blooming is generated with the modulation of the quantity of currents of electron beams, but the blooming is corrected at a real time by automatic focus correction circuits 10, 11. Accordingly, a proximity effect is corrected, thus acquiring a pattern having high accuracy.

8. 发明专利

JPS6240146A DEVICE FOR INSPECTING PATTERN DEFECT BY CHARGED BEAM 失效
公开(公告)号：JPS6240146A
公开(公告)日：1987-02-21
申请号：JP17901285
申请日：1985-08-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEUCHI SUSUMU , MORIIZUMI KOICHI
IPC分类号： H01L21/66 , G01N23/18 , G01Q10/06 , G06T7/00 , H01J37/28
摘要： PURPOSE:To accurately and rapidly inspect a pattern for a defect, by using a convergent charged beam irradiator of high resolving power, using a scanning and synchronizing signal generator and a two-dimensional video memory to perform A/D conversion synchronously with scanning with a charged beam to enable the reading of a detection signal from the irradiator, and using an exclusive video calculator. CONSTITUTION:A convergent charged beam irradiator of high resolving power is used as a beam source. A/D conversion is performed by a scanning and synchronizing signal generator 12 and a two-dimensional video memory 13 synchronously with scanning with a charged beam to enable the reading of a detection signal from the irradiator. An edge is extracted from video data by an exclusive video calculator 13 to perform first differentiation and binary encoding to obtain processed data, which are compared with inspection data read out of an auxiliary memory 15. A pattern can thus be inspected for a defect rapidly and accurately.

9. 发明专利

JPS6184833A Inspection-correction apparatus for mask pattern defect 失效
标题翻译：用于掩模图形缺陷的检查校正装置
公开(公告)号：JPS6184833A
公开(公告)日：1986-04-30
申请号：JP20756884
申请日：1984-10-02
申请人： Mitsubishi Electric Corp
发明人： MORIMOTO HIROAKI , SAITO KAZUNORI , TAKEUCHI SUSUMU
IPC分类号： G03F1/84 , G03F1/86 , H01L21/027 , H01L21/30
CPC分类号： H01L21/30
摘要： PURPOSE:To prevent detect correction marks from remaining, by a method wherein a mask pattern is scanned with a converged ion beam, and pattern defects are detected by obtained secondary electron signals; then, at the same time, the defects are corrected by ion beam irradiation. CONSTITUTION:Secondary electron signal waveforms 33 are obtained when the mask pattern 30 of a mask substrate 29 is scanned with a scanning ion beam 32. Thus, secondary electron signals made binary in scanning are successively contained into a video memory 25. On finish by a frame, a video signal processing circuit 24 successively reads out corresponding mask pattern design data which have been made binary by means of a CPU 26 via I/O bus 28, compares said data with the data in the video memory 25, and checks them for difference. If they have a difference, the data of its coordinates and size is fed to a beam deflection control circuit 22, and a defect part 31 is corrected by irradiation with ion beams 12.
摘要翻译：目的：通过利用会聚离子束扫描掩模图案的方法来防止检测到校正痕迹，并通过获得的二次电子信号检测图案缺陷; 然后，同时通过离子束照射校正缺陷。构成：当用扫描离子束32扫描掩模基板29的掩模图案30时，获得二次电子信号波形33.因此，扫描中二进制的二次电子信号被依次包含在视频存储器25中。视频信号处理电路24通过I / O总线28连续地读取已经通过CPU26进行二进制的对应的掩模图案设计数据，将所述数据与视频存储器25中的数据进行比较，并且检查它们区别。如果它们有差异，则其坐标和尺寸的数据被馈送到光束偏转控制电路22，并且通过用离子束12照射来校正缺陷部分31。

10. 发明专利

JPS60238707A MEASURING INSTRUMENT OF PATTERN STEP DIFFERENCE 失效
公开(公告)号：JPS60238707A
公开(公告)日：1985-11-27
申请号：JP9510184
申请日：1984-05-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , TAKEUCHI SUSUMU
IPC分类号： G01B11/24 , G01B11/245 , G01B15/04 , H01L21/66
摘要： PURPOSE:To measure without contacting the step difference of a minute pattern by scanning with irradiating an electron beam onto a minute pattern on a sample to be measured and by finding the shape of the sample to be measured with measurement of the intensity of the reflected electron. CONSTITUTION:An electron gun (not showin in a figure) for irradiating an electron beam 4 of about 1keV accelerating voltage, about 100Angstrom diameter onto the face of a base plate 2 forming a minute pattern 3 of about 1mum width is installed remotely enough and scannably in the direction of an arrow C to enable to irradiate the electron beam 4 almost vertically for the base plate 2. An electron measurer 6 of a photomulti, etc. for measuring the intensity of the reflected electron 5 which the irradiated electron beam 4 is dispersed at the irradiating point is also installed right and left on the upper part of the base plate 2. The step difference of a minute pattern can be thus measured without contacting.

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