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1. 发明专利

JPS6154213B2 失效
公开(公告)号：JPS6154213B2
公开(公告)日：1986-11-21
申请号：JP6430280
申请日：1980-05-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAZAKI TERUHIKO , HOSHIKA HARUYUKI
IPC分类号： G03F1/00 , G03F1/40 , H01L21/027

2. 发明专利

JPS61168227A SUBSTRATE FOR EXPOSURE OF MINUTE PATTERN AND APPARATUS FOR EXPOSING MINUTE PATTERN 失效
公开(公告)号：JPS61168227A
公开(公告)日：1986-07-29
申请号：JP948585
申请日：1985-01-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAJIMA MASAYUKI , YAMAZAKI TERUHIKO
IPC分类号： G03F1/84 , G03F9/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To enable the comparative inspection of patterns of any chip size, by drawing a plurality of minute patterns in the same form on the main body of a substrate, and by providing alignment marks for each minute pattern. CONSTITUTION:A reticle 11 is formed to be twice as large as an area wherein exposure can be made, and minute patterns 2c in the same form are drawn in two places on this reticle, while reticle alignment marks 3 are prepared also in two places. Moreover, a substrate driving device having a reticle edge guide 12 which can be driven vertically is provided near a platen of a reduced projection exposure device so as to select a desired pattern 2c with ease and without fail. Even when any defect such as the presence of an alien substance is detected on either one of chips by the comparative inspection of the patterns 2c, the other chip can be mounted on the platen without elimination of said defect, and thus a pattern free from any defect can be transferred efficiently on a wafer 10.

3. 发明专利

JPS59141227A Formation of fine pattern 失效
标题翻译：形成精细图案
公开(公告)号：JPS59141227A
公开(公告)日：1984-08-13
申请号：JP1570583
申请日：1983-02-01
申请人： Mitsubishi Electric Corp
发明人： TANAKA KAZUHIRO , YAMAZAKI TERUHIKO
IPC分类号： H01L21/302 , G03F7/09 , G03F7/20 , G03F7/30 , H01L21/027 , H01L21/3065
CPC分类号： G03F7/094
摘要： PURPOSE:To enable to form a fine pattern with high precision, and moreover having scanty defect by a method wherein the whole process of photoengraving is converted into a dry process according to development using plasma, and moreover inversion etching is adopted. CONSTITUTION:A polyimide layer 11 is formed as an organic material layer on a semiconductor wafer 10, and after a metal chrome film 12 containing tungsten, etc. as impurities is adhered there on, a resist film 13 for electron beam exposure is applied on the metal chrome film 12 thereof, and prebaking is performed. Then an electron beam 14 is projected to the resist film 13 thereof selectively coresponding to the desired pattern. After then, plasma dry development is performed in a wet air atmosphere using a plasma device. Because thus obtained resist pattern 15 has thin film thickness, inversion etching is performed. An image of reversal consisting of a metal thin film 16 is formed, and a fine pattern having a sharp edge is obtained. The groundwork polyimide layer 11 is etched in succession using the metal thin film pattern 16 as a mask. As a result, a sharply fine pattern having a high aspect ratio can be formed.
摘要翻译：目的：为了能够以高精度形成精细图案，并且通过根据使用等离子体显影将光刻的整个过程转换成干法的方法，还具有不足的缺陷，此外采用反转蚀刻。构成：在半导体晶片10上形成聚酰亚胺层11作为有机材料层，在作为杂质含有钨等的金属铬膜12粘附在其上，在电子束曝光用抗蚀剂膜13上涂布金属铬膜12，进行预烘烤。然后，电子束14被投影到选择性地对应于期望图案的抗蚀剂膜13上。之后，使用等离子体装置在湿空气气氛中进行等离子体干燥显影。由于这样获得的抗蚀剂图案15具有薄膜厚度，因此进行反转蚀刻。形成由金属薄膜16构成的反转图像，得到具有尖锐边缘的精细图案。使用金属薄膜图案16作为掩模来连续蚀刻基底聚酰亚胺层11。结果，可以形成具有高纵横比的锐利精细图案。

4. 发明专利

JPS59126636A Formation of microscopic pattern on semiconductor substrate 失效
标题翻译：在半导体基板上形成微观图案
公开(公告)号：JPS59126636A
公开(公告)日：1984-07-21
申请号：JP314283
申请日：1983-01-10
申请人： Mitsubishi Electric Corp
发明人： YAMAZAKI TERUHIKO , SUZUKI YOSHIMARE
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/302
摘要： PURPOSE:To improve the accuracy in pattern formation by a method wherein a desired pattern is provided on the main surface of a substrate, a plasma etching is performed using the plasma of a compound containing chlorine, and a metal film having a small etching speed is formed using an ion beam of inert gas. CONSTITUTION:A Ti film 2 is formed on the main surface of a semiconductor substrate 1. Then, a resist film 3 to be used for an etching mask is formed. Subsequently, a Ti film 2a alone is left by performing a plasma etching, and a pattern is formed by projecting an alugon ion beam on the above. At that time, as the etching speed of the Ti film 2a is smaller than that of the resist film 3, the accuracy of pattern on the Ti film 2a can be increased.
摘要翻译：目的：为了通过在基板的主表面上设置期望的图案的方法来提高图案形成的精度，使用含氯化合物的等离子体进行等离子体蚀刻，蚀刻速度小的金属膜为使用惰性气体的离子束形成。构成：在半导体基板1的主表面上形成Ti膜2.然后，形成用于蚀刻掩模的抗蚀剂膜3。随后，通过进行等离子体蚀刻而留下单独的Ti膜2a，并且通过将上述的异种离子束投影而形成图案。此时，随着Ti膜2a的蚀刻速度小于抗蚀剂膜3的蚀刻速度，可以提高Ti膜2a上的图案的精度。

5. 发明专利

JPS5989422A MANUFACTURE OF X-RAY MASK 失效
公开(公告)号：JPS5989422A
公开(公告)日：1984-05-23
申请号：JP20129982
申请日：1982-11-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUZUKI YOSHIKI , YAMAZAKI TERUHIKO
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027
摘要： PURPOSE:To simplify the process of manufacture as well as to microscopically form a pattern by a method wherein, after a gold thin film has been uniformly formed on a Ti thin film which is an X-ray absorbing layer, a metal film having high ion-etching resistance property is formed on the gold thin film. CONSTITUTION:A nitride film (boron nitride film, polyimide) 2 is a thin film which transmits X-rays easily is formed on a silicon substrate 1. A Ti thin film 3 is uniformly formed on the film 2. A gold thin film 4 is the layer which absorbs X-rays and it is formed on the film 3. As the films 3 and 4 have an excellent adhesive property, the film 4 is hardly exfoliated. An Mo (Ti and Ta) film 5 has a high ion-etching resistance property, and it is formed into a pattern on the film 4. Said film 4 is removed by performing an ion-etching using the film 5 as a mask. The mask for X-ray exposure can be completed by performing an etching on the substrate 1.

6. 发明专利

JPS5986051A PRODUCTION OF MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPS5986051A
公开(公告)日：1984-05-18
申请号：JP19720382
申请日：1982-11-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAZAKI TERUHIKO , SUZUKI YOSHIKI
IPC分类号： G03F1/00 , G03F1/68 , G03F1/80 , H01L21/027
摘要： PURPOSE:To obtain easily a titled mask having a fine pattern by forming successively a thin gold film, a thin metallic film with which the etching rate by the ion beam of inert gas is lower than with the thin gold film and a resist film on a substrate then etching thereof. CONSTITUTION:The main surface of a mask substrate 1, such as a silicon nitride film, which permits the transmission of an X-ray is cleaned by etching and thereafter a thin gold film 2 and a thin metallic film (e.g.; thin molybdenum film) 3 with which the etching rate by the ion beam of inert gas is lower than with the film 2 are successively formed thereon. A resist film 4 of the pattern corresponding to the pattern of the required X-ray absorption film is formed on the surface of the film 3. The film 3 and the film 2 are etched successively by the ion beam of the inert gas with the film 4 as a mask, and the film 2 of the pattern corresponding to the pattern of the X-ray absorption film is allowed to remain on the surface of the substrate 1, whereby an intended mask for X-ray exposure is obtd.

7. 发明专利

JPS58174581A METHOD FOR DRY ETCHING OF CHROMIUM TYPE FILM 失效
公开(公告)号：JPS58174581A
公开(公告)日：1983-10-13
申请号：JP5919982
申请日：1982-04-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAZAKI TERUHIKO
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065
摘要： PURPOSE:To form a chromium type film pattern with high dimensional preciseness at a high etching rate, by acting gas plasma containing a halogen gas and NOX gas on a material to be etched prepared by providing a photosensitive resin rilm having a predetermined pattern on a chromium type film. CONSTITUTION:A material to be etched prepared by providing a photosensitive resin layer having a predetermined pattern on a chromium type film is subjected to dry etching by mixed gas plasma containing at least a halogen gas, for example, CH2Cl2 and NO for example, NOX or NO2. By this method, the film reduction of the photosensitive resin film as an etching resistance mask material is suppressed and, at the same time, the high etching rate of the chromium type film is obtained. Therefore, a chromium type film pattern with high dimensional precisencess corresponding to the pattern of the resin film can be obtained.

8. 发明专利

JPS5759543B2 失效
公开(公告)号：JPS5759543B2
公开(公告)日：1982-12-15
申请号：JP6165274
申请日：1974-05-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAZAKI TERUHIKO
IPC分类号： H01L21/027 , G03C1/765 , G03F1/00 , G03F1/60 , G03F1/68 , G03F9/00 , H05K3/00

9. 发明专利

JPS5711344A DRY DEVELOPING METHOD 失效
公开(公告)号：JPS5711344A
公开(公告)日：1982-01-21
申请号：JP8684780
申请日：1980-06-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAZAKI TERUHIKO , TANAKA KAZUHIRO
IPC分类号： G03F7/36 , G03F7/004 , G03F7/20 , G03F7/30 , H01L21/027 , H05K3/08
摘要： PURPOSE:To simplify the process and to obtain a superior pattern by selectively irradiating an electron beam sensitive resist with electron beams to form a part having a reduced thickness and carrying out etching with plasma of an O2-contg. gas until the irradiated part is removed. CONSTITUTION:Especially in a method of forming a micropattern on a semiconductor substrate, a silicon oxide film 2 is formed on silicon semiconductor substrate 1, and an electron beam sensitive resist 3 such as 1,1-dimethyltetrafluoropropyl methacrylate is applied to the film 2. The resist 3 is selectively irradiated with electron beams 4 to reduce the thickness of the film 3, and by treating the film 3 with plasma of an O2-contg. gas for about 5min, the irradiated part is removed thoroughly to form a resist pattern. Using this resist film 3 as a mask the film 2 is etched to obtain the desired pattern. Thus, the process is simplified as compared to conventional wet development, and the manufacturing yield is enhanced.

10. 发明专利

JPS56133832A CORRECTION OF PATTERN DEFECT 失效
公开(公告)号：JPS56133832A
公开(公告)日：1981-10-20
申请号：JP3773180
申请日：1980-03-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAZAKI TERUHIKO , HOSHIKA HARUYUKI
IPC分类号： G03F1/00 , G03F1/72 , H01L21/027
摘要： PURPOSE:To correct pattern defects by arranging a metallic thin film in parallel with metallic thin films at very short intervals on the upper side of the recticle on a substrate with facing the film downward wherein the part opposing to a detect is dropped for dissolution by laser light to close the defect. CONSTITUTION:Metallic thin films 2 having pattern defects are placed on a glass substrate 1 and a glass substrate 4 having the similar metallic thin film 5 is arranging by locating the film 5 on the films 2 in parallel with the films 2 at very short intervals and facing to the films 2 and laser light 7 is aimed at the film 5 through a reflector 8 and a slit 9 so that the laser light 7 may become the same dimension at the upper part of a defect 3 by transmitted illumination light 10. The film 5 adhered to the substrate 4 by the irradiation of the laser light is melted and adhered to the defect 3 on the films 2 to close the defected part. In this way, the necessity of reproducing a recticle or a metal photomask will not exist and the recticle or the metal photomask will be made in a short period.

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