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11. 发明专利

JPS6213029A RESIST COATING METHOD 失效
公开(公告)号：JPS6213029A
公开(公告)日：1987-01-21
申请号：JP15342985
申请日：1985-07-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： HOSHIKA HARUYUKI , NISHIHATA MIKIO
IPC分类号： H01L21/027 , B05D1/40 , B05D3/04 , G03F7/16 , H01L21/30
摘要： PURPOSE:To uniformly form the thickness of a resist film by spraying pressurized gas toward the periphery of a semiconductor device substrate. CONSTITUTION:A plurality of injection nozzles 9 for injecting pressurized gas 8 are provided at the relative positions of the periphery 2b of a semiconductor device substrate 1. The gas 8 may only be inert gas. The gas 8 pressurized immediately before the sequence of spin coating a resist 3 is finished is injected from the fine nozzle 9 from the center 2a toward the periphery 1b. Thus, the resist stored at the periphery 1b is scattered externally of the substrate 1 to prevent the film thickness at the periphery 1b from increasing.

12. 发明专利

JPS61222130A FORMING METHOD OF RESIST PATTERN 失效
公开(公告)号：JPS61222130A
公开(公告)日：1986-10-02
申请号：JP6570385
申请日：1985-03-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： CHIBA AKIRA , HOSHIKA HARUYUKI , SUZUKI YOSHIKI , YOSHIOKA NOBUYUKI , ISHIO NORIAKI
IPC分类号： H01L21/30 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To conform a resist pattern to a predetermined pattern by exposing a resist layer for exposure, which has ununiform film thickness and the values of ununiform film thickness thereof can previously be determined at a required position on a substrate on which a resist is applied, and dividing the resist layer into two of a removal easy section and a removal difficult section. CONSTITUTION:In compensation at a step when a compensation pattern is prepared from a predetermined pattern 8, the boundaries of removal difficult sections 2Q before development where boundaries after development coincide with or are brought close to the boundaries of each section of the predetermined pattern 8 according to the generation mechanism of the pattern displacement are predicted from data capable previously determining the film thickness of each section of a resist layer 2 for exposure and the magnitude of development action, and the boundaries are acquired. Consequently, the displacement of a resist pattern 2R actually obtained to the predetermined pattern 8 is further reduced regarding pattern displacement generated in a development process due to the ununiformity of the resist layer 2 for exposure, and brought to zero in principle on a special case.

13. 发明专利

JPS61107642A Cooling method of target for generating x-rays 失效
标题翻译：用于产生X射线的目标的冷却方法
公开(公告)号：JPS61107642A
公开(公告)日：1986-05-26
申请号：JP23060984
申请日：1984-10-30
申请人： Mitsubishi Electric Corp
发明人： HOSHIKA HARUYUKI , SUZUKI YOSHIKI , YOSHIOKA NOBUYUKI , ISHIO NORIAKI , CHIBA AKIRA
IPC分类号： F25D3/10 , H01J35/12
CPC分类号： H01J35/12
摘要： PURPOSE:To improve cooling effect by providing a cavity part in a target supporter serving to support a target on the side of the target, and supplying compressed liquefied gas thereinto for cooling the target by making use of heat vaporization of said gas. CONSTITUTION:A cavity part 7 is formed in a target supporter 2 for supporting a target 1 serving to generate X-rays 4 with irradiation of an electron beam 3 on the side of the target 1, and a pipe 8 for liquefied gas is provided in communication with said cavity part. In succession, liquefied gas 9 such as Freon, etc., is blown into the cavity part 7 from a nozzle part 10 and rapidly vaporized into gas, whereby the target 1 is cooled with the aid of vaporization heat produced thereupon. Thus, cooling effect can greatly be improved as compared with a case by water cooling for taking out a higher X-ray output.
摘要翻译：目的：通过在目标支撑体中设置用于支撑目标侧的目标的空腔部分，并且通过利用所述气体的热汽化来供应压缩的液化气体来冷却目标，来改善冷却效果。构成：在目标支撑体2中形成空腔部7，用于通过照射目标1侧的电子束3来支撑用于产生X射线4的靶1，并且在液体气体管8中设置有用于液化气体的管8 与所述腔部连通。接着，将诸如氟利昂等的液化气体9从喷嘴部分10吹入空腔部分7中并迅速汽化成气体，由此借助于其上产生的蒸发热来冷却靶材1。因此，与通过水冷用于取出较高的X射线输出的情况相比，可以大大提高冷却效果。

14. 发明专利

JPS6022130A DEVICE FOR PROTECTING PHOTOMASK FOR EXPOSURE 失效
公开(公告)号：JPS6022130A
公开(公告)日：1985-02-04
申请号：JP13225383
申请日：1983-07-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： HOSHIKA HARUYUKI
IPC分类号： G03F1/64 , G03F7/20 , H01L21/027
摘要： PURPOSE:To prevent dew condensation on the transparent protective sheet of a protecting device and the production of a strain in the sheet and to enable the exact transfer of a pattern by piercing plural fine ventholes in the support frame of the device so as to make the temp. and humidity of the internal air equal to those of the open air. CONSTITUTION:Plural fine ventholes 12 of

15. 发明专利

JPS5931975B2 JPS5931975B2 - 失效
公开(公告)号：JPS5931975B2
公开(公告)日：1984-08-06
申请号：JP12828077
申请日：1977-10-25
申请人： Mitsubishi Electric Corp
发明人： NISHIOKA KYUSAKU , KANEDAKI YUKIMICHI , YAMADA MITSURU , UNO JUN , HOSHIKA HARUYUKI , YAMAZAKI TERUHIKO
IPC分类号： H01L21/302 , G03F1/00 , G03F1/54 , H01L21/027 , H01L21/3065

16. 发明专利

JPS57176729A FORMING METHOD FOR PATTERN 失效
公开(公告)号：JPS57176729A
公开(公告)日：1982-10-30
申请号：JP6290481
申请日：1981-04-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： HOSHIKA HARUYUKI , KOTANI KIYOUHIKO , TAKANO HIROZOU , MASUKO YOUJI
IPC分类号： H01L21/306
摘要： PURPOSE:To obtain a pattern having no irregular wet etching by selectively removing an insulating film of upper layer of the insulating layer laminated on a semiconductor substrate and covering the all surface of the substrate with a hydrophilic and water soluble organic substance. CONSTITUTION:A resist film pattern 4 is formed on the first layer insulating film 2 and second layer insulating films 3 laminated on a semiconductor substrate 1, the film 3 is selectively removed using the pattern 4 as a mask, and a thin film layer 5 made a of hydrophilic and water soluble organic substance is formed on the overall surface of the substrate 1, thereby forming a desired pattern by wet etching at the film 2. In this manner, the etchant is immersed upto the surface of the film 2 even in fine pattern, thereby performing wet etching without irregularity.

17. 发明专利

JPS57176718A REDUCED PRESSURE CVD DEVICE 失效
公开(公告)号：JPS57176718A
公开(公告)日：1982-10-30
申请号：JP6290381
申请日：1981-04-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOTANI KIYOUHIKO , MASUKO YOUJI , TAKANO HIROZOU , HOSHIKA HARUYUKI
IPC分类号： C23C16/44 , H01L21/205 , H01L21/31
摘要： PURPOSE:To prevent broken pieces of a product dropping from a tubular wall from being adhered to a wafer by disposing a detachable barrier between a reaction tube and the wafer and energizing and heating the barrier. CONSTITUTION:A barrier 7 made of silicon carbide is provided between the tubular wall of a reaction tube 1 and a wafer 3, the barrier 7 is detachably supported on supports 8 provided at both end sides of a wafer holder 2, and energizing electrodes 10 are provided through leads 9 at both ends of the barrier 7. In this manner, the product dropping from the tubular wall is heated and adhered to the barrier 7. Accordingly, the product is not adhered to the wafer. Since the barrier is detachable, the barrier can be exchanged at every treatment and can be cleaned.

18. 发明专利

JPH0297950A RESIST PATTERN FORMING METHOD 失效
公开(公告)号：JPH0297950A
公开(公告)日：1990-04-10
申请号：JP25111288
申请日：1988-10-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： HOSONO KUNIHIRO , HOSHIKA HARUYUKI , TAKEUCHI SUSUMU
IPC分类号： G03F7/004 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To make the subject pattern high accuracy, and to abbreviate the processing time of a resist by removing the resist from the marked region of a pattern, and being subjected a 1st pattern to electric charge beam exposure based on an exposed mark, and a 2nd pattern to photoexposure, respectively. CONSTITUTION:The resist 5 (such as a novolak type resist) which acts a a positive type resist against the photoexposure and a negative type resist against the electric charge beam exposure, respectively is applied on a substrate 1 mounted a mark 2 for detecting a position thereon. Next, the resist located on the region of the mark 2 is irradiated with a light, followed by developing the irradiated resist to exposure the mark 2. Subsequently, the position of the exposed mark 2 is detected by using a charged particle beam R1, and a fine pattern 4a is exposed by using the charged particle beam R2 with high irradiating light quantity. As the mark 2 is exposed, the detecting accuracy and the plotting accuracy of the pattern are improved. Next, the resist is removed by irradiating the whole surface of the pattern other than a large area pattern 4b with the light to obtain the patterns 4a and 4b. As the pattern 4b is formed by an once exposure of the light, the plotting time is abbreviated.

19. 发明专利

JPH0246740A FORMATION OF GATE ELECTRODE 失效
公开(公告)号：JPH0246740A
公开(公告)日：1990-02-16
申请号：JP19764688
申请日：1988-08-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEUCHI SUSUMU , HOSONO KUNIHIRO , HOSHIKA HARUYUKI
IPC分类号： H01L29/812 , H01L21/338 , H01L29/417
摘要： PURPOSE:To easily obtain a T-shaped gate electrode having fine channel length by forming an insulating film having an opening on a semiconductor substrate, forming a second insulating film on the sides of the opening for providing a second opening and growing a metallic film on the semiconductor substrate through this second opening. CONSTITUTION:An insulating film 11 is formed on a substrate 1 of GaAs or the like. A positive-type resist film 12 is formed on the insulating film 11. The resist film 12 is provided with an opening 14. The insulating film 11 is etched and the resist film 12 is removed so that a first aperture 15 is provided. An insulating film 16 is deposited on an area of the insulating film 11 including the first opening 15. The insulating film 16 is then subjected uniformly to strongly anisotropical etching until a longitudinal region of the surface of the substrate 1 is exposed. As a result, the width of the first opening 15 is decreased to provide a second opening 17. A metallic film is grown selectively on the substrate 1 through the second opening 17 so that a T-shaped metallic film 18, namely a T gate electrode, is provided on the substrate 1.

20. 发明专利

JPS6154213B2 失效
公开(公告)号：JPS6154213B2
公开(公告)日：1986-11-21
申请号：JP6430280
申请日：1980-05-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAZAKI TERUHIKO , HOSHIKA HARUYUKI
IPC分类号： G03F1/00 , G03F1/40 , H01L21/027

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