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1. 发明专利

JPS5461478A CHROMIUM PLATE 失效
公开(公告)号：JPS5461478A
公开(公告)日：1979-05-17
申请号：JP12828077
申请日：1977-10-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： NISHIOKA KIYUUSAKU , KANEDAKI YUKIMICHI , YAMADA MITSURU , UNO JIYUN , HOSHIKA HARUYUKI , YAMAZAKI TERUHIKO
IPC分类号： H01L21/302 , G03F1/00 , G03F1/54 , H01L21/027 , H01L21/3065
摘要： PURPOSE:To enable negative and positive inversion in the stage of etching, by coating the oxide chromium film including high melting point metal such as chromium film as the first layer and tungsten for the second layer on the transparent subsstrate. CONSTITUTION:The chromium oxide film 5 is coated on the transparent substrate 1 for the chromium film 2 for the first layer and tungsten as the second layer. Further, after forming the mask 4, when gas plasma etching is made, the chromium film 2 under the mask 4 and the chromium oxide film 5 including tungsten are etched and no etching is made for the part of the surface exposed.

2. 发明专利

JPS56100414A CORRECTING DEVICE FOR PATTERN OF PHOTOMASK 失效
公开(公告)号：JPS56100414A
公开(公告)日：1981-08-12
申请号：JP271080
申请日：1980-01-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： KANEDAKI YUKIMICHI
IPC分类号： G03F1/00 , G03F1/72 , H01L21/027
摘要： PURPOSE:To perform correction of both excess and missing parts of a pattern as a photomask device being set in one device and also to make a corrected missing part sustainable to chemical and physical treatment. CONSTITUTION:The pattern surface of a mask 2 is sealed to the opening part of a vacuum chamber 1, and Ar is introduced 6 and kept at 10 Torr. A lamp 14 is lighted to detect the missing part 3, while supporting block pieces 1, 7, 10 and 5 are driven, and thus observation is conducted. Next, the opening of an anode 11 being adjusted, the missing part 3 is covered in the minimum degree as required, high voltage is given to in between the anode 11 and a Cr target 13 and thereby Cr is connected to be corrected. The part thus corrected is sustainable to chemical and physical treatment in the same degree as a normal Cr pattern. As for the excess part, a laser is oscillated 18, a beam is shaped 19, and the beam thus shaped is focused at the excess part through an optical system, whereby the part is removed through evaporation. By this constitution, the efficiency of operation is raised.

3. 发明专利

JPS5572039A PLASMA ETCHING DEVICE 失效
公开(公告)号：JPS5572039A
公开(公告)日：1980-05-30
申请号：JP14749378
申请日：1978-11-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： KANEDAKI YUKIMICHI
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a well-defined fine pattern by dividing facing electrodes and controlling applied voltage, power, and time. CONSTITUTION:Divided electrodes 21-25 are given and voltages, powers, and times applied to each electrode are independently controlled by the controller 12. In this manner, the etching speed is made uniform to etch the sample 4. The controller 12 uses the outputs from the temperature sensors 13-18 provided underneath the electrode 3 to maintain the temperatures on the surface of the samples 4 at a constant value so that the temperature is distributed uniformly. The structure allows the plasma distribution to be defined to the desired shape in the reaction chamber, thereby reducing variations in the pattern dimensions and keeping a stable pattern quality.

4. 发明专利

JPS5931975B2 JPS5931975B2 - 失效
公开(公告)号：JPS5931975B2
公开(公告)日：1984-08-06
申请号：JP12828077
申请日：1977-10-25
申请人： Mitsubishi Electric Corp
发明人： NISHIOKA KYUSAKU , KANEDAKI YUKIMICHI , YAMADA MITSURU , UNO JUN , HOSHIKA HARUYUKI , YAMAZAKI TERUHIKO
IPC分类号： H01L21/302 , G03F1/00 , G03F1/54 , H01L21/027 , H01L21/3065

5. 发明专利

JPS5732446A Resist developing device 失效
标题翻译：阻力发展装置
公开(公告)号：JPS5732446A
公开(公告)日：1982-02-22
申请号：JP10853680
申请日：1980-08-04
申请人： Mitsubishi Electric Corp
发明人： KANEDAKI YUKIMICHI
IPC分类号： G03D5/04 , G03F7/30
CPC分类号： G03F7/3021
摘要： PURPOSE:To prevent a great difference in resist pattern size by providing a nozzle for developer injection with a driving mechanism and by moving the nozzle to scan the atomized developer, injected from the nozzle, on a photoresist film. CONSTITUTION:A nozzle 5 is made by a driving device 6 to oscillate on a fulcrum 5a so that an atomized developer from its injection outlet scans on a resist surface 2a. In this case, a chromium plate 2 coated with resist to be developed is held in a rotary chuck and the developer is injected by the driving device 6 on the resist surface on the chrominum plate 2 in a fan shape. Consequently, the developer never gathers more at the peripheral part of the rotation than at the center part unlike a conventional spray system to advance the development uniformly, and variance in a substrate is reduced as much as possible.
摘要翻译：目的：为了防止抗蚀剂图案尺寸的巨大差异，通过为驱动机构提供用于显影剂注入的喷嘴并且通过移动喷嘴来扫描从喷嘴注入的雾化显影剂在光致抗蚀剂膜上。构成：喷嘴5由驱动装置6制成以在支点5a上摆动，使得其喷射出口的雾化显影剂在抗蚀剂表面2a上扫描。在这种情况下，涂覆有待显影抗蚀剂的铬板2被保持在旋转卡盘中，并且显影剂被驱动装置6以扇形的形式注入到色板2上的抗蚀剂表面上。因此，与传统的喷雾系统不同，显影剂的周边部分不会比中心部分更多地聚集，从而均匀地促进显影，并且尽可能地减小了基板的变化。

6. 发明专利

JPS54156632A CONTACT PRINTING EXPOSURE METHOD 失效
公开(公告)号：JPS54156632A
公开(公告)日：1979-12-10
申请号：JP6618778
申请日：1978-05-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： KANEDAKI YUKIMICHI
IPC分类号： H05K3/00 , G03C5/08 , G03F7/20 , H01L21/02 , H01L21/027 , H05K3/06
摘要： PURPOSE:To prevent the occurrence of imperfect separation phenomena and obviate the production of defects in the patterns printed on the substrates to be processed such as semiconductors by letting an organic compound be adsorbed on the surface of a photo mask in its vapor. CONSTITUTION:An inert gas is introduced from a lead-in pipe 6 inot an outside box 1 and the gas in the box 1 is exhausted to the outside through an exhaust pipe 7. Next, an organic compound 4 such as sulfonic acid derivative is evaporated by the heating heater 2 connected to a power source transformer 3 and is adsorbed in island or laminar form on the surface of a photo mask 5 having been drawn with desired patterns. Next, this mask 5 and the substrates to be processed having been coated with photosensitive material are contacted, whereby the patterns of the mask 5 are contact-printed to the substrates to be processed and are then exposed. This obviates the production of the defects owing to the entry of opaque foreign material in the patterns having been printed on the substrates to be processed.

7. 发明专利

JPS5421274A CHROMIUM PLATE 失效
公开(公告)号：JPS5421274A
公开(公告)日：1979-02-17
申请号：JP8683977
申请日：1977-07-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： KANEDAKI YUKIMICHI , NISHIOKA KIYUUSAKU
IPC分类号： G03F1/00 , G03F1/54 , H01L21/027 , H01L21/302
摘要： PURPOSE:To make good dimension accuracy, by increasing the etching speed in gas plasma etching, by adding fine amount of V group element such as N, P, As, Sb, Bi to the chromium or chromium oxide coated on a substrate.

8. 发明专利

JPH0344927A CLEANING METHOD FOR SEMICONDUCTOR SUBSTRATE AND CLEANING APPARATUS USED THEREFOR 失效
公开(公告)号：JPH0344927A
公开(公告)日：1991-02-26
申请号：JP18102589
申请日：1989-07-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： KANEDAKI YUKIMICHI , OMORI MASASHI
IPC分类号： H01L21/304 , B08B3/04
摘要： PURPOSE:To discharge remaining gas of a recess of a substrate to sufficiently distribute cleanser and to clean the substrate in a desired state by reducing a treating tank containing the substrate in a reduced pressure state, immersing the substrate with the supplied cleanser, and applying an ultrasonic vibration thereto. CONSTITUTION:A wafer 4 is placed on a wafer supporting base 11 of a treating tank 10, the tank 10 is pressure-reduced, and cleanser 3 is supplied from a cleanser supply tube 14 until the part of a vibrator 13 is immersed. Then, when the tank 10 is returned therein to the atmospheric pressure, the cleanser 3 is immersed into the trench of a substrate. Here, when an ultrasonic vibration is applied to a wafer 4 through the cleanser 3 by the vibrator 13, gas remaining in the bottom of the trench is bubbled to be discharged, and the cleanser 3 is sufficiently distributed to the whole trench face. Thus, the wafer 4 can be desirably cleaned to improve its quality.

9. 发明专利

JPS55100552A PHOTO MASK 失效
公开(公告)号：JPS55100552A
公开(公告)日：1980-07-31
申请号：JP956179
申请日：1979-01-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： TANAKA KAZUHIRO , KANEDAKI YUKIMICHI
IPC分类号： G03F1/00 , G03F1/40 , H01L21/027
摘要： PURPOSE:To prevent the photo mask necessary for semiconductor device production process from damages owing to the occurrence of charge concentration and prolong its life by so forming a transparent conductive film that it bonds to at least the side end faces of the pattern metal films formed on a transparent substrate. CONSTITUTION:A metal film 3 is formed on a transparent substrate 1 and a metal oxide film 4 on the surface thereof. Further, a photosensitive resin film 5 is coated thereon, after which exposure and printing of the desired patterns are applied, followed by development. Thence, with the photosensitive resin film 5 of the desired patterns having been obtained in this way as a mask, the metal film 3 and metal oxide film 4 are etched to apply the desired patterning. After this, the light-transmittable conductive film 2 such as of indium oxide is formed on the top surface of the transparent substrate 1 including the top surface of the photosensitive resin film 5 and the photosensitive resin film 5 is removed together with the conductive film 2 thereon with a resist release solution, whereby the photo mask is completed.

10. 发明专利

JPS5350981A PHOTO MASK COLLECTION METHOD 失效
公开(公告)号：JPS5350981A
公开(公告)日：1978-05-09
申请号：JP12654276
申请日：1976-10-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： KANEDAKI YUKIMICHI
IPC分类号： G03F1/00 , G03F1/72 , H01L21/027 , H01L21/302
摘要： PURPOSE:To readily restore a deficient part by dropping a treating solution to around the neighborhood of the pattern deficient part and locally depositing a metal or metal oxide.

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