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1. 发明公开

EP3017514A1 HIGH-COHERENCE SEMICONDUCTOR LIGHT SOURCES 无效
标题翻译： HOCHKOHÄRENTEHALBLEITERLICHTQUELLEN
公开(公告)号：EP3017514A1
公开(公告)日：2016-05-11
申请号：EP14820551.1
申请日：2014-06-30
申请人： California Institute of Technology
发明人： SANTIS, Christos T. , STEGER, Scott T. , YARIV, Amnon
IPC分类号： H01S3/08 , G02B6/00
CPC分类号： H01S5/12 , H01S5/021 , H01S5/0224 , H01S5/02272 , H01S5/02415 , H01S5/1014 , H01S5/1032 , H01S5/1203 , H01S5/2063 , H01S5/2224 , H01S5/2231 , H01S5/3013 , H01S5/3031 , H01S5/34306 , H01S2301/02 , H01S2301/163
摘要： A laser resonator includes an active material, which amplifies light associated with an optical gain of the resonator, and passive materials disposed in proximity with the active material. The resonator oscillates over one or more optical modes, each of which corresponds to a particular spatial energy distribution and resonant frequency. Based on a characteristic of the passive materials, for the particular spatial energy distribution corresponding to at least one of the optical modes, a preponderant portion of optical energy is distributed apart from the active material. The passive materials may include a low loss material, which stores the preponderant optical energy portion distributed apart from the active material, and a buffer material disposed between the low loss material and the active material, which controls a ratio of the optical energy stored in the low loss material to a portion of the optical energy in the active material.
摘要翻译：激光谐振器包括放大与谐振器的光学增益相关联的光的活性材料和与活性材料邻近设置的无源材料。谐振器在一个或多个光学模式上振荡，每个光学模式对应于特定的空间能量分布和谐振频率。基于被动材料的特性，对于对应于至少一种光学模式的特定空间能量分布，光能的主要部分与活性材料分开分布。被动材料可以包括低损耗材料，其存储与活性材料分开的优势光能部分，以及设置在低损耗材料和活性材料之间的缓冲材料，其控制存储在所述活性材料中的光能的比率低损耗材料到活性材料中光能的一部分。

2. 发明公开

EP2811593A1 Dispositif d'émission laser accordable 有权
标题翻译：设备为可调谐激光器的发射
公开(公告)号：EP2811593A1
公开(公告)日：2014-12-10
申请号：EP13305766.1
申请日：2013-06-07
申请人： ALCATEL LUCENT , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： Debregeas-Sillard, Hélène , Ben-Bakir, Badhise , Duan, Guang-Hua , Chimot, Nicolas
IPC分类号： H01S5/026 , H01S5/10 , H01S5/12 , H01S5/062 , H01S5/0625 , H01S5/14
CPC分类号： H01S5/2226 , H01S5/021 , H01S5/026 , H01S5/0614 , H01S5/0622 , H01S5/1032 , H01S5/1203 , H04B10/503
摘要： Un dispositif d'émission laser (1) accordable en longueur d'onde comporte :
un premier guide d'onde (31) comportant un moyen d'amplification optique pour produire une émission stimulée de lumière, le premier guide d'onde s'étendant selon une direction longitudinale du dispositif d'émission,
un deuxième guide d'onde (5) réalisé en silicium sur dioxyde de silicium et disposé parallèlement au premier guide d'onde espacé du premier guide d'onde dans une direction verticale du dispositif d'émission de manière à permettre l'existence d'un mode optique hybride couplé à la fois au deuxième guide d'onde et au premier guide d'onde, le deuxième guide d'onde comportant un réflecteur distribué (9) le long du deuxième guide d'onde, le deuxième guide d'onde comportant des zones transversales (11, 12, 13, 14) dopées différemment de manière à former une jonction polaire orientée selon un direction transversale du dispositif d'émission. Des électrodes (15, 16) couplées aux zones transversales dopées modifient un indice effectif vu par le mode optique hybride,

3. 发明公开

EP1696527A3 Low loss grating for high efficiency wavelength stabilized high power lasers 审中-公开
标题翻译：对于高效率的波长低损耗电网稳定化的高功率激光
公开(公告)号：EP1696527A3
公开(公告)日：2007-11-28
申请号：EP06250939.3
申请日：2006-02-22
申请人： JDS Uniphase Inc.
发明人： Peters, Matthew Glenn , Zhao, Hanmin
IPC分类号： H01S5/12 , H01S5/125
CPC分类号： H01S5/12 , H01S3/094069 , H01S5/1039 , H01S5/1203 , H01S5/1228 , H01S2302/00
摘要： A low optical loss and high efficiency grating is placed within a broad-area high-power laser diode or single spatial mode laser diode to narrow the spectral width and stabilize the emission wavelength. Several embodiments of grating configurations are presented, together with the measured results of a reduction to practice of a particular embodiment.

4. 发明授权

EP1376789B1 Distributed Feedback Semiconductor Laser for Outputting Beam of Single Wavelength 有权
标题翻译： DFB - 半导体激光器，用于产生单一波长的光束
公开(公告)号：EP1376789B1
公开(公告)日：2007-04-18
申请号：EP03013736.8
申请日：2003-06-17
申请人： ANRITSU CORPORATION
发明人： Mori, Hiroshi , Kikugawa, Tomoyuki , Takahashi, Yoshio , Fujita, Motoaki
IPC分类号： H01S5/12
CPC分类号： H01S5/12 , H01S5/0654 , H01S5/1203 , H01S5/1225 , H01S5/1231 , H01S5/124 , H01S5/1243

5. 发明公开

EP1296424A3 Semiconductor laser device with a diffraction grating and semiconductor laser module 审中-公开
$Semiconductor laser device with a diffraction grating and semiconductor laser module$
标题翻译： Halbleiterlaservorrichtung mit einem Beugungsgitter und Halbleiterlasermodul
公开(公告)号：EP1296424A3
公开(公告)日：2004-12-22
申请号：EP02252768.3
申请日：2002-04-19
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Wakisaka, Tsyuoshi , Tsukiji, Naoki , Yoshida, Junji
IPC分类号： H01S5/024
CPC分类号： H01S5/02484 , H01L2224/45144 , H01L2224/48091 , H01S5/0213 , H01S5/0224 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/1203 , H01L2924/00014 , H01L2924/00
摘要： In a semiconductor laser device provided with a semiconductor laser element for outputting a laser beam having a plurality of oscillation longitudinal modes at a stimulated Brillouin scattering threshold or less, a submount formed by diamond and set between the semiconductor laser element and a carrier each configured to enable a highly efficient transfer of heat between the semiconductor laser device components.
摘要翻译：在设置有半导体激光元件的半导体激光元件中，所述半导体激光元件用于输出具有受激布里渊散射阈值以下的多个振荡纵向模式的激光束，由金刚石形成的基台，并设置在半导体激光元件与载体之间，能够在半导体激光器件部件之间实现高效的热传递。

6. 发明公开

EP1215784A3 Semiconductor laser device for use in a semiconductor laser module and optical amplifier 审中-公开
标题翻译： Halbleiterlaservorrichtungfürein Halbleiterlasermodul und OptischenVerstärker
公开(公告)号：EP1215784A3
公开(公告)日：2004-01-07
申请号：EP01129993.0
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Kimura, Toshio , Aikiyo, Takeshi , Shimizu, Takeo , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B6/42 , G02B27/10
CPC分类号： G02B6/4218 , B82Y20/00 , G02B6/4206 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S3/302 , H01S5/005 , H01S5/02208 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1039 , H01S5/1085 , H01S5/1092 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/125 , H01S5/146 , H01S5/22 , H01S5/227 , H01S5/3215 , H01S5/3409 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A single semiconductor laser device (2) used in a semiconductor laser module of an optical amplifier (48) and having a first light emitting stripe (9) with a diffraction grating (75) and at least one other light emitting stripe (10) with a diffraction grating (75) and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.
摘要翻译：一种用于光放大器（48）的半导体激光器模块并且具有带有衍射光栅（75）的第一发光条纹（9）和至少一个其它发光条纹（10）的单个半导体激光器件（2）衍射光栅（75），并且它们对准以分别发射第一激光束和至少一个其它激光束通过一个边缘表面。

7. 发明公开

EP1215782A3 An integrated laser beam synthesizing module for use in a semiconductor laser module and an optical amplifier 审中-公开
标题翻译：为激光的合成集成模块梁用于半导体激光器模块和光放大器
公开(公告)号：EP1215782A3
公开(公告)日：2004-01-07
申请号：EP01129968.2
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Yamamoto, Toshiro , Toratani, Tomoaki , Kimura, Toshio , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Shimizu, Takeo , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , G02B6/42 , G02B27/10
CPC分类号： H01S5/4068 , H01S3/094096 , H01S3/09415 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A laser beam synthesizing member 60 of a semiconductor laser module used as an optical amplifier 48 that has a prism 5 configured to correct respective optical paths of a plurality of laser beams, a beam synthesizing member 7 configured to synthesize the plurality of laser beams once passed from the prism, and a holder member 61 configured to integrally hold the prism and the beam synthesizing member, and where the beam synthesizing member has a first input part 7a on which a first laser beam is incident, at least one other input part 7b on which an other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.
摘要翻译：的激光束合成用作光放大器48的半导体激光器模块的部件60并有一个棱镜5被配置为校正激光束的多个respectivement光路，光束合成部件7被配置为合成的激光束的多元性一旦通过从棱镜，并且被配置成整体保持有棱镜和光束合成部件的保持器部件61，并且其中所述光束合成构件具有在其上的第一激光束入射时，至少一个其他的输入部7b上的第一输入部7a 这在其他激光束入射，以及输出部，其从所述第一激光束从所述第一输入部分和其它激光束从所述至少一个其他输入部新兴新兴被多路复用并发射为多路复用的激光束。

8. 发明公开

EP1376789A2 Distributed Feedback Semiconductor Laser for Outputting Beam of Single Wavelength 有权
标题翻译：分布式反馈半导体激光器输出单波长光束
公开(公告)号：EP1376789A2
公开(公告)日：2004-01-02
申请号：EP03013736.8
申请日：2003-06-17
申请人： ANRITSU CORPORATION
发明人： Mori, Hiroshi , Kikugawa, Tomoyuki , Takahashi, Yoshio , Fujita, Motoaki
IPC分类号： H01S5/12
CPC分类号： H01S5/12 , H01S5/0654 , H01S5/1203 , H01S5/1225 , H01S5/1231 , H01S5/124 , H01S5/1243
摘要： A distributed feedback semiconductor laser includes a semiconductor substrate (11), first and second diffraction grating layers (12a, 12b), a connecting layer (13), an active layer (18) and a cladding layer (19). The first and second diffraction grating layers (12a, 12b) are provided above the semiconductor substrate (11), and spaced from each other in an output direction of a beam (23). The connecting layer (13) is flat and sandwiched between the first and second diffraction grating layers (12a, 12b). The active layer (18) is disposed above or below the first and second diffraction grating layers (12a, 12b) and the connecting layer (13). The cladding layer (19) is disposed above the active layer (18) or above the first and second diffraction grating layers (12a, 12b) and the connecting layer (f). A diffraction grating (16) including the first and second diffraction grating layers (12a, 12b) has a plurality of slits (15) penetrating from an upper surface to a lower surface and perpendicular to the output direction of the beam (23). The connecting layer (13) is formed from two layers (13a, 13b) grown epitaxially in a direction perpendicular to the output direction of the beam (23). One (13a) of the two layers is formed of the same material as the first and second diffraction grating layers.
摘要翻译：分布反馈半导体激光器包括半导体衬底（11），第一和第二衍射光栅层（12a，12b），连接层（13），有源层（18）和包层（19）。第一和第二衍射光栅层（12a，12b）设置在半导体衬底（11）的上方，并且在光束（23）的输出方向上彼此间隔开。连接层（13）是平坦的并夹在第一和第二衍射光栅层（12a，12b）之间。有源层（18）设置在第一和第二衍射光栅层（12a，12b）和连接层（13）的上方或下方。包层（19）设置在有源层（18）的上方或第一和第二衍射光栅层（12a，12b）和连接层（f）的上方。包括第一衍射光栅层和第二衍射光栅层（12a，12b）的衍射光栅（16）具有多个狭缝（15），所述狭缝从上表面贯穿到下表面并垂直于光束（23）的输出方向。连接层（13）由在与光束（23）的输出方向垂直的方向上外延生长的两层（13a，13b）形成。两层中的一个（13a）由与第一和第二衍射光栅层相同的材料形成。

9. 发明公开

EP1317034A2 Semiconductor laser comprising low reflectivity coatings 审中-公开
标题翻译： Halbleiterlaser mit Beschichtung mit niedrigemReflektionsvermögen
公开(公告)号：EP1317034A2
公开(公告)日：2003-06-04
申请号：EP02257522.9
申请日：2002-10-30
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Yoon, Young D., c/o The Furukawa Electric Co., Ltd , Sugihara, S., c/o The Furukawa Electric Co., Ltd. , Tsukiji, Naoki, c/o The Furukawa Electric Co., Ltd
IPC分类号： H01S5/028
CPC分类号： B82Y20/00 , H01S5/02208 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/028 , H01S5/12 , H01S5/1203 , H01S5/146 , H01S5/3409
摘要： An n-InP cladding layer, a GRIN-SCH-MQW active layer, a p-InP cladding layer, p-InGaAsP contact layer and a p-side electrode are laminated sequentially on an n-InP substrate. Moreover, a film having high reflectivity is laminated on a reflection side end surface, and a transmission film is laminated on an emission side end surface. The transmission film has a first film and a second film. The second film is composed of an equivalent film composed of three layers.
摘要翻译：将n-InP包层，GRIN-SCH-MQW有源层，p-InP包层，p-InGaAsP接触层和p侧电极依次层叠在n-InP基板上。此外，在反射侧端面层叠具有高反射率的膜，并且在发射侧端面层叠透射膜。透射膜具有第一膜和第二膜。第二层膜由三层组成的等效膜组成。

10. 发明公开

EP1300703A2 Semiconductor laser module and method for simultaneously reducing relative intensity noise and stimulated Brillouin scattering 审中-公开
标题翻译：一种半导体激光器模块和方法，用于相对强度噪声的同时减少，并且受激布里渊散射
公开(公告)号：EP1300703A2
公开(公告)日：2003-04-09
申请号：EP02256781.2
申请日：2002-09-27
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Tsukiji, Naoki , Yoshida, Junji , Kimura, Toshio , Kado, Souko
IPC分类号： G02B6/12 , H01L27/00
CPC分类号： H04B10/2537 , G02B6/266 , G02B6/4201 , G02B6/4208 , G02B6/4215 , G02B6/4269 , G02B6/4271 , G02B6/4286 , H01S3/094011 , H01S3/094096 , H01S3/09415 , H01S3/302 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/0683 , H01S5/1203 , H01S5/1215
摘要： A semiconductor laser module including a semiconductor laser device having an integrated diffraction grating configured to output a multiple mode laser beam in the presence of a driving current, an optical fiber configured to guide the multiple mode laser beam to an output of the laser module, and an optical attenuation device configured to attenuate the multiple mode laser beam by an amount sufficient to provide a predetermined output power from the output of the laser module. The optical attenuation device may be an optical coupling lens offset from an optimum coupling position by an amount sufficient to provide the predetermined output power, or an optical attenuator interrupting the optical fiber and configured to attenuate the multiple mode laser beam by an amount sufficient to provide the predetermined output power. Also, a two fiber Raman amplifier having a super large area (SLA) fiber that provides amplification of the signal based primarily on the forward excitation light can also be used to suppress SBS.
摘要翻译：一种半导体激光器模块（50），其包括具有集成在衍射光栅中的驱动电流的存在下的光纤（55）被配置为输出多个模式的激光束配置为引导所述多个半导体激光装置（51）（45）模式激光束，以在激光模块（50）的输出，并配置由在量足以从激光器模块的输出提供预定的输出功率，以衰减所述多个模式的激光束的光学衰减装置（1010）（50），光衰减器（1010）可以是在量足以提供预定的输出功率，或光衰减器（50B）中断光纤（55A），并配置为通过从在最佳耦合位置偏移的光耦合透镜（54）通过在用量足以提供预定的输出功率衰减多模式激光束。所以，具有超大面积（SLA）光纤（64A）做了两个光纤喇曼放大器提供因此基于正向主要激发光信号的放大可用于抑制受激布里渊散射。

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