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1. 发明授权

EP0766107B1 Semiconductor laser module 失效
公开(公告)号：EP0766107B1
公开(公告)日：2003-11-19
申请号：EP96115040.6
申请日：1996-09-19
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Aikiyo, Takeshi , Kimura, Toshio, Furukawa Denki Kogyo , Shirasaka, Yusei c/o Optical Dev.Dept.-Telecom.Grp
IPC分类号： G02B6/26 , G02B6/42
CPC分类号： G02B6/262 , G02B6/4204

2. 发明公开

EP1233490A2 Semiconductor laser module and fiber amplifier and optical communications system using the same 审中-公开
标题翻译： Halbleiterlasermodul undPhaserverstärkerund optisches Kommunikationssytem unter Verwendung desselben
公开(公告)号：EP1233490A2
公开(公告)日：2002-08-21
申请号：EP02001930.3
申请日：2002-01-31
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Yoshida, Junji , Tsukiji, Naoki , Aikiyo, Takeshi , Koyanagi, Satoshi
IPC分类号： H01S5/14 , H01S3/067 , H01S3/094
CPC分类号： H01S5/146 , H01S5/02284 , H01S5/0287 , H01S5/1039 , H01S5/227
摘要： Disclosed is a semiconductor laser module which is advantageous as a pumping source for Raman amplification because of its high optical output and excellent wavelength stability. The module comprises a Fabry-Pérot semiconductor laser device to which a fiber Bragg grating having a wavelength selectivity and showing a specific reflectivity with respect to a specific wavelength is optically coupled, wherein given that a cavity length of the semiconductor laser device is L (µm), a reflection bandwidth of the fiber Bragg grating is Δλ (nm) and a reflectivity of said front facet is R 1 (%) and a peak reflectivity of said optical feedback part is R 2 (%), following equations are satisfied among L, R 1 and R 2
1000 µm ≤ L ≤ 3500 µm,
0.01% ≤ R 1 + c 2 R 2 ≤ 4% and
R 1 /R 2 ≤ 0.8
where c represents a coupling efficiency between the semiconductor laser device and the fiber Bragg grating. It is preferable that 0.2 nm ≤ Δλ ≤ 3 nm should be satisfied.
摘要翻译：公开了一种半导体激光器模块，其由于其高的光输出和优异的波长稳定性而作为用于拉曼放大的泵浦源是有利的。该模块包括Fabry-Pérot半导体激光器件，其上具有波长选择性并且显示相对于特定波长的特定反射率的光纤布拉格光栅被光耦合，其中，如果半导体激光器件的腔长度为L（mu m）时，光纤布拉格光栅的反射带宽为Δλλ（nm），前面的反射率为R1（％），光反馈部的峰值反射率为R2（％），L ，R1和R2为1000μm≤L≤300μm，0.01％≤R1+c2R2≤4％，R1 /R2≤0.8，其中c表示半导体激光器件和光纤布拉格光栅之间的耦合效率。优选0.2nm≤DΔTA≤3nm应满足。

3. 发明公开

EP0766107A1 Semiconductor laser module 失效
标题翻译： Halbleiterlasermodul
公开(公告)号：EP0766107A1
公开(公告)日：1997-04-02
申请号：EP96115040.6
申请日：1996-09-19
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Aikiyo, Takeshi , Kimura, Toshio, Furukawa Denki Kogyo , Shirasaka, Yusei c/o Optical Dev.Dept.-Telecom.Grp
IPC分类号： G02B6/26 , G02B6/42
CPC分类号： G02B6/262 , G02B6/4204
摘要： A semiconductor laser module(10) which couples a beam emitted from a semiconductor laser(11) with a core expanded fiber(14) having a single-mode fiber end whose core diameter is expanded, by a lens system having a first and a second lenses(12,13). The core expanded fiber(14) is set so as to have a core expansion coefficient of 1.3 or more and an absolute value of change rate of mode field diameter smaller than 6.0 x 10 -4 µm -1 .
摘要翻译：一种半导体激光器模块（10），其通过具有第一和第二透镜的透镜系统将从半导体激光器（11）发射的光束与具有芯径扩展的单模光纤端口的芯扩展光纤（14）透镜（12,13）。芯扩展光纤（14）的芯扩展系数为1.3以上，模场直径的变化率的绝对值小于6.0×10 -4 m -1。

4. 发明授权

EP1215783B1 Semiconductor laser module, manufacturing method thereof and optical amplifier 有权
标题翻译：一种半导体激光器模块，光放大器和制造工艺
公开(公告)号：EP1215783B1
公开(公告)日：2010-10-13
申请号：EP01129992.2
申请日：2001-12-17
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Kimura, Toshio , Nakae, Masashi , Shimizu, Takeo , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B27/10 , G02B6/42
CPC分类号： H01S5/02248 , G02B6/4206 , G02B6/4218 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4068 , H01S5/4087

5. 发明公开

EP1233490A3 Semiconductor laser module and fiber amplifier and optical communications system using the same 审中-公开
标题翻译：相同的半导体激光器模块和移相器放大器和使用光学通信系统的
公开(公告)号：EP1233490A3
公开(公告)日：2004-05-26
申请号：EP02001930.3
申请日：2002-01-31
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Yoshida, Junji , Tsukiji, Naoki , Aikiyo, Takeshi , Koyanagi, Satoshi
IPC分类号： H01S5/14
CPC分类号： H01S5/146 , H01S5/02284 , H01S5/0287 , H01S5/1039 , H01S5/227
摘要： Disclosed is a semiconductor laser module which is advantageous as a pumping source for Raman amplification because of its high optical output and excellent wavelength stability. The module comprises a Fabry-Pérot semiconductor laser device to which a fiber Bragg grating having a wavelength selectivity and showing a specific reflectivity with respect to a specific wavelength is optically coupled, wherein given that a cavity length of the semiconductor laser device is L (µm), a reflection bandwidth of the fiber Bragg grating is Δλ (nm) and a reflectivity of said front facet is R 1 (%) and a peak reflectivity of said optical feedback part is R 2 (%), following equations are satisfied among L, R 1 and R 2 1000 µm ≤ L ≤ 3500 µm, 0.01% ≤ R 1 + c 2 R 2 ≤ 4% and R 1 /R 2 ≤ 0.8 where c represents a coupling efficiency between the semiconductor laser device and the fiber Bragg grating. It is preferable that 0.2 nm ≤ Δλ ≤ 3 nm should be satisfied.

6. 发明公开

EP1215784A2 Semiconductor laser device for use in a semiconductor laser module and optical amplifier 审中-公开
标题翻译：用于半导体激光器模块和光放大器的半导体激光装置
公开(公告)号：EP1215784A2
公开(公告)日：2002-06-19
申请号：EP01129993.0
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Kimura, Toshio , Aikiyo, Takeshi , Shimizu, Takeo , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B6/42 , G02B27/10
CPC分类号： G02B6/4218 , B82Y20/00 , G02B6/4206 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S3/302 , H01S5/005 , H01S5/02208 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1039 , H01S5/1085 , H01S5/1092 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/125 , H01S5/146 , H01S5/22 , H01S5/227 , H01S5/3215 , H01S5/3409 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A single semiconductor laser device (2) used in a semiconductor laser module of an optical amplifier (48) and having a first light emitting stripe (9) with a diffraction grating (75) and at least one other light emitting stripe (10) with a diffraction grating (75) and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.

7. 发明公开

EP1215784A3 Semiconductor laser device for use in a semiconductor laser module and optical amplifier 审中-公开
标题翻译： Halbleiterlaservorrichtungfürein Halbleiterlasermodul und OptischenVerstärker
公开(公告)号：EP1215784A3
公开(公告)日：2004-01-07
申请号：EP01129993.0
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Kimura, Toshio , Aikiyo, Takeshi , Shimizu, Takeo , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B6/42 , G02B27/10
CPC分类号： G02B6/4218 , B82Y20/00 , G02B6/4206 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S3/302 , H01S5/005 , H01S5/02208 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1039 , H01S5/1085 , H01S5/1092 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/125 , H01S5/146 , H01S5/22 , H01S5/227 , H01S5/3215 , H01S5/3409 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A single semiconductor laser device (2) used in a semiconductor laser module of an optical amplifier (48) and having a first light emitting stripe (9) with a diffraction grating (75) and at least one other light emitting stripe (10) with a diffraction grating (75) and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.
摘要翻译：一种用于光放大器（48）的半导体激光器模块并且具有带有衍射光栅（75）的第一发光条纹（9）和至少一个其它发光条纹（10）的单个半导体激光器件（2）衍射光栅（75），并且它们对准以分别发射第一激光束和至少一个其它激光束通过一个边缘表面。

8. 发明公开

EP1215782A3 An integrated laser beam synthesizing module for use in a semiconductor laser module and an optical amplifier 审中-公开
标题翻译：为激光的合成集成模块梁用于半导体激光器模块和光放大器
公开(公告)号：EP1215782A3
公开(公告)日：2004-01-07
申请号：EP01129968.2
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Yamamoto, Toshiro , Toratani, Tomoaki , Kimura, Toshio , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Shimizu, Takeo , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , G02B6/42 , G02B27/10
CPC分类号： H01S5/4068 , H01S3/094096 , H01S3/09415 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A laser beam synthesizing member 60 of a semiconductor laser module used as an optical amplifier 48 that has a prism 5 configured to correct respective optical paths of a plurality of laser beams, a beam synthesizing member 7 configured to synthesize the plurality of laser beams once passed from the prism, and a holder member 61 configured to integrally hold the prism and the beam synthesizing member, and where the beam synthesizing member has a first input part 7a on which a first laser beam is incident, at least one other input part 7b on which an other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.
摘要翻译：的激光束合成用作光放大器48的半导体激光器模块的部件60并有一个棱镜5被配置为校正激光束的多个respectivement光路，光束合成部件7被配置为合成的激光束的多元性一旦通过从棱镜，并且被配置成整体保持有棱镜和光束合成部件的保持器部件61，并且其中所述光束合成构件具有在其上的第一激光束入射时，至少一个其他的输入部7b上的第一输入部7a 这在其他激光束入射，以及输出部，其从所述第一激光束从所述第一输入部分和其它激光束从所述至少一个其他输入部新兴新兴被多路复用并发射为多路复用的激光束。

9. 发明公开

EP1215782A2 An integrated laser beam synthesizing module for use in a semiconductor laser module and an optical amplifier 审中-公开
标题翻译：为激光的合成集成模块梁用于半导体激光器模块和光放大器
公开(公告)号：EP1215782A2
公开(公告)日：2002-06-19
申请号：EP01129968.2
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Yamamoto, Toshiro , Toratani, Tomoaki , Kimura, Toshio , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Shimizu, Takeo , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , G02B6/42 , G02B27/10
CPC分类号： H01S5/4068 , H01S3/094096 , H01S3/09415 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A laser beam synthesizing member 60 of a semiconductor laser module used as an optical amplifier 48 that has a prism 5 configured to correct respective optical paths of a plurality of laser beams, a beam synthesizing member 7 configured to synthesize the plurality of laser beams once passed from the prism, and a holder member 61 configured to integrally hold the prism and the beam synthesizing member, and where the beam synthesizing member has a first input part 7a on which a first laser beam is incident, at least one other input part 7b on which an other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.

10. 发明公开

EP1215783A3 Semiconductor laser module, manufacturing method thereof and optical amplifier 有权
标题翻译：一种半导体激光器模块，光放大器和制造工艺
公开(公告)号：EP1215783A3
公开(公告)日：2004-01-14
申请号：EP01129992.2
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Kimura, Toshio , Nakae, Masashi , Shimizu, Takeo , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B27/10 , G02B6/42
CPC分类号： H01S5/02248 , G02B6/4206 , G02B6/4218 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4068 , H01S5/4087
摘要： A semiconductor laser module M includes a single semiconductor laser device 2 having a first light emitting stripe 9 and at least one other light emitting stripe 10 which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens 4 positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam. An optical fiber 8 is positioned to receive the multiplexed laser beam therein.

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