专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP1202407A3 Semiconductor laser device for use as a pumping light source 有权
标题翻译： Halbleiterlaservorrichtung zur Verwendung als Pumplichtquelle
公开(公告)号：EP1202407A3
公开(公告)日：2003-12-03
申请号：EP01114717.0
申请日：2001-06-21
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki
IPC分类号： H01S5/12 , H01S3/30
CPC分类号： H01S5/227 , H01S3/094003 , H01S3/302 , H01S5/02415 , H01S5/02438 , H01S5/0287 , H01S5/1212 , H01S5/1215 , H01S5/1225
摘要： A semiconductor laser device, module, and method for providing light suitable for providing an excitation light source for a Raman amplifier. The semiconductor laser device includes an active layer configured to radiate light, a spacer layer in contact with the active layer and a diffraction grating formed within the spacer layer, and configured to emit a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. A plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum is provided by changing a wavelength interval between the longitudinal modes and/or widening the predetermined spectral width of the oscillation wavelength spectrum. The wavelength interval is set by the length of a resonator cavity within the semiconductor laser device, while the predetermined spectral width of the oscillation wavelength spectrum is set by either shortening the diffraction grating or varying a pitch of the grating elements within the diffraction grating.
摘要翻译：一种用于提供适于为拉曼放大器提供激发光源的光的半导体激光器件，模块和方法。半导体激光器件包括被配置为辐射光的有源层，与有源层接触的间隔层和形成在间隔层内的衍射光栅，并且被配置为发射具有预定光谱宽度内的多个纵向模式的光束的半导体器件的振荡波长谱。通过改变纵向模式之间的波长间隔和/或加宽振荡波长频谱的预定频谱宽度来提供在振荡波长频谱的预定频谱宽度内的多个纵向模式。波长间隔由半导体激光器件内的谐振器腔的长度设定，而通过缩短衍射光栅或改变衍射光栅内的光栅元件的间距来设定振荡波长光谱的预定光谱宽度。

2. 发明公开

EP1233490A2 Semiconductor laser module and fiber amplifier and optical communications system using the same 审中-公开
标题翻译： Halbleiterlasermodul undPhaserverstärkerund optisches Kommunikationssytem unter Verwendung desselben
公开(公告)号：EP1233490A2
公开(公告)日：2002-08-21
申请号：EP02001930.3
申请日：2002-01-31
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Yoshida, Junji , Tsukiji, Naoki , Aikiyo, Takeshi , Koyanagi, Satoshi
IPC分类号： H01S5/14 , H01S3/067 , H01S3/094
CPC分类号： H01S5/146 , H01S5/02284 , H01S5/0287 , H01S5/1039 , H01S5/227
摘要： Disclosed is a semiconductor laser module which is advantageous as a pumping source for Raman amplification because of its high optical output and excellent wavelength stability. The module comprises a Fabry-Pérot semiconductor laser device to which a fiber Bragg grating having a wavelength selectivity and showing a specific reflectivity with respect to a specific wavelength is optically coupled, wherein given that a cavity length of the semiconductor laser device is L (µm), a reflection bandwidth of the fiber Bragg grating is Δλ (nm) and a reflectivity of said front facet is R 1 (%) and a peak reflectivity of said optical feedback part is R 2 (%), following equations are satisfied among L, R 1 and R 2
1000 µm ≤ L ≤ 3500 µm,
0.01% ≤ R 1 + c 2 R 2 ≤ 4% and
R 1 /R 2 ≤ 0.8
where c represents a coupling efficiency between the semiconductor laser device and the fiber Bragg grating. It is preferable that 0.2 nm ≤ Δλ ≤ 3 nm should be satisfied.
摘要翻译：公开了一种半导体激光器模块，其由于其高的光输出和优异的波长稳定性而作为用于拉曼放大的泵浦源是有利的。该模块包括Fabry-Pérot半导体激光器件，其上具有波长选择性并且显示相对于特定波长的特定反射率的光纤布拉格光栅被光耦合，其中，如果半导体激光器件的腔长度为L（mu m）时，光纤布拉格光栅的反射带宽为Δλλ（nm），前面的反射率为R1（％），光反馈部的峰值反射率为R2（％），L ，R1和R2为1000μm≤L≤300μm，0.01％≤R1+c2R2≤4％，R1 /R2≤0.8，其中c表示半导体激光器件和光纤布拉格光栅之间的耦合效率。优选0.2nm≤DΔTA≤3nm应满足。

3. 发明公开

EP1255332A3 Semiconductor laser device and drive control method for a semiconductor laser device 审中-公开
标题翻译：半导体激光装置和驱动控制方法，用于在半导体激光装置
公开(公告)号：EP1255332A3
公开(公告)日：2003-12-03
申请号：EP01125409.1
申请日：2001-10-31
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Tsukiji, Naoki , Kimura, Toshio
IPC分类号： H01S5/024 , H01S5/068
CPC分类号： H01S5/06804 , H01S5/0014 , H01S5/02415 , H01S5/0617 , H01S5/06808
摘要： A semiconductor laser device including a semiconductor laser element, a temperature measuring element to measure a temperature, and a temperature regulating unit having the laser element and the temperature measuring element thermally connected thereto. The laser device includes a current detecting unit to detect a driving current applied to the laser element, and a control unit to control the temperature regulating unit using a control function to achieve a substantially constant wavelength output from the laser element. The control function defines a relationship between a predetermined driving current and a predetermined temperature. The control unit is configured to control the temperature regulating unit such that the detected temperature substantially equals the predetermined temperature corresponding to the detected driving current as defined by the control function.

4. 发明公开

EP1255336A2 Semiconductor laser device having a diffraction grating on a light emission side 审中-公开
$Semiconductor laser device having a diffraction grating on a light emission side$
标题翻译：在发光侧具有衍射光栅的半导体激光装置
公开(公告)号：EP1255336A2
公开(公告)日：2002-11-06
申请号：EP01129378.4
申请日：2001-12-18
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Yoshida, Junji , Tsukiji, Naoki , Funabashi, Masaki
IPC分类号： H01S5/125 , H01S5/10 , H01S5/14 , H04B10/14
CPC分类号： H01S5/125 , H01S3/094003 , H01S3/09415 , H01S5/1021 , H01S5/1039 , H01S5/1212 , H01S5/1215 , H01S5/141 , H01S5/146
摘要： A semiconductor device and method for providing a light source suitable for use as a pumping light source in a Raman amplification system are provided. The device upon which the method is based includes an active layer configured to radiate light; a light reflecting facet positioned on a first side of the active layer; a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet; and a partial diffraction grating having a predetermined length and positioned on a light emission side of the resonator. The predetermined length of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavity, or in relation to a coupling coefficient κi of the partial diffraction grating.
摘要翻译：提供了一种用于提供适合用作拉曼放大系统中的泵浦光源的光源的半导体器件和方法。该方法所基于的装置包括被配置为发射光的有源层; 位于有源层的第一侧上的光反射小面; 位于所述有源层的第二侧上的发光小平面，从而在所述光反射小面和所述发光小平面之间形成谐振腔; 以及具有预定长度并位于谐振器的光发射侧的部分衍射光栅。部分衍射光栅的预定长度被选择为使得半导体器件发射具有在半导体器件的振荡波长谱的预定谱宽内的多个纵向模式的光束。部分衍射光栅的预定长度可以相对于谐振腔的长度或与部分衍射光栅的耦合系数κi相关地设定。

5. 发明公开

EP1255332A2 Semiconductor laser device and drive control method for a semiconductor laser device 审中-公开
标题翻译： Halbleiterlaservorrichtung und Treiberkontrollverfahrenfüreine Halbleiterlaservorrichtung
公开(公告)号：EP1255332A2
公开(公告)日：2002-11-06
申请号：EP01125409.1
申请日：2001-10-31
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Tsukiji, Naoki , Kimura, Toshio
IPC分类号： H01S5/024 , H01S5/068
CPC分类号： H01S5/06804 , H01S5/0014 , H01S5/02415 , H01S5/0617 , H01S5/06808
摘要： A semiconductor laser device including a semiconductor laser element, a temperature measuring element to measure a temperature, and a temperature regulating unit having the laser element and the temperature measuring element thermally connected thereto. The laser device includes a current detecting unit to detect a driving current applied to the laser element, and a control unit to control the temperature regulating unit using a control function to achieve a substantially constant wavelength output from the laser element. The control function defines a relationship between a predetermined driving current and a predetermined temperature. The control unit is configured to control the temperature regulating unit such that the detected temperature substantially equals the predetermined temperature corresponding to the detected driving current as defined by the control function.
摘要翻译：包括半导体激光元件，测量温度的温度测量元件和具有与其热连接的激光元件和温度测量元件的温度调节单元的半导体激光器件。激光装置包括：电流检测单元，用于检测施加到激光元件的驱动电流;以及控制单元，其使用控制功能来控制温度调节单元，以实现从激光元件输出的基本恒定的波长。控制功能定义预定驱动电流和预定温度之间的关系。控制单元被配置为控制温度调节单元，使得检测到的温度基本上等于与由控制功能定义的检测到的驱动电流相对应的预定温度。

6. 发明公开

EP1239561A2 Semiconductor laser device and semiconductor laser module 审中-公开
标题翻译：半导体激光装置和模块
公开(公告)号：EP1239561A2
公开(公告)日：2002-09-11
申请号：EP02004343.6
申请日：2002-03-01
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Wakisaka, Tsuyoshi , Tsukiji, Naoki , Yoshida, Junji
IPC分类号： H01S5/024
CPC分类号： H01S5/02415 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2924/19107 , H01S5/005 , H01S5/02236 , H01S5/02248 , H01S5/02276 , H01S5/02284 , H01S5/02438 , H01S5/02492 , H01S5/06804 , H01L2924/00014
摘要： A semiconductor laser element for outputting a laser beam, a thermistor for measuring the temperature of the semiconductor laser element, and a carrier having an insulating characteristic and a high heat conductivity, in which the semiconductor laser element and the thermistor are joined to the carrier through a multi-layer film including a gold film so that the temperature of the semiconductor laser element is accurately measured and controlled.

7. 发明授权

EP1215783B1 Semiconductor laser module, manufacturing method thereof and optical amplifier 有权
标题翻译：一种半导体激光器模块，光放大器和制造工艺
公开(公告)号：EP1215783B1
公开(公告)日：2010-10-13
申请号：EP01129992.2
申请日：2001-12-17
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Kimura, Toshio , Nakae, Masashi , Shimizu, Takeo , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B27/10 , G02B6/42
CPC分类号： H01S5/02248 , G02B6/4206 , G02B6/4218 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4068 , H01S5/4087

8. 发明授权

EP1202407B1 Semiconductor laser device for use as a pumping light source 有权
标题翻译：用作泵浦光源的半导体激光装置
公开(公告)号：EP1202407B1
公开(公告)日：2006-07-26
申请号：EP01114717.0
申请日：2001-06-21
申请人： The Furukawa Electric Co., Ltd.
发明人： Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki
IPC分类号： H01S5/12 , H01S3/30
CPC分类号： H01S5/227 , H01S3/094003 , H01S3/302 , H01S5/02415 , H01S5/02438 , H01S5/0287 , H01S5/1212 , H01S5/1215 , H01S5/1225

9. 发明公开

EP1233490A3 Semiconductor laser module and fiber amplifier and optical communications system using the same 审中-公开
标题翻译：相同的半导体激光器模块和移相器放大器和使用光学通信系统的
公开(公告)号：EP1233490A3
公开(公告)日：2004-05-26
申请号：EP02001930.3
申请日：2002-01-31
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Yoshida, Junji , Tsukiji, Naoki , Aikiyo, Takeshi , Koyanagi, Satoshi
IPC分类号： H01S5/14
CPC分类号： H01S5/146 , H01S5/02284 , H01S5/0287 , H01S5/1039 , H01S5/227
摘要： Disclosed is a semiconductor laser module which is advantageous as a pumping source for Raman amplification because of its high optical output and excellent wavelength stability. The module comprises a Fabry-Pérot semiconductor laser device to which a fiber Bragg grating having a wavelength selectivity and showing a specific reflectivity with respect to a specific wavelength is optically coupled, wherein given that a cavity length of the semiconductor laser device is L (µm), a reflection bandwidth of the fiber Bragg grating is Δλ (nm) and a reflectivity of said front facet is R 1 (%) and a peak reflectivity of said optical feedback part is R 2 (%), following equations are satisfied among L, R 1 and R 2 1000 µm ≤ L ≤ 3500 µm, 0.01% ≤ R 1 + c 2 R 2 ≤ 4% and R 1 /R 2 ≤ 0.8 where c represents a coupling efficiency between the semiconductor laser device and the fiber Bragg grating. It is preferable that 0.2 nm ≤ Δλ ≤ 3 nm should be satisfied.

10. 发明公开

EP1168540A3 Semiconductor laser device 审中-公开
公开(公告)号：EP1168540A3
公开(公告)日：2003-04-02
申请号：EP01113686.8
申请日：2001-06-20
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Yoshida, Junji , Tsukiji, Naoki
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2004 , H01S5/305 , H01S5/3072 , H01S5/3213
摘要： In a III - V semiconductor laser diode, a spacer layer is used between an n-doped cladding layer and an undoped optical confinement layer to mitigate crystal defects that would otherwise be formed at the interface between the layers due to the memory effect associated with doping the cladding layer. The spacer layer is formed of compatible III - V semiconductor compounds and may be either a single layer or a plurality of sublayers. The spacer layer of the present invention also has application to other semiconductor devices where the memory effect causes crystal defects at the interface between two differently doped layers.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式