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1. 发明授权

EP2908392B1 Tunable laser device 有权转让
公开(公告)号：EP2908392B1
公开(公告)日：2018-04-04
申请号：EP14305187.8
申请日：2014-02-13
申请人： ALCATEL LUCENT
发明人： Chimot, Nicolas , Debregeas-Sillard, Hélène
IPC分类号： H01S5/0625 , H01S5/12 , H01S5/10
CPC分类号： H01S5/1225 , H01S5/06258 , H01S5/1064 , H01S5/1215 , H01S5/1228 , H01S5/1237 , H01S5/124
摘要： In an embodiment, the invention provides a tunable laser device comprising a multi-section distributed feedback (DFB) laser having : - A first Bragg section (3) comprising a waveguide (6) and a Bragg grating, - A second Bragg section comprising a waveguide and a Bragg grating, - A phase section (2) being longitudinally located between the first Bragg section and the second Bragg section, the phase section being made of a passive material, each Bragg section having a first longitudinal end joining the phase section and a second longitudinal end opposed to the phase section, Wherein the Bragg grating of at least one Bragg section has a grating coupling coefficient which decreases from the first longitudinal end to the second longitudinal end of said at least one Bragg section.

2. 发明授权

EP1281221B8 IMPROVED MIRROR AND CAVITY DESIGNS FOR SAMPLED-GRATING DISTRIBUTED BRAGG REFLECTOR LASERS 有权
标题翻译：改进的镜子和谐振器版本分布布拉格反射器，TASTGITTER
公开(公告)号：EP1281221B8
公开(公告)日：2008-10-15
申请号：EP01933039.8
申请日：2001-05-04
申请人： JDS Uniphase Corporation
发明人： FISH, Gregory, A. , COLDREN, Larry, A.
IPC分类号： H01S5/125 , H01S5/0625
CPC分类号： B82Y20/00 , H01S5/06256 , H01S5/1209 , H01S5/1225
摘要： A tunable laser comprised of a gain section for creating a light beam by spontaneous emission over a bandwidth, a phase section for controlling the light beam around a center frequency of the bandwidth, a cavity for guiding and reflecting the light beam, a front mirror bounding an end of the cavity, and a back mirror bounding an opposite end of the cavity. The back mirror has a λeffB approximately equal to αTune, where λeffB is an effective coupling constant and αTune is the maximum amount of propagation loss anticipated for an amount of peak tuning required, and a length of the back mirror is made to produce greater than approximately 80 % reflectivity.

3. 发明授权

EP1281221B1 IMPROVED MIRROR AND CAVITY DESIGNS FOR SAMPLED-GRATING DISTRIBUTED BRAGG REFLECTOR LASERS 有权
标题翻译：改进的反射镜和腔体设计用于采样分布式反射器激光器
公开(公告)号：EP1281221B1
公开(公告)日：2008-07-30
申请号：EP01933039.8
申请日：2001-05-04
申请人： Agility Communications, Inc.
发明人： FISH, Gregory, A. , COLDREN, Larry, A.
IPC分类号： H01S5/125 , H01S5/0625
CPC分类号： B82Y20/00 , H01S5/06256 , H01S5/1209 , H01S5/1225
摘要： A tunable laser comprised of a gain section for creating a light beam by spontaneous emission over a bandwidth, a phase section for controlling the light beam around a center frequency of the bandwidth, a cavity for guiding and reflecting the light beam, a front mirror bounding an end of the cavity, and a back mirror bounding an opposite end of the cavity. The back mirror has a λeffB approximately equal to αTune, where λeffB is an effective coupling constant and αTune is the maximum amount of propagation loss anticipated for an amount of peak tuning required, and a length of the back mirror is made to produce greater than approximately 80 % reflectivity.
摘要翻译：一种可调谐激光器，包括：增益部分，用于通过带宽上的自发发射产生光束;相位部分，用于围绕带宽的中心频率控制光束;腔室，用于引导和反射光束;前视镜边界空腔的一端以及限定空腔的相对端的后视镜。后视镜的λeffB近似等于αTune，其中λeffB是有效耦合常数，αTune是所需峰值调谐量预期的最大传播损耗量，并且后视镜的长度产生大于约 80％的反射率。

4. 发明授权

EP1376789B1 Distributed Feedback Semiconductor Laser for Outputting Beam of Single Wavelength 有权
标题翻译： DFB - 半导体激光器，用于产生单一波长的光束
公开(公告)号：EP1376789B1
公开(公告)日：2007-04-18
申请号：EP03013736.8
申请日：2003-06-17
申请人： ANRITSU CORPORATION
发明人： Mori, Hiroshi , Kikugawa, Tomoyuki , Takahashi, Yoshio , Fujita, Motoaki
IPC分类号： H01S5/12
CPC分类号： H01S5/12 , H01S5/0654 , H01S5/1203 , H01S5/1225 , H01S5/1231 , H01S5/124 , H01S5/1243

5. 发明公开

EP1376789A2 Distributed Feedback Semiconductor Laser for Outputting Beam of Single Wavelength 有权
标题翻译：分布式反馈半导体激光器输出单波长光束
公开(公告)号：EP1376789A2
公开(公告)日：2004-01-02
申请号：EP03013736.8
申请日：2003-06-17
申请人： ANRITSU CORPORATION
发明人： Mori, Hiroshi , Kikugawa, Tomoyuki , Takahashi, Yoshio , Fujita, Motoaki
IPC分类号： H01S5/12
CPC分类号： H01S5/12 , H01S5/0654 , H01S5/1203 , H01S5/1225 , H01S5/1231 , H01S5/124 , H01S5/1243
摘要： A distributed feedback semiconductor laser includes a semiconductor substrate (11), first and second diffraction grating layers (12a, 12b), a connecting layer (13), an active layer (18) and a cladding layer (19). The first and second diffraction grating layers (12a, 12b) are provided above the semiconductor substrate (11), and spaced from each other in an output direction of a beam (23). The connecting layer (13) is flat and sandwiched between the first and second diffraction grating layers (12a, 12b). The active layer (18) is disposed above or below the first and second diffraction grating layers (12a, 12b) and the connecting layer (13). The cladding layer (19) is disposed above the active layer (18) or above the first and second diffraction grating layers (12a, 12b) and the connecting layer (f). A diffraction grating (16) including the first and second diffraction grating layers (12a, 12b) has a plurality of slits (15) penetrating from an upper surface to a lower surface and perpendicular to the output direction of the beam (23). The connecting layer (13) is formed from two layers (13a, 13b) grown epitaxially in a direction perpendicular to the output direction of the beam (23). One (13a) of the two layers is formed of the same material as the first and second diffraction grating layers.
摘要翻译：分布反馈半导体激光器包括半导体衬底（11），第一和第二衍射光栅层（12a，12b），连接层（13），有源层（18）和包层（19）。第一和第二衍射光栅层（12a，12b）设置在半导体衬底（11）的上方，并且在光束（23）的输出方向上彼此间隔开。连接层（13）是平坦的并夹在第一和第二衍射光栅层（12a，12b）之间。有源层（18）设置在第一和第二衍射光栅层（12a，12b）和连接层（13）的上方或下方。包层（19）设置在有源层（18）的上方或第一和第二衍射光栅层（12a，12b）和连接层（f）的上方。包括第一衍射光栅层和第二衍射光栅层（12a，12b）的衍射光栅（16）具有多个狭缝（15），所述狭缝从上表面贯穿到下表面并垂直于光束（23）的输出方向。连接层（13）由在与光束（23）的输出方向垂直的方向上外延生长的两层（13a，13b）形成。两层中的一个（13a）由与第一和第二衍射光栅层相同的材料形成。

6. 发明公开

EP1285480A1 EXTERNAL CAVITY LASER 有权
标题翻译：外腔激光器
公开(公告)号：EP1285480A1
公开(公告)日：2003-02-26
申请号：EP01909757.5
申请日：2001-02-15
申请人： Italtel S.p.a.
发明人： CHIARETTI, Guido
IPC分类号： H01S5/14
CPC分类号： H01S5/146 , H01S5/1225
摘要： External cavity laser with reflector in optical wave guide, particularly HDBR laser, with an active element comprising a semiconductor optical amplifying cavity having a low-reflectivity facet (3), for example a Semiconductor Optical Amplifier (SOA) with a facet (30) opposite to said low-reflectivity facet treated with a reflecting coating, or a Fabry-Perot laser, and an external reflector comprising a Bragg grating (70) formed in an optical wave guide (4) near a termination (5), facing said facet, of a segment (5, 6, 7) of said optical wave guide coupled with the facet. The grating has a spatial profile of modulation of the refraction index such that a corresponding optical reflectivity spectrum (A) has an optical bandwidth (W) sufficiently small around a prescribed laser oscillation mode wavelength (ηc) for the laser to oscillate only on the prescribed mode and not on other oscillation modes even in conditions of high-frequency direct modulation.

7. 发明授权

EP0607782B1 Optical dispersion compensator 失效
标题翻译：光学色散补偿器
公开(公告)号：EP0607782B1
公开(公告)日：1999-07-28
申请号：EP94100030.9
申请日：1994-01-03
申请人： Hitachi, Ltd.
发明人： Ido, Tatemi, Hitachi Daini Kyoshinryo , Sano, Hirohisa, Hitachi Koigakuboryo
IPC分类号： H04B10/18 , G02B6/12
CPC分类号： G02B6/12007 , B82Y20/00 , G02B6/124 , G02B6/29394 , G02F1/0147 , G02F1/01708 , G02F1/025 , G02F2001/0151 , G02F2201/30 , H01S5/1212 , H01S5/1215 , H01S5/1225 , H01S5/5045 , H04B10/25133 , H04B2210/252

8. 发明公开

EP0847116A2 Distributed reflector and wavelength-tunable semiconductor laser 失效
标题翻译： Verteiler Reflektor und Halbleiterlaser mit abstimmbarerWellenlänge
公开(公告)号：EP0847116A2
公开(公告)日：1998-06-10
申请号：EP98102645.3
申请日：1993-03-04
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Tohmori, Yuichi , Yoshikuni, Yuzo , Ishii, Hiroyuki , Kano, Fumiyoshi , Tamamura, Toshiaki
IPC分类号： H01S3/085 , H01S3/103 , G02B6/12
CPC分类号： H01S5/12 , G02B6/124 , G02B2006/12107 , G02B2006/12121 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/1218 , H01S5/1225
摘要： A semiconductor laser comprises first and second distributed Bragg reflector diffraction gratings (10a,10b) being intervened by an active region having no diffraction grating; said first and second diffraction gratings (10a,10b) each have a plurality of repeating unit regions repeated at respective periods, thus forming respective modulation periods (Mf,Mr); in each of the repeating unit regions the length of the single period varies in the direction in which light transmits, continuously or at intervals, thereby varying the optical reflectivity of the diffraction gratings (10a,10b) depending on its position in each of its said repeating unit regions; said first and second diffraction gratings reflect light having wavelengths (λ 1 ,λ 2 ,.. and λ' 1 ,λ 2 ,...) slightly differing from each other; and said diffraction grating extends by at least two modulation periods. The application of voltages on said diffraction gratings enables coarse and fine tuning of lasing the wavelength.
摘要翻译：半导体激光器包括由没有衍射光栅的有源区插入的第一和第二分布布拉格反射器衍射光栅（10a，10b）; 所述第一和第二衍射光栅（10a，10b）各自具有在各个周期重复的多个重复单位区域，从而形成相应的调制周期（Mf，Mr）; 在每个重复单元区域中，单个周期的长度在光线连续或间隔的方向上变化，从而根据其衍射光栅（10a，10b）的每个中的位置来改变衍射光栅（10a，10b）的光学反射率重复单位区域; 所述第一和第二衍射光栅反射具有彼此稍微不同的波长（λ1，λ2，...和λ'1，λ2，...）的光; 并且所述衍射光栅延伸至少两个调制周期。在所述衍射光栅上施加电压使得能够粗调和微调激光的波长。

9. 发明公开

EP0732783A1 Semiconductor laser and a method of producing the same 失效
标题翻译： Halbleiterlaser和Verfahren zu seiner Herstellung
公开(公告)号：EP0732783A1
公开(公告)日：1996-09-18
申请号：EP95113049.1
申请日：1995-08-18
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Hisa, Yoshihiro, c/o Mitsubishi Denki K.K.
IPC分类号： H01S3/085 , G02B5/18
CPC分类号： H01S5/12 , H01S5/1225 , H01S5/1231
摘要： A semiconductor laser has a semiconductor substrate (1); an active layer (3) formed indirectly on the semiconductor substrate, which has a smaller energy gap than the semiconductor substrate; a barrier layer (9) formed on the active layer, which has a larger energy gap than the active layer; and an embedded diffraction grating (11) which is composed of a stripe-like material having a width in the direction of the waveguide path, a length in the direction perpendicular to the direction of the waveguide path, and a height, and which is embedded between the barrier layer and a cladding layer having the same composition as the barrier layer so as to extend with a parallel arrangement at a constat pitch (Λ) along the direction of the waveguide path, wherein the height (do) of the stripe-like material is constant and the width (w) is changed in the direction of the waveguide path, or the width (w) of the stripe-like material is constant and the height (do) is changed in the direction of the waveguide.
摘要翻译：半导体激光器具有半导体基板（1）; 间隔地形成在半导体衬底上的与半导体衬底相比具有更小的能隙的有源层（3）; 形成在所述有源层上的阻挡层（9），其具有比所述有源层更大的能隙; 和嵌入式衍射光栅（11），其由在波导路径的方向上具有宽度的条状材料，与波导路径的方向垂直的方向上的长度和高度组成，并且嵌入在所述阻挡层和具有与所述阻挡层相同的组成的包覆层之间，沿着所述波导路径的方向以平行布置以恒定间距（LAMBDA）延伸，其中所述条形的高度（do）材料是恒定的，并且宽度（w）在波导路径的方向上改变，或者条形材料的宽度（w）是恒定的，并且高度（do）在波导的方向上改变。

10. 发明授权

EP0439236B1 Laser structure with distributed feedback and method of manufacturing same 失效
标题翻译：激光结构分布反馈和制造过程。
公开(公告)号：EP0439236B1
公开(公告)日：1995-09-27
申请号：EP91200135.1
申请日：1991-01-23
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW
发明人： Baets, Roeland Gustaaf Frans , Morthier, Geert Jozef Ivo
IPC分类号： H01S3/085 , H01L33/00
CPC分类号： H01S5/12 , H01S5/10 , H01S5/1206 , H01S5/1225

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