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1. 发明公开

EP3413412A2 ELECTRON BEAM PUMPED NON-C-PLANE UV EMITTERS 有权转让
公开(公告)号：EP3413412A2
公开(公告)日：2018-12-12
申请号：EP18169636.0
申请日：2018-04-26
申请人： Palo Alto Research Center, Incorporated
发明人： WUNDERER, Thomas , JOHNSON, Noble M.
IPC分类号： H01S5/343 , H01S5/02 , H01S5/323 , H01L33/16 , H01S5/32 , H01S5/30 , H01L33/32
CPC分类号： H01S5/34333 , H01L33/16 , H01L33/32 , H01S5/0205 , H01S5/04 , H01S5/125 , H01S5/3202 , H01S5/32341 , H01S2304/04
摘要： An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.

2. 发明公开

EP3374809A1 PHOTONIC INTEGRATED DEVICE WITH DIELECTRIC STRUCTURE 审中-公开
公开(公告)号：EP3374809A1
公开(公告)日：2018-09-19
申请号：EP16865086.9
申请日：2016-11-11
申请人： Ring, William S.
发明人： Ring, William S.
IPC分类号： G02B6/122 , G02B6/293
CPC分类号： H01S5/125 , G02B6/00 , G02B6/12007 , G02B6/124 , G02B6/131 , G02B2006/12104 , H01S5/026 , H01S5/0268 , H01S5/0287 , H01S5/1021 , H01S5/124 , H01S5/141 , H01S5/209 , H01S5/2275 , H01S5/343 , H01S5/34306 , H01S5/4087
摘要： A photonic integrated device (PID) for generating single and multiple wavelength optical signals is provided. The PID includes first and second reflective structures having first and second predetermined reflectivities, respectively. A common waveguide is optically coupled to the first reflective structure, and at least one semiconductor waveguide is optically coupled to the second reflective structure. The PID further includes at least one active gain region that is disposed between the first and second reflective structures. In various embodiments, the PID includes at least one of a dielectric waveguide based wavelength dependent element and a dielectric Bragg stack.

3. 发明授权

EP2957004B1 SINGLE-STEP-GROWN TRANSVERSELY COUPLED DISTRIBUTED FEEDBACK LASER 有权
公开(公告)号：EP2957004B1
公开(公告)日：2018-06-06
申请号：EP14706520.5
申请日：2014-02-18
申请人： Innolume GmbH
发明人： GUBENKO, Alexey , LIVSHITS, Daniil , MIKHRIN, Sergey , KRESTNIKOV, Igor
IPC分类号： H01S5/12 , H01S5/187 , H01S5/22 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/30
CPC分类号： H01S5/125 , H01S5/0202 , H01S5/026 , H01S5/06256 , H01S5/1085 , H01S5/12 , H01S5/1221 , H01S5/124 , H01S5/1246 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2215 , H01S5/3054 , H01S5/34313
摘要： A transversely-coupled distributed feedback laser diode, which can be processed without overgrowth, is disclosed. The laser is made from an epitaxial heterostructure including a core layer located between two cladding layers, a cap layer, and at least one Al-rich layer. The lateral waveguide is formed by selective oxidation of the Al-rich layer. A surface corrugated grating is formed above the waveguide. The heteroepitaxial structure is designed so that the core layer is placed in close proximity to the top of the laser structure to provide a required overlap between the light and the grating. In order to avoid inadmissible optical losses, there is no metallization above the waveguide. Instead, the metal contacts are offset at some distance, so that the current has to spread in the cap layer before vertical injection into the core layer.

4. 发明公开

EP3327815A1 LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：EP3327815A1
公开(公告)日：2018-05-30
申请号：EP16201206.6
申请日：2016-11-29
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： LEE, Jeong-Hwan , GENOE, Jan , HEREMANS, Paul , ROLIN, Cedric
IPC分类号： H01L51/52
CPC分类号： H01L51/5296 , H01L51/0052 , H01L51/0068 , H01L51/0081 , H01S5/06203 , H01S5/12 , H01S5/1228 , H01S5/125 , H01S5/3004 , H01S5/36
摘要： A light-emitting device (100) comprises: an active layer (106) comprising at least one semiconductor layer (1 06a-c) for transport of charge carriers and emission of light upon radiative recombination of charge carriers of a first type and a second type, a first gate layer (102), which is arranged to control density of charge carriers of the first type in the active layer (106), a second gate layer (104), which is arranged to control density of charge carriers of the second type in the active layer (106), wherein an insulating layer (112) is arranged on the first gate layer (102) and the second gate layer (104) forms a pattern on the insulating layer (112), and wherein the active layer (106) is arranged on the first (102) and second gate layers (104).

5. 发明公开

EP3248253A2 ARRANGEMENT OF MULTIPLE DIODE LASER MODULE AND METHOD OF OPERATING THE SAME 审中-公开
标题翻译：多个二极管激光模块的布置和操作该多个二极管激光模块的方法
公开(公告)号：EP3248253A2
公开(公告)日：2017-11-29
申请号：EP16702867.9
申请日：2016-01-22
申请人： Trumpf Photonics, Inc.
发明人： LI, Yufeng
IPC分类号： H01S5/022 , H01S5/40 , G02B6/42 , H01S5/00
CPC分类号： H01S5/4012 , G02B6/4214 , G02B6/423 , H01S5/005 , H01S5/0071 , H01S5/02216 , H01S5/02252 , H01S5/02284 , H01S5/125 , H01S5/4018 , H01S5/4031 , H01S5/405
摘要： Apparatus and methods are provided for a laser module with a base including stepped platforms with an offset relative to an adjacent platform, each stepped platform accommodating a laser source. The module has at least a first plurality of stepped platforms and a second plurality of stepped platforms. Each platform accommodates a laser source that is part of a plurality of laser sources. The plurality of laser sources is arranged in a single plane to have each laser source emit laser radiation in the same direction that is perpendicular to the single plane. Laser radiation generated by the laser sources associated with the first plurality of platforms is combined into a first combined beam of laser radiation and the laser radiation generated by the laser sources associated with the second plurality of platforms is combined into a second combined beam of laser radiation. The first and second combined beam of laser radiation are combined by an optical combiner and coupled into an optical fiber.

6. 发明公开

EP3211736A1 SEMICONDUCTOR LASER DIODE AND METHOD OF MANUFACTURE THEREOF 有权转让
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：EP3211736A1
公开(公告)日：2017-08-30
申请号：EP17157316.5
申请日：2017-02-22
申请人： Prima Electro S.p.A.
发明人： PAOLETTI, Roberto , CORIASSO, Claudio , CALEFATI, Paolo
IPC分类号： H01S5/028 , H01S5/125 , H01S5/12 , H01S5/02
CPC分类号： H01S5/34 , H01S5/0206 , H01S5/028 , H01S5/1231 , H01S5/125
摘要： Laser-diode device comprising:
- a substrate;
- at least one first cladding layer placed on the substrate;
- an active layer placed on the first cladding layer and arranged to emit a radiation;
- at least one second cladding layer placed on the active layer, said cladding layers being adapted to form a heterojunction, thereby allowing an efficient injection of current into the active layer and the optical confinement;
- a first terminal facet and a second terminal facet placed transversally relative to the cladding layers and to the active layer, and formed within said layers by means of dry or wet etchings techniques and/or combinations thereof;
- a periodic structure, placed in proximity to the second terminal facet and within the second cladding layer, and belonging to an optical cavity, wherein the first terminal facet represents the output mirror from which the radiation generated by the active layer exits, and the second terminal facet, integrated by the periodic structure, represents a second mirror having high reflectivity, so that the radiation produced by the active layer exits almost totally through the first mirror.
摘要翻译：激光二极管器件，包括： - 衬底; - 至少一个放置在衬底上的第一包层; - 放置在第一包层上并布置成发射辐射的有源层; - 至少一个放置在有源层上的第二包层，所述包层适于形成异质结，从而允许有效地将电流注入到有源层和光限制中; - 第一终端小面和第二终端小面，所述第一终端小面和第二终端小面相对于所述包覆层和所述有源层横向放置，并且借助于干或湿蚀刻技术和/或其组合形成在所述层内; - 周期性结构，放置在第二端子面附近并且在第二包层内，并且属于光学腔，其中第一端面表示输出镜，由有源层产生的辐射从该输出镜出射，并且第二端面由周期性结构整合的末端小面代表具有高反射率的第二反射镜，使得由有源层产生的辐射几乎完全通过第一反射镜射出。

7. 发明公开

EP2414880A4 NARROW SURFACE CORRUGATED GRATING 审中-公开
标题翻译： WELLGITTER MIT SCHMALEROBERFLÄCHE
公开(公告)号：EP2414880A4
公开(公告)日：2017-08-16
申请号：EP10762046
申请日：2010-03-08
申请人： INTEL CORP
发明人： JONES RICHARD
IPC分类号： G02B6/124
CPC分类号： H01S5/1032 , G02B6/124 , G02B6/29325 , H01S5/021 , H01S5/0268 , H01S5/1035 , H01S5/125 , H01S5/4087

8. 发明授权

EP1978612B1 Optical semiconductor device and method of controlling the same 有权转让
标题翻译：光学半导体装置及其控制方法
公开(公告)号：EP1978612B1
公开(公告)日：2017-08-16
申请号：EP08154093.2
申请日：2008-04-04
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Fujii, Takuya
IPC分类号： H01S5/06 , H01S5/0625 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/10 , H01S5/12 , H01S5/125
CPC分类号： H01S5/0612 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/1039 , H01S5/1209 , H01S5/1212 , H01S5/1215 , H01S5/125

9. 发明授权

EP2467909B1 DIODENLASER UND LASERRESONATOR FÜR EINEN DIODENLASER MIT VERBESSERTER LATERALER STRAHLQUALITÄT 有权
标题翻译：二极管和激光谐振器具有改进横向光束质量二极管
公开(公告)号：EP2467909B1
公开(公告)日：2016-07-20
申请号：EP10755118.6
申请日：2010-08-23
申请人： Forschungsverbund Berlin E.V.
发明人： ERBERT, Götz , SPREEMANN, Martin , WENZEL, Hans , FRICKE, Jörg
IPC分类号： H01S5/125 , H01S5/10 , H01S5/20
CPC分类号： H01S5/125 , H01S5/1064 , H01S5/1089 , H01S5/1215 , H01S5/2036 , H01S2301/166

10. 发明公开

EP3007289A1 EXTERNAL RESONATOR-TYPE LIGHT EMITTING DEVICE 有权
标题翻译： LICHTEMITTIERENDE VORRICHTUNG VOM TYP EINES外部谐振器
公开(公告)号：EP3007289A1
公开(公告)日：2016-04-13
申请号：EP14807858.7
申请日：2014-06-04
申请人： NGK Insulators, Ltd.
发明人： KONDO Jungo , YAMAGUCHI Shoichiro , YOSHINO Takashi , TAKEUCHI Yukihisa
IPC分类号： H01S5/14
CPC分类号： H01S5/125 , G02B6/124 , H01S5/02252 , H01S5/0287 , H01S5/1039 , H01S5/141
摘要： An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light soruce. The light source includes an active layer oscillaing the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.
摘要翻译：外部谐振器型发光系统包括振荡半导体激光的光源和提供具有光吸收的外部谐振器的光栅装置。光源包括振荡半导体激光的有源层。光栅装置包括光波导，其具有入射面，半导体激光器入射到入射面，发射出所需波长的发射光的发射面，形成在光波导中的布拉格光栅，以及设置在入射面和布拉格光栅。公式（1）〜（4）。

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