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1. 发明公开

EP1300703A3 Semiconductor laser module and method for simultaneously reducing relative intensity noise and stimulated Brillouin scattering 审中-公开
标题翻译：一种半导体激光器模块和方法，用于相对强度噪声的同时减少，并且受激布里渊散射
公开(公告)号：EP1300703A3
公开(公告)日：2005-04-06
申请号：EP02256781.2
申请日：2002-09-27
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Tsukiji, Naoki , Yoshida, Junji , Kimura, Toshio , Kado, Souko
IPC分类号： G02B6/12 , H01L27/00 , G02B6/42
CPC分类号： H04B10/2537 , G02B6/266 , G02B6/4201 , G02B6/4208 , G02B6/4215 , G02B6/4269 , G02B6/4271 , G02B6/4286 , H01S3/094011 , H01S3/094096 , H01S3/09415 , H01S3/302 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/0683 , H01S5/1203 , H01S5/1215
摘要： A semiconductor laser module (50) including a semiconductor laser device (51) having an integrated diffraction grating (45) configured to output a multiple mode laser beam in the presence of a driving current, an optical fiber (55) configured to guide the multiple mode laser beam to an output of the laser module (50), and an optical attenuation device (1010) configured to attenuate the multiple mode laser beam by an amount sufficient to provide a predetermined output power from the output of the laser module (50). The optical attenuation device (1010) may be an optical coupling lens (54) offset from an optimum coupling position by an amount sufficient to provide the predetermined output power, or an optical attenuator (50b) interrupting the optical fiber (55a) and configured to attenuate the multiple mode laser beam by an amount sufficient to provide the predetermined output power. Also, a two fiber Raman amplifier having a super large area (SLA) fiber (64A) that provides amplification of the signal based primarily on the forward excitation light can also be used to suppress stimulated Brillouin Scattering.

2. 发明公开

EP1215783A3 Semiconductor laser module, manufacturing method thereof and optical amplifier 有权
标题翻译：一种半导体激光器模块，光放大器和制造工艺
公开(公告)号：EP1215783A3
公开(公告)日：2004-01-14
申请号：EP01129992.2
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Kimura, Toshio , Nakae, Masashi , Shimizu, Takeo , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B27/10 , G02B6/42
CPC分类号： H01S5/02248 , G02B6/4206 , G02B6/4218 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4068 , H01S5/4087
摘要： A semiconductor laser module M includes a single semiconductor laser device 2 having a first light emitting stripe 9 and at least one other light emitting stripe 10 which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens 4 positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam. An optical fiber 8 is positioned to receive the multiplexed laser beam therein.

3. 发明公开

EP1215783A2 Semiconductor laser module, manufacturing method thereof and optical amplifier 有权
标题翻译： Halbleiterlasermodul，optischeVerstärkerund Herstellungsverfahren
公开(公告)号：EP1215783A2
公开(公告)日：2002-06-19
申请号：EP01129992.2
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Kimura, Toshio , Nakae, Masashi , Shimizu, Takeo , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B27/10 , G02B6/42
CPC分类号： H01S5/02248 , G02B6/4206 , G02B6/4218 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4068 , H01S5/4087
摘要： A semiconductor laser module M includes a single semiconductor laser device 2 having a first light emitting stripe 9 and at least one other light emitting stripe 10 which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens 4 positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam. An optical fiber 8 is positioned to receive the multiplexed laser beam therein.
摘要翻译：半导体激光器模块M包括具有第一发光条纹9和至少一个其它发光条纹10的单个半导体激光器装置2，其被对准以分别发射第一激光束和至少一个其它激光束通过一个边缘表面。它还包括第一透镜4，其被定位成使得第一激光束和从半导体激光器件发射的至少一个其它激光束入射到其上，第一透镜被配置为将第一激光束和至少一个其它激光束。包括光束合成部件，并且具有第一激光束入射的第一输入部，入射了至少一个其他激光束的至少一个其它输入部，以及第一激光束从该出射部来自第一输入部分和从至少一个其它输入部分出射的至少一个其它激光束被多路复用并作为复用激光束发射。光纤8被定位成在其中接收复用的激光束。

4. 发明公开

EP1255332A3 Semiconductor laser device and drive control method for a semiconductor laser device 审中-公开
标题翻译：半导体激光装置和驱动控制方法，用于在半导体激光装置
公开(公告)号：EP1255332A3
公开(公告)日：2003-12-03
申请号：EP01125409.1
申请日：2001-10-31
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Tsukiji, Naoki , Kimura, Toshio
IPC分类号： H01S5/024 , H01S5/068
CPC分类号： H01S5/06804 , H01S5/0014 , H01S5/02415 , H01S5/0617 , H01S5/06808
摘要： A semiconductor laser device including a semiconductor laser element, a temperature measuring element to measure a temperature, and a temperature regulating unit having the laser element and the temperature measuring element thermally connected thereto. The laser device includes a current detecting unit to detect a driving current applied to the laser element, and a control unit to control the temperature regulating unit using a control function to achieve a substantially constant wavelength output from the laser element. The control function defines a relationship between a predetermined driving current and a predetermined temperature. The control unit is configured to control the temperature regulating unit such that the detected temperature substantially equals the predetermined temperature corresponding to the detected driving current as defined by the control function.

5. 发明公开

EP1255332A2 Semiconductor laser device and drive control method for a semiconductor laser device 审中-公开
标题翻译： Halbleiterlaservorrichtung und Treiberkontrollverfahrenfüreine Halbleiterlaservorrichtung
公开(公告)号：EP1255332A2
公开(公告)日：2002-11-06
申请号：EP01125409.1
申请日：2001-10-31
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Tsukiji, Naoki , Kimura, Toshio
IPC分类号： H01S5/024 , H01S5/068
CPC分类号： H01S5/06804 , H01S5/0014 , H01S5/02415 , H01S5/0617 , H01S5/06808
摘要： A semiconductor laser device including a semiconductor laser element, a temperature measuring element to measure a temperature, and a temperature regulating unit having the laser element and the temperature measuring element thermally connected thereto. The laser device includes a current detecting unit to detect a driving current applied to the laser element, and a control unit to control the temperature regulating unit using a control function to achieve a substantially constant wavelength output from the laser element. The control function defines a relationship between a predetermined driving current and a predetermined temperature. The control unit is configured to control the temperature regulating unit such that the detected temperature substantially equals the predetermined temperature corresponding to the detected driving current as defined by the control function.
摘要翻译：包括半导体激光元件，测量温度的温度测量元件和具有与其热连接的激光元件和温度测量元件的温度调节单元的半导体激光器件。激光装置包括：电流检测单元，用于检测施加到激光元件的驱动电流;以及控制单元，其使用控制功能来控制温度调节单元，以实现从激光元件输出的基本恒定的波长。控制功能定义预定驱动电流和预定温度之间的关系。控制单元被配置为控制温度调节单元，使得检测到的温度基本上等于与由控制功能定义的检测到的驱动电流相对应的预定温度。

6. 发明公开

EP1215778A3 Semiconductor laser apparatus and fabrication method of the same, and semiconductor laser module 审中-公开
标题翻译：一种半导体激光器件，其制备方法和半导体激光器模块处理
公开(公告)号：EP1215778A3
公开(公告)日：2004-11-03
申请号：EP01111237.2
申请日：2001-05-15
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Yoshida, Junji , Tsukiji, Naoki , Kimura, Toshio
IPC分类号： H01S5/10
CPC分类号： H01S5/0607 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/0617 , H01S5/062 , H01S5/06804 , H01S5/1039
摘要： A cavity length is determined on the basis of a relationship of electric drive power to a range of optical output power over 50 mW, for cavity length to be constant as a parameter in a range over 1000 µm, so that the electric drive power is vicinal to a minimum thereof in correspondence to a desirable optical output power. If the optical output is 360 mW for example, a cavity length of 1500 µm is determined to be selected.

7. 发明公开

EP1215784A3 Semiconductor laser device for use in a semiconductor laser module and optical amplifier 审中-公开
标题翻译： Halbleiterlaservorrichtungfürein Halbleiterlasermodul und OptischenVerstärker
公开(公告)号：EP1215784A3
公开(公告)日：2004-01-07
申请号：EP01129993.0
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Kimura, Toshio , Aikiyo, Takeshi , Shimizu, Takeo , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B6/42 , G02B27/10
CPC分类号： G02B6/4218 , B82Y20/00 , G02B6/4206 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S3/302 , H01S5/005 , H01S5/02208 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1039 , H01S5/1085 , H01S5/1092 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/125 , H01S5/146 , H01S5/22 , H01S5/227 , H01S5/3215 , H01S5/3409 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A single semiconductor laser device (2) used in a semiconductor laser module of an optical amplifier (48) and having a first light emitting stripe (9) with a diffraction grating (75) and at least one other light emitting stripe (10) with a diffraction grating (75) and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.
摘要翻译：一种用于光放大器（48）的半导体激光器模块并且具有带有衍射光栅（75）的第一发光条纹（9）和至少一个其它发光条纹（10）的单个半导体激光器件（2）衍射光栅（75），并且它们对准以分别发射第一激光束和至少一个其它激光束通过一个边缘表面。

8. 发明公开

EP1215782A3 An integrated laser beam synthesizing module for use in a semiconductor laser module and an optical amplifier 审中-公开
标题翻译：为激光的合成集成模块梁用于半导体激光器模块和光放大器
公开(公告)号：EP1215782A3
公开(公告)日：2004-01-07
申请号：EP01129968.2
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Yamamoto, Toshiro , Toratani, Tomoaki , Kimura, Toshio , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Shimizu, Takeo , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , G02B6/42 , G02B27/10
CPC分类号： H01S5/4068 , H01S3/094096 , H01S3/09415 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A laser beam synthesizing member 60 of a semiconductor laser module used as an optical amplifier 48 that has a prism 5 configured to correct respective optical paths of a plurality of laser beams, a beam synthesizing member 7 configured to synthesize the plurality of laser beams once passed from the prism, and a holder member 61 configured to integrally hold the prism and the beam synthesizing member, and where the beam synthesizing member has a first input part 7a on which a first laser beam is incident, at least one other input part 7b on which an other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.
摘要翻译：的激光束合成用作光放大器48的半导体激光器模块的部件60并有一个棱镜5被配置为校正激光束的多个respectivement光路，光束合成部件7被配置为合成的激光束的多元性一旦通过从棱镜，并且被配置成整体保持有棱镜和光束合成部件的保持器部件61，并且其中所述光束合成构件具有在其上的第一激光束入射时，至少一个其他的输入部7b上的第一输入部7a 这在其他激光束入射，以及输出部，其从所述第一激光束从所述第一输入部分和其它激光束从所述至少一个其他输入部新兴新兴被多路复用并发射为多路复用的激光束。

9. 发明公开

EP1300703A2 Semiconductor laser module and method for simultaneously reducing relative intensity noise and stimulated Brillouin scattering 审中-公开
标题翻译：一种半导体激光器模块和方法，用于相对强度噪声的同时减少，并且受激布里渊散射
公开(公告)号：EP1300703A2
公开(公告)日：2003-04-09
申请号：EP02256781.2
申请日：2002-09-27
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Tsukiji, Naoki , Yoshida, Junji , Kimura, Toshio , Kado, Souko
IPC分类号： G02B6/12 , H01L27/00
CPC分类号： H04B10/2537 , G02B6/266 , G02B6/4201 , G02B6/4208 , G02B6/4215 , G02B6/4269 , G02B6/4271 , G02B6/4286 , H01S3/094011 , H01S3/094096 , H01S3/09415 , H01S3/302 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/0683 , H01S5/1203 , H01S5/1215
摘要： A semiconductor laser module including a semiconductor laser device having an integrated diffraction grating configured to output a multiple mode laser beam in the presence of a driving current, an optical fiber configured to guide the multiple mode laser beam to an output of the laser module, and an optical attenuation device configured to attenuate the multiple mode laser beam by an amount sufficient to provide a predetermined output power from the output of the laser module. The optical attenuation device may be an optical coupling lens offset from an optimum coupling position by an amount sufficient to provide the predetermined output power, or an optical attenuator interrupting the optical fiber and configured to attenuate the multiple mode laser beam by an amount sufficient to provide the predetermined output power. Also, a two fiber Raman amplifier having a super large area (SLA) fiber that provides amplification of the signal based primarily on the forward excitation light can also be used to suppress SBS.
摘要翻译：一种半导体激光器模块（50），其包括具有集成在衍射光栅中的驱动电流的存在下的光纤（55）被配置为输出多个模式的激光束配置为引导所述多个半导体激光装置（51）（45）模式激光束，以在激光模块（50）的输出，并配置由在量足以从激光器模块的输出提供预定的输出功率，以衰减所述多个模式的激光束的光学衰减装置（1010）（50），光衰减器（1010）可以是在量足以提供预定的输出功率，或光衰减器（50B）中断光纤（55A），并配置为通过从在最佳耦合位置偏移的光耦合透镜（54）通过在用量足以提供预定的输出功率衰减多模式激光束。所以，具有超大面积（SLA）光纤（64A）做了两个光纤喇曼放大器提供因此基于正向主要激发光信号的放大可用于抑制受激布里渊散射。

10. 发明公开

EP1215782A2 An integrated laser beam synthesizing module for use in a semiconductor laser module and an optical amplifier 审中-公开
标题翻译：为激光的合成集成模块梁用于半导体激光器模块和光放大器
公开(公告)号：EP1215782A2
公开(公告)日：2002-06-19
申请号：EP01129968.2
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Yamamoto, Toshiro , Toratani, Tomoaki , Kimura, Toshio , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Shimizu, Takeo , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , G02B6/42 , G02B27/10
CPC分类号： H01S5/4068 , H01S3/094096 , H01S3/09415 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A laser beam synthesizing member 60 of a semiconductor laser module used as an optical amplifier 48 that has a prism 5 configured to correct respective optical paths of a plurality of laser beams, a beam synthesizing member 7 configured to synthesize the plurality of laser beams once passed from the prism, and a holder member 61 configured to integrally hold the prism and the beam synthesizing member, and where the beam synthesizing member has a first input part 7a on which a first laser beam is incident, at least one other input part 7b on which an other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.

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