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1. 发明授权

EP3114515B1 DIRECTIONAL SEMICONDUCTOR WAVEGUIDE COUPLER 审中-实审转让
公开(公告)号：EP3114515B1
公开(公告)日：2024-06-05
申请号：EP15759247.8
申请日：2015-03-09
IPC分类号： G02B6/125 , H01S5/02
CPC分类号： H01S5/021 , H01S5/0683 , H01S5/1032 , H01S5/141 , H01S5/1218 , G02B6/125 , G02B6/1228 , G02B2006/1214720130101 , G02B2006/1209720130101 , H01S5/0612 , H01S5/12

2. 发明公开

EP4376236A2 WAVELENGTH DETERMINATION FOR WIDELY TUNABLE LASERS AND LASER SYSTEMS THEREOF 审中-公开
公开(公告)号：EP4376236A2
公开(公告)日：2024-05-29
申请号：EP24168959.5
申请日：2019-01-31
申请人： Brolis Sensor Technology, UAB
发明人： VIZBARAS, Augustinas , SIMONYTÉ, Ieva , DE GROOTE, Andreas , VIZBARAS, Kristijonas
IPC分类号： H01S5/06
CPC分类号： H01S5/0014 , H01S5/021 , H01S5/0617 , H01S5/1032 , H01S5/1221 , H01S5/142 , H01S5/143
摘要： Methods for wavelength determination of widely tunable lasers and systems thereof may be implemented with solid-state laser based photonic systems based on photonic integrated circuit technology as well as discrete table top systems such as widely-tunable external cavity lasers and systems. The methods allow integrated wavelength control enabling immediate system wavelength calibration without the need for external wavelength monitoring instruments. Wavelength determination is achieved using a monolithic solid-state based optical cavity with a well-defined transmission or reflection function acting as a wavelength etalon. The solid-state etalon may be used with a wavelength shift tracking component, e.g., a non-balanced interferometer, to calibrate the entire laser emission tuning curve within one wavelength sweep. The method is particularly useful for integrated photonic systems based on Vernier-filter mechanism where the starting wavelength is not known a-priori, or for compact widely tunable external cavity lasers eliminating the need for calibration of wavelength via external instruments.

3. 发明公开

EP4364254A1 COMPOSANT OPTOELECTRONIQUE INSENSIBLE AUX DISLOCATIONS 审中-公开
公开(公告)号：EP4364254A1
公开(公告)日：2024-05-08
申请号：EP22744669.7
申请日：2022-06-30
申请人： Centre National de la Recherche Scientifique , Université de Montpellier
发明人： RODRIGUEZ, Jean Baptiste , BARANOV, Alexei , CERUTTI, Laurent , TOURNIE, Eric
IPC分类号： H01S5/34 , H01S5/02
CPC分类号： H01S5/3422 , H01S5/0218 , H01S5/021 , H01S2302/0020130101 , H01S5/34306 , H01S5/3416

4. 发明公开

EP3343709A1 SURFACE-MOUNT LASER APPARATUS AND OUTPUT OPTICAL POWER MONITORING METHOD 审中-公开
公开(公告)号：EP3343709A1
公开(公告)日：2018-07-04
申请号：EP17210779.9
申请日：2017-12-28
申请人： HUAWEI TECHNOLOGIES CO., LTD.
发明人： CHEN, Kaisheng , CHEN, Hongmin
IPC分类号： H01S5/02 , H01S5/022 , H01S5/0683 , H01S5/00 , H01S5/06 , H01S5/026 , H01S5/10
CPC分类号： H01S5/0264 , G02B6/12004 , G02B6/125 , G02B6/4286 , G02B6/4295 , G02B2006/12097 , G02B2006/12121 , G02B2006/12123 , H01S5/0042 , H01S5/021 , H01S5/0224 , H01S5/02248 , H01S5/02272 , H01S5/0617 , H01S5/0683 , H01S5/1032
摘要： Embodiments of the present invention disclose a surface-mount laser apparatus, so as to reduce light path complexity and costs of a device. The apparatus in the embodiments of the present invention includes an on-chip laser, a passive waveguide, and a waveguide detector. The waveguide detector includes a first ridge waveguide, the on-chip laser includes a second ridge waveguide, the on-chip laser is connected to the passive waveguide by means of coupling by using the second ridge waveguide, and the waveguide detector is connected to the passive waveguide by means of coupling by using the first ridge waveguide.

5. 发明公开

EP3170043A4 3D PHOTONIC INTEGRATION WITH LIGHT COUPLING ELEMENTS 审中-公开
公开(公告)号：EP3170043A4
公开(公告)日：2018-06-20
申请号：EP15822242
申请日：2015-07-14
申请人： BIOND PHOTONICS INC
发明人： KLAMKIN JONATHAN , RISTIC SASA
IPC分类号： G02B6/13
CPC分类号： H01S5/0224 , G02B6/12002 , G02B6/12004 , G02B6/124 , G02B6/13 , G02B6/14 , G02B6/34 , G02B6/4214 , G02B2006/12061 , G02B2006/12078 , G02B2006/12104 , G02B2006/12121 , G02B2006/12147 , H01S3/107 , H01S5/0085 , H01S5/021 , H01S5/02292 , H01S5/026 , H01S5/0287 , H01S5/1032 , H01S5/1085 , H01S5/141 , H01S5/142 , H01S5/4062
摘要： Methods for realizing integrated lasers and photonic integrated circuits on complimentary metal-oxide semiconductor (CMOS)-compatible silicon (Si) photonic chips, potentially containing integrated electronics, are disclosed. The integration techniques rely on light coupling with integrated light coupling elements such as turning mirrors, lenses, and surface grating couplers. Light is coupled from between two or more substrates using the light coupling elements. The technique can realize integrated lasers on Si where a gain flip chip (the second substrate) is bonded to a Si chip (the first substrate) and light is coupled between a waveguide in the gain flip chip to a Si waveguide by way of a turning mirror or grating coupler in the flip chip and a grating coupler in the Si chip. Integrated lenses and other elements such as spot-size converters can also be incorporated to alter the mode from the gain flip chip to enhance the coupling efficiency to the Si chip. The light coupling integration technique also allows for the integration of other components such as modulators, amplifiers, and photodetectors. These components can be waveguide-based or non-waveguide based, that is to say, surface emitting or illuminating.

6. 发明授权

EP1573871B1 METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING SELF ALIGNED SEMICONDUCTOR MESAS AND CONTACT LAYERS AND RELATED DEVICES 有权转让
标题翻译：形成具有自对准半导体材料和接触层以及相关器件的半导体器件的方法
公开(公告)号：EP1573871B1
公开(公告)日：2018-03-07
申请号：EP03814166.9
申请日：2003-12-18
申请人： Cree, Inc.
发明人： HABERERN, Kevin, W. , BERGMANN, Michael, J. , ROSADO, Raymond , EMERSON, David, T.
IPC分类号： H01L33/14 , H01S5/02 , H01S5/042 , H01S5/22 , H01S5/227 , H01S5/223 , H01S5/323
CPC分类号： H01L33/145 , H01S5/021 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2205 , H01S5/2206 , H01S5/2214 , H01S5/2231 , H01S5/2275 , H01S5/32341 , H01S2301/176
摘要： A method of forming a semiconductor device may include forming a semiconductor structure (14) on a substrate (12) wherein the semiconductor structure (14) defines a mesa (20) having a mesa surface (20A) opposite the substrate (12) and mesa sidewalls between the mesa surface and the substrate. A first passivation layer (30) can be formed on at least portions of the mesa sidewalls and on the substrate (12) adjacent the mesa sidewalls wherein at least a portion of the mesa surface (20A) is free of the first passivation layer (30) and wherein the first passivation layer (30) comprises a first material. A second passivation layer (40) can be formed on the first passivation layer (30) wherein at least a portion of the mesa surface (20A) is free of the second passivation layer (40), and wherein the second passivation layer (40) comprises a second material different than the first material. Related devices are also discussed.

7. 发明授权

EP3151265B1 PROCEDE DE REALISATION D'UNE STRUCTURE SEMICONDUCTRICE COMPORTANT UNE PORTION CONTRAINTE 有权
标题翻译：生产包含约束部分的半导体结构的方法
公开(公告)号：EP3151265B1
公开(公告)日：2018-02-28
申请号：EP16190978.3
申请日：2016-09-28
申请人： Commissariat à l'énergie atomique et aux énergies alternatives
发明人： GASSENQ, Alban , REBOUD, Vincent , GUILLOY, Kévin , CALVO, Vincent , TCHELNOKOV, Alexei
IPC分类号： H01L21/02 , H01S5/32 , H01S5/125 , H01L33/34 , H01S5/02
CPC分类号： H01S5/3201 , H01L21/02002 , H01L21/0245 , H01L21/02532 , H01L21/823412 , H01L29/1054 , H01L29/7842 , H01L33/0008 , H01L33/0012 , H01L33/0054 , H01L33/0095 , H01L33/105 , H01L33/20 , H01L33/26 , H01L2924/01032 , H01L2924/3511 , H01S5/021 , H01S5/0216 , H01S5/0217 , H01S5/12 , H01S5/125 , H01S5/3031 , H01S5/3223

8. 发明公开

EP3267537A1 TUNABLE LASER WITH INTEGRATED WAVELENGTH REFERENCE 有权转让
标题翻译：具有集成波长参考的可调谐激光器
公开(公告)号：EP3267537A1
公开(公告)日：2018-01-10
申请号：EP17180806.6
申请日：2012-10-01
申请人： Aurrion, Inc.
发明人： FANG, Alexander W. , FISH, Gregory A. , HUTCHINSON, John
IPC分类号： H01S5/06 , H01S5/026
CPC分类号： H01S5/068 , H01S3/0014 , H01S3/0637 , H01S3/0675 , H01S3/10015 , H01S3/10023 , H01S3/1003 , H01S3/1055 , H01S3/1305 , H01S5/021 , H01S5/02453 , H01S5/026 , H01S5/0265 , H01S5/0612 , H01S5/1028 , H01S5/1209 , H01S5/142
摘要： In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions (120) and silicon optical components, such as silicon wavelength filters (110) and silicon wavelength references (150), thereby reducing the size and manufacturing complexity of tunable lasing devices. For example, embodiments of the invention may utilize hybridized III-V/silicon gain regions with ring filters on silicon form a tunable laser with efficient gain from the III-V region, while providing wide tunability, efficient tunability, and narrow linewidth due to the nature of the silicon rings.
摘要翻译：在现有技术中，利用硅基可调谐环滤波器和基于III-V半导体的增益区的可调激光器需要独立形成的硅和基于III-V半导体的光学元件的异构集成，导致需要复杂制造工艺的大型光学器件（例如，气密封装以耦合形成在不同衬底上的器件，元件的精确对准等）。通过使用诸如硅波长滤波器（110）和硅波长基准（150）的混合III-V /硅增益区域（120）和硅光学部件，本发明的实施例消除了对块状光学元件和气密封装的需要。从而减小可调谐激光器件的尺寸和制造复杂性。例如，本发明的实施例可利用具有硅上的环形滤波器的杂化III-V /硅增益区域形成具有来自III-V区域的有效增益的可调谐激光器，同时提供宽的可调谐性，有效的可调谐性和由于硅环的性质。

9. 发明公开

EP3114511A4 METHODS AND SYSTEM FOR WAVELENGTH TUNABLE OPTICAL COMPONENTS AND SUB-SYSTEMS 审中-公开
公开(公告)号：EP3114511A4
公开(公告)日：2017-10-11
申请号：EP15758740
申请日：2015-03-09
申请人： AEPONYX INC
发明人： MENARD FRANCOIS , MÉNARD MICHAËL , NABKI FRÉDERIC , BÉRARD MARTIN
IPC分类号： G02B6/124 , G02B6/125 , G02B6/35 , G02B26/08
CPC分类号： G02B6/3518 , G02B6/12002 , G02B6/12007 , G02B6/124 , G02B6/357 , G02B6/3596 , G02B26/0841 , G02B2006/12147 , H01S5/021 , H01S5/02216 , H01S5/02248 , H01S5/12 , H01S5/141
摘要： Wavelength division multiplexing (WDM) has enabled telecommunication service providers to fully exploit the transmission capacity of optical fibers. State of the art systems in long-haul networks now have aggregated capacities of terabits per second. Moreover, by providing multiple independent multi-gigabit channels, WDM technologies offer service providers with a straight forward way to build networks and expand networks to support multiple clients with different requirements. In order to reduce costs, enhance network flexibility, reduce spares, and provide re-configurability many service providers have migrated away from fixed wavelength transmitters, receivers, and transceivers, to wavelength tunable transmitters, receivers, and transceivers as well as wavelength dependent add-drop multiplexer, space switches etc. However, to meet the competing demands for improved performance, increased integration, reduced footprint, reduced power consumption, increased flexibility, re-configurability, and lower cost it is desirable to exploit/adopt are monolithic optical circuit technologies, hybrid optoelectronic integration, and microelectromechanical systems (MEMS).

10. 发明授权

EP3015888B1 SUBSTRAT PRÉ-STRUCTURÉ POUR LA RÉALISATION DE COMPOSANTS PHOTONIQUES, CIRCUIT PHOTONIQUE ET PROCÉDÉ DE FABRICATION ASSOCIÉS 有权
标题翻译： SUBSTRATPRÉ-STRUCTURÉPOUR LARÉALISATIONDE COMPOSANTS PHOTONIQUES，CIRCUIT PHOTONIQUE ETPROCÉDÉDE FABRICATIONASSOCIÉS
公开(公告)号：EP3015888B1
公开(公告)日：2017-09-27
申请号：EP15190997.5
申请日：2015-10-22
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： HASSAN, Karim , SCIANCALEPORE, Corrado , DUPREZ, Hélène , BEN-BAKIR, Badhise
IPC分类号： G02B6/30 , G02B6/12 , G02B6/124
CPC分类号： G02B6/122 , G02B6/12004 , G02B6/124 , G02B6/30 , G02B2006/12061 , G02B2006/12104 , G02B2006/12121 , G02B2006/12135 , H01S5/021 , H01S5/02248 , H01S5/3031

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