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1. 发明授权

EP4203207B1 DISTRIBUTED FEEDBACK LASERS AND METHODS FOR FABRICATING SUCH LASERS 有权
公开(公告)号：EP4203207B1
公开(公告)日：2024-06-05
申请号：EP21306920.6
申请日：2021-12-23
IPC分类号： H01S5/028 , H01S5/062 , H01S5/12 , H01S5/125 , H01S5/22
CPC分类号： H01S5/1203 , H01S5/12 , H01S5/1228 , H01S5/125 , H01S5/1231 , H01S5/22 , H01S5/0287 , H01S5/06213 , H01S5/124

3. 发明公开

EP2686874A2 OXIDE REMOVAL FROM SEMICONDUCTOR SURFACES 审中-公开
标题翻译： OXIDENTFERNUNG VONHALBLEITEROBERFLÄCHEN
公开(公告)号：EP2686874A2
公开(公告)日：2014-01-22
申请号：EP12715715.4
申请日：2012-03-14
申请人： The University Of Leeds
发明人： LI, Lianhe , DAVIES, Alexander , LINFIELD, Edmund
IPC分类号： H01L21/02 , H01L21/20 , H01L21/306
CPC分类号： H01L21/02661 , B82Y20/00 , H01L21/02 , H01L21/02395 , H01L21/0243 , H01L21/02463 , H01L21/02546 , H01L21/0259 , H01L21/0262 , H01L21/02631 , H01L21/20 , H01L21/306 , H01S5/1231 , H01S5/3412 , H01S2304/02
摘要： A method of removing at least one oxide from a surface of a body of semiconductor material is disclosed, the method comprising: arranging the body in a vacuum chamber; and maintaining a temperature of the body in the vacuum chamber within a predetermined range, or substantially at a predetermined value, while exposing said surface to a flux of indium atoms. Corresponding methods of processing an oxidised surface of a body of semiconductor material to prepare the surface for epitaxial growth of at least one epitaxial layer or film over said surface, and methods of manufacturing a semiconductor device are also disclosed.
摘要翻译：公开了一种从半导体材料的表面去除至少一种氧化物的方法。该方法包括将真空室布置在真空室中，并将真空室内的温度保持在预定范围内，或基本上保持在预定值，同时将所述表面暴露于铟原子流中。还公开了处理半导体材料体的氧化表面以制备用于在所述表面上至少一个外延层或膜外延生长的表面的相应方法，以及制造半导体器件的方法。

4. 发明授权

EP1299900B1 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES 有权
标题翻译：方法提高了品质外延（表面结构与缺陷密度）在自由STANDING（铝，铟，镓）氮化物（（AI，IN，GA）N）SUBSTRATES用于光电和电子部件
公开(公告)号：EP1299900B1
公开(公告)日：2012-12-12
申请号：EP01946718.2
申请日：2001-06-27
申请人： CREE, INC.
发明人： FLYNN, Jeffrey, S. , BRANDES, George, R. , VAUDO, Robert, P. , KEOGH, David, M. , XU, Xueping , LANDINI, Barbara, E.
IPC分类号： C30B23/02 , C30B23/04 , C30B28/12 , C30B28/14 , C30B29/58 , C23C14/06 , C23C14/24 , C23C16/30
CPC分类号： C30B25/02 , C30B23/002 , C30B23/02 , C30B25/00 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/02634 , H01L21/02636 , H01L21/02658 , H01L33/32 , H01S5/1228 , H01S5/1231 , H01S5/2095 , H01S5/32341

5. 发明公开

EP2244342A3 Semiconductor laser 审中-公开
标题翻译：半导体激光
公开(公告)号：EP2244342A3
公开(公告)日：2010-12-22
申请号：EP10171188.5
申请日：2006-08-08
申请人： Eudyna Devices Inc.
发明人： Fujii, Takuya
IPC分类号： H01S5/125 , H01S5/0625 , H01S5/06 , H01S5/026 , H01S5/042 , H01S5/10 , H01S5/12
CPC分类号： H01S5/12 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/1057 , H01S5/106 , H01S5/1064 , H01S5/1209 , H01S5/1212 , H01S5/1221 , H01S5/1231 , H01S5/124 , H01S5/1246 , H01S5/125
摘要： A semiconductor laser comprises a first reflector (3) that has a plurality of segments, each segment having a first area including a diffractive grating (2) and a second area that is a space area, optical lengths of at least two of the second areas of the first reflector (3) being different from each other, and a refractive-index of each of the segments of the first reflector being changeable, and a second reflector (5,7) that has a plurality of segments, each segment having a first area including a diffractive grating (2) and a second area that is a space area, optical lengths of at least two of the second areas of the second reflector (5,7) being different from each other, and a refractive-index of each of the segments of the second reflector being changeable. The respective diffractive gratings (2) of the first areas of the first reflector and the second reflector are equal in pitch to one another.
摘要翻译：一种半导体激光器包括具有多个段的第一反射器（3），每个段具有包括衍射光栅（2）的第一区域和作为间隔区域的第二区域，第二区域中的至少两个的光学长度（3）的折射率是彼此不同的，并且所述第一反射器的每个段的折射率是可变的;以及第二反射器（5,7），其具有多个段，每个段具有第一区域包括衍射光栅（2）和作为空间区域的第二区域，第二反射器（5,7）的至少两个第二区域的光学长度彼此不同，折射率为第二反射器的每个分段是可改变的。第一反射器和第二反射器的第一区域的各个衍射光栅（2）的间距彼此相等。

6. 发明公开

EP2244342A2 Semiconductor laser 审中-公开
标题翻译： Halbleiterlaser
公开(公告)号：EP2244342A2
公开(公告)日：2010-10-27
申请号：EP10171188.5
申请日：2006-08-08
申请人： Eudyna Devices Inc.
发明人： Fujii, Takuya
IPC分类号： H01S5/125 , H01S5/0625 , H01S5/06 , H01S5/026 , H01S5/042 , H01S5/10 , H01S5/12
CPC分类号： H01S5/12 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/1057 , H01S5/106 , H01S5/1064 , H01S5/1209 , H01S5/1212 , H01S5/1221 , H01S5/1231 , H01S5/124 , H01S5/1246 , H01S5/125
摘要： A semiconductor laser comprises a first reflector that has a plurality of segments, each segment having a first area including a diffractive grating and a second area that is a space area, optical lengths of at leas t two of the second areas of the first reflector being different from each other, and a refractive-index of each of the segments of the first reflector being changeable, and a second reflector that has a plurality of segments, each segment having a first area including a diffractive grating and a second area that is a space area, optical lengths of at least two of the second areas of the second reflector being different from each other, and a refractive-index of each of the segments of the second reflector being changeable. The respective diffractive gratings of the first areas of the first reflector and the second reflector are equal in pitch to one another.
摘要翻译：半导体激光器包括具有多个段的第一反射器（3），每个段具有包括衍射光栅（2）的第一区域和作为空间区域的第二区域，至少两个第二区域的光学长度所述第一反射器（3）彼此不同，并且所述第一反射器的每个所述段的折射率是可改变的;以及第二反射器（5,7），其具有多个段，每个段具有第一区域包括衍射光栅（2）和作为空间区域的第二区域，第二反射器（5,7）的至少两个第二区域的光学长度彼此不同，折射率第二反射器的每个段都是可变的。第一反射器和第二反射器的第一区域的各衍射光栅（2）的间距相等。

7. 发明公开

EP1946158A1 METHOD FOR PRODUCING A MODULATED GRATING FOR AN OPTIMAL REFLECTION SPECTRUM 有权
标题翻译：方法产生调制GRID一个最佳的反射光谱
公开(公告)号：EP1946158A1
公开(公告)日：2008-07-23
申请号：EP06784209.6
申请日：2006-08-16
申请人： Syntune AB
发明人： WESSTRÖM, Jan-Olof
IPC分类号： G02B5/18
CPC分类号： G02B5/1861 , H01S5/1231
摘要： Method for producing a modulated grating for an optimal reflection spectrum, which grating is a multiple wavelength reflector. The invention is characterised in that the method comprises the following steps: a) Determining wavelengths to be reflected b) Calculating a preliminary grating c) Comparing the reflection spectrum r°(f) with the characteristics of the wanted modulated grating d) Differences lead to a directional change of r°(f) e) Calculating a target function G(z) f) Changing the grating (zk) depending on the real and imaginary part of G(z) g) Repeating steps c) to f) until the grating reflects the predetermined wavelengths

8. 发明授权

EP1162708B1 Distributed feedback semiconductor laser device 有权
标题翻译：分布式反馈半导体激光器
公开(公告)号：EP1162708B1
公开(公告)日：2008-07-23
申请号：EP01113765.0
申请日：2001-06-05
申请人： FURUKAWA ELECTRIC CO., LTD.
发明人： Mukaihara, Toshikazu, The Furukawa Electr. Co.Ltd. , Shimizu, Hitoshi, The Furukawa Electr. Co. Ltd. , Funabashi, Masaki, The Furukawa Electr. Co. Ltd. , Kasukawa, Akihiko, The Furukawa Electr. Co. Ltd.
IPC分类号： H01S5/12 , H01S5/323
CPC分类号： H01S5/3235 , H01S5/12 , H01S5/1228 , H01S5/1231 , H01S5/32366 , H01S5/32391

9. 发明公开

EP1265326A4 GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER DEVICE AND PRODUCTION METHOD THEREFOR 有权
标题翻译：具有产生增益和功率和过程DFB半导体激光元件
公开(公告)号：EP1265326A4
公开(公告)日：2005-12-07
申请号：EP01902789
申请日：2001-02-07
申请人： SHARP KK
发明人： TAKAHASHI KOJI
IPC分类号： H01S5/12 , H01S5/22 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/1231 , H01S5/3202 , H01S5/32366 , H01S5/34306 , H01S5/34313 , H01S5/3432 , H01S5/3434 , H01S5/34346 , H01S5/3438
摘要： The presence/absence and the intensity of a refractive index distribution are controlled easily and reproducibly without depending on a machining precision. InGaAs well layers (14a), (14b) small in forbidden band width and high in refractive index are surrounded by a lower barrier layer (13), an intermediate barrier layer (15), an upper barrier layer (16) and a buried layer (18) that have large forbidden band widths and are made from a GaAsN material. The presence/absence and the intensity of a refractive index distribution are controlled by adjusting the nitrogen mixed crystal ratio of a GaAsN material constituting the barrier layers (13), (15), (16) and the buried layer (18). Accordingly, the distribution of a refractive index is controlled easily and reproducibly without allowing for the shape of a diffraction grating (17) and a balance in refractive index with respect to the buried layer (18), that is, without depending on a machining precision.

10. 发明公开

EP1376789A3 Distributed Feedback Semiconductor Laser for Outputting Beam of Single Wavelength 有权
标题翻译： DFB - 半导体激光器，用于产生单一波长的光束
公开(公告)号：EP1376789A3
公开(公告)日：2004-06-02
申请号：EP03013736.8
申请日：2003-06-17
申请人： ANRITSU CORPORATION
发明人： Mori, Hiroshi , Kikugawa, Tomoyuki , Takahashi, Yoshio , Fujita, Motoaki
IPC分类号： H01S5/12
CPC分类号： H01S5/12 , H01S5/0654 , H01S5/1203 , H01S5/1225 , H01S5/1231 , H01S5/124 , H01S5/1243
摘要： A distributed feedback semiconductor laser includes a semiconductor substrate (11), first and second diffraction grating layers (12a, 12b), a connecting layer (13), an active layer (18) and a cladding layer (19). The first and second diffraction grating layers (12a, 12b) are provided above the semiconductor substrate (11), and spaced from each other in an output direction of a beam (23). The connecting layer (13) is flat and sandwiched between the first and second diffraction grating layers (12a, 12b). The active layer (18) is disposed above or below the first and second diffraction grating layers (12a, 12b) and the connecting layer (13). The cladding layer (19) is disposed above the active layer (18) or above the first and second diffraction grating layers (12a, 12b) and the connecting layer (f). A diffraction grating (16) including the first and second diffraction grating layers (12a, 12b) has a plurality of slits (15) penetrating from an upper surface to a lower surface and perpendicular to the output direction of the beam (23). The connecting layer (13) is formed from two layers (13a, 13b) grown epitaxially in a direction perpendicular to the output direction of the beam (23). One (13a) of the two layers is formed of the same material as the first and second diffraction grating layers.
摘要翻译：分布式反馈半导体激光器包括：半导体衬底（11），第一和第二衍射光栅层（12A，12B），有源层（18）和包层（19）的连接层（13）。第一和第二衍射光栅层（12A，12B）在半导体衬底（11）的上方设置，并在梁（23）的输出方向从在彼此间隔开。连接层（13）是平的并且夹在所述第一和第二衍射光栅层之间（12A，12B）。有源层（18）之上或在第一和第二衍射光栅层（12A，12B）和连接层（13）下面设置。该包覆层（19）在有源层（18），第一和第二衍射光栅层（12A，12B）和连接层之上或上方设置（F）。衍射光栅（16）包括第一和第二衍射光栅层（12A，12B）具有狭缝的多个（15）在从上表面到下表面且垂直于所述光束（23）的输出方向上贯通。连接层（13）由两个层（13A，13B）外延生长的方向垂直于所述光束（23）的输出方向形成。所述两个层中的一个（13A）形成在相同的材料作为第一和第二衍射光栅层。

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