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1. 发明授权

EP2026428B1 Method of fabricating semiconductor laser 有权
标题翻译：一种用于制造半导体激光器的过程
公开(公告)号：EP2026428B1
公开(公告)日：2015-01-14
申请号：EP08011427.5
申请日：2008-06-24
申请人： Sumitomo Electric Industries, Ltd.
发明人： Yoshimoto, Susumu , Matsubara, Hideki
IPC分类号： H01S5/343 , H01S5/10 , H01S5/12 , H01S5/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/1017 , H01S5/105 , H01S5/1231 , H01S5/2009

2. 发明授权

EP1283571B1 Laser mit schwach gekoppeltem Gitterbereich 有权
标题翻译：激光弱耦合光栅区
公开(公告)号：EP1283571B1
公开(公告)日：2015-01-14
申请号：EP01118970.1
申请日：2001-08-06
申请人： nanoplus GmbH Nanosystems and Technologies
发明人： Reithmaier,Johann Peter , Bach,Lars
IPC分类号： H01S5/12 , H01S5/125 , H01S5/22
CPC分类号： H01S5/12 , H01S5/06256 , H01S5/1203 , H01S5/1228 , H01S5/1231 , H01S5/1237 , H01S5/125 , H01S5/22

3. 发明授权

EP1850430B1 Method of manufacturing a semiconductor laser device 有权转让
标题翻译：一种用于制造半导体激光元件的方法
公开(公告)号：EP1850430B1
公开(公告)日：2013-05-01
申请号：EP07003455.8
申请日：2007-02-19
申请人： Oclaro Japan, Inc.
发明人： Okamoto, Kaoru , Washino, Ryu , Komatsu, Kazuhiro , Sakuma, Yasushi
IPC分类号： H01S5/12
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/1231 , H01S5/125 , H01S5/34306 , H01S5/34313

4. 发明公开

EP2290136A1 Method for achieving improved epitaxy quality (surface texture and defect densitity) on free-standing (aluminum, indium, gallium) nitride ((Al, In, Ga)N) substrates for opto-electronic and electronic devices 有权
标题翻译：一种用于光电子和电子设备上的独立式的实现改善的外延质量（表面结构和缺陷密度）（铝，铟，镓）氮化物（（人，In，Ga）N系）衬底的方法
公开(公告)号：EP2290136A1
公开(公告)日：2011-03-02
申请号：EP10011037.8
申请日：2001-06-27
申请人： Cree, Inc.
发明人： Flynn, Jeffrey, S. , Brandes, George, R. , Vaudo, Robert, P. , Keogh, David, M. , Xu, Xueping , Landini, Barbara, E.
IPC分类号： C30B23/02 , C30B23/04 , C30B28/12 , C30B28/14 , C30B29/58 , C23C14/06 , C23C14/24 , C23C16/30
CPC分类号： C30B25/02 , C30B23/002 , C30B23/02 , C30B25/00 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/02634 , H01L21/02636 , H01L21/02658 , H01L33/32 , H01S5/1228 , H01S5/1231 , H01S5/2095 , H01S5/32341
摘要： A method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, comprising depositing the III-V nitride homoepitaxial layer by a vapor phase epitaxy process using Group III source material and nitrogen source material, said method further comprising one of the following: (i) coating a susceptor surface with a corresponding III-V nitride material prior to reposing the substrate thereon for said depositing step; (ii) annealing the substrate in an ambient prior to said depositing step at a temperature > 600 degrees Celsius to relieve strain in the layer, with the ambient of the anneal being different from ambient of said depositing step to protect the substrate surface and promote substrate strain relaxation; (iii) subjecting the substrate to a mass transport smoothing of a growth surface of said substrate; and (iv) conditioning the substrate by oxidation in O 2 , air, an air/inert gas mixture, or a wet mixture to create a thin oxide layer, and stripping the oxide layer in an alkali solution or etch removing same, to remove potential impurities from the substrate.
摘要翻译：形成在相应的III-V族氮化物材料基板由III-V族氮化物同质外延层，包括通过使用III族源材料和氮的源材料的气相外延工艺沉积在III-V族氮化物同质外延层的方法，所述方法还包括以下的一个：（i）在其上寄托衬底用于沉积所述步骤之前，涂覆与相应的III-V族氮化物材料的基座表面; （ii）在室温之前在所述退火在基板在摄氏的温度> 600度淀积步骤在层以缓解应变，与退火从所述周围沉积步骤，以保护基片表面，并促进基底是不同的环境应变松弛; （III）使所述基材与所述基材的生长表面的质量传递平滑; 和（iv）调节除去同一衬底通过氧化在O 2，空气，空气/惰性气体混合物，或湿混合物以产生一个薄的氧化物层，并在碱溶液中汽提所述氧化物层或蚀刻，以去除潜在从基片的杂质。

5. 发明公开

EP2026428A3 Method of fabricating semiconductor laser 有权
标题翻译：一种用于制造半导体激光器的过程
公开(公告)号：EP2026428A3
公开(公告)日：2010-08-18
申请号：EP08011427.5
申请日：2008-06-24
申请人： Sumitomo Electric Industries, Ltd.
发明人： Yoshimoto, Susumu , Matsubara, Hideki
IPC分类号： H01S5/343 , H01S5/10 , H01S5/12 , H01S5/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/1017 , H01S5/105 , H01S5/1231 , H01S5/2009
摘要： There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an In X1 Ga 1-X1 N (0 X1 Ga 1-X1 N layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the In X1 Ga 1-X1 N layer to form a patterned Inx1Ga 1-X1 N layer; and growing an Al X2 Ga 1-X2 N (0 ≤ X2 ≤ 1) layer on a top surface of the patterned In X1 Ga 1-X1 N layer to form voids associated with the openings.

6. 发明授权

EP1265326B1 GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER DEVICE AND PRODUCTION METHOD THEREFOR 有权
标题翻译：具有产生增益和功率和过程DFB半导体激光元件
公开(公告)号：EP1265326B1
公开(公告)日：2009-05-13
申请号：EP01902789.5
申请日：2001-02-07
申请人： Sharp Kabushiki Kaisha
发明人： TAKAHASHI, Koji
IPC分类号： H01S5/12
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/1231 , H01S5/3202 , H01S5/32366 , H01S5/34306 , H01S5/34313 , H01S5/3432 , H01S5/3434 , H01S5/34346 , H01S5/3438
摘要： The presence/absence and the intensity of a refractive index distribution are controlled easily and reproducibly without depending on a machining precision. InGaAs well layers (14a), (14b) small in forbidden band width and high in refractive index are surrounded by a lower barrier layer (13), an intermediate barrier layer (15), an upper barrier layer (16) and a buried layer (18) that have large forbidden band widths and are made from a GaAsN material. The presence/absence and the intensity of a refractive index distribution are controlled by adjusting the nitrogen mixed crystal ratio of a GaAsN material constituting the barrier layers (13), (15), (16) and the buried layer (18). Accordingly, the distribution of a refractive index is controlled easily and reproducibly without allowing for the shape of a diffraction grating (17) and a balance in refractive index with respect to the buried layer (18), that is, without depending on a machining precision.

7. 发明公开

EP1990877A1 Lasers semi-conducteur monomodes à contre-réaction répartie 有权
标题翻译： Monomode-Halbleiterlaser mit verteilterRückkopplung
公开(公告)号：EP1990877A1
公开(公告)日：2008-11-12
申请号：EP08155834.8
申请日：2008-05-07
申请人： THALES
发明人： Carras, Mathieu , De Rossi, Alfredo
IPC分类号： H01S5/12
CPC分类号： H01S5/12 , H01S5/0654 , H01S5/1218 , H01S5/1231
摘要： La présente invention concerne le domaine des lasers semiconducteurs à contre-réaction répartie. Plus précisément, l'invention permet de mettre au point des lasers à contre-réaction répartie monomodes avec un taux d'obtention proche de 100% selon une technologie simple et robuste.
A cet effet, l'invention consiste à introduire des pertes radiatives sur un seul des deux modes prépondérants d'un laser DFB obtenu par modulation d'indice en définissant un profil d'indice effectif de la zone active particulier.
摘要翻译：激光器具有确保机械支撑功能的上下导向器（2,3），砷化镓衬底以及由半导体材料制成的薄层叠层形成的有源区（1）。该区域具有以折射率沿轴线周期性变化并且具有周期（λ）的方式调制的折射率分布。该轮廓的周期被定义为使得整数k大于或等于1，对于该整数k，具有特定关系的参数是其虚部低于实部的十分之一的复数。半导体材料选自砷化镓，砷化铟铝，砷化镓铝，磷化铟，砷化铟，锑化锑和砷化铟镓。下导轨由磷化铟制成。上导板由磷化铟，砷化铟镓和砷化镓铝制成。

8. 发明公开

EP1742314A3 Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD 审中-公开
标题翻译：具有集成波导掩埋式异质结构装置光栅与einstüfigenMOCVD制造
公开(公告)号：EP1742314A3
公开(公告)日：2008-11-12
申请号：EP06012066.4
申请日：2006-06-12
申请人： Avago Technologies Fiber IP (Singapore) Pte. Ltd.
发明人： Bour, David, P. , Corzine, Scott, W.
IPC分类号： H01S5/227 , H01S5/12
CPC分类号： H01S5/12 , B82Y20/00 , G02B6/131 , H01S5/1231 , H01S5/1237 , H01S5/2004 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/227 , H01S5/3211 , H01S5/34313 , H01S5/34366 , H01S2301/173 , H01S2304/04
摘要： The device (100) is an optoelectronic device or transparent waveguide device that comprises a growth surface (222), a growth mask (230), an optical waveguide core mesa (240) and a cladding layer (160). The growth mask (230) is located on the semiconductor surface (222) and defines an elongate growth window (234) having a periodic grating profile (235, 236). The optical waveguide core mesa (240) is located in the growth window (240) and has a trapezoidal cross-sectional shape. The cladding layer (160) covers the optical waveguide core mesa (240) and extends over at least part of the growth mask (230). Such devices are fabricated by providing a wafer (210) comprising a growth surface (222), growing an optical waveguide core mesa (240) on the growth surface (222) by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa (240) with cladding material (160) at a second growth temperature, lower than the first growth temperature.

9. 发明公开

EP1901357A2 Optoelektronischer Halbleiterchip 审中-公开
公开(公告)号：EP1901357A2
公开(公告)日：2008-03-19
申请号：EP07016950.3
申请日：2007-08-29
申请人： Osram Opto Semiconductors GmbH & Co. OHG
发明人： Albrecht, Tony , Brüderl, Georg , Härle, Volker , Höppel, Lutz , Straßburg, Martin
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L21/02389 , H01L21/0254 , H01L21/02658 , H01L31/02363 , H01L33/007 , H01L2924/0002 , H01S5/1231 , Y02E10/50 , H01L2924/00
摘要： Es wird ein optoelektronischer Halbleiterchip mit
- einem Aufwachssubstrat (1) mit einer strukturierten Aufwachsfläche (2), die eine Vielzahl von Erhebungen (4) und Senken (3) aufweist, und
- einer aktiven Schichtenfolge (5), die auf die Aufwachsfläche (2) aufgebracht ist, angegeben.
摘要翻译：光电子半导体芯片具有具有结构化生长表面的生长衬底（1），其具有多个突出部（4）和中空部（3）。活性系列沉积物（5）施加在生长表面上。活性系列沉积物的表面积大于生长衬底的横截面积（Q）的面积。生长衬底由氮化镓，碳化硅，蓝宝石，氮化铟镓，铟铝氮化镓铟锌氧化物组成。

10. 发明公开

EP1753104A3 Semiconductor laser 有权转让
标题翻译：半导体激光
公开(公告)号：EP1753104A3
公开(公告)日：2007-06-13
申请号：EP06254145.3
申请日：2006-08-08
申请人： Eudyna Devices Inc.
发明人： Fujii, Takuya c/o Eudyna Devices Inc.
IPC分类号： H01S5/125 , H01S5/0625 , H01S5/06 , H01S5/026 , H01S5/042 , H01S5/10 , H01S5/12
CPC分类号： H01S5/12 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/1057 , H01S5/106 , H01S5/1064 , H01S5/1209 , H01S5/1212 , H01S5/1221 , H01S5/1231 , H01S5/124 , H01S5/1246 , H01S5/125
摘要： A semiconductor laser has a first diffractive grating area. The first diffractive grating area has a plurality of segments. Each segment has a first area including a diffractive grating (2) and a second area that is space area combined to the first area. Optical lengths of at least two of the second areas are different from each other. A refractive-index of each of the segments are changeable.
摘要翻译：半导体激光器具有第一衍射光栅区域。第一衍射光栅区域具有多个段。每个段具有包括衍射光栅（2）的第一区域和与第一区域组合的空间区域的第二区域。至少两个第二区域的光学长度彼此不同。每个片段的折射率是可变的。

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