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1. 发明公开

EP1202407A3 Semiconductor laser device for use as a pumping light source 有权
标题翻译： Halbleiterlaservorrichtung zur Verwendung als Pumplichtquelle
公开(公告)号：EP1202407A3
公开(公告)日：2003-12-03
申请号：EP01114717.0
申请日：2001-06-21
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki
IPC分类号： H01S5/12 , H01S3/30
CPC分类号： H01S5/227 , H01S3/094003 , H01S3/302 , H01S5/02415 , H01S5/02438 , H01S5/0287 , H01S5/1212 , H01S5/1215 , H01S5/1225
摘要： A semiconductor laser device, module, and method for providing light suitable for providing an excitation light source for a Raman amplifier. The semiconductor laser device includes an active layer configured to radiate light, a spacer layer in contact with the active layer and a diffraction grating formed within the spacer layer, and configured to emit a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. A plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum is provided by changing a wavelength interval between the longitudinal modes and/or widening the predetermined spectral width of the oscillation wavelength spectrum. The wavelength interval is set by the length of a resonator cavity within the semiconductor laser device, while the predetermined spectral width of the oscillation wavelength spectrum is set by either shortening the diffraction grating or varying a pitch of the grating elements within the diffraction grating.
摘要翻译：一种用于提供适于为拉曼放大器提供激发光源的光的半导体激光器件，模块和方法。半导体激光器件包括被配置为辐射光的有源层，与有源层接触的间隔层和形成在间隔层内的衍射光栅，并且被配置为发射具有预定光谱宽度内的多个纵向模式的光束的半导体器件的振荡波长谱。通过改变纵向模式之间的波长间隔和/或加宽振荡波长频谱的预定频谱宽度来提供在振荡波长频谱的预定频谱宽度内的多个纵向模式。波长间隔由半导体激光器件内的谐振器腔的长度设定，而通过缩短衍射光栅或改变衍射光栅内的光栅元件的间距来设定振荡波长光谱的预定光谱宽度。

2. 发明公开

EP1255336A2 Semiconductor laser device having a diffraction grating on a light emission side 审中-公开
$Semiconductor laser device having a diffraction grating on a light emission side$
标题翻译：在发光侧具有衍射光栅的半导体激光装置
公开(公告)号：EP1255336A2
公开(公告)日：2002-11-06
申请号：EP01129378.4
申请日：2001-12-18
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Yoshida, Junji , Tsukiji, Naoki , Funabashi, Masaki
IPC分类号： H01S5/125 , H01S5/10 , H01S5/14 , H04B10/14
CPC分类号： H01S5/125 , H01S3/094003 , H01S3/09415 , H01S5/1021 , H01S5/1039 , H01S5/1212 , H01S5/1215 , H01S5/141 , H01S5/146
摘要： A semiconductor device and method for providing a light source suitable for use as a pumping light source in a Raman amplification system are provided. The device upon which the method is based includes an active layer configured to radiate light; a light reflecting facet positioned on a first side of the active layer; a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet; and a partial diffraction grating having a predetermined length and positioned on a light emission side of the resonator. The predetermined length of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavity, or in relation to a coupling coefficient κi of the partial diffraction grating.
摘要翻译：提供了一种用于提供适合用作拉曼放大系统中的泵浦光源的光源的半导体器件和方法。该方法所基于的装置包括被配置为发射光的有源层; 位于有源层的第一侧上的光反射小面; 位于所述有源层的第二侧上的发光小平面，从而在所述光反射小面和所述发光小平面之间形成谐振腔; 以及具有预定长度并位于谐振器的光发射侧的部分衍射光栅。部分衍射光栅的预定长度被选择为使得半导体器件发射具有在半导体器件的振荡波长谱的预定谱宽内的多个纵向模式的光束。部分衍射光栅的预定长度可以相对于谐振腔的长度或与部分衍射光栅的耦合系数κi相关地设定。

3. 发明授权

EP1215783B1 Semiconductor laser module, manufacturing method thereof and optical amplifier 有权
标题翻译：一种半导体激光器模块，光放大器和制造工艺
公开(公告)号：EP1215783B1
公开(公告)日：2010-10-13
申请号：EP01129992.2
申请日：2001-12-17
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Kimura, Toshio , Nakae, Masashi , Shimizu, Takeo , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B27/10 , G02B6/42
CPC分类号： H01S5/02248 , G02B6/4206 , G02B6/4218 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4068 , H01S5/4087

4. 发明授权

EP1202407B1 Semiconductor laser device for use as a pumping light source 有权
标题翻译：用作泵浦光源的半导体激光装置
公开(公告)号：EP1202407B1
公开(公告)日：2006-07-26
申请号：EP01114717.0
申请日：2001-06-21
申请人： The Furukawa Electric Co., Ltd.
发明人： Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki
IPC分类号： H01S5/12 , H01S3/30
CPC分类号： H01S5/227 , H01S3/094003 , H01S3/302 , H01S5/02415 , H01S5/02438 , H01S5/0287 , H01S5/1212 , H01S5/1215 , H01S5/1225

5. 发明公开

EP1215784A2 Semiconductor laser device for use in a semiconductor laser module and optical amplifier 审中-公开
标题翻译：用于半导体激光器模块和光放大器的半导体激光装置
公开(公告)号：EP1215784A2
公开(公告)日：2002-06-19
申请号：EP01129993.0
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Kimura, Toshio , Aikiyo, Takeshi , Shimizu, Takeo , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B6/42 , G02B27/10
CPC分类号： G02B6/4218 , B82Y20/00 , G02B6/4206 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S3/302 , H01S5/005 , H01S5/02208 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1039 , H01S5/1085 , H01S5/1092 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/125 , H01S5/146 , H01S5/22 , H01S5/227 , H01S5/3215 , H01S5/3409 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A single semiconductor laser device (2) used in a semiconductor laser module of an optical amplifier (48) and having a first light emitting stripe (9) with a diffraction grating (75) and at least one other light emitting stripe (10) with a diffraction grating (75) and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.

6. 发明公开

EP1215784A3 Semiconductor laser device for use in a semiconductor laser module and optical amplifier 审中-公开
标题翻译： Halbleiterlaservorrichtungfürein Halbleiterlasermodul und OptischenVerstärker
公开(公告)号：EP1215784A3
公开(公告)日：2004-01-07
申请号：EP01129993.0
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Kimura, Toshio , Aikiyo, Takeshi , Shimizu, Takeo , Yamamoto, Toshiro , Toratani, Tomoaki , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , H01S5/022 , G02B6/42 , G02B27/10
CPC分类号： G02B6/4218 , B82Y20/00 , G02B6/4206 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S3/302 , H01S5/005 , H01S5/02208 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1039 , H01S5/1085 , H01S5/1092 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/125 , H01S5/146 , H01S5/22 , H01S5/227 , H01S5/3215 , H01S5/3409 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A single semiconductor laser device (2) used in a semiconductor laser module of an optical amplifier (48) and having a first light emitting stripe (9) with a diffraction grating (75) and at least one other light emitting stripe (10) with a diffraction grating (75) and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.
摘要翻译：一种用于光放大器（48）的半导体激光器模块并且具有带有衍射光栅（75）的第一发光条纹（9）和至少一个其它发光条纹（10）的单个半导体激光器件（2）衍射光栅（75），并且它们对准以分别发射第一激光束和至少一个其它激光束通过一个边缘表面。

7. 发明公开

EP1215782A3 An integrated laser beam synthesizing module for use in a semiconductor laser module and an optical amplifier 审中-公开
标题翻译：为激光的合成集成模块梁用于半导体激光器模块和光放大器
公开(公告)号：EP1215782A3
公开(公告)日：2004-01-07
申请号：EP01129968.2
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Yamamoto, Toshiro , Toratani, Tomoaki , Kimura, Toshio , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Shimizu, Takeo , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , G02B6/42 , G02B27/10
CPC分类号： H01S5/4068 , H01S3/094096 , H01S3/09415 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A laser beam synthesizing member 60 of a semiconductor laser module used as an optical amplifier 48 that has a prism 5 configured to correct respective optical paths of a plurality of laser beams, a beam synthesizing member 7 configured to synthesize the plurality of laser beams once passed from the prism, and a holder member 61 configured to integrally hold the prism and the beam synthesizing member, and where the beam synthesizing member has a first input part 7a on which a first laser beam is incident, at least one other input part 7b on which an other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.
摘要翻译：的激光束合成用作光放大器48的半导体激光器模块的部件60并有一个棱镜5被配置为校正激光束的多个respectivement光路，光束合成部件7被配置为合成的激光束的多元性一旦通过从棱镜，并且被配置成整体保持有棱镜和光束合成部件的保持器部件61，并且其中所述光束合成构件具有在其上的第一激光束入射时，至少一个其他的输入部7b上的第一输入部7a 这在其他激光束入射，以及输出部，其从所述第一激光束从所述第一输入部分和其它激光束从所述至少一个其他输入部新兴新兴被多路复用并发射为多路复用的激光束。

8. 发明公开

EP1215782A2 An integrated laser beam synthesizing module for use in a semiconductor laser module and an optical amplifier 审中-公开
标题翻译：为激光的合成集成模块梁用于半导体激光器模块和光放大器
公开(公告)号：EP1215782A2
公开(公告)日：2002-06-19
申请号：EP01129968.2
申请日：2001-12-17
申请人： The Furukawa Electric Co., Ltd.
发明人： Yamamoto, Toshiro , Toratani, Tomoaki , Kimura, Toshio , Tsukiji, Naoki , Yoshida, Junji , Funabashi, Masaki , Aikiyo, Takeshi , Shimizu, Takeo , Matsuura, Hiroshi , Konishi, Mieko , Nakae, Masashi
IPC分类号： H01S5/40 , H01S5/00 , G02B6/42 , G02B27/10
CPC分类号： H01S5/4068 , H01S3/094096 , H01S3/09415 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A laser beam synthesizing member 60 of a semiconductor laser module used as an optical amplifier 48 that has a prism 5 configured to correct respective optical paths of a plurality of laser beams, a beam synthesizing member 7 configured to synthesize the plurality of laser beams once passed from the prism, and a holder member 61 configured to integrally hold the prism and the beam synthesizing member, and where the beam synthesizing member has a first input part 7a on which a first laser beam is incident, at least one other input part 7b on which an other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.

9. 发明公开

EP1255336A3 Semiconductor laser device having a diffraction grating on a light emission side 审中-公开
$Semiconductor laser device having a diffraction grating on a light emission side$
标题翻译：与反射侧栅格的半导体激光装置
公开(公告)号：EP1255336A3
公开(公告)日：2004-12-08
申请号：EP01129378.4
申请日：2001-12-18
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Yoshida, Junji , Tsukiji, Naoki , Funabashi, Masaki
IPC分类号： H01S5/125 , H01S5/10 , H01S5/14 , H04B10/14
CPC分类号： H01S5/125 , H01S3/094003 , H01S3/09415 , H01S5/1021 , H01S5/1039 , H01S5/1212 , H01S5/1215 , H01S5/141 , H01S5/146
摘要： A semiconductor device and method for providing a light source suitable for use as a pumping light source in a Raman amplification system are provided. The device upon which the method is based includes an active layer configured to radiate light; a light reflecting facet positioned on a first side of the active layer; a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet; and a partial diffraction grating having a predetermined length and positioned on a light emission side of the resonator. The predetermined length of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavity, or in relation to a coupling coefficient κi of the partial diffraction grating.

10. 发明公开

EP1233489A3 Dfb semiconductor laser device 审中-公开
标题翻译： DFB半导体激光装置
公开(公告)号：EP1233489A3
公开(公告)日：2004-05-12
申请号：EP01125744.1
申请日：2001-10-28
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Funabashi, Masaki , Arakawa, Satoshi
IPC分类号： H01S5/12
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/1228 , H01S5/209 , H01S5/3403 , H01S5/3407 , H01S5/34306
摘要： A distributed feedback (DFB) semiconductor laser device has a multiple-quantum-well (MQW) structure (16) and a diffraction grating (18) formed in the MQW structure (16). The diffraction grating (18) includes a grating structure formed in QW layers and a barrier layer of the MQW structure (16) and an embedded layer (20) embedded in the grating structure. One of the QW layers and the barrier layers has an etching rate lower than the etching rate of the other layers of the MQW structure and functions as an etching stop layer during etching of the MQW structure (16) for forming the diffraction grating.

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