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1. 发明公开

EP3037382A1 Graphene double-barrier resonant tunneling device 审中-公开
标题翻译： Resonante Tunneleffektvorrichtung aus Graphen mit Doppelbarriere
公开(公告)号：EP3037382A1
公开(公告)日：2016-06-29
申请号：EP14200335.9
申请日：2014-12-24
申请人： Nokia Technologies OY
发明人： Astley, Michael Robert
IPC分类号： B82Y10/00 , H01L29/73 , H01L29/88 , H01L29/08 , H01L29/16 , H01L29/76
CPC分类号： H01L29/0895 , B82Y10/00 , C01B21/064 , C01B32/182 , C01P2006/40 , H01L29/1606 , H01L29/2003 , H01L29/7311 , H01L29/7613 , H01L29/882 , Y10S977/734 , Y10S977/831 , Y10S977/937
摘要： An apparatus comprising: a fermion source nanolayer (90); a first insulating nanolayer (92); a fermion transport nanolayer (94); a second insulating nanolayer (96); a fermion sink nanolayer (98); a first contact for applying a first voltage to the fermion source nanolayer; a second contact for applying a second voltage to the fermion sink nanolayer; and a transport contact for enabling an electric current via the fermion transport nanolayer. In a particular example, the apparatus comprises three graphene sheets (90, 94, 98) interleaved with two-dimensional Boron-Nitride (BN) layers (92, 96).
摘要翻译：一种装置，包括：费米子源纳米层（90）; 第一绝缘纳米层（92）; 费米子运输纳米层（94）; 第二绝缘纳米层（96）; 费米子槽纳米层（98）; 用于将第一电压施加到费米籽源纳米层的第一接触; 用于向所述费米子槽纳米层施加第二电压的第二接触; 以及用于通过费米子运输纳米层实现电流的运输接触件。在具体示例中，该装置包括与二维硼氮化物（BN）层（92,96）交错的三个石墨烯片（90,94,98）。

2. 发明授权

EP2302108B1 Nanostructures and methods for manufacturing the same 有权
标题翻译：纳米结构和它们的制备方法
公开(公告)号：EP2302108B1
公开(公告)日：2012-05-09
申请号：EP10194201.9
申请日：2003-07-08
申请人： QuNano AB
发明人： Samuelson, Lars , Ohlsson, Jonas
IPC分类号： C30B11/12 , C30B29/40 , C30B29/60
CPC分类号： H01L31/035227 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B25/00 , C30B25/02 , C30B25/14 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , C30B29/605 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/20 , H01L29/66318 , H01L29/7371 , H01L29/882 , H01L31/022466 , H01L31/048 , H01L31/068 , H01L33/04 , Y02E10/547 , Y10S977/762 , Y10S977/763
摘要： A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. Thus a resonant tunneling diode comprises a nanowhisker having a seed particle melt at one end, and a column of a constant diameter with a nanometer dimension, such as to exhibit quantum confinement effects, the column comprising first and second semiconductor portions comprising respectively an emitter and a collector, and, disposed between the first and second semiconductor portions, third and fourth portions of material having a different band gap from that of the first and second semiconductor portions, and a fifth central portion of a semiconductor material having a different band gap from that of the third and fourth portions, disposed between the third and fourth portions and forming a quantum weil. The RTD is made by a method including depositing a seed particle on a substrate, and exposing the seed particle to materials under controlled conditions of temperature and pressure such as to form a melt with the seed particle, so that the seed particle rises on top of a column whereby to form a nanowhisker, the column of the nanowhisker having a constant diameter of a nanometer dimension; during the growth of the column, selectively changing the compositions of said gases whereby to abruptly change the composition of the material of the column at regions along its length, whilst retaining epitaxial growth, wherein lattice mismatch between the materials of the portions is accommodated by radial outward bulging of the whisker at the boundaries.

3. 发明公开

EP1700375A1 METHOD AND APPARATUS FOR EFFECTING HIGH-FREQUENCY AMPLIFICATION OR OSCILLATION 审中-公开
标题翻译：方法和设备高频增益或-OSZILLATION的影响
公开(公告)号：EP1700375A1
公开(公告)日：2006-09-13
申请号：EP04815338.1
申请日：2004-12-20
申请人： RAYTHEON COMPANY
发明人： FRAZIER, Gary, A.
IPC分类号： H03B7/14 , H03B7/08 , H01L29/88 , H03F3/12
CPC分类号： B82Y10/00 , H01L29/882 , H03B7/08 , H03B7/146 , H03F3/607
摘要： An apparatus includes a distributed resonant tunneling section with a plurality of inductive portions that are coupled in series with each other between first and second nodes, such that a respective further node is present between each adjacent pair of the inductive portions. The distributed resonant tunneling section also has a plurality of resonant tunneling device portions which are each coupled between a third node and a respective one of the further nodes.

4. 发明公开

EP1525339A2 NANOSTRUCTURES AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译： NANOSTRUKTUREN UND VERFAHREN ZU IHRER HERSTELLUNG
公开(公告)号：EP1525339A2
公开(公告)日：2005-04-27
申请号：EP03738327.0
申请日：2003-07-08
申请人： BTG INTERNATIONAL LIMITED
发明人： SAMUELSON, Lars, Ivar , OHLSSON, Jonas, Björn
IPC分类号： C30B11/12 , C30B29/40 , C30B29/60
CPC分类号： H01L31/035227 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B25/00 , C30B25/02 , C30B25/14 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , C30B29/605 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/20 , H01L29/66318 , H01L29/7371 , H01L29/882 , H01L31/022466 , H01L31/048 , H01L31/068 , H01L33/04 , Y02E10/547 , Y10S977/762 , Y10S977/763
摘要： A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. Thus a resonant tunneling diode comprises a nanowhisker having a seed particle melt at one end, and a column of a constant diameter with a nanometer dimension, such as to exhibit quantum confinement effects, the column comprising first and second semiconductor portions comprising respectively an emitter and a collector, and, disposed between the first and second semiconductor portions, third and fourth portions of material having a different band gap from that of the first and second semiconductor portions, and a fifth central portion of a semiconductor material having a different band gap from that of the third and fourth portions, disposed between the third and fourth portions and forming a quantum weil. The RTD is made by a method including depositing a seed particle on a substrate, and exposing the seed particle to materials under controlled conditions of temperature and pressure such as to form a melt with the seed particle, so that the seed particle rises on top of a column whereby to form a nanowhisker, the column of the nanowhisker having a constant diameter of a nanometer dimension; during the growth of the column, selectively changing the compositions of said gases whereby to abruptly change the composition of the material of the column at regions along its length, whilst retaining epitaxial growth, wherein lattice mismatch between the materials of the portions is accommodated by radial outward bulging of the whisker at the boundaries.
摘要翻译：通过用具有不同带隙的不同材料形成晶须的长度段，在纳米晶须中形成共振隧道二极管和其它一维电子，光子结构和机电MEMS器件作为异质结构。因此，共振隧道二极管包括在一端具有种子颗粒熔体的纳米晶须和具有纳米尺寸的恒定直径的柱，例如显示量子限制效应，所述柱包括第一和第二半导体部分，分别包括发射极和集电体，并且设置在第一和第二半导体部分之间，具有与第一和第二半导体部分的带隙不同的带隙的材料的第三和第四部分，以及具有与第一和第二半导体部分不同带隙的半导体材料的第五中心部分第三部分和第四部分的第三部分和第四部分之间，设置在第三部分和第四部分之间并形成量子裂纹。 RTD通过包括将种子颗粒沉积在基材上的方法制备，并且在温度和压力的受控条件下将种子颗粒暴露于材料，以便与种子颗粒形成熔体，使得种子颗粒在形成纳米晶须的柱，纳米晶须柱具有恒定直径的纳米尺寸; 在柱的生长期间，选择性地改变所述气体的组成，从而在保持外延生长的同时保持外延生长同时突然改变其长度区域的柱材料的组成，其中部分材料之间的晶格失配通过径向在晶界向外膨胀的边界。

5. 发明授权

EP0643883B1 SUB-NANOSCALE ELECTRONIC CIRCUIT AND PROCESS FOR MANUFACTURING THE SAME 失效
标题翻译：电子电路纳米区和方法及其
公开(公告)号：EP0643883B1
公开(公告)日：2003-10-01
申请号：EP93914286.5
申请日：1993-06-01
申请人： YALE UNIVERSITY , UNIVERSITY OF SOUTH CAROLINA
发明人： REED, Mark, A. , TOUR, James, M.
IPC分类号： H03K17/84 , H01L21/265 , H01L51/20 , G02B27/00
CPC分类号： H01L51/0068 , B82Y10/00 , B82Y30/00 , H01L27/02 , H01L29/7606 , H01L29/882 , H01L51/0036 , H01L51/0052 , H01L51/0094 , H01L51/0595 , H01L2924/0002 , H01L2924/00
摘要： A new class of electronic systems, wherein microelectronic semiconductor integrated circuit devices are integrated on a common substrate with molecular electronic devices.

6. 发明授权

EP0617469B1 Current - controlled resonant tunneling device 失效
标题翻译：电流控制的共振隧穿装置，其包括
公开(公告)号：EP0617469B1
公开(公告)日：1999-04-21
申请号：EP94104261.6
申请日：1994-03-18
申请人： Hughes Electronics Corporation
发明人： Chow, David H. , Schulman, Joel N.
IPC分类号： H01L29/88
CPC分类号： B82Y10/00 , H01L29/882

7. 发明公开

EP0768707A3 Molecular beam epitaxy process with growing layer thickness control 失效
标题翻译：分子束外延与生长的厚度控制
公开(公告)号：EP0768707A3
公开(公告)日：1999-01-27
申请号：EP96101335.6
申请日：1996-01-31
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Celii, Francis G. , Kao, Yung-Chung , Katz, Alan J. , Moise, Theodore S.
IPC分类号： H01L21/203 , C30B23/02 , C30B29/40 , H01L29/88
CPC分类号： H01L29/882 , B82Y10/00 , B82Y15/00 , C30B23/002 , C30B29/40 , H01L21/02392 , H01L21/02463 , H01L21/02546 , H01L21/02631 , Y10T117/1004 , Y10T117/1008
摘要： Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.

8. 发明授权

EP0322718B1 Resonant tunneling device 失效
标题翻译：共振隧穿效应
公开(公告)号：EP0322718B1
公开(公告)日：1996-09-18
申请号：EP88121317.7
申请日：1988-12-20
申请人： HITACHI, LTD.
发明人： Mizuta, Hiroshi , Tanoue, Tomonori , Kusano, Chushirou Sankopo Higashitokorozawa , Takahashi, Susumu
IPC分类号： H01L29/88 , H01L29/12
CPC分类号： B82Y10/00 , H01L29/155 , H01L29/882

9. 发明授权

EP0577137B1 A quantum effect device and a method of producing the same 失效
标题翻译：量子效应器件及其制造方法
公开(公告)号：EP0577137B1
公开(公告)日：1996-09-11
申请号：EP93110609.0
申请日：1993-07-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Okada, Kenji , Morimoto, Kiyoshi , Udagawa, Masaharu , Yuki, Koichiro , Niwa, Masaaki , Hirai, Yoshihiko , Yasui, Juro
IPC分类号： H01L21/334
CPC分类号： B82Y10/00 , B82Y30/00 , H01L29/1037 , H01L29/66931 , H01L29/772 , H01L29/882 , Y10S438/911 , Y10S438/962

10. 发明公开

EP0703626A3 Resonant tunneling structure and fabrication methods 失效
标题翻译：与谐振隧穿效应和制造方法的结构
公开(公告)号：EP0703626A3
公开(公告)日：1996-08-07
申请号：EP95114532.5
申请日：1995-09-14
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Smith, Bryan D. , Randall, John N. , Frazier, Gary A.
IPC分类号： H01L29/00 , H01L21/20
CPC分类号： B82Y10/00 , H01L29/125 , H01L29/127 , H01L29/882 , Y10S438/962 , Y10S438/979
摘要： A resonant tunneling diode (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication method uses angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.

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