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1. 发明公开

EP4376089A1 SILICON CARBIDE INTEGRATED DEVICE AND METHOD FOR MANUFACTURING AN INTEGRATED DEVICE 审中-公开
公开(公告)号：EP4376089A1
公开(公告)日：2024-05-29
申请号：EP23209667.7
申请日：2023-11-14
申请人： STMicroelectronics S.r.l.
发明人： FRAGAPANE, Leonardo
IPC分类号： H01L29/06 , H01L29/12 , H01L29/78
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/7811 , H01L29/0619 , H01L29/0692
摘要： An integrated device (11) includes: a semiconductor structural layer (5), including silicon carbide and having a first conductivity type; a power device (2) integrated in the structural layer (5); and an edge termination structure (3), extending in a ring around the power device (2) and having a second conductivity type. The edge termination structure (3) includes a plurality of ring structures (10, 11, 12) each arranged around the power device (2) and in contiguous pairs. At least a first one (10, 11) of the ring structures (10, 11, 12) comprises a transition region (10b, 11b) contiguous to a second one (11, 12) of the ring structures (10, 11, 12). The transition region (10b, 11b) includes connection regions (10c, 11c), having the second conductivity type, connected to the second one (11, 12) of the ring structures (10, 11, 12) and alternating with charge control regions (10d, 11d) having the first conductivity type.

2. 发明公开

EP4364208A1 AN ADDRESSABLE QUANTUM DOT ARRAY 审中-公开
公开(公告)号：EP4364208A1
公开(公告)日：2024-05-08
申请号：EP22735643.3
申请日：2022-06-29
申请人： Technische Universiteit Delft
发明人： VELDHORST, Menno , HENDRICKX, Nico Willem
IPC分类号： H01L29/06 , H01L27/10 , H01L29/41 , H01L29/423 , H01L29/66 , H01L29/76 , B82Y10/00 , H01L29/12
CPC分类号： B82Y10/00 , H01L29/66977 , H01L29/423 , H01L29/413 , H01L29/7613 , H01L29/127 , H01L29/0692 , G06N10/40 , H01L27/10

3. 发明公开

EP4356431A1 QUBIT-ELEMENT 审中-公开
公开(公告)号：EP4356431A1
公开(公告)日：2024-04-24
申请号：EP21733935.7
申请日：2021-06-14
申请人： Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
发明人： KÜNNE, Matthias , SCHREIBER, Lars
IPC分类号： H01L29/76 , H01L29/40 , H01L29/423 , H01L29/12 , H01L21/334 , B82Y10/00 , B82Y40/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01L29/66977 , H01L29/7613 , H01L29/423 , H01L29/122 , H01L29/401

4. 发明公开

EP4356417A1 QUBIT-ELEMENT 审中-公开
公开(公告)号：EP4356417A1
公开(公告)日：2024-04-24
申请号：EP21733936.5
申请日：2021-06-14
申请人： Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
发明人： KÜNNE, Matthias , SCHREIBER, Lars
IPC分类号： H01L21/334 , H01L29/76 , H01L29/40 , H01L29/423 , H01L29/12 , H01L29/66 , B82Y10/00 , B82Y40/00
CPC分类号： H01L29/66977 , H01L29/7613 , H01L29/122 , B82Y10/00 , B82Y40/00

5. 发明公开

EP4333027A1 METHOD OF MANUFACTURING OHMIC CONTACTS OF AN ELECTRONIC DEVICE, WITH THERMAL BUDGET OPTIMIZATION 审中-公开
公开(公告)号：EP4333027A1
公开(公告)日：2024-03-06
申请号：EP23190768.4
申请日：2023-08-10
申请人： STMicroelectronics S.r.l.
发明人： SAGGIO, Mario Giuseppe , CAMALLERI, Cateno Marco , BELLOCCHI, Gabriele , RASCUNA', Simone
IPC分类号： H01L21/336 , H01L29/45 , H01L29/78 , H01L29/12
摘要： Method of manufacturing an electronic device (20), comprising forming an ohmic contact (59; 61) at an implanted region (26; 55) of a semiconductor body (48). Forming the ohmic contact provides for performing a high-temperature thermal process for allowing a reaction between a metal material and the material of the semiconductor body, for forming a silicide of the metal material. The step of forming the ohmic contact is performed prior to a step of forming one or more electrical structures (52, 56) which include materials that may be damaged by the high temperature of the thermal process of forming the silicide.

6. 发明公开

EP4246590A3 QUANTUM PROCESSING SYSTEMS AND METHODS 审中-公开
公开(公告)号：EP4246590A3
公开(公告)日：2024-02-07
申请号：EP23161820.8
申请日：2023-03-14
申请人： Silicon Quantum Computing Pty Ltd
发明人： KRANZ, Ludwik , SIMMONS, Michelle Yvonne , RAHMAN, Rajib
IPC分类号： H01L29/66 , H01L29/12 , H01L29/36 , H01L29/423 , H01L29/76 , B82Y10/00
摘要： A quantum processing element is disclosed. The qubit includes a semiconductor substrate (204), a dielectric material (205) forming an interface with the semiconductor substrate, a confinement gate (211) and antenna (214) on the dielectric material, and a donor molecule (208a, 208b) embedded in the semiconductor. The donor molecule includes a plurality of dopant dots (210a, 210b, 210c) embedded in the semiconductor, each dopant dot includes one or more dopant atoms, and one or more electrons/holes confined to the dopant dots. A distance between the dopant dots is between 3 and 9 nanometres.

7. 发明授权

EP3352225B1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME, ELECTRIC POWER CONVERTING DEVICE, THREE-PHASE MOTOR SYSTEM, AUTOMOBILE AND RAILWAY VEHICLE 审中-实审
公开(公告)号：EP3352225B1
公开(公告)日：2023-10-25
申请号：EP15904057.5
申请日：2015-09-15
发明人： MORI, Yuki , SHIMA, Akio
IPC分类号： H01L29/78 , H01L29/06 , H01L21/336 , H01L29/12

8. 发明公开

EP4192781A1 SILICON QUANTUM DEVICE STRUCTURES DEFINED BY METALLIC STRUCTURES 审中-实审转让
公开(公告)号：EP4192781A1
公开(公告)日：2023-06-14
申请号：EP21755477.3
申请日：2021-08-05
申请人： Quantum Motion Technologies Limited
发明人： PATOMAKI, Sofia , MORTON, John
IPC分类号： B82Y10/00 , G06N10/00 , H01L29/06 , H01L29/12 , H01L29/423 , H01L29/66 , H01L29/76

9. 发明公开

EP4152407A1 SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开转让
公开(公告)号：EP4152407A1
公开(公告)日：2023-03-22
申请号：EP22195045.4
申请日：2022-09-12
申请人： Hitachi Metals, Ltd.
发明人： KONISHI, Kumiko , OKINO, Hiroyuki , HIROOKA, Taisuke
IPC分类号： H01L29/08 , H01L29/12 , H01L29/78 , H01L21/336
摘要： In a silicon carbide substrate including: a SiC substrate; and a first semiconductor layer, a second semiconductor layer and a drift layer that are epitaxial layers sequentially formed on the SiC substrate, an impurity concentration of the first semiconductor layer is lower than impurity concentrations of the SiC substrate and the second semiconductor layer, and the second semiconductor layer is formed to have a high impurity concentration or a large thickness.

10. 发明公开

EP4145534A1 INSULATED GATE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP4145534A1
公开(公告)日：2023-03-08
申请号：EP21909946.2
申请日：2021-10-26
申请人： Fuji Electric Co., Ltd.
发明人： NARITA, Syunki
IPC分类号： H01L29/78 , H01L21/336 , H01L29/06 , H01L29/12 , H01L29/739
摘要： Provide is a trench-gate insulated gate semiconductor device capable of increasing a cell density while avoiding an increase in ON resistance. The insulated gate semiconductor device includes: a carrier transport layer (1, 3) of a first conductivity-type; an injection control region (4) of a second conductivity-type provided on a top surface of the carrier transport layer (1, 3); a carrier supply region (5) of the first conductivity-type provided at an upper part of the injection control region (4); a base contact region (7) of the second conductivity-type provided at an upper part of the injection control region (4); trenches (8a, 8b) penetrating the injection control region (4) to reach the carrier transport layer (1, 3); an insulated gate structure (9, 10a), (9, 10b) provided inside the respective trenches (8a, 8b); an upper buried region (6) of the second conductivity-type being in contact with a bottom surface of the injection control region (4); and a lower buried region of the second conductivity-type being in contact with a bottom surface of the upper buried region (6) and a bottom surface of the respective trenches (8a, 8b), wherein the lower buried region (2) is separated from each other via the carrier transport layer (1, 3) between the trenches (8a, 8b).

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