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1. 发明公开

EP3255653A1 SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL SUBSTRATE, AND METHOD FOR PRODUCING INFRARED DETECTOR 审中-实审
标题翻译：半导体晶体基板，红外探测器，半导体晶体基板的制造方法以及红外探测器的制造方法
公开(公告)号：EP3255653A1
公开(公告)日：2017-12-13
申请号：EP17165717.4
申请日：2017-04-10
申请人： FUJITSU LIMITED
发明人： OKUMURA, Shigekazu , TOMABECHI, Shuichi , SUZUKI, Ryo
IPC分类号： H01L21/20
CPC分类号： H01L27/1443 , H01L21/02395 , H01L21/02398 , H01L21/02466 , H01L21/02507 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L27/1446 , H01L31/03046 , H01L31/035236 , H01L31/1844
摘要： A semiconductor crystal substrate includes a crystal substrate that is formed of a material including one of GaSb and InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb. The first buffer layer has a p-type conductivity, and the second buffer layer has an n-type conductivity.
摘要翻译：半导体晶体基板包括：晶体基板，其由包括GaSb和InAs中的一种的材料形成;第一缓冲层，其形成在晶体基板上并由包括GaSb的材料形成;以及第二缓冲层，其形成在第一缓冲层并且由包括GaSb的材料形成。第一缓冲层具有p型导电性，并且第二缓冲层具有n型导电性。

2. 发明公开

EP3067941A4 INFRARED DETECTION ELEMENT 有权
标题翻译： INFRAROTDETEKTIONSELEMENT
公开(公告)号：EP3067941A4
公开(公告)日：2017-07-19
申请号：EP14860034
申请日：2014-10-31
申请人： HAMAMATSU PHOTONICS KK
发明人： MISHIMA ASUKA , OSHIMURA YOSHINORI
IPC分类号： H01L31/10
CPC分类号： H01L31/03046 , H01L21/02395 , H01L21/02463 , H01L21/02466 , H01L21/02505 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L31/0304 , H01L31/0336 , H01L31/035236 , H01L31/105 , Y02E10/544
摘要： This infrared detection element includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. A critical film thickness hc of the InAs layer satisfies a relation of hc
摘要翻译：该红外检测元件包括缓冲层（InAsSb层）3，缓冲层（InAs层）4和光吸收层（InAsSb层）5。InAs层的临界膜厚度hc满足关系hc

3. 发明公开

EP2894680A1 GALNASSB SOLID SOLUTION-BASED HETEROSTRUCTURE, METHOD FOR PRODUCING SAME AND LIGHT EMITTING DIODE BASED ON SAID HETEROSTRUCTURE 审中-公开
标题翻译： ON SOLID基于溶液的的GaInAsSb异质结构，其制造和发光二级管的方法根据本异质结构
公开(公告)号：EP2894680A1
公开(公告)日：2015-07-15
申请号：EP13835368.5
申请日：2013-09-10
申请人： Limited Liability Company "LED Microsensor NT"
发明人： STOYANOV, Nikolay Deev , ZHURTANOV, Bizhigit Erzhigitovich
IPC分类号： H01L33/30 , H01L21/208
CPC分类号： H01L33/0025 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02546 , H01L21/02549 , H01L21/02623 , H01L33/0062 , H01L33/12 , H01L33/30
摘要： The present invention relates to a field of semiconductor devices, and more particularly to a heterostructure based on a GaInAsSb solid solution with a reverse p-n junction, to a method of producing the heterostructure, and to a light emitting diode based on the heterostructure. The provided heterostructure comprises a substrate containing GaSb, an active layer which contains a GaInAsSb solid solution and which is disposed over the substrate, a confining layer for localizing major carriers which contains a AlGaAsSb solid solution and which is disposed over the active layer, a contact layer which contains GaSb and which is disposed over the confining layer, wherein the heterostructure further comprises a buffer layer which contains a GaInAsSb solid solution and which is disposed between the substrate and the active layer, the buffer layer containing indium (In) less than the active layer. Use of this buffer layer makes it possible to localize minor carriers in an active region, thereby resulting in an increased amount of radiative recombination and, therefore, an increased quantum efficiency of the heterostructure. Furthermore, use of the buffer layer makes it possible to minimize an influence of defects penetrating from the substrate into the active region, thereby resulting in reduction in deep acceptor levels and, correspondingly, in reduction in amount of non-radiative Shokley-Read-Hall recombination, and also to increased quantum efficiency of the heterostructure. Light emitting diodes produced on the basis of the provided heterostructure emit in a mid-infrared spectral range of 1.8-2.4 µm.
摘要翻译：本发明涉及半导体装置的领域，并且更具体地涉及基于与反向的p-n结a的GaInAsSb固溶体的异质结构，以产生所述异质结构的方法，以及基于所述异质结构的发光二极管。所提供的异质结构包括有源层上含有的GaSb一个基板其中含有的GaInAsSb固溶体和所有其被设置在所述底物，用于定位其中含有的AlGaAsSb固溶体主要载流子的约束层和所有其被布置在有源层，接触其被布置在所述约束层，worin异质另外层，其含有的GaSb和所有包括含有一个的GaInAsSb固溶体的缓冲层和所有其在衬底和有源层，所述缓冲层包含铟（In）小于之间设置有源层。该缓冲层的使用使得能够定位少数载流子在有源区，从而在辐射复合的增加量所得的和，因此，在异质结构的增加的量子效率。进一步，使用所述缓冲层的，能够对从所述基板穿透到有源区，从而缩小了在深的受主能级，并且相应的缺陷影响最小化，在减少非辐射Shokley-读霍尔的量重组，并因此在异质结构的增加的量子效率。发光二极管中产生的提供异质结构的基础上，在发射的1.8-2.4微米的中红外光谱范围内。

4. 发明授权

EP2131398B1 COMPOUND SEMICONDUCTOR LAMINATE, PROCESS FOR PRODUCING THE COMPOUND SEMICONDUCTOR LAMINATE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体复合层压板，一种用于制造半导体层积体和半导体器件
公开(公告)号：EP2131398B1
公开(公告)日：2015-05-20
申请号：EP08738698.3
申请日：2008-03-21
申请人： Asahi Kasei EMD Corporation
发明人： SHIBATA, Yoshihiko , MIYAHARA, Masatoshi
IPC分类号： H01L29/26 , C30B23/02 , C30B29/40 , C30B25/18 , H01L21/20 , H01L29/20 , H01L43/06 , H01L43/08
CPC分类号： H01L29/20 , C30B23/025 , C30B25/18 , C30B29/40 , C30B29/406 , H01L21/02381 , H01L21/02439 , H01L21/0254 , H01L21/02549 , H01L29/201 , H01L29/267 , H01L43/065

5. 发明授权

EP2064735B1 ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS 有权
标题翻译：兼容介质层活跃的地区
公开(公告)号：EP2064735B1
公开(公告)日：2015-03-18
申请号：EP07842712.7
申请日：2007-09-18
申请人： Intel Corporation
发明人： RANADE, Pushkar
IPC分类号： H01L21/336 , H01L29/78 , H01L21/28
CPC分类号： H01L21/0228 , H01L21/02164 , H01L21/02181 , H01L21/02236 , H01L21/02238 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/28167 , H01L21/28255 , H01L21/28264 , H01L21/31055 , H01L21/31604 , H01L21/47 , H01L27/0886 , H01L29/0649 , H01L29/0653 , H01L29/0673 , H01L29/0847 , H01L29/1054 , H01L29/16 , H01L29/165 , H01L29/20 , H01L29/205 , H01L29/267 , H01L29/41766 , H01L29/41783 , H01L29/4238 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/66492 , H01L29/66522 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/66651 , H01L29/66795 , H01L29/7833 , H01L29/7848 , H01L29/785 , H01L29/7851 , H01L29/78654
摘要： A method to form a semiconductor structure with an active region and a compatible dielectric layer is described. In one embodiment, a semiconductor structure has a dielectric layer comprised of an oxide of a first semiconductor material, wherein a second (and compositionally different) semiconductor material is formed between the dielectric layer and the first semiconductor material. In another embodiment, a portion of the second semiconductor material is replaced with a third semiconductor material in order to impart uniaxial strain to the lattice structure of the second semiconductor material.

6. 发明公开

EP2748838A1 A METHOD FOR GROWING III-V MATERIALS ON A NON III-V MATERIAL SUBSTRATE COMPRISING STEPS IMPROVING DISLOCATION FAULT DENSITY OF A FINISHED MATERIAL STRUCTURE SUITABLE FOR USE IN SEMICONDUCTOR MANUFACTURING AND SEMICONDUCTOR APPLICATIONS 有权
标题翻译： METHOD FOR GROWING III-V族材料ON A SUBSTRATE从非III-V材料结合步骤提高制造材料结构DISLOKATIONSFEHLERDICHTE FOR USE IN半导体制造和半导体应用
公开(公告)号：EP2748838A1
公开(公告)日：2014-07-02
申请号：EP12748503.5
申请日：2012-08-22
申请人： Integrated Optoelectronics AS
发明人： BUGGE, Renato , MYRVÅGNES, Geir , NILSEN, Tron Arne
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L21/02549 , C30B23/025 , C30B23/066 , C30B29/42 , H01L21/02381 , H01L21/02463 , H01L21/02466 , H01L21/02502 , H01L21/02521 , H01L21/02546 , H01L21/02617 , H01L21/02631 , H01L21/02661 , H01L29/205
摘要： The present invention relates to a method for manufacturing semiconductor materials comprising epitaxial growing of group III-V materials, for example gallium arsenide (GaAs), on for example a non III-V group material like silicon (Si) substrates (wafers), and especially to pre-processing steps providing a location stabilization of dislocation faults in a surface layer of the non III-V material wafer in an orientation relative to an epitaxial material growing direction during growing of the III-V materials, wherein the location stabilized dislocation fault orientations provides a barrier against threading dislocations (stacking of faults) from being formed in the growing direction of the III-V materials during the epitaxial growth process.

7. 发明授权

EP2246892B1 Method of manufacturing quantum dots in a semiconductor device 有权
标题翻译：制造量子点的方法在半导体器件中
公开(公告)号：EP2246892B1
公开(公告)日：2013-04-03
申请号：EP10168698.8
申请日：2007-05-15
申请人： FUJITSU LIMITED , The University of Tokyo
发明人： Arakawa, Yasuhiko , Guimard, Denis , Tsukamoto, Shiro , Ebe, Hiroji , Sugawara, Mitsuru
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L21/02395 , H01L21/02463 , H01L21/02491 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L29/66977 , H01L33/06 , H01S5/305 , H01S5/3054 , H01S5/3412 , H01S2304/04

8. 发明公开

EP2461374A1 SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：EP2461374A1
公开(公告)日：2012-06-06
申请号：EP10806309.0
申请日：2010-07-07
申请人： Sumitomo Electric Industries, Ltd.
发明人： FUJII, Kei , ISHIZUKA, Takashi , AKITA, Katsushi , NAGAI, Youichi , TANABE, Tatsuya
IPC分类号： H01L31/105 , H01L31/18
CPC分类号： H01L31/035236 , B82Y20/00 , H01L21/02392 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L31/1035 , H01L31/109 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).
摘要翻译：本发明提供一种半导体装置的制造方法以及半导体装置，该半导体装置能够在维持良好的结晶性的同时高效地生长具有多个对的多量子阱结构。本发明的半导体器件制造方法包括形成具有50对或更多对III-V族化合物半导体量子阱的多量子阱结构3的步骤。在形成多量子阱结构3的步骤中，多量子阱结构由仅使用金属有机源（所有金属有机源MOVPE）的金属有机气相外延形成。

9. 发明公开

EP2246892A2 Method of manufacturing quantum dots in a semiconductor device 有权
标题翻译： HerstellungsverfahrenfürQuantenpunkten在einer Halbleitervorrichtung
公开(公告)号：EP2246892A2
公开(公告)日：2010-11-03
申请号：EP10168698.8
申请日：2007-05-15
申请人： FUJITSU LIMITED , The University of Tokyo
发明人： Arakawa, Yasuhiko , Guimard, Denis , Tsukamoto, Shiro , Ebe, Hiroji , Sugawara, Mitsuru
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L21/02395 , H01L21/02463 , H01L21/02491 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L29/66977 , H01L33/06 , H01S5/305 , H01S5/3054 , H01S5/3412 , H01S2304/04
摘要： A method of manufacturing a semiconductor device comprising the steps of : forming a quantum dot on a base layer by self-assembled growth; forming a Sb on a surface of the quantum dot by irradiating a surface of the dot with an organic Sb raw material gas; and growing a capping layer on the quantum dot.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：通过自组装生长在基底层上形成量子点; 通过用有机Sb原料气体照射点的表面在量子点的表面上形成Sb; 并在量子点上生长覆盖层。

10. 发明公开

EP1858084A2 Method of manufacturing quantum dots in a semiconductor device 有权
标题翻译： HerstellungsverfahrenfürQuantenpunkten在einer Halbleitervorrichtung
公开(公告)号：EP1858084A2
公开(公告)日：2007-11-21
申请号：EP07108221.8
申请日：2007-05-15
申请人： Fujitsu Ltd. , The University of Tokyo
发明人： Arakawa, Yasuhiko , Guimard, Denis , Tsukamoto, Shiro , Ebe, Hiroji , Sugawara, Mitsuru, Fujitsu Limited
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L21/02395 , H01L21/02463 , H01L21/02491 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L29/66977 , H01L33/06 , H01S5/305 , H01S5/3054 , H01S5/3412 , H01S2304/04
摘要： The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.
摘要翻译：制造半导体器件的方法包括通过自组装生长在基底层10上形成量子点16的步骤; 在形成量子点16之前或阶段中将Sb或GaSb照射到基层10的表面的步骤; 用As原料气蚀刻量子点16的表面，从而除去沉积在量子点16表面上的含有Sb的InSb层18; 并且在去除了InSb层18的量子点16上生长封盖层22。

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