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1. 发明授权

EP2192617B1 Quantum Semiconductor Device and Method for Fabricating the Same 有权
标题翻译：量子半导体器件及其制造方法
公开(公告)号：EP2192617B1
公开(公告)日：2012-02-01
申请号：EP10155625.6
申请日：2003-05-20
申请人： FUJITSU LIMITED
发明人： SONG, Hai-Zhi , OHSHIMA, Toshio
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L29/127 , H01L21/02395 , H01L21/02546 , H01L21/02639 , H01L29/66439 , H01L29/7613 , Y10S438/962 , Y10S977/781 , Y10S977/782

2. 发明公开

EP2298968A3 Method for growing nanowires 审中-公开
标题翻译：方法生产的纳米线
公开(公告)号：EP2298968A3
公开(公告)日：2011-10-05
申请号：EP10195590.4
申请日：2001-08-22
申请人： President and Fellows of Harvard College
发明人： Lieber, Charles , Cui, Ying , Duan, Xiangfeng , Huang, Yung-Sheng
IPC分类号： C30B7/00 , C30B29/60 , H01L29/06 , H01L21/02 , C30B11/12 , H01L29/207 , H01L29/16 , B82Y10/00 , B82Y15/00 , G11C13/00 , C30B11/00 , C30B25/00 , G01N27/414 , G01N33/543 , H01L51/00
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A method comprises providing a population of catalyst particles and growing a population of semiconductor nanowires catalytically from the population of catalyst particles. The nanowires of the population have a variation in diameter of less than about 20%, and the nanowires of the population have a smallest width less than 500 nanometers. Preferably the nanowires of the population have a variation in diameter of less than about 10%.

3. 发明公开

EP2360298A2 Method for depositing a semiconductor nanowire 审中-公开
标题翻译：维尔法赫·祖尔·阿切斯登
公开(公告)号：EP2360298A2
公开(公告)日：2011-08-24
申请号：EP10195600.1
申请日：2001-08-22
申请人： President and Fellows of Harvard College
发明人： Lieber, Charles , Cui, Ying , Duan, Xiangfeng , Huang, Yung-Sheng
IPC分类号： C30B29/60 , C30B7/00 , H01L29/06 , H01L21/02
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A method for depositing one or more semiconductor nanowires on a substrate, the method comprising providing a substrate and depositing the one or more semiconductor nanowires on the surface of the substrate.
摘要翻译：一种用于在衬底上沉积一个或多个半导体纳米线的方法，所述方法包括提供衬底并在所述衬底的表面上沉积所述一个或多个半导体纳米线。

4. 发明公开

EP2082425A4 WELL-ALIGNED, HIGH ASPECT-RATIO, HIGH-DENSITY SILICON NANOWIRES AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：与用于生产高纵横比和工艺很好地对准密度硅纳米线
公开(公告)号：EP2082425A4
公开(公告)日：2011-07-13
申请号：EP07839257
申请日：2007-10-05
申请人： HITACHI CHEMICAL CO LTD , HITACHI CHEMICAL RES CT INC
发明人： WU YONGXIAN
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L31/035281 , B82Y10/00 , H01L29/0665 , H01L31/072 , Y02E10/50 , Y10S438/93 , Y10S438/962 , Y10S977/762 , Y10S977/768 , Y10S977/789

5. 发明公开

EP2253583A2 Method of harvesting nanostructures from a substrate 审中-公开
标题翻译： Verfahren zur Gewinnung von Nanostrukturen aus einem Substrat
公开(公告)号：EP2253583A2
公开(公告)日：2010-11-24
申请号：EP10008050.6
申请日：2003-04-01
申请人： Nanosys, Inc.
发明人： Empedocles, Stephen , Bock, Larry , Chow, Calvin , Duan, Xianfeng , Niu, Chungming , Pontis, George , Sahi, Vijendra , Romano, Linda T. , Stumbo, David
IPC分类号： B81C99/00
CPC分类号： H01L51/0048 , B01J23/52 , B81B2203/0361 , B81B2207/015 , B81C3/005 , B81C99/008 , B81C2203/057 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B5/743 , G11C2213/81 , H01L29/7869 , H01L51/0001 , H01L51/0595 , H01L2924/0002 , Y10S438/962 , Y10S977/762 , Y10S977/856 , Y10S977/857 , Y10S977/858 , Y10S977/89 , H01L2924/00
摘要： Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.
摘要翻译：提供了将纳米结构组装成功能元件如结，阵列和器件的纳米结构制造方法和方法。还提供了实施方法的系统。

6. 发明公开

EP2082425A1 WELL-ALIGNED, HIGH ASPECT-RATIO, HIGH-DENSITY SILICON NANOWIRES AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：与用于生产高纵横比和工艺很好地对准密度硅纳米线
公开(公告)号：EP2082425A1
公开(公告)日：2009-07-29
申请号：EP07839257.8
申请日：2007-10-05
申请人： Hitachi Chemical Company, Ltd. , Hitachi Chemical Research Center, Inc.
发明人： WU, Yongxian
IPC分类号： H01L27/00
CPC分类号： H01L31/035281 , B82Y10/00 , H01L29/0665 , H01L31/072 , Y02E10/50 , Y10S438/93 , Y10S438/962 , Y10S977/762 , Y10S977/768 , Y10S977/789
摘要： A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are also described.

7. 发明公开

EP1619277A3 Procédé de réalisation d'une structure dotée d'au moins une zone d'un ou plusieurs nanocristaux semi-conducteurs localisée avec précision 有权
标题翻译：制造具有多个半导体纳米晶体之一的至少一个位置精确区或结构的方法
公开(公告)号：EP1619277A3
公开(公告)日：2009-07-08
申请号：EP05106613.2
申请日：2005-07-19
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： Vinet, Maud , Barbe, Jean-Charles , Mur, Pierre , De Crecy, François
IPC分类号： C30B29/60 , H01L29/76
CPC分类号： C30B29/60 , B82Y10/00 , H01L29/66439 , H01L29/7613 , Y10S438/962
摘要： Il s'agit d'un procédé de réalisation d'une structure dotée d'au moins une zone d'un ou plusieurs nanocristaux semi-conducteurs (13). Il consiste :
- à insoler avec un faisceau d'électrons (11) au moins une zone (12) d'un film semi-conducteur (1) reposant sur un support électriquement isolant (2), la zone insolée (12) contribuant à définir au moins une zone de démouillage (10) du film (1),
- à recuire le film (1) à haute température de manière à ce que la zone de démouillage (10) se rétracte en donnant la zone d'un ou plusieurs nanocristaux (13).

8. 发明公开

EP1170799A3 Elektronisches Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements 审中-公开
标题翻译：电子装置和方法，用于制造电子器件
公开(公告)号：EP1170799A3
公开(公告)日：2009-04-01
申请号：EP01113210.7
申请日：2001-05-30
申请人： Infineon Technologies AG
发明人： Hofmann, Franz, Dr. , Kreupl, Franz, Dr. , Luyken, Richard Johannes, Dr. , Schloesser, Till, Dr.
IPC分类号： H01L27/115 , H01L21/8247 , H01L51/30
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5671 , G11C2213/71 , G11C2213/77 , G11C2213/81 , G11C2216/08 , H01L51/0048 , Y10S438/962 , Y10S977/943
摘要： Ein elektronisches Bauelement weist mehrere elektrisch leitende erste Nanodrähte auf, ein auf den ersten Nanodrähten aufgebrachtes Schichtensystem sowie auf dem Schichtensystem aufgebrachte zweite Nanodrähte. Die ersten und zweiten Nanodrähte sind zueinander windschief angeordnet. Das Schichtensystem ist derart eingerichtet, dass von den Nanodrähten erzeugte Ladungsträger in dem Schichtensystem gespeichert werden können.

9. 发明公开

EP1507293A4 METHOD FOR FORMING QUANTUM DOT, QUANTUM SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：方法量子点教育，量子半导体部件和方法生产
公开(公告)号：EP1507293A4
公开(公告)日：2008-10-15
申请号：EP03752919
申请日：2003-05-20
申请人： FUJITSU LTD
发明人： SONG HAI-ZHI , OHSHIMA TOSHIO
IPC分类号： G01Q80/00 , H01L21/20 , H01L21/335 , H01L29/06 , H01L29/12 , H01L29/76
CPC分类号： H01L29/127 , H01L21/02395 , H01L21/02546 , H01L21/02639 , H01L29/66439 , H01L29/7613 , Y10S438/962 , Y10S977/781 , Y10S977/782
摘要： A method comprises a step of forming an oxide in a dot over the surface of a semiconductor substrate (10), a step of forming a recess (16) in a portion from which the oxide is removed, and the step of growing a semiconductor layer (18) over the semiconductor substrate where the recess is formed to form a quantum dot (20) made of a semiconductor layer on the recess. Since an oxide is formed in a dot over the semiconductor substrate and removed to form a recess in the semiconductor substrate, the recess of a desired size is formed precisely of a desired size in a desired position. Because of the growth of a quantum dot on such a recess, a high-quality quantum dot of a desired size is formed in a desired position.

10. 发明公开

EP1976076A2 Quantum dot semiconductor device 有权
标题翻译： Quantenpunkthalbleitervorrichtung
公开(公告)号：EP1976076A2
公开(公告)日：2008-10-01
申请号：EP08152938.0
申请日：2008-03-18
申请人： Fujitsu Ltd. , The University of Tokyo
发明人： Ebe, Hiroji , Kawaguchi, Kenichi , Morito, Ken , Arakawa, Yasuhiko
IPC分类号： H01S5/34 , H01S5/50
CPC分类号： H01S5/341 , B82Y20/00 , H01S5/3086 , H01S5/309 , H01S5/3412 , H01S5/5009 , H01S2301/04 , Y10S438/962
摘要： Aquantumdot semiconductor device is disclosedwhich prevents variation of the gain in an operation wavelength even if the temperature varies. The quantum dot semiconductor device includes an active layer (11) having a plurality of quantum dot layers (4A, 4B) each including a composite quantum dot (2) formed by stacking a plurality of quantum dots (1) and a side barrier layer (3) formed in contact with a side face of the composite quantum dot (2). The stack number of the quantum dots (1) and the magnitude of strain of the side barrier layer (3) from which each of the quantum dot layers (4A, 4B) is formed is set so that a gain spectrum of the active layer (11) has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range.
摘要翻译：公开了一种即使在温度变化的情况下也能够防止工作波长的增益变动的散热半导体装置。量子点半导体器件包括具有多个量子点层（4A，4B）的有源层（11），每个量子点层包括通过堆叠多个量子点（1）和侧面阻挡层（1）形成的复合量子点（2） 3）与复合量子点（2）的侧面接触形成。形成量子点（1）的堆叠数量和形成每个量子点层（4A，4B）的侧面阻挡层（3）的应变幅度被设定为使得活性层（ 11）具有对应于期望的操作温度范围内的增益谱的偏移量的平坦增益带宽。

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