专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP1672093B1 FILM-FORMING APPARATUS AND FILM-FORMING METHOD 有权
公开(公告)号：EP1672093B1
公开(公告)日：2013-07-10
申请号：EP04773039.5
申请日：2004-09-14
申请人： TOKYO ELECTRON LIMITED , SAMUKAWA, Seiji
发明人： SAMUKAWA, Seiji , NOZAWA, Toshihisa c/o Tokyo Electron AT Limited
IPC分类号： C23C16/455 , H01L21/31
CPC分类号： H01J37/32192 , C23C16/452 , C23C16/5096 , C23C16/511 , H01J37/32357 , H01L21/3145

2. 发明公开

EP2546388A1 Coated substrates and methods for their preparation 审中-公开
标题翻译： Beschichtete底物和Verfahren zu ihrer Herstellung
公开(公告)号：EP2546388A1
公开(公告)日：2013-01-16
申请号：EP12187679.1
申请日：2005-08-12
申请人： Dow Corning Corporation
发明人： Loboda, Mark , Snow, Steven , Weidner, William
IPC分类号： C23C30/00 , C23C28/00
CPC分类号： C23C28/322 , C23C28/34 , C23C28/341 , C23C28/345 , C23C28/3455 , C23C28/42 , C23C28/44 , H01L21/02126 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3145 , H01L21/31633 , Y10T428/24975 , Y10T428/24992
摘要： Coated substrates containing at least one barrier layer comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm 3 and at least one barrier layer selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride.
摘要翻译：包含至少一个阻挡层的涂覆基材包含密度为至少1.6g / cm 3的氢化硅氧烷和至少一种选自铝，氧化铝，氮化铝，氮氧化铝，钛，氧化钛，氮化钛，和氮氧化钛。

3. 发明公开

EP1806780A3 Robust shallow trench isolation structures and a method for forming shallow trench isolation structures 审中-公开
标题翻译：平坟隔离结构及其制造方法
公开(公告)号：EP1806780A3
公开(公告)日：2011-06-01
申请号：EP06254630.4
申请日：2006-09-06
申请人： Agere Systems, Inc.
发明人： Nanda, Arun K. , Rossi, Nace , Singh, Ranbir
IPC分类号： H01L21/762 , H01L21/3105 , H01L21/316
CPC分类号： H01L21/31116 , H01L21/3145 , H01L21/3148 , H01L21/3185 , H01L21/76232
摘要： In a semiconductor substrate, a shallow trench isolation structure having a dielectric material disposed in voids of a trench-fill material and a method for forming the shallow trench isolation structure. The voids may be formed during a wet clean process after the dielectric material is formed in the trench. A conformal silicon nitride layer is formed over the substrate and in the voids. After removal of the silicon nitride layer, the voids are at least partially filled by the silicon nitride material.

4. 发明公开

EP2261956A3 Dielectric film 审中-公开
标题翻译：介电层
公开(公告)号：EP2261956A3
公开(公告)日：2011-03-30
申请号：EP10180014.2
申请日：2002-09-17
申请人： Advion BioSystems, Inc.
发明人： Li, Jie , Corso, Thomas N. , Schultz, Gary A.
IPC分类号： H01L21/306 , H01L29/78 , H01L29/74 , H01L29/00 , B32B7/00 , G02B1/11 , H01B3/10 , H01B3/12 , H01B7/282
CPC分类号： H01B7/2825 , G01N27/44704 , G01N30/7266 , H01B3/10 , H01B3/12 , H01L21/3143 , H01L21/3145 , H01L21/3146
摘要： A dielectric film is provided that comprises a base layer and a capping layer, wherein the film is an effective moisture and ion barrier when disposed between a conductive substrate and a liquid having an electrical potential different than the electrical potential of the substrate.

5. 发明公开

EP2259288A2 Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment 有权
标题翻译：一种用于通过退火，在氢气环境产生的碳化硅层上形成氧化物层的过程
公开(公告)号：EP2259288A2
公开(公告)日：2010-12-08
申请号：EP10179447.7
申请日：2002-04-12
申请人： Cree, Inc.
发明人： Das, Mrinal , Lipkin, Lori
IPC分类号： H01L21/28
CPC分类号： H01L21/02326 , H01L21/02337 , H01L21/049 , H01L21/28008 , H01L21/3145 , H01L29/1608 , H01L29/66068 , H01L29/7802 , H01L29/7827 , H01L29/7838
摘要： Silicon carbide structures are fabricated by fabricating a nitrided oxide layer on a layer of silicon carbide and annealing the nitrided oxide layer in an environment containing hydrogen. Such a fabrication of the nitrided oxide layer may be provided by forming the oxide layer in at least one of nitric oxide and nitrous oxide and/or annealing an oxide layer in at least one of nitric oxide and nitrous oxide. Alternatively, the nitrided oxide layer may be provided by fabricating an oxide layer and fabricating a nitride layer on the oxide layer so as to provide the nitrided oxide layer on which the nitride layer is fabricated. Furthermore, annealing the oxide layer may be provided as a separate step and/or substantially concurrently with another step such as fabricating the nitride layer or performing a contact anneal. The hydrogen environment may be pure hydrogen, hydrogen combined with other gases and/or result from a hydrogen precursor. Anneal temperatures of 400°C or greater are preferred.
摘要翻译：碳化硅结构由制造碳化硅的层上的氮化氧化物层，并在环境中含有氢气退火的氮化氧化物层来制造。在氮化氧化物层的这种制造可通过一氧化氮和一氧化二氮中的至少一种中的一氧化氮和一氧化二氮和/或氧化层的退火中的至少一个上形成的氧化物层来提供。可选地，氮化氧化物层可以通过制造氧化物层上和所述氧化层上制作一个氮化物层，以提供在其上的氮化物层被制造的氮化氧化物层来提供。进一步，退火该氧化物层可被提供作为单独的步骤和/或基本同时地与另一步骤：如制造氮化物层或进行接触退火。氢气环境可以是纯的氢气，氢气与来自氢前体的其它气体和/或结果相结合。的400℃或更高的退火温度是优选的。

6. 发明公开

EP1598859A4 SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理
公开(公告)号：EP1598859A4
公开(公告)日：2010-04-28
申请号：EP04713215
申请日：2004-02-20
申请人： TOKYO ELECTRON LTD
发明人： NAKANISHI TOSHIO , OZAKI SHIGENORI , SASAKI MASARU
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/314 , H01L21/316 , H01L21/318 , H01L29/78 , H01L21/302
CPC分类号： H01L21/02046 , H01L21/3065 , H01L21/3144 , H01L21/3145 , H01L21/31654 , H01L21/3185

7. 发明授权

EP1547138B1 METHODS FOR PRODUCING SILICON NITRIDE FILMS AND SILICON OXYNITRIDE FILMS BY THERMAL CHEMICAL VAPOR DEPOSITION 有权转让
标题翻译：过程通过热化学气相沉积PRODUCING和氮化硅的氮氧化硅
公开(公告)号：EP1547138B1
公开(公告)日：2007-08-22
申请号：EP03772312.9
申请日：2003-09-23
申请人： L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
发明人： DUSSARRAT, Christian , GIRARD, Jean-Marc , Kimura, Takako , TAMAOKI, Naoki , SATO, Yuusuke
IPC分类号： H01L21/318 , C23C16/34 , C23C16/30
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/3145 , H01L21/3185
摘要： Silicon nitride film is formed on substrate (112) by feeding trisilylamine and ammonia into a CVD reaction chamber (11) that holds substrate (112). During this process, the ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least 10 and/or the thermal CVD reaction is run at a temperature no greater than 600°C. Silicon oxynitride is obtained by also introducing an oxygen source gas into the CVD reaction chamber (11). The method according to the invention avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.

8. 发明公开

EP1405932A4 HAFNIUM SILICIDE TARGET FOR GATE OXIDE FILM FORMATION AND ITS PRODUCTION METHOD 有权
标题翻译：硅化铪目标GATE氧化拍戏及其方法
公开(公告)号：EP1405932A4
公开(公告)日：2007-07-18
申请号：EP02733312
申请日：2002-06-05
申请人： NIPPON MINING CO
发明人： IRUMATA SHUICHI , SUZUKI RYO
IPC分类号： C22C27/00 , C23C14/06 , C23C14/08 , C23C14/34 , H01L21/314 , H01L21/316 , H01L29/78
CPC分类号： C22C27/00 , C01B35/04 , C04B35/58092 , C04B35/6268 , C04B35/645 , C04B2235/3891 , C04B2235/5427 , C04B2235/72 , C04B2235/721 , C04B2235/723 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C23C14/0676 , C23C14/08 , C23C14/3414 , H01L21/3145 , H01L21/31604
摘要： The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi 0.05-0.37 . Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO 2 film, and the manufacturing method thereof.

9. 发明授权

EP0685883B1 Method of forming an improved dielectric in an integrated circuit 失效
标题翻译：一种用于集成电路制备改进的介电层的方法
公开(公告)号：EP0685883B1
公开(公告)日：2006-12-27
申请号：EP95303483.2
申请日：1995-05-24
申请人： STMicroelectronics, Inc.
发明人： Hodges, Robert L. , Bryant, Frank R.
IPC分类号： H01L21/762 , H01L21/32 , H01L21/28 , H01L21/8247 , H01L21/8248
CPC分类号： H01L21/28185 , H01L21/28176 , H01L21/28202 , H01L21/3145 , H01L21/32 , H01L21/76202 , H01L21/76216 , H01L29/513 , H01L29/518 , Y10S438/954

10. 发明授权

EP1266054B1 GRADED THIN FILMS 有权
标题翻译：分级薄层
公开(公告)号：EP1266054B1
公开(公告)日：2006-12-20
申请号：EP01918295.5
申请日：2001-03-02
申请人： ASM INTERNATIONAL N.V.
发明人： WERKHOVEN, Christiaan, J. , RAAIJMAKERS, Ivo , HAUKKA, Suvi, P.
IPC分类号： C30B25/14 , C23C16/44 , H01L21/205
CPC分类号： H01L21/28185 , C23C16/029 , C23C16/34 , C23C16/401 , C23C16/403 , C23C16/405 , C23C16/452 , C23C16/45529 , C23C16/45531 , C23C16/45534 , C30B25/14 , H01L21/0214 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/28194 , H01L21/28202 , H01L21/28562 , H01L21/3141 , H01L21/3145 , H01L21/31612 , H01L21/3162 , H01L21/31641 , H01L21/3185 , H01L21/76846 , H01L21/76873 , H01L21/76879 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/518 , H01L2221/1089 , H01L2924/0002 , Y10T428/24942 , Y10T428/2495 , H01L2924/00
摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles (301) or (450, 455, 460, 470) including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources (306 or 460) are introduced during the cyclical process. A graded gate dielectric (72) is thereby provided, even for extremely thin layers. The gate dielectric (72) as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric (72) can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (432) (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses (460) can gradually increase in frequency, forming a graded transition region (434), until pure copper (436) is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式