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1. 发明授权

EP4056730B1 CONTAINER FOR FEEDING A PRECURSOR MATERIAL 有权
公开(公告)号：EP4056730B1
公开(公告)日：2024-07-17
申请号：EP21161744.4
申请日：2021-03-10
IPC分类号： C23C16/448 , C30B25/14 , C30B35/00 , F17C11/00 , B01B1/00 , B01D1/00
CPC分类号： C23C16/4481 , B01B1/005 , B01D1/0011 , F17C11/00 , C30B35/007 , C30B25/14

2. 发明公开

EP4372129A1 EPITAXIAL GROWTH APPARATUS AND GAS SUPPLY CONTROL MODULE USED THEREFOR 审中-实审
公开(公告)号：EP4372129A1
公开(公告)日：2024-05-22
申请号：EP23208705.6
申请日：2023-11-09
申请人： PJP Tech Inc.
发明人： Choi, Bum Ho , Park, Kyung Shin , Kwon, Hyun Ho , Kim, Dong Hyoun , Lim, Suk Ho , Jeong, Jong Wook , Lee, Seung Soo
IPC分类号： C30B25/14 , C23C16/455 , C30B25/16
CPC分类号： C30B25/14 , C30B25/165 , C23C16/45502 , C23C16/45578 , C23C16/45591
摘要： Provided are an epitaxial growth apparatus and a gas supply control module used therefor, the epitaxial growth apparatus including: a reaction chamber; a susceptor positioned in the reaction chamber and configured to seat a wafer thereon; and a gas supply control module configured to control a flow of a gas flowing into the reaction chamber, wherein the gas supply control module includes an injector including a center port corresponding to a central region of the wafer, a pair of edge ports corresponding to both edge regions of the wafer, and a pair of middle ports respectively disposed between the center port and the pair of edge ports, and a flow distribution unit configured to independently distribute the gas flow input from a source module to the ports.

3. 发明授权

EP3642386B1 SUBSTRATE PROCESSING APPARATUS AND METHOD 有权
公开(公告)号：EP3642386B1
公开(公告)日：2024-04-03
申请号：EP17914655.0
申请日：2017-06-21
发明人： MALINEN, Timo , KILPI, Väinö , PUDAS, Marko
IPC分类号： C23C16/455 , C23C16/44 , C30B25/14 , H01L21/67

4. 发明授权

EP3000914B1 METHOD FOR USING A DELIVERY SYSTEM 有权转让
公开(公告)号：EP3000914B1
公开(公告)日：2024-03-27
申请号：EP15192036.0
申请日：2013-07-10
发明人： Woelk, Egbert , DiCarlo, Ronald L. Jr.
IPC分类号： C23C16/448 , C23C16/52 , C30B25/14 , C23C16/455 , C30B25/16 , C30B29/40

5. 发明公开

EP4303338A1 FILM FORMING METHOD, FILM FORMING APPARATUS AND MULTILAYER BODY 审中-实审
公开(公告)号：EP4303338A1
公开(公告)日：2024-01-10
申请号：EP22763168.6
申请日：2022-02-28
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： HASHIGAMI, Hiroshi
IPC分类号： C23C16/455 , C23C16/44 , C30B25/14 , C30B29/16
摘要： The present invention is a method for forming a film, including steps of: forming a film on a base body; and discharging a gas with a discharging unit, wherein a channel plate is provided above the base body so that the channel plate is opposite to the base body via a space, a mixed gas flow linearly flowing from a mixed gas supplying unit toward the discharging unit is formed so that the mixed gas through the space above the base body is along at least a part of a main surface of the base body, a projection is formed on a part of the channel plate and/or a part of the stage so as to inhibit deviation of the mixed gas flow from a direction from the mixed gas supplying unit toward the discharging unit, and the channel plate and the projection are provided so that a gap having a width d2 smaller than a shortest distance d1 in the space between the channel plate and the base body is formed, and the film-formation and the discharging are performed. This can provide a method for forming a film that can manufacture a high-quality film with remarkably reduced surface defects and adhesion of foreign matters with high productivity.

6. 发明公开

EP4208889A1 EPI CHAMBER WITH FULL WAFER LASER HEATING 审中-实审
公开(公告)号：EP4208889A1
公开(公告)日：2023-07-12
申请号：EP21864880.6
申请日：2021-08-11
申请人： Applied Materials, Inc.
发明人： LAU, Shu-Kwan , TANNOUS, Adel George , GENIS, Patrick C. , YE, Zhiyuan
IPC分类号： H01L21/67 , H05B3/00 , C30B25/08 , C30B25/10 , C30B25/14

7. 发明公开

EP3610053A1 UNIFORM DEPOSITION 审中-公开
公开(公告)号：EP3610053A1
公开(公告)日：2020-02-19
申请号：EP17905255.0
申请日：2017-04-10
申请人： Picosun Oy
发明人： MALINEN, Timo , KOSTAMO, Juhana , PUDAS, Marko
IPC分类号： C23C16/455 , C23C16/52 , C23C16/00 , C23C16/44 , C23C18/00 , C30B25/00 , C30B25/16 , C30B25/14 , H01L21/00

8. 发明公开

EP3456860A3 EPITAXIAL GROWTH APPARATUS 审中-公开
公开(公告)号：EP3456860A3
公开(公告)日：2019-05-08
申请号：EP18196541.9
申请日：2013-10-28
申请人： Applied Materials, Inc.
发明人： OKABE, Akira , MORI, Yoshinobu
IPC分类号： C23C16/455 , C30B25/14 , C23C16/48 , C23C16/458 , C30B29/06
摘要： An epitaxial growth apparatus is provided having an improved growing speed. This epitaxial growth apparatus is provided with: a reaction chamber that is demarcated by means of a substrate placing section having a substrate placed thereon, a ceiling plate having light permeability, and sidewall sections; a heating means, which is disposed outside of the reaction chamber, and which heats the substrate through the ceiling plate, said substrate being placed in the reaction chamber; and a reaction gas introducing means, which introduces into the reaction chamber a reaction gas in parallel to the horizontal direction of the substrate. The distance between the center of the ceiling plate and the substrate placing section is less than 10 mm.

9. 发明授权

EP1432844B1 APPARATUS FOR INVERTED CVD 有权
公开(公告)号：EP1432844B1
公开(公告)日：2018-11-21
申请号：EP02776040.4
申请日：2002-09-27
申请人： CREE, INC.
发明人： DENBAARS, Steven , NAKAMURA, Shuji , COULTER, Mike , BATRES, Max
IPC分类号： C23C16/455 , C30B25/14
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45502 , C23C16/4584 , C30B25/10 , C30B25/14
摘要： A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within the chamber. A heater heats the susceptor and a chamber gas inlet allows semiconductor growth gasses into the reactor chamber to deposit semiconductor material on said wafers. A chamber gas outlet is included to allow growth gasses to exit the chamber. In a preferred embodiment, the inlet is at or below the level of said wafers and the outlet is preferably at or above the level of the wafers. A semiconductor fabrication system according to the invention comprises a source of gasses for forming epitaxial layers on wafers and a source of gasses for dopants in said epitaxial layers. A gas line carries the dopant and epitaxial source gasses to a reactor for growing semiconductor devices on wafers, and the source gasses in the gas line are injected into the reactor chamber through a reactor inlet. The reactor comprises an inverted susceptor mounted in a reactor chamber that is capable of rotating. One or more wafers are mounted to a surface of the susceptor, the rotation of the susceptor causing the wafers to rotate within the chamber. A heater heats the susceptor and the source gasses deposit semiconductor material on the wafers.

10. 发明授权

EP2687621B1 Vapor delivery system 有权转让
公开(公告)号：EP2687621B1
公开(公告)日：2018-09-12
申请号：EP13175988.8
申请日：2013-07-10
申请人： Ceres Technologies, Inc.
发明人： WOELK, Egbert , DiCARLO, Jr, Ronald L.
IPC分类号： C23C16/448 , C23C16/52 , C30B25/14 , C23C16/455 , C30B25/16 , C30B29/40 , B01F15/00 , B01F3/02
CPC分类号： C23C16/45512 , B01F3/028 , B01F15/00331 , C23C16/4481 , C23C16/4486 , C23C16/45561 , C23C16/52 , C30B25/14 , C30B25/165 , C30B29/40 , Y10T137/0318 , Y10T137/2509
摘要： A delivery system (100) for a liquid precursor comprising a delivery device (102) having an inlet port and an outlet port, a first proportional valve (112), a pressure/flow controller (108) and a gas composition sensor (104) disposed downstream of the delivery device (102). The omposition sensor is in communication with the first proportional valve (112) and the pressure/flow controller (108). The delivery system is operative to deliver a substantially constant number of moles of a precursor compound vapor per unit volume of a carrier gas to a plurality of reactors that are in communication with the delivery system.

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