专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP2206746B1 COMPOSITION CONTAINING POLYSILAZANE COMPOUND, WHICH CAN PROVIDE DENSE SILICEOUS FILM 有权
标题翻译：含有聚硅氧烷化合物的组合物，其可以提供密集的硅质膜
公开(公告)号：EP2206746B1
公开(公告)日：2017-08-09
申请号：EP08840790.3
申请日：2008-10-27
申请人： Merck Patent GmbH
发明人： OZAKI, Yuki
IPC分类号： C08L83/16 , C08G77/62 , C08K5/17 , C09D7/12 , C09D183/16 , H01L21/312 , H01L21/02
CPC分类号： C09D183/16 , C08K5/17 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/3125 , C08L83/16

2. 发明公开

EP3163606A1 FLASH MEMORY AND FABRICATING METHOD THEREOF 审中-公开
标题翻译： FLASH-SPEICHER UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP3163606A1
公开(公告)日：2017-05-03
申请号：EP16194585
申请日：2016-10-19
申请人： SEMICONDUCTOR MFG INT CORP (SHANGHAI) , SEMICONDUCTOR MFG INT CORP (BEIJING)
发明人： CHEN LIANG , CHIU SHENG FEN
IPC分类号： H01L21/768 , H01L27/11524
CPC分类号： H01L27/11524 , H01L21/02164 , H01L21/02208 , H01L21/02271 , H01L21/02337 , H01L21/02359 , H01L21/31116 , H01L21/764 , H01L21/7682 , H01L27/11534 , H01L28/00 , H01L29/0649 , H01L29/7883
摘要： In some embodiments, a flash memory and a fabricating method thereof is provided. The method includes proving a substrate including multiple memory transistors (101) and selecting transistors (102); forming a functional layer (13) covering outer surfaces of the memory transistors and selecting transistors, and surfaces of the substrate between adjacent memory transistors and selecting transistors; performing a surface roughening treatment to the functional layer to provide a roughed surface of the functional layer that absorbs water; and forming a dielectric layer (14) using a chemical vapor deposition (CVD) process, the absorbed water is evaporated from the functional layer during the CVD process to form an upward air flow that resists the deposition of the dielectric layer, such that air gaps (15) are formed between adjacent memory transistors, and the dielectric layer covers top surfaces of the plurality of memory transistors and selecting transistors and fills gaps between each selecting transistor and corresponding adjacent memory transistor.
摘要翻译：在一些实施例中，提供了一种闪存及其制造方法。该方法包括提供包括多个存储器晶体管（101）和选择晶体管（102）的衬底; 形成覆盖存储器晶体管的外表面并选择晶体管的功能层（13），以及相邻存储器晶体管之间的衬底表面并选择晶体管; 对功能层进行表面粗糙化处理以提供吸收水的功能层的粗糙表面; 并使用化学气相沉积（CVD）工艺形成电介质层（14），在CVD工艺期间吸收的水从功能层蒸发以形成抵抗电介质层沉积的向上气流，使得气隙（15）形成在相邻的存储器晶体管之间，并且所述电介质层覆盖所述多个存储器晶体管的顶表面并且选择晶体管并且填充每个选择晶体管与对应的相邻存储器晶体管之间的间隙。

3. 发明公开

EP2657365A3 Method for removal of carbon from an organosilicate material 有权
标题翻译：一种用于从Organosilikatmaterial去除碳的方法
公开(公告)号：EP2657365A3
公开(公告)日：2014-01-08
申请号：EP13177963.9
申请日：2009-12-08
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Wu, Aiping , Weigel, Scott Jeffrey , Braymer, Thomas Albert
IPC分类号： C23C16/56 , H01L21/316 , C23C16/40 , C23C16/30 , H01L21/02 , H01L21/3105 , B32B5/18
CPC分类号： B32B5/18 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02334 , H01L21/02337 , H01L21/02345 , H01L21/3105 , H01L21/31604 , H01L21/31695 , Y10T428/24479 , Y10T428/24496
摘要： Described herein is a method for removing at least a portion of the carbon-containing species within an organosilicate (OSG) film by treating the OSG film with a chemical, such as but not limited to an oxidizer, exposing the OSG film to an energy source comprising ultraviolet light, or treating the OSG film with a chemical and exposing the OSG film to an energy source.

4. 发明公开

EP2637203A1 METHOD FOR FORMING ISOLATION STRUCTURE 有权转让
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER ISOLATIONSSTRUKTUR
公开(公告)号：EP2637203A1
公开(公告)日：2013-09-11
申请号：EP11838049.2
申请日：2011-11-02
申请人： AZ Electronic Materials (Japan) K.K.
发明人： NAKAMOTO Naoko , SUZUKI Katsuchika , SUGAHARA Shinji , NAGAHARA Tatsuro
IPC分类号： H01L21/76 , H01L21/316 , H01L21/768 , H01L23/522
CPC分类号： H01L21/76224 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L21/02343 , H01L21/3105 , H01L29/0649
摘要： To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
摘要翻译：提供形成具有低收缩率和低拉伸应力的隔离结构的方法。 [解决方案]将含有致孔剂的第一聚硅氮烷组合物浇铸在基材的表面上以形成涂层，然后将该涂层烧成以形成折射率为1.3以下的多孔硅质膜。此后，用第二聚硅氮烷组合物浸渍多孔硅质膜的表面，然后烧成形成折射率为1.4以上的硅质膜的隔离结构。

5. 发明公开

EP2071616A4 COMPOSITION FOR FORMING SILICEOUS FILM AND PROCESS FOR PRODUCING SILICEOUS FILM FROM THE SAME 审中-公开
标题翻译：物形成的硅质膜和工艺用于生产卵石含硅薄膜THEREOF
公开(公告)号：EP2071616A4
公开(公告)日：2011-11-30
申请号：EP07806727
申请日：2007-09-05
申请人： AZ ELECTRONIC MATERIALS USA
发明人： HAYASHI MASANOBU
IPC分类号： H01L21/316 , C08G77/62 , C09D183/16 , H01L21/312 , H01L21/76
CPC分类号： C09D183/16 , C08G77/62 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L21/3125 , H01L21/31662 , H01L21/3185 , Y10T428/31663
摘要： The present invention provides a siliceous film-forming composition having such a small thickness shrinkage ratio that a highly homogeneous siliceous film can be obtained. The invention also provides a trench isolation structure-fabrication process. According to this process, trenches even having very small widths can be homogeneously filled in. The composition contains a solvent and a polysilazane compound obtained by co-ammonolysis of one or a combination of two or more halosilane compounds. The process comprises the steps of coating a surface of a silicon substrate with the above composition, and subjecting the coated substrate to heat-treatment at less than 1000°C under an oxygen atmosphere or an oxidizing atmosphere containing water vapor, so that the composition is converted into silicon dioxide in the form of a film.

6. 发明公开

EP1855313A4 PROCESS FOR PRODUCING MODIFIED POROUS SILICA FILM, MODIFIED POROUS SILICA FILM OBTAINED BY THE PROCESS, AND SEMICONDUCTOR DEVICE EMPLOYING THE MODIFIED POROUS SILICA FILM 审中-公开
标题翻译：用于生产改性的多孔硅石薄膜，通过过程GOT改性多孔质二氧化硅膜和改性的多孔硅石薄膜中使用的半导体COMPONENT
公开(公告)号：EP1855313A4
公开(公告)日：2011-09-28
申请号：EP06713744
申请日：2006-02-15
申请人： ULVAC INC , TOKYO ELECTRON LTD
发明人： FUJII NOBUTOSHI , KOHMURA KAZUO , MIYOSHI HIDENORI , TANAKA HIROFUMI , OIKE SHUNSUKE , MURAKAMI MASAMI , KUBOTA TAKESHI , KURANO YOSHITO
IPC分类号： H01L21/316 , C01B33/12 , H01L21/768 , H01L23/522
CPC分类号： H01L21/76826 , C01B33/12 , H01L21/02126 , H01L21/02203 , H01L21/02214 , H01L21/02282 , H01L21/02337 , H01L21/31608 , H01L21/31695 , Y10T428/249994

7. 发明公开

EP2197024A4 METHOD FOR PRODUCING HYDROPHOBILIZED POROUS FILM 审中-公开
标题翻译：用于生产防水剂的多孔膜
公开(公告)号：EP2197024A4
公开(公告)日：2010-09-29
申请号：EP08836263
申请日：2008-09-29
申请人： NEC ELECTRONICS CORP , ULVAC INC
发明人： CHIKAKI SHINICHI , NAKAYAMA TAKAHIRO
IPC分类号： H01L21/316 , H01L21/3105 , H01L21/312 , H01L21/768 , H01L23/522
CPC分类号： H01L21/3122 , H01L21/02126 , H01L21/02203 , H01L21/02337 , H01L21/02359 , H01L21/31058 , H01L21/31695 , H01L21/76826 , H01L23/5329 , H01L2924/0002 , H01L2924/00

8. 发明公开

EP1429376A4 METHOD AND APPARATUS FOR PROCESSING ORGANOSILOXANE FILM 审中-公开
标题翻译：方法和装置处理的有机硅氧烷
公开(公告)号：EP1429376A4
公开(公告)日：2010-02-24
申请号：EP02762905
申请日：2002-08-29
申请人： TOKYO ELECTRON LTD , JSR CORP
发明人： HISHIYA SHINGO , SANO TETSUYA , SEKIGUCHI MANABU , MITA MICHIHIRO
IPC分类号： H01L21/768 , H01L21/31 , H01L21/3105 , H01L21/312 , H01L21/316 , H01L23/522
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/31058 , H01L21/3122

9. 发明公开

EP2118175A2 CURABLE LIQUID COMPOSITION, METHOD OF COATING, INORGANIC SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：可固化液体组成，涂装工艺，无机基板及半导体装置
公开(公告)号：EP2118175A2
公开(公告)日：2009-11-18
申请号：EP08710966.6
申请日：2008-02-01
申请人： Dow Corning Toray Co., Ltd. , Dow Corning Corporation
发明人： HARIMOTO, Yukinari , ITOH, Maki , KATSOULIS, Elias, Dimitris
IPC分类号： C08G77/58 , C09D183/14 , H01L21/312
CPC分类号： H01L21/3122 , C08G77/12 , C08G77/58 , C08K3/22 , C08K3/36 , C09D183/04 , C09D183/14 , C23C18/1212 , C23C18/122 , C23C18/1241 , C23C18/1245 , C23C18/127 , C23C18/14 , H01L21/02126 , H01L21/02145 , H01L21/02153 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L31/02161 , Y10T428/31663
摘要： A curable liquid composition obtained by subjecting hydrogen halosiloxane or hydrogen alkoxysilane to condensation or to hydrolysis and condensation in an organic solvent in which fine polyvalent metal oxide particles with hydroxyl groups are dispersed; a method of forming a hard silica-type layer by applying onto an inorganic substrate the aforementioned composition and then curing the composition; an inorganic substrate with the aforementioned hard silica-type layer; and a semiconductor device comprising the aforementioned inorganic substrate on which a semiconductor layer is formed.

10. 发明公开

EP1278238A4 METHOD FOR SEALING FINE GROOVE WITH SILICEOUS MATERIAL AND SUBSTRATE HAVING SILICEOUS COATING FORMED THEREON 有权
标题翻译：方法用于密封有二氧化硅含材料和基材有二氧化硅含硅涂层肯定有微槽
公开(公告)号：EP1278238A4
公开(公告)日：2009-07-15
申请号：EP00937324
申请日：2000-06-20
申请人： AZ ELECTRONIC MATERIALS USA
发明人： SHIMIZU YASUO , TASHIRO YUUJI , AOKI TOMOKO
IPC分类号： C01B33/12 , H01L21/316 , C23C16/02 , H01L21/312 , H01L21/76 , H01L21/762 , H01L21/768
CPC分类号： C23C18/122 , C23C18/1212 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/3122 , H01L21/3125 , H01L21/76229 , H01L21/76232 , Y10T428/24273 , Y10T428/24298 , Y10T428/24942
摘要： A method for sealing a fine groove with a siliceous material, characterized as comprising applying a solution of a perhydropolysilazane having an weight average molecular weight in the range of 3,000 to 20,000 in terms of polystyrene to a substrate having at least one groove having a width of 0.2 µm or less at its most deep portion and having a ratio of the corresponding depth to the width of 2 or more, to thereby fill and seal the groove with the perhydropolysilazane, and then heating the perhydropolysilazane in an atmosphere containing water vapor to thereby convert the perhydropolysilazane to a siliceous material. The method can be employed for and sealing a fine groove homogeneously with a siliceous material.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式