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1. 发明公开

EP3271302A1 NICKEL-ALUMINUM BLOCKER FILM CONTROLLED TRANSMISSION COATING 有权
标题翻译：镍 - 铝阻隔膜控制透射涂层
公开(公告)号：EP3271302A1
公开(公告)日：2018-01-24
申请号：EP16714621.6
申请日：2016-03-07
申请人： Cardinal CG Company
发明人： MYLI, Kari B. , PFAFF, Gary L. , PLAGGEMEYER, Daniel J.
IPC分类号： C03C17/36 , E06B3/66
CPC分类号： E06B3/6612 , C01F7/02 , C03C3/087 , C03C17/36 , C03C17/3613 , C03C17/3639 , C03C17/3642 , C03C17/3644 , C03C17/366 , C03C17/3689 , C03C17/3694 , C03C2218/365 , C23C14/18 , C23C14/35 , C23C16/308 , E06B3/66 , E06B3/66314 , E06B3/6715 , E06B3/7001 , E06B3/822
摘要： The invention provides a glazing sheet and a low-emissivity coating on the glazing sheet. The low-emissivity coating comprises, in sequence moving outwardly from the glazing sheet, a layer comprising oxide film, nitride film, or oxynitride film, an infrared-reflective layer, a nickel-aluminum blocker layer, and an oxide layer. Also provided are methods of depositing such a low-emissivity coating.

2. 发明公开

EP3237943A1 OXIDATION AND MOISTURE BARRIER LAYERS FOR WIRE GRID POLARIZER 有权
标题翻译：用于钢丝网偏振器的氧化和潮湿屏障层
公开(公告)号：EP3237943A1
公开(公告)日：2017-11-01
申请号：EP16773995.2
申请日：2016-03-29
申请人： Moxtek, Inc.
发明人： WANGENSTEEN, Ted , NIELSON, Stew , LANE, Fred , LINFORD, Matt , DIWAN, Anubhav
IPC分类号： G02B5/30 , G02B5/26
CPC分类号： G02B1/14 , B05D1/60 , B05D5/08 , B05D2350/63 , C09D5/084 , C23C16/308 , C23C16/325 , C23C16/345 , C23C16/401 , C23C16/403 , C23C16/405 , C23C16/45555 , G02B1/04 , G02B5/3058
摘要： A wire grid polarizer (WGP) can have a conformal-coating to protect the WGP from oxidation and/or corrosion. The conformal-coating can include a barrier layer with at least one: of aluminum oxide, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, hafnium oxide, and zirconium oxide. A method of making a WGP can include applying the barrier layer over ribs of a WGP by vapor deposition.
摘要翻译：线栅偏振器（WGP）（10）可具有保形涂层（13）以保护WGP（10）免受氧化和/或腐蚀。共形涂层（13）可以包括具有氧化铝，氧化硅，氮化硅，氮氧化硅，碳化硅，氧化铪和氧化锆中的至少一种的阻挡层。制造WGP（10）的方法可以包括通过气相沉积在WGP（10）的肋（12）上施加阻挡层。

3. 发明授权

EP1570525B1 METHOD FOR FORMING A DIELECTRIC STACK 有权转让
标题翻译：用于生产介质叠层
公开(公告)号：EP1570525B1
公开(公告)日：2015-12-02
申请号：EP03782011.5
申请日：2003-12-09
申请人： IMEC , ASM America, Inc.
发明人： CHEN, Jerry , WILMAN, Tsai , CAYMAX, Matty , MAES, Jan-Willem
IPC分类号： H01L21/316 , H01L29/51 , H01L29/49 , H01L29/43 , H01L21/318 , H01L21/314
CPC分类号： H01L21/28194 , C23C16/0218 , C23C16/308 , C23C16/345 , C23C16/405 , C23C16/45525 , C23C16/45529 , C23C16/45531 , C23C16/45536 , C23C16/56 , H01L21/28185 , H01L21/28202 , H01L21/3141 , H01L21/3144 , H01L21/31604 , H01L21/31645 , H01L21/318 , H01L21/3185 , H01L29/513 , H01L29/517 , H01L29/518 , H01L2924/0002 , H01L2924/00

4. 发明授权

EP1967609B1 Plasma enhanced atomic layer deposition of silicon-containing films 有权
标题翻译：硅层的等离子体增强原子层蒸镀
公开(公告)号：EP1967609B1
公开(公告)日：2015-07-15
申请号：EP08151950.6
申请日：2008-02-26
申请人： Air Products and Chemicals, Inc.
发明人： Thridandam, Hareesh , Xiao, Manchao , Lei, Xinjian , Gaffney, Thomas Richard , Karwacki, Jr., Eugene Joseph
IPC分类号： C23C16/30 , C23C16/50 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/0214 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/3141 , H01L21/3144 , H01L21/3145 , H01L21/3185
摘要： The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si-H 3 , preferably of the formula (RR 1 N)SiH 3 wherein R and R 1 are selected independently from C 2 to C 10 , and a nitrogen or oxygen source, preferably ammonia or oxygen, which has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.

6. 发明公开

EP2500167A4 MOISTURE-RESISTANT FILM, METHOD FOR PRODUCING SAME, AND ORGANIC ELECTRONIC DEVICE COMPRISING THE MOISTURE-RESISTANT FILM 有权
标题翻译：防潮薄膜，工艺用于生产和有机电子器件具有防潮薄膜
公开(公告)号：EP2500167A4
公开(公告)日：2013-11-20
申请号：EP10837249
申请日：2010-12-09
申请人： SHARP KK
发明人： NIBOSHI MANABU
IPC分类号： B32B9/00 , H01L51/50 , H05B33/02
CPC分类号： C23C16/30 , C23C14/0676 , C23C16/308 , H01L51/5256 , Y10T428/12236 , Y10T428/24992
摘要： A moisture-proof film (10) includes a moisture-proof part (12) formed on a surface of a film body (11). The moisture-proof part (12) includes a first layer (11a) made of a silicon oxycarbonitride compound containing carbon atoms in a composition thereof, and a second layer (11b) made of a silicon oxynitride compound which, in a composition thereof, contains carbon atoms less than those of the first layer (11a) or does not contain carbon atoms, and having a density higher than that of the first layer (11a). The first and second layers (11a, 11b) are stacked adjoining each other. The first layer (11a) has a density increasing toward the second layer (11b).
摘要翻译：防湿膜（10）包括形成的膜体（11）的一个表面上的防潮部分（12）。防潮部分（12）包括：由氮氧化硅化合物其中，在它们的组合物，包含由硅碳氮氧化物化合物在它们的组合物包含碳原子的第一层（11A），和一第二层（11b）的碳原子少于所述第一层（11A）或不含有碳原子，以及具有密度比第一层（11a）中的更高的。所述第一层和第二层（11A，11B）被堆叠邻接海誓山盟。所述第一层（11a）中的密度朝向第二层（11B）增加。

7. 发明授权

EP2289093B1 LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS 有权
标题翻译：施用硅，薄膜低温区
公开(公告)号：EP2289093B1
公开(公告)日：2013-08-21
申请号：EP09759326.3
申请日：2009-06-03
申请人： Air Products and Chemicals, Inc. , Tokyo Electron Limited
发明人： YANG, Liu , LEI, Xinjian , HAN, Bing , XIAO, Manchao , KARWACKI, Eugene, Joseph , HASEBE, Kazuhide , MATSUNAGA, Masanobu , YONEZAWA, Masato , CHENG, Hansong
IPC分类号： H01L21/205
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3145 , H01L21/31608 , H01L21/31633 , H01L21/3185

8. 发明授权

EP1652223B1 METHODS OF FORMING DEUTERATED SILICON OXYNITRIDE-CONTAINING MATERIALS 有权
标题翻译：方法教育氘化的氮氧化硅材料含
公开(公告)号：EP1652223B1
公开(公告)日：2012-09-19
申请号：EP04777378.3
申请日：2004-06-30
申请人： Micron Technology, Inc.
发明人： WEIMER, Ronald, A. , BREINER, Lyle, D.
IPC分类号： H01L21/314 , H01L21/336 , H01L21/28 , H01L21/8242 , C23C16/30 , C23C16/34 , H01L21/318
CPC分类号： H01L21/0214 , C23C16/308 , C23C16/345 , H01L21/0217 , H01L21/022 , H01L21/02271 , H01L21/0228 , H01L21/28176 , H01L21/28194 , H01L21/3003 , H01L21/3144 , H01L21/3145 , H01L21/3185 , H01L27/10873 , H01L27/11 , H01L29/513 , H01L29/6659 , H01L29/66825
摘要： The invention includes methods of forming deuterated silicon nitride-containing materials from at least one deuterated nitrogen compound in combination with one or more silicon-containing compounds that do not contain hydrogen isotopes. Suitable deuterated nitrogen compounds can comprise, for example, NH 2 D, NHD 2 and ND 3 . Suitable silicon-containing compounds include, for example, SiCl 4 and Si 2 Cl 6 . Deuterated silicon nitride-containing materials of the present invention can be incorporated into, for example, transistor devices. The transistor devices can be utilized in DRAM cells, which in turn can be utilized in electronic systems.

9. 发明授权

EP2233491B1 METAL COMPOUND, CHEMICAL VAPOR DEPOSITION MATERIAL CONTAINING THE SAME, AND METHOD FOR PRODUCING METAL-CONTAINING THIN FILM 有权
标题翻译：金属化合物，化学气相沉积材料及其制造方法含金属薄膜
公开(公告)号：EP2233491B1
公开(公告)日：2012-07-11
申请号：EP08871220.3
申请日：2008-10-22
申请人： ADEKA CORPORATION
发明人： YAMADA, Naoki , YOSHINAKA, Atsuya , WADA, Senji
IPC分类号： C07F7/28 , C23C16/34
CPC分类号： C07F7/006 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/45553
摘要： Disclosed are a novel metal compound represented by the general formula (1) below, a chemical vapor deposition material containing the metal compound, and a method for producing a metal-containing thin film by chemical vapor deposition using the material. Among the compounds represented by the general formula (1) below, those wherein X is a chlorine atom are preferable since the raw material is highly volatile and can be obtained at low cost. When M is a titanium atom, those compounds wherein m is 1 are preferable since the difference between the volatilization temperature (vapor temperature) and the film deposition temperature (reaction temperature) is large and wide process margin can be obtained. (In the formula, M represents titanium, zirconium or hafnium; X represents a halogen atom; and m represents 1 or 2.)

10. 发明公开

EP2312650A2 Solar Cell and Method of Fabricating the Same 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：EP2312650A2
公开(公告)日：2011-04-20
申请号：EP10187420.4
申请日：2010-10-13
申请人： IPS Ltd
发明人： Park, Sang-Joon , Park, Seong-Beom , Kim, Young-Jun , Bae, Jun-Sung
IPC分类号： H01L31/18 , C23C16/455
CPC分类号： H01L31/0232 , C23C16/308 , C23C16/403 , C23C16/45551 , H01L31/022425 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell and a fabricating method thereof are provided. In the method of fabricating the solar cell, a p-type semiconductor substrate on whose light-receiving surface an antireflection coating is formed is loaded into a processing chamber. In this case, the p-type semiconductor substrate may be loaded on a substrate support of an apparatus of processing a plurality of substrates along the circumference of the substrate support, in the state where the back surface of the p-type semiconductor substrate faces upward. Then, a back surface field (BSF) layer having the characteristic of Negative Fixed Charge (NFC) is formed with AlO, AlN or ALON on the back surface of the p-type semiconductor substrate. At this time, the BSF layer may be formed by simultaneously injecting an A1 source gas, a first purge gas, an oxidizing agent gas and/or a ntiriding agent gas, and a second purge gas through injection holes of individual gas injection units while relatively rotating the substrate support with respect to the shower head. Thereafter, a back surface electrode is formed on the BSF layer such that the back surface electrode is electrically connected to the BSF layer.
摘要翻译：提供了一种太阳能电池及其制造方法。在制造太阳能电池的方法中，其上形成有抗反射涂层的光接收表面上形成的p型半导体基板被装载到处理室中。在这种情况下，在p型半导体衬底的背面朝上的状态下，p型半导体衬底可以装载在沿着衬底支撑件的圆周处理多个衬底的设备的衬底支撑件上。然后，在p型半导体衬底的背表面上用AlO，AlN或ALON形成具有负固定电荷（NFC）特性的背表面场（BSF）层。此时，BSF层可以通过同时相对注入Al源气体，第一净化气体，氧化剂气体和/或净化剂气体以及第二净化气体通过各个气体注入单元的注入孔而形成相对于喷头旋转基板支撑件。之后，在BSF层上形成背面电极，使得背面电极电连接到BSF层。

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