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1. 发明公开

EP2237313A4 ELECTRONIC MEMBER WHEREIN BARRIER-SEED LAYER IS FORMED ON BASE 有权转让
标题翻译：与电子元件上的碱形成屏障
公开(公告)号：EP2237313A4
公开(公告)日：2012-08-01
申请号：EP09721789
申请日：2009-02-19
申请人： NIPPON MINING CO
发明人： SEKIGUCHI JUNNOSUKE , IMORI TORU
IPC分类号： H01L21/768 , C23C14/14 , C25D7/12 , H01L21/3205 , H01L23/532
CPC分类号： H01L23/53238 , C23C14/185 , C25D7/123 , H01L21/2855 , H01L21/76843 , H01L21/76873 , H01L2924/0002 , H01L2924/00

2. 发明公开

EP1813696A4 ELECTROLESS GOLD PLATING SOLUTION 有权转让
标题翻译：解当前地段GILT
公开(公告)号：EP1813696A4
公开(公告)日：2011-08-24
申请号：EP05780518
申请日：2005-08-22
申请人： NIPPON MINING CO
发明人： AIBA A , KAWAMURA K , TAKAHASHI H
IPC分类号： C23C18/42 , C23C18/54
CPC分类号： C23C18/54
摘要： The invention provides a displacement electroless gold plating solution that is low in toxicity, can be used at a pH near to neutrality, and affords good solder adhesion and film adhesion. The displacement electroless gold plating solution contains a non-cyanide water-soluble gold compound and a hydrogensulfite compound. Preferably, the plating solution further contains a thiosulfuric acid compound or an aminocarboxylic acid compound. Sodium hydrogensulfite, potassium hydrogensulfite, ammonium hydrogensulfite or the like can be used as the hydrogensulfite compound.

3. 发明公开

EP1887100A4 SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME 有权转让
标题翻译：溅射及其制造方法
公开(公告)号：EP1887100A4
公开(公告)日：2010-07-21
申请号：EP06729368
申请日：2006-03-17
申请人： NIPPON MINING CO
发明人： NAKAMURA A , YAHAGI M , SATO K
IPC分类号： C23C14/34 , C04B35/453 , G11B7/254 , G11B7/257 , G11B7/26
CPC分类号： G11B7/266 , C04B35/453 , C04B35/6262 , C04B35/62645 , C04B35/62685 , C04B2235/3206 , C04B2235/3217 , C04B2235/3284 , C04B2235/3418 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/726 , C04B2235/77 , C04B2235/9653 , C23C14/3414 , G11B7/2578 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715

4. 发明公开

EP1785793A4 METHODS FOR DETERMINING AND MACHINING WORKED SURFACE OF PLATE-LIKE MATERIAL AND APPARATUS FOR THESE METHODS 有权转让
标题翻译：程序处理和板状材料的处理过的表面和设备这一过程
公开(公告)号：EP1785793A4
公开(公告)日：2010-05-05
申请号：EP05765163
申请日：2005-06-27
申请人： NIPPON MINING CO
发明人： NAKASHIMA KOICHI , KOMACHI NOBUYOSHI
IPC分类号： G05B19/404 , B23H1/00 , B23Q15/14 , B23Q15/26 , B23Q17/20 , B24B49/12 , G01B11/30
CPC分类号： G05B19/401 , B23Q15/14 , G01B11/30 , G05B19/404 , G05B2219/37049 , G05B2219/37402 , G05B2219/37596 , G05B2219/50046 , G05B2219/50063 , Y02P80/40

5. 发明公开

EP1895024A4 COPPER FOIL FOR PRINTED WIRING BOARD 审中-公开
标题翻译：铜箔印刷电路板
公开(公告)号：EP1895024A4
公开(公告)日：2009-12-23
申请号：EP06756627
申请日：2006-05-26
申请人： NIPPON MINING CO
发明人： AKASE FUMIAKI
IPC分类号： C23C28/00 , C23C22/24 , C23C22/83 , C25D7/00 , C25D11/38 , H05K1/09
CPC分类号： C23C28/00 , B32B15/08 , B32B15/14 , B32B15/20 , B32B27/04 , B32B27/38 , C23C22/00 , C23C22/24 , C23C22/83 , C23C2222/20 , C25D5/48 , C25D7/0614 , C25D11/38 , H05K3/385 , H05K3/389 , H05K2201/0355

6. 发明公开

EP1721997A4 Ni-Pt ALLOY AND TARGET COMPRISING THE ALLOY 有权转让
标题翻译： NI-PT合金和指标综合
公开(公告)号：EP1721997A4
公开(公告)日：2009-11-11
申请号：EP05709865
申请日：2005-02-08
申请人： NIPPON MINING CO
发明人： SHINDO Y
IPC分类号： C22C19/03 , B22F9/24 , C01B32/60 , C23C14/34 , C25C1/20 , H01L21/28 , H01L21/285
CPC分类号： C22C19/03 , C23C14/3414 , C25C1/20 , H01L21/28088
摘要： The present invention provides a Ni-Pt alloy superior in workability containing Pt in a content of 0.1 to 20wt% and having a Vickers hardness of 40 to 90, and a target comprising the Ni-Pt alloy. The present invention also provides a manufacturing method of Ni-Pt alloy superior in workability comprising a step of subjecting a raw material Ni having a purity of 3N level to electrochemical dissolution, a step of neutralizing the electrolytically leached solution with ammonia, a step of removing impurities through filtration with activated carbon, a step of blowing carbon dioxide into the resultant solution to form nickel carbonate and exposing the resultant product to a reducing atmosphere to prepare high purity Ni powder, a step of leaching a raw material Pt having a purity of 3N level with acid, a step of subjecting the leached solution to electrolysis to prepare high purity electrodeposited Pt, and a step of dissolving the resultant high purity Ni powder and high purity electrodeposited Pt. The foregoing method enables the rolling of the Ni-Pt alloy ingot upon reducing the hardness thereof, which results in the stable and efficient manufacture of a rolled target.

7. 发明公开

EP1724364A4 HIGH-PURITY Ru POWDER, SPUTTERING TARGET OBTAINED BY SINTERING THE SAME, THIN FILM OBTAINED BY SPUTTERING THE TARGET AND PROCESS FOR PRODUCING HIGH-PURITY RU POWDER 有权转让
标题翻译：高纯RU-粉末烧结IT拿到了溅射靶材，通过溅射薄膜，并得到处理的对象制造高纯度RU-POWDER
公开(公告)号：EP1724364A4
公开(公告)日：2009-11-04
申请号：EP05709609
申请日：2005-02-02
申请人： NIPPON MINING CO
发明人： SHINDO Y , HISANO A
IPC分类号： C22C5/04 , B22F1/00 , B22F5/00 , C23C14/34 , C25C5/02
CPC分类号： C22C5/04 , B22F1/0003 , B22F5/00 , B22F2998/10 , C23C14/3414 , C25C5/02 , Y02P10/138
摘要： A high purity Ru powder wherein the content of the respective alkali metal elements such as Na and K is 10 wtppm or less, and the content of Al is in the range of 1 to 50 wtppm. Further provided is a manufacturing method of such high purity Ru powder wherein Ru raw material having a purity of 3N (99.9%) or less is used as an anode and electrolytic refining is performed in a solution. Further still, provided is a high purity Ru powder for manufacturing a sputtering target which is capable of reducing harmful substances as much as possible, generates few particles during deposition, has a uniform film thickness distribution, has a purity of 4N (99.99%) or higher, and is suitable in forming a capacitor electrode material of a semiconductor memory; a sputtering target obtained by sintering such high purity Ru powder; a thin film obtained by sputtering this target; and a manufacturing method of the foregoing high purity Ru powder.

8. 发明公开

EP2065488A4 METHOD FOR COLLECTION OF VALUABLE METAL FROM ITO SCRAP 审中-公开
公开(公告)号：EP2065488A4
公开(公告)日：2009-09-02
申请号：EP07767699
申请日：2007-06-27
申请人： NIPPON MINING CO
发明人： SHINDO YUICHIRO , TAKEMOTO KOUICHI
IPC分类号： C25B1/00 , C22B3/44 , C22B25/06 , C25C1/14 , C25C1/22
CPC分类号： C25C1/00 , C22B3/045 , C22B3/44 , C22B7/006 , C22B25/06 , C22B58/00 , C25C1/14 , C25C1/22 , Y02P10/228 , Y02P10/234
摘要： Proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in pH-adjusted electrolyte, and collecting indium or tin as oxides. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in an electrolytic bath partitioned with a diaphragm or an ion-exchange membrane to precipitate hydroxide of tin, thereafter extracting anolyte temporarily, and precipitating and collecting indium contained in the anolyte as hydroxide. With the methods for collecting valuable metal from an ITO scrap described above, indium or tin may be collected as oxides by roasting the precipitate containing indium or tin. Consequently, provided is a method for efficiently collecting indium from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.

9. 发明公开

EP1646078A4 EPITAXIAL GROWTH PROCESS 审中-公开
标题翻译：外延生长工艺
公开(公告)号：EP1646078A4
公开(公告)日：2009-09-02
申请号：EP04730022
申请日：2004-04-28
申请人： NIPPON MINING CO
发明人： TAKAKUSAKI MISAO , KANAI SUSUMU
IPC分类号： H01L21/203 , C30B23/02 , C30B29/40
CPC分类号： C30B29/40 , C30B23/02 , H01L21/02392 , H01L21/02463 , H01L21/02543 , H01L21/02631
摘要： A epitaxial growth process for forming a semiconductor thin film having a heterojunction of a III-V compound semiconductor by a molecular beam epitaxial growth process comprises a first step for forming a first compound semiconductor layer through irradiation with a molecular beam of at least one kind of group III elements and a molecular beam of a first group V element, a second step for stopping irradiation with the molecular beam of group III elements and the molecular beam of the first group V element and interrupting the growth until the supply of the first group V element becomes one tenth or less of the supply in the first step, and a third step for forming a second compound semiconductor layer different from the first compound semiconductor on the first compound semiconductor layer through irradiation with a molecular beam of at least one kind of group III elements and a molecular beam of a second group V element.

10. 发明公开

EP1574602A4 PROCESS FOR PRODUCING SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR AND CRYSTAL GROWING APPARATUS 有权转让
标题翻译：制备化合物半导体单晶和拉晶设备
公开(公告)号：EP1574602A4
公开(公告)日：2009-07-08
申请号：EP03748696
申请日：2003-10-03
申请人： NIPPON MINING CO
发明人： ASAHI TOSHIAKI , SATO KENJI , YABE TAKAYUKI , ARAKAWA ATSUTOSHI
IPC分类号： C30B15/12 , C30B15/00 , C30B27/02 , C30B29/48
CPC分类号： C30B27/02 , C30B15/12 , C30B29/48 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A process for producing a single crystal of compound semiconductor; and a crystal growing apparatus therefor. In particular, a process for producing a single crystal of compound semiconductor, for example, ZnTe compound semiconductor according to the liquid-enclosed Czochralski (LEC) process; and a crystal growing apparatus therefor. More specifically, a process for producing a single crystal of compound semiconductor with the use of a crystal growing apparatus of double crucible structure according to the LEC process, wherein a second crucible is covered with a lid of plate-shaped member provided with a pass-through slot, the pass-through slot enabling introduction of a crystal lifting shaft having a seed crystal holding part at its distal end in the second crucible, so that crystal growth is effected in such conditions that the atmosphere within the second crucible is substantially unchanged (semisealed conditions). Thus, in the crystal growth according to the LEC process, a single crystal of high quality wherein the ratio of crystal defects is low can be produced.

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