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1. 发明公开

EP1645658A4 ELECTROLESS GOLD PLATING SOLUTION 审中-公开
标题翻译：解决当前的射门问题
公开(公告)号：EP1645658A4
公开(公告)日：2011-08-03
申请号：EP04712169
申请日：2004-02-18
申请人： NIPPON MINING CO
发明人： AIBA AKIHIRO , HISUMI YOSHIYUKI , KAWAMURA KAZUMI
IPC分类号： C23C18/42 , C23C18/16
CPC分类号： C23C18/42 , C23C18/54

2. 发明公开

EP2241649A4 YTTERBIUM SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE TARGET 有权转让
标题翻译：用于生产目标镱溅射靶材及方法
公开(公告)号：EP2241649A4
公开(公告)日：2011-02-02
申请号：EP09707362
申请日：2009-02-05
申请人： NIPPON MINING CO
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C22F1/00 , C22F1/02 , C22F1/16

3. 发明公开

EP1715077A4 COPPER OR COPPER ALLOY TARGET/COPPER ALLOY BACKING PLATE ASSEMBLY 审中-公开
标题翻译：安排的或铜合金靶材及铜铜合金载板
公开(公告)号：EP1715077A4
公开(公告)日：2010-09-29
申请号：EP04820879
申请日：2004-11-30
申请人： NIPPON MINING CO
发明人： OKABE TAKEO , MIYASHITA HIROHITO
IPC分类号： C23C14/34 , C22C9/00 , C22C9/06 , H01J37/34
CPC分类号： H01J37/3435 , C22C9/06 , C22C9/10 , C22C25/00 , C23C14/3414

4. 发明公开

EP2039797A4 SPUTTERING TARGET/BACKING PLATE CONJUNCTION ELEMENT 有权转让
标题翻译：溅射靶材/花粉过滤器连接元件
公开(公告)号：EP2039797A4
公开(公告)日：2010-04-28
申请号：EP07742794
申请日：2007-05-02
申请人： NIPPON MINING CO
发明人： ODA KUNIHIRO , FUKUSHIMA ATSUSHI
IPC分类号： C23C14/34 , H01L21/285
CPC分类号： C23C14/3407

5. 发明公开

EP1930451A4 HIGH-PURITY HAFNIUM, TARGET AND THIN FILM COMPRISING HIGH-PURITY HAFNIUM, AND PROCESS FOR PRODUCING HIGH-PURITY HAFNIUM 有权转让
标题翻译：高纯铪，TARGET和高纯度铪综合薄膜法生产高纯度铪
公开(公告)号：EP1930451A4
公开(公告)日：2009-08-19
申请号：EP06766584
申请日：2006-06-12
申请人： NIPPON MINING CO
发明人： SHINDO YUICHIRO
IPC分类号： C22B34/14 , B22D27/02 , C22B9/22 , C22C28/00 , C23C14/16 , C23C14/34
CPC分类号： C22B34/14 , B22D27/02 , C22B9/228 , C22B34/1295 , C22C27/00 , C22C28/00 , C23C14/165 , C23C14/3414 , H01L21/28079 , H01L21/28194 , H01L29/495 , H01L29/517
摘要： [PROBLEMS] To provide: a process for producing high-purity hafnium from a hafnium sponge reduced in zirconium content as a raw material, the high-purity hafnium being reduced in the contents of Fe, Cr, and Ni impurities, contents of Ca, Na, and K impurities, contents of Al, Co, Cu, Ti, W, and Zn impurities, a-ray count, contents of U and Th impurities, contents of Pb and Bi impurities, and content of carbon as a gasifiable matter; an efficient and stable production technique; a high-purity hafnium material obtained by the technique; and a sputtering target and a gate insulator or thin film for metal gate use which each comprises the material. [MEANS FOR SOLVING PROBLEMS] The high-purity hafnium is characterized in that the purity of the hafnium excluding Zr and the gasifiable matter is 6N or higher and that the contents of Fe, Cr, and Ni each is 0.2 ppm or lower, the contents of Ca, Na, and K each is 0.1 ppm or lower, and the contents of Al, Co, Cu, Ti, W, and Zn each is 0.1 ppm or lower.

6. 发明公开

EP2003226A4 SINTERED SPUTTERING TARGET MADE OF HIGH-MELTING METALS 有权转让
标题翻译：难熔金属的烧结体溅射靶
公开(公告)号：EP2003226A4
公开(公告)日：2009-04-01
申请号：EP07714782
申请日：2007-02-22
申请人： NIPPON MINING CO
发明人： SUZUKI RYO
IPC分类号： C23C14/34 , C22C1/04 , C22C5/04 , C22C27/00 , C22C27/02 , C22C27/04
CPC分类号： C23C14/3414 , C22C1/0466 , C22C5/04 , C22C27/00 , C22C27/02 , C22C27/04 , C22C30/00

7. 发明公开

EP1277703A4 MANUFACTURING METHOD OF ITO POWDER WITH THIN DISSOLVED IN INDIUM OXIDE, AND MANUFACTURING METHOD OF ITO TARGET 有权
标题翻译：方法ZUR HERSTELLUNG VON ITO-PULVER麻省理工学院铟氧化物VERFAHREN ZUR HERSTELLUNG EINES ITO-TARGETS
公开(公告)号：EP1277703A4
公开(公告)日：2009-01-28
申请号：EP01994969
申请日：2001-12-19
申请人： NIPPON MINING CO
发明人： YANAI YOSHIRO , NAKAMURA ATSUSHI
IPC分类号： C01G19/00
CPC分类号： C01G19/00 , C01P2002/54 , C01P2002/72 , C01P2004/03 , C01P2004/61 , C01P2004/62 , C01P2006/10 , C01P2006/12
摘要： A method for producing a powder of ITO having indium oxide and tin dissolved therein, characterized in that a mixed solution or slurry of indium nitrate and tin chloride having concentrations of indium and tin of 3.0 mol/L or more is subjected to the spray pyrolysis to thereby form an ITO powder. The method allows the production, at a lower cost, of an ITO powder having tin dissolved in indium oxide and being excellent in dispersibility and of an ITO target being close and excellent in homogeneity, which results in the suppression of the lowering of quality and the formation of abnormal projections such as nodules both of which are frequently caused when uniform film formation by ITO sputtering is not achieved.
摘要翻译：一种生产其中溶解有氧化铟和锡的ITO粉末的方法，其特征在于将铟和锡浓度为3.0mol / L或更高的硝酸铟和氯化锡的混合溶液或浆料喷雾热解为从而形成ITO粉末。该方法允许以较低的成本生产具有溶解在氧化铟中的锡并具有优异的分散性并且ITO靶材紧密且均匀性优异的ITO粉末，这导致抑制质量降低和当不能实现通过ITO溅射的均匀膜形成时经常引起诸如结节的异常突起的形成。

8. 发明公开

EP1547974A4 IRON SILICIDE POWDER AND METHOD FOR PRODUCTION THEREOF 有权
标题翻译： EISENSILICIDPULVER及其制造方法
公开(公告)号：EP1547974A4
公开(公告)日：2008-11-12
申请号：EP03795272
申请日：2003-09-01
申请人： NIPPON MINING CO
发明人： ODA K , SUZUKI R
IPC分类号： B22F1/00 , B22F9/22 , C01B33/06 , C22C38/00 , C23C14/34 , B22F9/04
CPC分类号： C01B33/06 , C23C14/3414
摘要： Provided is iron silicide powder in which the content of oxygen as the gas component is 1500ppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

9. 发明公开

EP1892315A4 RUTHENIUM-ALLOY SPUTTERING TARGET 有权转让
标题翻译： SPUTTERTARGET AUS RUTHENIUMLEGIERUNG
公开(公告)号：EP1892315A4
公开(公告)日：2008-07-23
申请号：EP06746412
申请日：2006-05-16
申请人： NIPPON MINING CO
发明人： ODA KUNIHIRO
IPC分类号： C23C14/34 , B22F3/00 , H01L21/285
CPC分类号： C23C14/3414 , B22F3/10 , C22C5/04
摘要： Provided is a ruthenium alloy sputtering target as a ruthenium alloy sintered compact target obtained by sintering mixed powder of ruthenium powder and metal powder capable of creating oxides easier than ruthenium, wherein purity of the target excluding gas components is 99.95wt% or higher, said target contains 5at% to 60at% of metal capable of creating oxides easier than ruthenium, relative density is 99% or higher, and oxygen content as impurities is 1000ppm or less. This ruthenium alloy sputtering target is capable of reducing its oxygen content, reducing the generation of arcing and particles during sputtering, increasing the target strength by improving the sintered density, and improving the deposition quality by strictly restricting the amount of B and P impurities in the target in order to prevent the compositional variability of B and P added in minute amounts to the Si semiconductor.
摘要翻译：一种钌合金溅射靶，其是通过烧结钌粉末和具有比钌更高的氧化能力的金属粉末的粉末混合物而获得的钌合金烧结靶。其特征在于，排除所有气体成分的靶具有99.95重量％或更高的纯度，更易形成氧化物的金属含量为5-60原子％，相对密度为99 ％或更高，并且作为杂质的氧含量为1,000ppm或更低。由于钌合金溅射靶中的氧含量降低，所以溅射期间的电弧或颗粒产生受到抑制。由于烧结密度提高，目标的强度提高。为了防止微量添加到硅半导体中的有关硼和磷的成分波动，严格限制靶中硼和磷杂质的量。因此，钌合金溅射靶可以提供质量提高的沉积物。

10. 发明公开

EP1873267A4 COPPER ALLOY FOR ELECTRONIC MATERIAL 有权转让
标题翻译：铜合金用于电子材料
公开(公告)号：EP1873267A4
公开(公告)日：2008-07-23
申请号：EP06729790
申请日：2006-03-23
申请人： NIPPON MINING CO
发明人： ERA NAOHIKO , FUKAMACHI KAZUHIKO , KUWAGAKI HIROSHI
IPC分类号： C22C9/06 , C22F1/00 , C22F1/08
CPC分类号： C22C9/06 , C22F1/00 , C22F1/08 , H01R13/03
摘要： Disclosed is a Co-containing Cu-Ni-Si alloy for electronic materials which is excellent in strength and electrical conductivity. Specifically disclosed is a copper alloy for electronic materials which is composed of about 0.5-2.5% by mass of Ni, about 0.5-2.5% by mass of Co, about 0.30-1.2% by mass of Si and the balance of Cu and unavoidable impurities. The mass concentration of the total mass of Ni and Co relative to Si ([Ni + Co]/Si ratio) is about 4 = [Ni + Co]/Si = about 5, and the mass concentration ratio between Ni and Co (Ni/Co ratio) is about 0.5 = Ni/Co = about 2.

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