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1. 发明公开

EP3317895A1 VERFAHREN ZUM ABTASTEN EINES MIT EINEM PLASMAPROZESS IN BEZIEHUNG STEHENDEN SIGNALGEMISCHS 审中-公开
标题翻译：用于处理与等离子体处理相关的信号混合的方法
公开(公告)号：EP3317895A1
公开(公告)日：2018-05-09
申请号：EP16740970.5
申请日：2016-06-30
申请人： TRUMPF Hüttinger GmbH + Co. KG
发明人： BOCK, Christian , GREDE, André , SCHWERG, Nikolai
IPC分类号： H01J37/32 , H03M1/08
CPC分类号： H01J37/32926 , G01R23/167 , H01J37/32 , H01J37/32082 , H01J37/32917 , H05H1/0006
摘要： The invention relates to a method for scanning a composite signal relating to a plasma process, wherein the composite signal has at least one plasma signal (1-3) that is of interest and superimposed by at least one interfering signal (7, 7c, 20, 22, 23, 24), said method comprising the following method steps: a. identifying the at least one interfering signal (7, 7c, 20, 22, 23, 24); b. digitalising the composite signal, wherein the composite signal is scanned with a scanning frequency (fS); c. varying the scanning frequency (fS) during the operation of the plasma process according to the frequency of the plasma signal (1-3) of interest and/or the frequency of the at least one interfering signal (7, 7c, 20, 22, 23, 24).

2. 发明授权

EP2526743B1 PROCESS CONDITION SENSING DEVICE FOR PLASMA CHAMBER 有权
标题翻译：设备技术检测工艺条件等离子体室
公开(公告)号：EP2526743B1
公开(公告)日：2016-12-07
申请号：EP11735001.7
申请日：2011-01-11
申请人： KLA-Tencor Corporation
发明人： JENSEN, Earl , SUN, Mei
IPC分类号： H05H1/46 , G01N27/60 , H01L21/205 , H01J37/32 , C23C16/52 , C23C14/54 , G01N27/62 , G01R19/00
CPC分类号： H01J37/32954 , G01R19/0061 , H01J37/32 , H01J37/32917 , H01J37/32935 , H01L21/67069 , H01L21/67253 , H01L22/34
摘要： A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

3. 发明公开

EP2526743A4 PROCESS CONDITION SENSING DEVICE FOR PLASMA CHAMBER 有权
标题翻译：设备技术检测工艺条件等离子体室
公开(公告)号：EP2526743A4
公开(公告)日：2015-05-06
申请号：EP11735001
申请日：2011-01-11
申请人： KLA TENCOR CORP
发明人： JENSEN EARL , SUN MEI
IPC分类号： H05H1/46 , C23C14/54 , C23C16/52 , G01N27/60 , G01N27/62 , G01R19/00 , H01J37/32 , H01L21/205
CPC分类号： H01J37/32954 , G01R19/0061 , H01J37/32 , H01J37/32917 , H01J37/32935 , H01L21/67069 , H01L21/67253 , H01L22/34
摘要： A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

4. 发明公开

EP2820670A1 METHODS AND APPARATUS FOR DEPOSITING AND/OR ETCHING MATERIAL ON A SUBSTRATE 有权
标题翻译：在基底间距和/或蚀刻材料的方法
公开(公告)号：EP2820670A1
公开(公告)日：2015-01-07
申请号：EP13709983.4
申请日：2013-02-27
申请人： Oxford Instruments Nanotechnology Tools Limited
发明人： MCNIE, Mark Edward , COOKE, Michael Joseph , LEA, LeslieMichael
IPC分类号： H01L21/3213 , H01L21/3065
CPC分类号： H01J37/32926 , C23C16/50 , C23C16/52 , G05B19/418 , G05B2219/34198 , H01J37/32449 , H01J37/32816 , H01J37/32834 , H01J37/32917 , H01J2237/24564 , H01J2237/24585 , H01J2237/248 , H01J2237/3321 , H01J2237/334 , H01L21/306 , H01L21/30655 , H01L22/12 , H01L22/26
摘要： Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (T
gr ) of the processing chamber for the step.
摘要翻译：方法是游离缺失盘用于在具有处理室，控制器和用于在所述腔室内调整工艺参数的一个或多个设备的加工工具从一个表面基底材料沉积到和/或蚀刻材料。该方法包括：所述控制器指示雅丁所述一个或多个设备的一系列控制步骤，每个控制步骤指定定义的一组工艺参数并在一个或多个装置被指示执行时，控制中的至少worin一个步骤包括所述控制器指示所述一个或多个设备来实现一组定义为步骤的持续时间持续不断的过程参数，包括至少一个腔室压力和气体通过腔室，其中持续时间小于相应的气体停留时间的流量（TGR ）为所述步骤中的处理室的。

5. 发明公开

EP2806714A2 Remote plasma system having self management function and self management method of the same 审中-公开
标题翻译：远程等离子体系统（Selbstverwaltungsfunktion und Selbstverwaltungsverfahrendafür
公开(公告)号：EP2806714A2
公开(公告)日：2014-11-26
申请号：EP13182154.8
申请日：2013-08-29
申请人： Choi Dae, Kyu
发明人： Choi Dae, Kyu
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32935 , H01J37/32357 , H01J37/32917 , H01J37/3299 , H05H1/46 , H05H2001/463
摘要： A remote plasma system having a self management function of the present invention measures an operating state of a remote plasma generator while a remote plasma generator operates, which generates plasma and remotely supplies the generated plasma to a process chamber, thereby allowing a process manager to check the measured operating state and performing a required process control depending on an operating state. According to the remote plasma system having the self management function of the present invention, it is possible to check operating state information of the remote plasma generator in real time so as to judge whether the remote plasma generator normally operates and immediately sense occurrence of an error during the operation. Further, it is possible to check in real time the operating state information of the remote plasma generator and plasma treatment process progress state information in the process chamber while the plasma generated from the remote plasma generator is supplied to the process chamber. Therefore, a process manager can determine an operating state of the remote plasma system in real time and immediately cope with an abnormal operation when the abnormal operation occurs. Further, the process manager can determine the system in real time at the time when maintenance of the system is required, thereby increasing maintenance efficiency.
摘要翻译：具有本发明的自我管理功能的远程等离子体系统在远程等离子体发生器操作时测量远程等离子体发生器的操作状态，其产生等离子体并且将生成的等离子体远程供应到处理室，从而允许过程管理器检查测量的操作状态，并根据操作状态执行所需的过程控制。根据具有本发明的自我管理功能的远程等离子体系统，可以实时地检查远程等离子体发生器的运行状态信息，以便判断远程等离子体发生器是否正常工作并且立即感测出错误的发生在操作期间。此外，当从远程等离子体发生器产生的等离子体被提供给处理室时，可以实时检查远程等离子体发生器的操作状态信息和等离子体处理过程在处理室中的进行状态信息。因此，过程管理器可以实时地确定远程等离子体系统的操作状态，并且在发生异常操作时立即应对异常操作。此外，过程管理器可以在需要系统的维护时实时地确定系统，从而提高维护效率。

6. 发明公开

EP2562784A2 Sensoranordnung zur Charakterisierung von Plasmabeschichtungs-, Plasmaätz- und Plasmabehandlungsprozessen sowie Verfahren zur Ermittlung von Kenngrößen in diesen Prozessen 有权
标题翻译：用于参数在这些过程中的确定等离子喷涂，等离子蚀刻和等离子处理过程和程序的表征传感器布置
公开(公告)号：EP2562784A2
公开(公告)日：2013-02-27
申请号：EP12005982.9
申请日：2012-08-22
申请人： Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
发明人： Ellmer, Klaus , Harbauer, Karsten
IPC分类号： H01J37/32
CPC分类号： H01J37/32935 , G01B7/066 , H01J37/32917 , H05H1/0075
摘要： Bei der beanspruchten Sensoranordnung ist die dem Plasmaätz-, Plasmabeschichtungs- oder Plasmabehandlungsprozess ausgesetzte Frontelektrode (2) des Schwingquarzes (1) isoliert gegen das Gehäuse (5) der Anordnung und als planare Langmuir-Sonde ausgebildet und mit einem außerhalb der Plasmaanlage angeordneten Strom-Spannungs-Kennlinien-Messgerät (14) zur Messung der Langmuir-Kennlinie (I L (U)) verbunden, gegenüber der Rückelektrode (3) des Schwingquarzes (1) ist ein pyrometrischer Sensor (4) zur Messung der mittleren Temperatur (T Q ) der Rückelektrode (3) des Schwingquarzes (1) angeordnet und der Schwingquarz (1) mit seiner als planare Langmuir-Sonde ausgebildeten Frontelektrode (2) und der pyrometrische Sensor (4) bilden einen Kombinationssensor (10), der in einem Sensorgehäuse (5) angeordnet ist, das eine der Frontelektrode (2) des Schwingquarzes (1) gegenüber liegende Öffnung aufweist, außerhalb des Sensorgehäuses (5) zwischen dessen Öffnung und der Plasmaquelle in der Plasmaanlage eine schwenkbare Abschirmblende (9) angeordnet ist, der Kombinationssensor (10) verfahrbar ausgebildet und mit Mess-(12, 13, 14) und Auswerteeinheiten und diese mit einem Rechner (15) zur Datenaufnahme, -auswertung und -darstellung verbunden sind, wobei der Schwingquarz (1) mit einer Messeinheit (13) für die Bestimmung der Schwingquarzfrequenz (f Q ) und die planare Langmuir-Sonde (14) mit einer Messeinheit für die Messung ihrer Strom-Spannungs-Kennlinie (I L (U)) und der pyrometrische Sensor (4) mit einem Messverstärker (12) verbunden ist, und der Rechner (15) mittels eines Messprogramms aus diesen Messgrößen die Abscheide - bzw. Ätzrate (R(t)), die Plasmadichte (n e bzw. n i ), die Elektronentemperatur (T e ) und den totalen Energieeintrag (E ein ) der Plasmaprozesse ermittelt.
摘要翻译：一种用于在等离子体系统表征等离子体涂层 - 和等离子体蚀刻的传感器装置，包括：至少一个石英晶体（1）与前电极（2）和背面电极（3），其中，所述水晶的正面电极暴露于等离子体蚀刻或等离子体涂层，是绝缘的相对于壳体（5）的布置的，并且形成为平坦的朗缪尔探针; 用于测量所述背面电极的平均温度的测温传感器（4）; 和枢轴能够筛选隔膜布置在所述等离子体单元的开口与等离子体源之间的传感器壳体的外部。一种用于在等离子体系统表征等离子体涂层 - 和等离子体蚀刻的传感器装置，包括：至少一个石英晶体（1）与前电极（2）和背面电极（3），其中，所述水晶的正面电极暴露于等离子体蚀刻或等离子体涂层，是绝缘的相对于壳体（5）的装置的，并形成为平面朗缪尔探针，并与等离子体系统外的安排下，用于测量所述朗缪尔特性的电流 - 电压特性曲线的测量装置相连接曲线; 一个测温传感器（4）设置成相对于背面电极，用于测量所述背面电极的平均温度，并用它的前电极的石英形成为平坦的朗缪尔探针和所述测温传感器，形成一个组合的传感器，所有这一切都被布置在传感器壳体，并具有开口以相对置到前电极; 和枢轴能够筛选隔膜布置在所述等离子体单元的开口与等离子体源之间的传感器壳体的外部。组合传感器是可移动的，并且具有测量 - 和评估单元，其被连接到用于数据采集， - 分析和-display的计算机。与水晶的确定性采矿频率的测量单元和所述平面朗缪尔探针的石英与测量单元连接的用于测量其电流电压特性曲线，以及测温传感器与测量放大器相连。计算机确定性地雷沉积或蚀刻速率，和等离子体密度，电子温度和等离子体工艺的总能量输入，使用测量程序从所测量的量。因此独立claimsoft包括用于确定性采矿在等离子体系统中的等离子体涂层和等离子体蚀刻的特点，用于生产薄的层，其包含（i）同时测量（a）所述的石英晶体的共振频率，（b）该IU特性平面朗缪尔探针，和（c）的后电极的在与毫秒的时间分辨率，以秒的等离子体腔室中的传感器组合的位置处的平均温度，（ii）所述测量数据传送给计算机进行数据的曲线采集， - 分析和-display，和（iii）确定的采矿等离子体涂覆或等离子体蚀刻,:的参数，如由手段层厚度或沉积或蚀刻速率，等离子体密度，电子温度和能量输入从反式mitted数据计算机程序，其中，石英晶体和朗缪尔探针的几何尺寸的层厚度，或沉积或蚀刻速率，等离子体密度和e的确定期间被认为是 Lectron温度和能量输入校准因子总能量流入的确定期间考虑。

7. 发明公开

EP4445405A1 SCANNING RADICAL SENSOR USABLE FOR MODEL TRAINING 审中-实审
公开(公告)号：EP4445405A1
公开(公告)日：2024-10-16
申请号：EP22904887.1
申请日：2022-11-08
申请人： Applied Materials Inc;
发明人： MOFFATT, Stephen , HILKENE, Martin
IPC分类号： H01J37/32
CPC分类号： H01J37/32963 , H01J37/32926 , H01L21/67253 , H01J37/32935 , H01J37/32972 , H01J37/32917 , H01J37/3299 , H01J37/32449 , G06F30/20

8. 发明公开

EP3291280A1 A METHOD AND SYSTEM OF MONITORING AND CONTROLLING DEFORMATION OF A WAFER SUBSTRATE 有权
标题翻译：一种监测和控制晶片基体变形的方法和系统
公开(公告)号：EP3291280A1
公开(公告)日：2018-03-07
申请号：EP17275133.1
申请日：2017-09-01
申请人： SPTS Technologies Limited
发明人： ASHRAF, Huma , RIDDELL, Kevin , MUMFORD, Roland , BALDWIN, Grant
IPC分类号： H01J37/32 , H01L21/67
CPC分类号： H01J37/32935 , H01J37/32082 , H01J37/32715 , H01J37/32724 , H01J37/32917 , H01J2237/334 , H01L21/67069 , H01L21/67288
摘要： A method and system are disclosed for monitoring and controlling deformation of a wafer substrate during a plasma etching of the wafer substrate. The method comprises the steps of:
- disposing a wafer substrate on a platen assembly within a process chamber so that an entire upper surface of the wafer is exposed;
- passing a process gas into the process chamber;
- applying a radio frequency bias voltage to the platen assembly
- generating a plasma within the process chamber;
- monitoring a voltage difference between the platen assembly and the process chamber, during the etch process;
- attenuating or extinguishing the plasma to prevent further etching once a threshold monitored voltage is reached.
摘要翻译：公开了一种用于在晶片衬底的等离子体蚀刻期间监测和控制晶片衬底的变形的方法和系统。该方法包括以下步骤：将晶片衬底设置在处理室内的台板组件上，使得晶片的整个上表面暴露; - 将处理气体传送到处理室中; - 向台板组件施加射频偏置电压 - 在处理室内产生等离子体; - 在蚀刻工艺期间监测压板组件和处理室之间的电压差; - 一旦达到阈值监测电压，衰减或熄灭等离子体以防止进一步蚀刻。

9. 发明授权

EP2717292B1 MASS SPECTROMETRY DEVICE 有权转让
标题翻译：质谱分析装置
公开(公告)号：EP2717292B1
公开(公告)日：2018-03-07
申请号：EP12791957.9
申请日：2012-04-09
申请人： Hitachi High-Technologies Corporation
发明人： SAMPEI, Makoto
IPC分类号： H01J49/06 , H01J49/10 , H01J37/32
CPC分类号： H01J49/02 , G01N27/624 , H01J37/32862 , H01J37/32917 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J49/067
摘要： When a specimen from a specimen ionizing unit (ion source) is introduced, the specimen, if not sufficiently ionized, is caused to remain in sites other than a pore in an introducing section and then deposited as a product such as an oxide or carbide by an energy such as heat. The deposited deposit causes a deterioration in the performance of the mass spectrometry device. The present invention has a specimen supply source, a specimen ionizing section for ionizing a specimen supplied from the specimen supply source, a specimen-introduction regulating chamber into which ions of the ionized specimen are introduced, a differential evacuation chamber located at the downstream side of the specimen-introduction regulating chamber, and an analyzing section located at the downstream side of the differential evacuation chamber, in which a discharge generating means is formed for generating an electric discharge inside at least one of the specimen-introduction regulating chamber and the differential evacuation chamber. The discharge generating means has a specimen introducing section electrode and a first-pore-section-forming member (electrode) located oppositely to each other inside the specimen-introduction regulating chamber, or a first-pore-section-forming member (electrode) and a second-pore-section-forming member (electrode) located oppositely to each other inside the differential evacuation chamber.

10. 发明公开

EP2929760A4 FREQUENCY TUNING SYSTEM AND METHOD FOR FINDING A GLOBAL OPTIMUM 有权转让
标题翻译：频率调谐系统和方法用于确定全球最佳
公开(公告)号：EP2929760A4
公开(公告)日：2016-09-07
申请号：EP13861483
申请日：2013-12-03
申请人： ADVANCED ENERGY IND INC
发明人： VAN ZYL GIDEON
IPC分类号： H05H1/46 , G04F5/14 , H01J37/32 , H03B5/04 , H03J5/00 , H03L7/26
CPC分类号： H01J37/32155 , G04F5/14 , H01J37/32082 , H01J37/32183 , H01J37/32917 , H01J37/3299 , H03F1/56 , H03F3/189 , H03F3/24 , H03F2200/451 , H03L1/00 , H03L7/26 , H05H2001/4682
摘要： A generator and method for tuning the generator are disclosed. The method includes setting the frequency of power applied by the generator to a current best frequency and sensing a characteristic of the power applied by the generator. A current best error based upon the characteristic of the power is determined, and the frequency of the power at the current best frequency is maintained for a main-time-period. The frequency of the power is then changed to a probe frequency and maintained at the probe frequency for a probe-time-period, which is less than the main-time-period. The current best frequency is set to the probe frequency if the error at the probe frequency is less than the error at the current best frequency.

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