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    • 8. 发明公开
    • PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
    • 等离子电视机
    • EP3032925A4
    • 2017-03-22
    • EP14834309
    • 2014-07-03
    • TOKYO ELECTRON LTD
    • MARUYAMA KOJIHORIGUCHI MASATOMATSUKI TETSURIKOSHIISHI AKIRA
    • H05H1/46H01J37/32H01L21/3065
    • H01J37/32165H01J37/32091H01J37/32357H01J37/32422H01J37/3244H01J37/32532H01J37/32568H01J37/32816H01J2237/332H01J2237/334H01L21/02104H01L21/3065H01L21/67069
    • A plasma processing apparatus includes a dielectric member having communication holes through which an internal space communicates with a processing space; a first electrode and a second electrode arranged to face each other with the internal space therebetween; a first gas supply device which supplies a first processing gas into the internal space; a first high frequency power supply which supplies a first high frequency power to at least one of the first electrode and the second electrode to generate a first plasma of the first processing gas; a depressurizing device which introduces the first processing gas and radicals in the first plasma into the processing space; a second high frequency power supply which supplies a second high frequency power to generate a second plasma of the first processing gas and to attract ions into a target object; and a control unit which adjusts, by controlling a total amount of the first high frequency powers, an amount of the radicals in the second plasma and adjusts, by controlling a ratio between the first high frequency powers, an amount of the ions in the second plasma.
    • 等离子体处理装置包括具有连通孔的电介质构件,内部空间与处理空间连通; 第一电极和第二电极,被布置成彼此面对并具有内部空间; 第一气体供给装置,其将第一处理气体供给到所述内部空间; 第一高频电源,其向第一电极和第二电极中的至少一个提供第一高频电力,以产生第一处理气体的第一等离子体; 将第一等离子体中的第一处理气体和自由基引入处理空间的减压装置; 提供第二高频电力以产生所述第一处理气体的第二等离子体并将离子吸引到目标物体中的第二高频电源; 以及控制单元,其通过控制第一高频功率的总量来调整第二等离子体中的自由基的量,并且通过控制第一高频功率之间的比例来调整第二高频功率中的离子的量 等离子体。