基本信息:
- 专利标题： PROCESS CONDITION SENSING DEVICE FOR PLASMA CHAMBER
- 专利标题（中）：设备技术检测工艺条件等离子体室
- 申请号：EP11735001 申请日：2011-01-11
- 公开(公告)号：EP2526743A4 公开(公告)日：2015-05-06
- 发明人： JENSEN EARL , SUN MEI
- 申请人： KLA TENCOR CORP
- 专利权人： KLA TENCOR CORP
- 当前专利权人： KLA TENCOR CORP
- 优先权： US69169510 2010-01-21
- 主分类号： H05H1/46
- IPC分类号： H05H1/46 ; C23C14/54 ; C23C16/52 ; G01N27/60 ; G01N27/62 ; G01R19/00 ; H01J37/32 ; H01L21/205
摘要：
A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).