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    • 2. 发明公开
    • BALANCED BARRIER DISCHARGE NEUTRALIZATION IN VARIABLE PRESSURE ENVIRONMENTS
    • 变压力环境下的平衡障碍排放中性化
    • EP3219176A1
    • 2017-09-20
    • EP15790722.1
    • 2015-10-13
    • Illinois Tool Works Inc.
    • GEFTER, PeterOLDYNSKI, Edward AnthonyHEYMANN, Steven Bernard
    • H05H1/24H01J37/32H01T23/00H05F3/06
    • H05F1/00H01J37/32082H01J37/32348H01J37/3277H01J37/32935H01T23/00H05F3/06H05H1/2406H05H2001/2468
    • Methods and apparatus for static charge neutralization in variable pressure environments are disclosed. In particular, barrier discharge ionization apparatus may include a hollow dielectric channel disposed within a variable pressure environment and may have at least one open end, a reference emitter disposed on the outer surface of the channel, and a high voltage electrode disposed within the channel. The high voltage electrode may present a high intensity electric field to the reference emitter through the dielectric channel in response to the provision of a variable-waveform signal dictated by conditions in the variable pressure environment. This results in the generation of a plasma region with electrically balanced charge carriers within the variable pressure environment due to barrier discharge occurring at the interface of the reference emitter and the outer surface of the dielectric channel. The disclosed apparatus are compatible with either radio frequency or micro-pulse voltage power supplies.
    • 公开了用于可变压力环境中的静电荷中和的方法和设备。 特别地,阻挡放电电离装置可以包括布置在可变压力环境内的中空电介质通道,并且可以具有至少一个开口端,布置在通道的外表面上的参考发射器以及布置在通道内的高压电极。 响应于由可变压力环境中的条件提供的可变波形信号的提供,高压电极可以通过介电通道向参考发射器呈现高强度电场。 由于在参考发射极和介电通道的外表面的界面处发生阻挡放电,这导致在可变压力环境内产生具有电平衡电荷载流子的等离子体区域。 所公开的装置与射频或微脉冲电压电源兼容。
    • 3. 发明授权
    • Installation for film deposition onto and/or modification of the surface of a moving substrate
    • 用于沉积到移动基底表面上和/或修改移动基底表面的安装
    • EP3054032B1
    • 2017-08-23
    • EP15154257.8
    • 2015-02-09
    • Coating Plasma IndustrieVetaphone A/S
    • Gat, EricTran, Minh DucEisby, Frank
    • C23C16/54C23C16/50C23C16/455B01J3/00H01J37/32C23C16/44
    • C23C16/545C23C16/4401C23C16/45504C23C16/45519C23C16/45578C23C16/458C23C16/50C23C16/52H01J37/3244H01J37/3277
    • This installation comprises a housing, a substrate support (20) received in said housing, diffusion means (42) for diffusing an inert gas, such as nitrogen, towards said substrate support and at least one head (30) defining an inner volume (V) opened opposite to said top, said head being provided with at least two electrodes (8, 8', 8") for creating an electric discharge and with injection means (7, 7', 7") for injecting a gaseous mixture towards said substrate. Said injection means comprise at least one injection tube (7, 7', 7") placed between two adjacent electrodes or between one electrode and a peripheral wall, said tube being provided with injection holes facing said substrate support, for injecting said gaseous mixture on said substrate, whereas diffusion means are provided inside said head, said injection tube being placed between said substrate support and said diffusion means so that, in use, said gaseous mixture is urged against said substrate by said inert gas.
    • 该装置包括壳体,容纳在所述壳体中的基板支撑件(20),用于朝向所述基板支撑件扩散惰性气体例如氮气的扩散装置(42),以及限定内部容积(V)的至少一个头部(30) )与所述顶部相对地打开,所述头部设置有用于产生放电的至少两个电极(8,8',8“)和用于向所述顶部喷射气体混合物的注入装置(7,7',7”) 基质。 所述注入装置包括放置在两个相邻电极之间或一个电极与周壁之间的至少一个注入管(7,7',7“),所述管设置有面向所述基底支撑件的注入孔,用于将所述气体混合物注入 所述衬底,而扩散装置设置在所述头部内部,所述注入管被放置在所述衬底支撑件和所述扩散装置之间,使得在使用中,所述气态混合物被所述惰性气体推向所述衬底。
    • 5. 发明公开
    • FILM FORMING DEVICE
    • VORRICHTUNG ZUR FILMFORMUNG
    • EP3006596A4
    • 2017-03-01
    • EP14804632
    • 2014-05-08
    • KK KOBE SEIKO SHO (KOBE STEEL LTD )
    • SEGAWA TOSHIKIOHBA NAOKIKUROKAWA YOSHINORI
    • C23C14/56C23C16/54H01J37/32H01J37/34H01L21/67
    • H01J37/3277C23C14/562H01J37/32513H01J37/32733H01J37/32807H01J37/3288H01J37/32899H01J37/3417H01J37/3447H01J2237/162H01J2237/20278H01J2237/332H01L21/67132
    • Provided is a deposition device which can secure work space without vertical overlap of the deposition unit and the units upstream and downstream thereof. This deposition device is provided with a deposition unit (16), and upstream and downstream units (14, 18) arranged to the left and right thereof. The deposition unit (16) is provided with: a deposition roller (70); multiple guide rollers (72); a main chamber (64) having a deposition roller housing unit (74) and, thereabove, a guide roller housing unit (76); first and second process chambers (66, 68) which house multiple deposition process devices (84, 86) to the left and right of the deposition roller housing unit (74); and process chamber support units (104) for supporting the first and second process chambers (66, 68) so as to allow the first and second process chambers (66, 68) to move between a regular position for deposition and a retracted position retracted to the left or right, and between the retracted position and an exposure position separated in the front/back direction.
    • 提供了一种沉积装置,其能够确保工作空间而不沉积单元与其上游和下游单元的垂直重叠。 该沉积装置设置有沉积单元(16)以及布置在其左侧和右侧的上游和下游单元(14,18)。 沉积单元(16)设置有:沉积辊(70); 多个导辊(72); 具有沉积辊容纳单元(74)的主室(64),以及上面的导辊容纳单元(76); 第一和第二处理室(66,68),其将多个沉积处理装置(84,86)容纳在沉积辊壳体单元(74)的左侧和右侧; 和用于支撑第一和第二处理室(66,68)的处理室支撑单元(104),以允许第一和第二处理室(66,68)在用于沉积的常规位置和被缩回到 左侧或右侧,以及在缩回位置与在前/后方向上分离的曝光位置之间。
    • 7. 发明公开
    • Installation for film deposition onto and/or modification of the surface of a moving substrate
    • 安装用于在和/或修改移动基板的表面成膜
    • EP3054032A1
    • 2016-08-10
    • EP15154257.8
    • 2015-02-09
    • Coating Plasma IndustrieVetaphone A/S
    • Gat, EricTran, Minh DucEisby, Frank
    • C23C16/54C23C16/50C23C16/455B01J3/00H01J37/32C23C16/44
    • C23C16/545C23C16/4401C23C16/45504C23C16/45519C23C16/45578C23C16/458C23C16/50C23C16/52H01J37/3244H01J37/3277
    • This installation comprises a housing, a substrate support (20) received in said housing, diffusion means (42) for diffusing an inert gas, such as nitrogen, towards said substrate support and at least one head (30) defining an inner volume (V) opened opposite to said top, said head being provided with at least two electrodes (8, 8', 8") for creating an electric discharge and with injection means (7, 7', 7") for injecting a gaseous mixture towards said substrate.
      Said injection means comprise at least one injection tube (7, 7', 7") placed between two adjacent electrodes or between one electrode and a peripheral wall, said tube being provided with injection holes facing said substrate support, for injecting said gaseous mixture on said substrate, whereas diffusion means are provided inside said head, said injection tube being placed between said substrate support and said diffusion means so that, in use, said gaseous mixture is urged against said substrate by said inert gas.
    • 这个装置包括一个外壳(20),在所述壳体内接收到的衬底支撑件,扩散装置(42),用于气体扩散惰性,:如氮,朝向所述衬底支撑件和至少一个头部(30)在内部容积定义(V )打开相对所述顶部,被用于向所述注射的气体混合物提供,所述头部具有至少两个电极(8,8”,8“),用于创建关于放电,并用喷射装置(7,7' ,7" ) 基板。 所述注射装置包括两个相邻电极之间或一个电极和一外周壁之间放置至少一个喷射管(7,7”,7“),所述管设置有面向所述基板支撑,用于喷射孔喷射所述气体混合物上 所述底物,而被所述头部内设置扩散装置,所述喷射管是所述之间放置的衬底支撑并扩散的所述装置使得在使用中,所述气体混合物通过所述惰性气体对所说基片施力。
    • 10. 发明公开
    • CARBON FILM FORMING APPARATUS
    • 器具,用于产生碳膜
    • EP2754730A1
    • 2014-07-16
    • EP12830845.9
    • 2012-08-31
    • Nanotec Co.
    • NAKAMORI HidekiHIRATSUKA MasanoriYUKIMURA Ken
    • C23C14/34C01B31/02C23C14/06
    • C23C14/345C01B32/05C23C14/0605C23C14/3485C23C14/3492C23C14/562H01J37/3277H01J37/3467H01J37/3473
    • An excellent and high-grade carbon film is formed on a surface of a material to be processed at a high speed.
      A film forming vacuum chamber includes: a substrate to which a predetermined voltage is applied by substrate voltage applying means in a vacuum chamber that can be depressurized to a predetermined degree of vacuum; and a plasma generating source that has at least one carbon raw material substrate that is arranged to face the substrate, forms plasma from an atmosphere for discharge generation introduced into the vacuum chamber based on adjustment electric power output to the carbon raw material substrate by a pulse power supply on the carbon raw material substrate, and discharges electricity together with a carbon raw material from the carbon raw material substrate toward the material to be processed that is held on the substrate, a carbon film is processed and formed on a surface of the material to be processed by a sputtering method, the pulse power supply and the substrate voltage applying means are connected to an oscillation apparatus for a gate signal by a mechanism that adjusts an initial voltage, and each of the pulse power supply and the substrate power supply has an adjustment circuit that controls each of a pulse width, delay timing from application of a voltage to a target to application of a substrate voltage, a frequency, and a voltage in a predetermined range.