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2. 发明公开

EP3413335A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR 有权转让
公开(公告)号：EP3413335A1
公开(公告)日：2018-12-12
申请号：EP16843279.7
申请日：2016-05-11
申请人： BOE Technology Group Co., Ltd. , South China University of Technology
发明人： YAN, Liangchen , YUAN, Guangcai , XU, Xiaoguang , WANG, Lei , PENG, Junbiao , LAN, Linfeng
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/7869 , C23C14/165 , C23C14/185 , C23C14/205 , C23C14/5853 , C25D11/022 , C25D11/04 , C25D11/26 , C25D11/34 , H01L21/0223 , H01L21/02244 , H01L21/02422 , H01L21/02565 , H01L21/02614 , H01L21/443 , H01L29/24 , H01L29/4908 , H01L29/517 , H01L29/66969 , H01L29/786 , H01L29/78603 , H01L29/78606 , H01L29/78693
摘要： A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers (20, 30) on a substrate (10) by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers (23, 32) by completely oxidizing or partially oxidizing the metal film layers (20, 30). The TFT includes a gate electrode layer (22) and a gate insulating layer (23) which are tightly integrated.

3. 发明公开

EP3368240A1 METALLIZING POLYMERS, CERAMICS AND COMPOSITES FOR ATTACHMENT STRUCTURES 有权
公开(公告)号：EP3368240A1
公开(公告)日：2018-09-05
申请号：EP16860703.4
申请日：2016-10-26
申请人： Hutchinson Technology Incorporated
发明人： DAVIS, Michael W. , RIEMER, Douglas P. , OLSEN, Clark T. , LAGERGREN, Steven R. , PESAVENTO, Paul V.
IPC分类号： B23K11/16 , B21C37/02 , B23B27/08
CPC分类号： B23K20/10 , B23K1/0008 , B23K1/19 , B23K20/023 , B23K20/233 , B23K2101/35 , B23K2103/08 , B23K2103/172 , B23K2103/42 , B23K2103/52 , C23C14/185 , C23C14/205 , C23C18/1641 , C23C18/1689 , C23C18/1851 , C23C18/2006 , C23C18/32 , C23C18/42 , C25D3/04 , C25D3/48 , C25D5/48 , C25D5/56 , C25D7/00
摘要： A method of manufacture includes forming a metallized tie layer on a surface of a non-metallic component, positioning the surface of the non-metallic component to mate with a metallic surface of a second component, and joining the metallized tie layer with the mated metallic surface of the second component using metal to metal joining techniques.

4. 发明公开

EP3362826A1 OPTICAL FILTER WITH SELECTIVE TRANSMITTANCE AND REFLECTANCE 有权
公开(公告)号：EP3362826A1
公开(公告)日：2018-08-22
申请号：EP16856208.0
申请日：2016-10-13
申请人： Vision Ease, LP
发明人： BROWN, Jeff , MARSHALL, Michael L. , BOULINEAU, Michael S.
IPC分类号： G02B1/10 , B32B17/10 , G02B1/04 , G02B5/22
CPC分类号： G02C7/10 , C23C14/0641 , C23C14/083 , C23C14/10 , C23C14/205 , C23C14/34 , G02B5/208 , G02B5/22 , G02B5/26 , G02B5/283 , G02B5/285 , G02C7/107
摘要： An optical filter providing selective transmittance of target wavelengths of light and tunable, differential front and back surface reflectance.

5. 发明授权

EP2807284B1 CHROMIUM-BASED REFLECTIVE COATING 有权转让
标题翻译：铬基反射涂层
公开(公告)号：EP2807284B1
公开(公告)日：2017-10-11
申请号：EP13740802.7
申请日：2013-01-24
申请人： SMR Patents S.à.r.l. , University Of South Australia
发明人： EVANS, Drew, Raymond , ZUBER, Kamil , HALL, Colin, James , FIELD, Simon, David
IPC分类号： C23C14/02 , C23C14/06 , C23C14/22 , C23C14/34 , C23C14/35 , C23C14/00 , C23C28/00 , C23C14/20 , C22C28/00 , B60Q1/26 , B60Q1/38 , F21S8/10 , G02B27/14 , C23C30/00
CPC分类号： B60Q1/2665 , B60Q1/38 , C22C28/00 , C23C14/0015 , C23C14/024 , C23C14/20 , C23C14/205 , C23C14/228 , C23C14/35 , C23C28/00 , C23C30/00 , F21S43/26 , G02B27/142 , G02B27/144 , Y10T428/12 , Y10T428/12569 , Y10T428/12847 , Y10T428/265
摘要： A chromium-based reflective coating for a polymeric substrate, wherein the coating has a thickness of 200 nm or less and is an alloy of chromium and a dopant material, the dopant material being selected from the hexagonally close-packed transition metals, the alloy having a crystal structure of a primary body-centered cubic phase in coexistence with a secondary omega hexagonally close-packed phase.

6. 发明授权

EP2883632B1 Metallic foam body with controlled grain size on its surface, process for its production and use thereof 有权转让
标题翻译：其表面上具有可控颗粒尺寸的金属泡沫体，其生产和使用方法
公开(公告)号：EP2883632B1
公开(公告)日：2017-07-05
申请号：EP13196540.2
申请日：2013-12-10
申请人： Alantum Europe GmbH
发明人： Poss, René, Dr. , Saberi, Shadi, Dr. , Deisel, Frank, Dr.
IPC分类号： B22F3/11 , B22F7/00 , B32B15/01 , C25D5/10 , C22C1/08 , C23C16/56 , C23C14/00 , C23C14/04 , C23C14/20 , C25D1/08
CPC分类号： C25D7/00 , B22F3/1137 , B22F7/002 , B32B15/018 , B32B15/043 , B32B15/046 , B32B15/20 , C22C1/08 , C23C14/0005 , C23C14/046 , C23C14/205 , C23C14/34 , C23C14/5846 , C23C14/5873 , C25D1/08 , C25D3/46 , C25D5/10 , C25D5/34

7. 发明公开

EP3156791A1 ENZYME ELECTRODE 审中-公开
标题翻译： ENZYMELEKTRODE
公开(公告)号：EP3156791A1
公开(公告)日：2017-04-19
申请号：EP16194045.7
申请日：2016-10-14
申请人： ARKRAY, Inc. , Ultizyme International Ltd.
发明人： KATSUKI, Koji , KANEDA, Hisashi , SHIMAZAKI, Junko
IPC分类号： G01N27/327 , C12Q1/00
CPC分类号： C12Q1/006 , C12Q1/001 , C12Q1/25 , C12Q1/32 , C23C14/0605 , C23C14/205 , C23C14/24 , C23C14/34 , C23C14/58 , C23C16/06 , C23C16/44 , C23C16/56 , C23C28/00 , G01N27/3271 , G01N27/3272
摘要： An enzyme electrode including an electrode, and a detection layer which contacts the electrode and contains a crosslinking agent, an electrically conductive macromolecule and an enzyme transferring and receiving electrons to and from the electrode and does not contain an electron transfer subunit.
摘要翻译：包括电极的酶电极和与电极接触并含有交联剂的检测层，导电性高分子和向电极转移电子并从电极接收电子并且不含电子转移子单元的酶。

8. 发明公开

EP3130881A1 INTEGRATED BARREL/BRIDGE SUBASSEMBLY FOR AN EXPLODING FOIL INITIATOR (EFI) 审中-公开
标题翻译： INTEGRIERTE BARREL-BRÜCKENBAUGRUPPEFÜREINENFOLIENZÜNDER（EFI）
公开(公告)号：EP3130881A1
公开(公告)日：2017-02-15
申请号：EP16183608.5
申请日：2016-08-10
申请人： Excelitas Technologies Corp.
发明人： FISHER, Steven , WARREN, Donald , SPARKMAN, John
IPC分类号： F42B3/12
CPC分类号： F42B3/12 , C23C14/205 , C23C14/34 , F42B3/125
摘要： An integrated barrel/bridge detonator subassembly includes a polyimide flyer layer (230), a conducting layer, and a barrel layer (210). The conducting layer has an electrically conducting material laminated to a first side of the flyer layer. The conducting layer consists of a single layer of an electrically conducting material. The electrically conducting material forms a first land (232) having a first connecting pad, a second land (234) having a second connecting pad disposed opposite the first land, and a bridge (236) disposed between and providing electrical conductivity between the first land and the second land. The barrel layer (210) is formed of an insulative material and laminated to a second side of the flyer layer (230) substantially opposite the first side. The barrel layer has an opening disposed substantially opposite the bridge.
摘要翻译：集成的枪管/桥式雷管子组件包括聚酰亚胺翼片层（230），导电层和镜筒层（210）。所述导电层具有层叠在所述传单层的第一侧上的导电材料。导电层由单层导电材料组成。所述导电材料形成具有第一连接焊盘的第一焊盘（232），具有与所述第一焊盘相对设置的第二连接焊盘的第二焊盘（234）和布置在所述第一焊盘之间并在所述第一焊盘之间提供导电性的桥和第二个土地。桶层（210）由绝缘材料形成并层叠到基本上与第一侧相对的翼片层（230）的第二侧。桶层具有基本上与桥相对设置的开口。

9. 发明公开

EP3004416A4 METHOD OF MANUFACTURING MULTI-LAYER THIN FILM, MEMBER INCLUDING THE SAME AND ELECTRONIC PRODUCT INCLUDING THE SAME 审中-公开
标题翻译：用于生产的多层薄膜该元素和电子产品，
公开(公告)号：EP3004416A4
公开(公告)日：2017-02-15
申请号：EP14804120
申请日：2014-05-09
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： CHO JIN HYUN , KIM JIN SUB , YOO HYONG JUN , LEE SEO JOON , JUNG MIN CHUL
IPC分类号： C23C14/35 , C23C14/02 , C23C14/06 , C23C14/20 , C23C28/00
CPC分类号： C23C14/0641 , C23C14/0015 , C23C14/022 , C23C14/205 , C23C14/35 , H05K5/0243 , Y10T428/31544 , Y10T428/31678
摘要： A method of manufacturing a multi-layer thin film is provided. The method includes modifying a surface of a plastic object by plasma treatment, depositing at least one hardness-enhancing layer on the plastic object, and depositing a color layer on the hardness-enhancing layer. The method may further include depositing a protective layer on the color layer.

10. 发明公开

EP3125306A1 ELECTRODE HAVING NANO MESH MULTI-LAYER STRUCTURE, USING SINGLE CRYSTAL COPPER, AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：与多层纳米权力结构与生产工艺EINKRISTALLKUPFER LEAD
公开(公告)号：EP3125306A1
公开(公告)日：2017-02-01
申请号：EP15770094.9
申请日：2015-01-09
申请人： Busan National University Industrial-University Co-operation Foundation
发明人： JEONG, Se-young , KIM, Ji-young , KIM, Won-kyung
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/18
CPC分类号： H01B5/14 , C23C14/086 , C23C14/205 , C23C14/34 , C30B23/08 , C30B29/02 , C30B33/10 , H01B1/02 , H01B1/08 , H01B13/0036 , H01L31/022466 , H01L51/0023 , H01L51/102 , H01L51/445 , H01L51/5212 , Y02E10/549
摘要： The present invention relates to an electrode having a multilayer nanomesh structure using single-crystalline copper and a method for manufacturing same, the electrode comprising: a substrate; a single-crystalline copper electrode layer formed on the substrate and having a hive-shaped pattern with a nano-sized line width; and a metal oxide layer formed on the single-crystalline copper electrode layer, this providing an electrode having excellent optical transmittance, low electrical sheet resistance, and excellent mechanical stability. The present invention is technically characterized by an electrode having a multilayer nanomesh structure using single-crystalline copper, the electrode comprising: a substrate; a single-crystalline copper electrode layer formed on the substrate and having a hive-shaped pattern with a nano-sized line width; and a metal oxide layer formed on the single-crystalline copper electrode layer.
摘要翻译：本发明涉及到在电极具有使用单晶铜及其制造，电极的方法，包括一个多层结构纳米网：一基片; 形成在基板和具有与纳米尺寸的线宽蜂巢形图案的单晶铜电极层; 和金属氧化物层形成的单晶铜电极层上，提供该对电极具有优异的光透射率，低片电阻，和优异的机械稳定性。使用单晶铜具有多层结构纳米基板在电极上的;:本发明在技术上由表征，所述电极包括形成在基板和具有与纳米尺寸的线宽蜂巢形图案的单晶铜电极层; 和金属氧化物层形成的单晶铜电极层上。

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