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1. 发明授权

EP3418423B1 METHOD FOR SMOOTHING SURFACE ROUGHNESS OF COMPONENTS 有权
公开(公告)号：EP3418423B1
公开(公告)日：2024-09-11
申请号：EP18179275.5
申请日：2018-06-22
IPC分类号： C23C16/12 , C23C16/455 , C23C10/28 , C23C10/60 , B22F10/28 , B22F10/62 , C23F1/20 , C23F1/44 , C23F4/00
CPC分类号： C23C10/28 , C23C10/60 , C23F1/20 , C23F1/44 , C23F4/00 , F05D2300/51620130101 , B22F2998/1020130101 , B22F2999/0020130101 , B33Y10/00 , F05B2250/6220130101 , Y02P10/25 , B22F10/28 , B22F10/62 , B22F10/50 , C23C16/45504 , C23C16/12

2. 发明授权

EP3020850B1 APPARATUS FOR PLASMA PROCESSING 有权
公开(公告)号：EP3020850B1
公开(公告)日：2018-08-29
申请号：EP15199821.8
申请日：2010-07-08
申请人： Aixtron SE
发明人： Savas, Stephen Edward , Galewski, Carl , Wiesnoski, Allan B. , Mantripragada, Sai , Joh, Sooyun
IPC分类号： C23F1/00 , H05H1/24 , B05D1/36 , C23C16/26 , C23C16/24 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/50 , C23C16/503 , H01J37/32 , H01L21/67 , C23C16/46 , C23C16/54 , C23C16/505
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Apparatus for plasma processing of a substrate comprising: a power supply; at least one plasma generating unit (PGU) including at least two electrodes, including at least a first electrode and a second electrode, wherein the first electrode is a powered electrode coupled to the power supply; a support for positioning and supporting the substrate with a first side of the substrate facing the PGU. The apparatus further comprising at least one gas supply system and at least one exhaust port configured to provide a gas flow through a first gap between a front surface of the first electrode and the substrate and through a second gap between a first side surface of the first electrode and a side surface of the second electrode. Each of the electrodes has a length and a width, wherein the length of each respective electrode is at least four times the width of the respective electrode. The first electrode and the second electrode are positioned relative to one another such that the second gap is less than the width of the first electrode. The first electrode is positioned such that the first gap is less than the width of the first electrode. The gas supply system comprises a first gas inlet configured to inject a first gas flow into the second gap. The power supply is configured to provide an alternating current (AC) to sustain a plasma in the first gap. It is essential that the support forms a third electrode for sustaining a plasma in the second gap that the gas supply system comprises a second gas inlet downstream of the first gas inlet configured to inject a second gas flow into the plasma.

3. 发明授权

EP3054032B1 Installation for film deposition onto and/or modification of the surface of a moving substrate 有权
标题翻译：用于沉积到移动基底表面上和/或修改移动基底表面的安装
公开(公告)号：EP3054032B1
公开(公告)日：2017-08-23
申请号：EP15154257.8
申请日：2015-02-09
申请人： Coating Plasma Industrie , Vetaphone A/S
发明人： Gat, Eric , Tran, Minh Duc , Eisby, Frank
IPC分类号： C23C16/54 , C23C16/50 , C23C16/455 , B01J3/00 , H01J37/32 , C23C16/44
CPC分类号： C23C16/545 , C23C16/4401 , C23C16/45504 , C23C16/45519 , C23C16/45578 , C23C16/458 , C23C16/50 , C23C16/52 , H01J37/3244 , H01J37/3277
摘要： This installation comprises a housing, a substrate support (20) received in said housing, diffusion means (42) for diffusing an inert gas, such as nitrogen, towards said substrate support and at least one head (30) defining an inner volume (V) opened opposite to said top, said head being provided with at least two electrodes (8, 8', 8") for creating an electric discharge and with injection means (7, 7', 7") for injecting a gaseous mixture towards said substrate. Said injection means comprise at least one injection tube (7, 7', 7") placed between two adjacent electrodes or between one electrode and a peripheral wall, said tube being provided with injection holes facing said substrate support, for injecting said gaseous mixture on said substrate, whereas diffusion means are provided inside said head, said injection tube being placed between said substrate support and said diffusion means so that, in use, said gaseous mixture is urged against said substrate by said inert gas.
摘要翻译：该装置包括壳体，容纳在所述壳体中的基板支撑件（20），用于朝向所述基板支撑件扩散惰性气体例如氮气的扩散装置（42），以及限定内部容积（V）的至少一个头部（30））与所述顶部相对地打开，所述头部设置有用于产生放电的至少两个电极（8,8'，8“）和用于向所述顶部喷射气体混合物的注入装置（7,7'，7”）基质。所述注入装置包括放置在两个相邻电极之间或一个电极与周壁之间的至少一个注入管（7,7'，7“），所述管设置有面向所述基底支撑件的注入孔，用于将所述气体混合物注入所述衬底，而扩散装置设置在所述头部内部，所述注入管被放置在所述衬底支撑件和所述扩散装置之间，使得在使用中，所述气态混合物被所述惰性气体推向所述衬底。

4. 发明公开

EP3054032A1 Installation for film deposition onto and/or modification of the surface of a moving substrate 有权
标题翻译：安装用于在和/或修改移动基板的表面成膜
公开(公告)号：EP3054032A1
公开(公告)日：2016-08-10
申请号：EP15154257.8
申请日：2015-02-09
申请人： Coating Plasma Industrie , Vetaphone A/S
发明人： Gat, Eric , Tran, Minh Duc , Eisby, Frank
IPC分类号： C23C16/54 , C23C16/50 , C23C16/455 , B01J3/00 , H01J37/32 , C23C16/44
CPC分类号： C23C16/545 , C23C16/4401 , C23C16/45504 , C23C16/45519 , C23C16/45578 , C23C16/458 , C23C16/50 , C23C16/52 , H01J37/3244 , H01J37/3277
摘要： This installation comprises a housing, a substrate support (20) received in said housing, diffusion means (42) for diffusing an inert gas, such as nitrogen, towards said substrate support and at least one head (30) defining an inner volume (V) opened opposite to said top, said head being provided with at least two electrodes (8, 8', 8") for creating an electric discharge and with injection means (7, 7', 7") for injecting a gaseous mixture towards said substrate.
Said injection means comprise at least one injection tube (7, 7', 7") placed between two adjacent electrodes or between one electrode and a peripheral wall, said tube being provided with injection holes facing said substrate support, for injecting said gaseous mixture on said substrate, whereas diffusion means are provided inside said head, said injection tube being placed between said substrate support and said diffusion means so that, in use, said gaseous mixture is urged against said substrate by said inert gas.
摘要翻译：这个装置包括一个外壳（20），在所述壳体内接收到的衬底支撑件，扩散装置（42），用于气体扩散惰性,:如氮，朝向所述衬底支撑件和至少一个头部（30）在内部容积定义（V ）打开相对所述顶部，被用于向所述注射的气体混合物提供，所述头部具有至少两个电极（8,8”，8“），用于创建关于放电，并用喷射装置（7，7' ，7" ）基板。所述注射装置包括两个相邻电极之间或一个电极和一外周壁之间放置至少一个喷射管（7,7”，7“），所述管设置有面向所述基板支撑，用于喷射孔喷射所述气体混合物上所述底物，而被所述头部内设置扩散装置，所述喷射管是所述之间放置的衬底支撑并扩散的所述装置使得在使用中，所述气体混合物通过所述惰性气体对所说基片施力。

6. 发明公开

EP2960358A1 Plasma source and surface treatment method 审中-公开
标题翻译： Plasmaquelle und Verfahren zurOberflächenbehandlung
公开(公告)号：EP2960358A1
公开(公告)日：2015-12-30
申请号：EP14173878.1
申请日：2014-06-25
申请人： Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO
发明人： CREYGHTON, Yves Lodewijk Maria , POODT, Paulus Willibrordus George , SIMOR, Marcel , ROOZEBOOM, Freddy
IPC分类号： C23C16/455 , C23C16/513 , H01J37/32 , H05H1/24 , H01L21/314
CPC分类号： C23C16/45514 , C23C16/45504 , C23C16/45536 , C23C16/4583 , C23C16/509 , C23C16/513 , H01J37/32348 , H01J37/32366 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32825 , H01J2237/332 , H05H1/2406 , H05H2001/2412
摘要： A plasma source has an outer surface (12), interrupted by an aperture (14) for delivering an atmospheric plasma from the outer surface. A transport mechanism (11) transports a substrate (10) in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface and the substrate. A first electrode (16a,b) of the plasma source has a first and second surface extending from an edge of the first electrode that runs along the aperture. The first surface defines the outer surface on a first side of the aperture. The distance between the first and second surface increase with distance from the edge. A second electrode (17) covered at least partly by a dielectric layer (18) is provided with the dielectric layer facing the second surface of the first electrode, substantially in parallel with the second surface of the first electrode, leaving a plasma initiation space on said first side of the aperture, between the surface of the dielectric layer and the second surface of the first electrode. A gas inlet (19a,b) is in communication with the plasma initiation space to provide a gas flow from the gas inlet to the aperture through the plasma initiation space. Atmospheric plasma initiated in the plasma initiation space flows to the aperture, from which it leaves to react with the surface of the substrate.
摘要翻译：等离子体源具有由用于从外表面输送大气等离子体的孔（14）中断的外表面（12）。输送机构（11）将与外表面平行的基板（10）紧密地输送到外表面，使得来自大气等离子体的气体可以在外表面和基板之间形成气体轴承。等离子体源的第一电极（16a，b）具有从沿着孔径延伸的第一电极的边缘延伸的第一和第二表面。第一表面限定孔的第一侧上的外表面。第一和第二表面之间的距离随着与边缘的距离而增加。至少部分地由电介质层（18）覆盖的第二电极（17）设置有电介质层，其面对第一电极的第二表面，基本上与第一电极的第二表面平行，留下等离子体引发空间所述孔的所述第一侧在介电层的表面和第一电极的第二表面之间。气体入口（19a，b）与等离子体引发空间连通，以提供通过等离子体引发空间从气体入口到孔的气流。在等离子体起始空间中引发的大气等离子体流入孔，离开该孔与基板的表面反应。

7. 发明授权

EP2044238B1 SYSTEM AND METHOD FOR DEPOSITION OF A MATERIAL ON A SUBSTRATE 有权
标题翻译：系统和方法材料在沉积到基底上
公开(公告)号：EP2044238B1
公开(公告)日：2015-12-02
申请号：EP07809148.5
申请日：2007-05-23
申请人： First Solar, Inc
发明人： MALTBY, Michael, G.
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54
CPC分类号： C23C16/45502 , C03B35/16 , C23C14/50 , C23C16/45504 , C23C16/45563 , C23C16/4586 , C23C16/54 , Y10T137/0318

8. 发明公开

EP2553142A1 SURFACE TREATMENT APPARATUS 审中-公开
标题翻译： OBERFLÄCHENBEHANDLUNGSGERÄT
公开(公告)号：EP2553142A1
公开(公告)日：2013-02-06
申请号：EP11715063.1
申请日：2011-03-17
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： JIANG, Yu Yan , INAGAKI, Masahide , NAKASHIMA, Kenji , MAKINO, Soichiro , HORINOUCHI, Nariaki , ITO, Takahiro
IPC分类号： C23C16/455
CPC分类号： C23C16/45508 , C23C16/45504 , C23C16/45587 , C23C16/45597
摘要： To reduce turbulence of a flow caused by a used fluid bumping against the inside wall of an outlet channel when a surface treatment material fluid flows along a substrate surface to be discharged in a surface treatment apparatus. A surface treatment apparatus (10) is an apparatus in which a disk-like sample-holding plate (14) is provided inside an enclosure (12) constituting a cylindrical circumferential wall. A cylindrical portion (22) provided in an upper portion of the enclosure (12) constitutes a material fluid supplying channel, and a channel provided on the lateral side of the sample-holding plate (14) in the enclosure 12 and shaped spreading as it goes farther from the cylindrical portion (22) constitutes a fluid discharge channel (24). The fluid discharge channel (24) employs a parabola curve or the like in which the position of the upper end of the outmost circumference of the sample-holding plate (14) is defined as a focus position and the position of the upper end of the outlet that is symmetrically opposite to the focus position is defined as a reference position.
摘要翻译：一种表面处理装置，其中盘形样品保持板设置在构成圆柱形周壁的外壳的内部。外壳的上部的圆筒形部分构成材料流体供给通道，并且设置在外壳中的样品保持板的侧面上的通道，并且随着与圆柱形部分更远的形状扩散，形成流体排出通道。流体排出通道采用抛物线曲线等，其中样品保持板的最外周的上端的位置被定义为聚焦位置，并且出口的上端的位置对称地相对于焦点位置被定义为参考位置。

9. 发明公开

EP2465972A2 Method and system for thin film deposition 有权
标题翻译： Verfahren und System zurDünnfilmablagerung
公开(公告)号：EP2465972A2
公开(公告)日：2012-06-20
申请号：EP11193595.3
申请日：2011-12-14
申请人： NCD Co., Ltd.
发明人： Shin, Woong Chul , Baek, Min , Choi, Kyu-Jeong
IPC分类号： C23C16/54 , C23C16/455
CPC分类号： C23C16/54 , C23C16/45504 , C23C16/45546
摘要： Disclosed herein is a thin film deposition system, which includes a process chamber configured to provide a laminar gas flow and virtually divided into several spaces when a reaction gas and a purge gas are consecutively supplied into the process chamber, so that atomic layer deposition can be performed with respect to a plurality of substrates while the virtually divided spaces are moved within the process chamber, thereby reducing a process tack time. The thin film deposition system includes cassettes in which a plurality of substrates is loaded such that the substrates are separated constant distances from each other and the distance between the respective substrates becomes a distance between laminar flows; a process chamber which receives the cassettes such that a distance between a cassette and an inner wall of the process chamber becomes the distance between laminar flows, and in which the substrates are subjected to atomic layer deposition; a gas supply unit disposed at one sidewall of the process chamber and supplying gas to all of the substrates placed in the cassettes in a direction horizontal to arrangement of the substrates such that a laminar flow of the gas is provided to leading ends of the substrates, to a space between substrates, and to a space between the substrate and the wall of the process chamber; and a gas exhaust unit disposed at an opposite side with respect to the gas supply unit within the process chamber and discharging the gas from the process chamber by suctioning the gas at rear sides of the substrates.
摘要翻译：本文公开了一种薄膜沉积系统，其包括处理室，其被配置为当将反应气体和吹扫气体连续地供应到处理室中时提供层流气流并且实际上分成几个空间，使得原子层沉积可以相对于多个基板执行，同时虚拟分割的空间在处理室内移动，从而减少处理粘合时间。薄膜沉积系统包括其中装载多个基板的盒，使得基板彼此间隔开恒定距离，并且各个基板之间的距离变成层流之间的距离; 处理室，其容纳盒，使得盒和处理室的内壁之间的距离成为层流之间的距离，并且其中基板经受原子层沉积; 气体供给单元，其设置在处理室的一个侧壁处，并且沿垂直于基板布置的方向向放置在盒中的所有基板供应气体，使得气体的层流被提供给基板的前端，到基板之间的空间，以及基板和处理室的壁之间的空间; 以及排气单元，其相对于处理室内的气体供给单元设置在相对侧，并且通过在基板的后侧抽吸气体而从处理室排出气体。

10. 发明公开

EP2451991A2 APPARATUS AND METHOD FOR PLASMA PROCESSING 有权转让
标题翻译：装置和方法用于等离子体处理
公开(公告)号：EP2451991A2
公开(公告)日：2012-05-16
申请号：EP10797882.7
申请日：2010-07-08
申请人： Plasmasi, Inc.
发明人： SAVAS, Stephen, Edward , GALEWSKI, Carl , WIESNOSKI, Allan, B. , MANTRIPRAGADA, Sai , JOH, Sooyun
IPC分类号： C23F1/00 , H05H1/24 , B05D1/36
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Apparatus for plasma processing of a substrate comprising: a power supply; at least one plasma generating unit (PGU) including at least two electrodes, including at least a first electrode and a second electrode, wherein the first electrode is a powered electrode coupled to the power supply; a support for positioning and supporting the substrate with a first side of the substrate facing the PGU. The apparatus further comprising at least one gas supply system and at least one exhaust port configured to provide a gas flow through a first gap between a front surface of the first electrode and the substrate and through a second gap between a first side surface of the first electrode and a side surface of the second electrode. Each of the electrodes has a length and a width, wherein the length of each respective electrode is at least four times the width of the respective electrode. The first electrode and the second electrode are positioned relative to one another such that the second gap is less than the width of the first electrode. The first electrode is positioned such that the first gap is less than the width of the first electrode. The gas supply system comprises a first gas inlet configured to inject a first gas flow into the second gap. The power supply is configured to provide an alternating current (AC) to sustain a plasma in the first gap. It is essential that the support forms a third electrode for sustaining a plasma in the second gap that the gas supply system comprises a second gas inlet downstream of the first gas inlet configured to inject a second gas flow into the plasma.

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