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1. 发明公开

EP2065915A1 DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： DIAMANTELEKTRONENQUELLE UND DEREN HERSTELLUNGSVERFAHREN
公开(公告)号：EP2065915A1
公开(公告)日：2009-06-03
申请号：EP07807459.8
申请日：2007-09-18
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： H01J9/02 , H01J1/304
CPC分类号： H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
摘要： A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source.
One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.
摘要翻译：一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点器件，以及金刚石电子源的制造方法。研磨柱状金刚石单晶10的一端，形成平坦的平坦面11，在平滑平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。

2. 发明公开

EP1212777A1 ION BEAM VACUUM SPUTTERING APPARATUS AND METHOD 有权
标题翻译： DEVICE AND METHOD FOR真空离子束溅射
公开(公告)号：EP1212777A1
公开(公告)日：2002-06-12
申请号：EP00962690.4
申请日：2000-09-18
申请人： NORDIKO LIMITED
发明人： DAVIS, Mervyn, Howard , PROUDFOOT, Gary , PEARSON, David, Ian, Charles
IPC分类号： H01J37/304 , H01J27/02 , H01J27/16 , H01J27/18
CPC分类号： H01J37/304 , H01J2237/3146
摘要： A vacuum sputtering apparatus (1) includes an ion gun (3) whose ion extraction system (5) includes an accelerator grid (22) connected to a d.c. voltage supply (21). The plasma in the ion gun (3) is generated by r.f. power delivered by an r.f. coil (6) and forms a beam of ions (8) which is projected towards a target (9) from which material is sputtered on to a substrate (12). Magnets (7) trap adjacent the wall of the plasma generation chamber (4) electrons released as a result of plasma formation. An r.f. power supply (32) supplies r.f. power to the r.f. coil (6). A control circuit includes components (23, 30; 23, 30, 38, 39, 40, 41) arranged to derive from the current flowing from the d.c. voltage supply (21) to the accelerator grid (22) a control signal for controlling the r.f power supply means (32). This control signal can be supplied to a computer (31) which carries out fast accelerator grid current/time integration or fast accelerator grid power/time integration, to determine the rate of deposition of sputtered material upon the substrate (12). Alternatively the control signal can be fed into the r.f. power supply means (32) for direct closed loop accelerator grid current or grid power control.

3. 发明公开

EP2065915A4 DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：金刚石电子源及其制造方法
公开(公告)号：EP2065915A4
公开(公告)日：2010-03-10
申请号：EP07807459
申请日：2007-09-18
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： UEDA AKIHIKO , YAMAMOTO YOSHIYUKI , NISHIBAYASHI YOSHIKI , IMAI TAKAHIRO
IPC分类号： H01J9/02 , H01J1/304 , H01J37/065 , H01J37/073
CPC分类号： H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175

4. 发明授权

EP1078111B1 SPUTTER DEPOSITION METHOD 有权
标题翻译：溅射方法
公开(公告)号：EP1078111B1
公开(公告)日：2005-12-28
申请号：EP99921695.5
申请日：1999-05-05
申请人： KAUFMAN & ROBINSON, INC. , COMMONWEALTH SCIENTIFIC CORPORATION
发明人： KAHN, James, R. , KAUFMAN, Harold, R. , ZHURIN, Viacheslav, V. , BALDWIN, David, A. , HYLTON, Todd, L.
IPC分类号： C23C14/46 , H01J37/34
CPC分类号： C23C14/46 , H01J37/3178 , H01J37/34 , H01J2237/3146
摘要： In accordance with one specific embodiment of the present invention, the apparatus (44) for sputter deposition within an evacuated volume (14) comprises a compact ion source (46) to generate ions (50, 52) into which an ionizable gas is introduced and from which ions leave with directed energies near to or below the sputtering threshold, a sputter target (54) near that source and located within the beam of ions leaving that source, a grounded shield (58) surrounding the sputter target and defining that portion of the target which is to be exposed to sputtering, and a power supply to bias the target so that ions are attracted to and sputter the target. Particles sputtered from the target are deposited on a deposition substrate (64) separate from both the ion source and the sputter target. In the case of an insulating target, the target is biased with a radiofrequency power supply and the bias has a mean negative value rather than a direct-current negative value. The rate and energy with which the ions arrive at the target together determine the rate with which that target is sputtered and the rate with which the thin film is deposited on the substrate. In using a compact gridless ion source, the high pressure required for generating ions is confined to the ion source and the gas load for pumping is reduced. For ion energies at or near the sputtering threshold, the sputtering from extraneous hardware is reduced or eliminated. In addition, the target biases can be low enough to minimize the damage due to energetic neutrals that result from the reflection of energetic ions striking the target.

5. 发明公开

EP1180795A3 Verfahren zum Herstellen einer ersten Elektrode und einer zweiten Elektrode, elektronisches Bauelement und elektronisches Speicherelement 有权
标题翻译：制备第一电极和第二电极，电子元件和电子存储元件的制造方法
公开(公告)号：EP1180795A3
公开(公告)日：2004-10-20
申请号：EP01118283.9
申请日：2001-07-30
申请人： Infineon Technologies AG
发明人： Sarstedt, Margit, Dr.
IPC分类号： H01L21/8242
CPC分类号： C23C14/228 , C23C14/221 , H01J2237/0812 , H01J2237/3146 , H01L21/28525 , H01L28/84 , Y10S977/773
摘要： Bei einem Verfahren zum Herstellen einer ersten Elektrode und einer zweiten Elektrode werden die erste Elektrode und die zweite Elektrode auf einem Elektrodenmaterial bereitgestellt. Mittels einer Cluster-Ionenquelle werden Cluster aus dem Elektrodenmaterial auf die erste Elektrode und/oder die zweite Elektrode aufgebracht.

6. 发明公开

EP2333807A3 Ion beam source 有权
标题翻译：离子束源
公开(公告)号：EP2333807A3
公开(公告)日：2015-11-18
申请号：EP10275127.8
申请日：2010-12-14
申请人： SPP Process Technology Systems UK Limited
发明人： Macneil, John , Bennet, Paul George
IPC分类号： H01J27/02 , H01J37/24
CPC分类号： H01J27/022 , H01J37/24 , H01J2237/0206 , H01J2237/08 , H01J2237/3146
摘要： This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pulsed power to the grid (13) to extract the ions.
摘要翻译：本发明涉及一种用于包括用于提取离子的栅格（13）和用于向栅格（13）提供脉冲功率以提取离子的电源的非导电目标（14）的离子束源（10）。

7. 发明公开

EP2919256A1 METHOD FOR INCREASED TARGET UTILIZATION IN ION BEAM DEPOSITION TOOLS 审中-公开
标题翻译：在离子束沉积工具中增加目标利用的方法
公开(公告)号：EP2919256A1
公开(公告)日：2015-09-16
申请号：EP15158629.4
申请日：2015-03-11
申请人： Roque, Mario B. , Castro, Victor L.
发明人： Roque, Mario B. , Castro, Victor L.
IPC分类号： H01J37/34 , C23C14/46
CPC分类号： H01J37/3002 , C23C14/3407 , C23C14/46 , H01J37/34 , H01J37/3417 , H01J37/3435 , H01J2237/3146
摘要： In a sputter deposition tool (100) of the type in which an ion source (101) generates a beam directed at a sputtering target, the sputtering target comprises an elongated exterior skirt (102) and a generally circular insert (103) positioned within the skirt, the surfaces of the skirt and insert being relatively coplanar and forming the surface of the target, with the elongated dimension of the skirt being axially oriented toward the ion source. The insert is rotated within the skirt to one of several positions during use of the target by the sputter deposition tool, to distribute wear of the target around the rotating insert and thus increase the utilization and useful life of the overall target assembly.
摘要翻译：在其中离子源（101）产生指向溅射靶的束的类型的溅射沉积工具（100）中，溅射靶包括细长的外部裙部（102）和定位在其内的大体圆形的插入物（103）裙部，裙部和插入件的表面相对共面并且形成靶的表面，裙部的细长尺寸轴向地朝向离子源定向。在通过溅射沉积工具使用靶材期间，插入件在裙部内旋转到多个位置中的一个位置，以分布靶材围绕旋转插入件的磨损，从而增加整个靶材组件的利用率和使用寿命。

8. 发明授权

EP2044609B1 ION DEPOSITION APPARATUS 有权转让
标题翻译： ION分离装置
公开(公告)号：EP2044609B1
公开(公告)日：2011-01-12
申请号：EP07766170.0
申请日：2007-07-06
申请人： SPP Process Technology Systems UK Limited
发明人： PROUDFOOT, Gary , GEORGE, Christopher, David , LIMA, Paulo, Edurado , GREEN, Gordon, Robert , TROWELL, Robert, Kenneth
IPC分类号： H01J37/305 , H01J37/317 , C23C14/46 , H01J37/08 , H01J27/04 , H01J27/16 , H01J37/20
CPC分类号： C23C14/46 , H01J27/18 , H01J37/20 , H01J37/3178 , H01J2237/024 , H01J2237/3146
摘要： This invention relates to a broad beam ion deposition apparatus (100) including an ion source (101), a target (102), a tillable substrate table (103) and an auxiliary port (104). The target (102) is in the form of a carousel which carries a number of targets and the ion source (101) is configured to produce a substantially rectangular section beam (105).

9. 发明公开

EP2333807A2 Ion beam source 有权
标题翻译： Ionstrahlenquelle
公开(公告)号：EP2333807A2
公开(公告)日：2011-06-15
申请号：EP10275127.8
申请日：2010-12-14
申请人： SPP Process Technology Systems UK Limited
发明人： Macneil, John , Bennet, Paul George
IPC分类号： H01J27/02
CPC分类号： H01J27/022 , H01J37/24 , H01J2237/0206 , H01J2237/08 , H01J2237/3146
摘要： This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pulsed power to the grid (13) to extract the ions.
摘要翻译：本发明涉及一种用于非导电靶（14）的离子束源（10），其包括用于提取离子的栅极（13）和用于向栅极（13）提供脉冲功率以提取离子的电源。

10. 发明授权

EP0962547B1 Improved ion beam sputtering 有权
标题翻译：改进的离子束溅射系统
公开(公告)号：EP0962547B1
公开(公告)日：2002-08-07
申请号：EP99303750.6
申请日：1999-05-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Pinarbasi, Mustafa
IPC分类号： C23C14/46 , C23C14/04 , G11B5/39 , G11B5/84
CPC分类号： B82Y25/00 , B82Y10/00 , C23C14/042 , C23C14/46 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01J37/3178 , H01J2237/3146

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